JPS6419711A - Manufacture of semiconductor single-crystal layer - Google Patents

Abstract

PURPOSE:To inhibit three-dimensional crystal growth in nucleation, and to conduct stratified crystal growth capable of being controlled at an atomic layer level by laminating a plurality of amorphous semiconductor thin-films, materials of which or the composition ratios of constitutional elements of which differ, onto a single crystal substrate and solid-phase recrystallizing the amorphous semiconductor thin-films through heat treatment. CONSTITUTION:GeSi/Si are laminated onto an Si substrate 10 to form amorphous layers (amorphous semiconductor thin-films) 111, 121. Each layer is laminated extending over thirty periods to shape amorphous layers 11 (111-11n). Said sample is thermally treated at 550 deg.C as it is held under an ultra-high vacuum. The amorphous layers 11, 12 are solid-phase recrystallized through the heat treatment to form single-crystal layers 21, 22. The single-crystal layers 21 (211-21n) consist of GeSi and the single-crystal layers 22 (221-22n) are composed of Si at that time. Accordingly, the single-crystal layers 21, 22 made up of GeSi and Si can be laminated and shaped onto the Si substrate 10 at atomic layer levels, thus allowing application to an optical device, a high-speed device, etc., utilizing superlattice structure.