AU2001247680A1 - A semitransparent optical detector including a polycrystalline layer and method of making - Google Patents

A semitransparent optical detector including a polycrystalline layer and method of making

Info

Publication number
AU2001247680A1
AU2001247680A1 AU2001247680A AU4768001A AU2001247680A1 AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1 AU 2001247680 A AU2001247680 A AU 2001247680A AU 4768001 A AU4768001 A AU 4768001A AU 2001247680 A1 AU2001247680 A1 AU 2001247680A1
Authority
AU
Australia
Prior art keywords
making
optical detector
polycrystalline layer
detector including
semitransparent optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247680A
Inventor
Adam M. Payne
Matthias Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aegis Semiconductor Inc
Original Assignee
Aegis Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aegis Semiconductor Inc filed Critical Aegis Semiconductor Inc
Publication of AU2001247680A1 publication Critical patent/AU2001247680A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
AU2001247680A 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making Abandoned AU2001247680A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US19244100P 2000-03-27 2000-03-27
US19244000P 2000-03-27 2000-03-27
US19244200P 2000-03-27 2000-03-27
US60/192,440 2000-03-27
US60/192,441 2000-03-27
US60/192,442 2000-03-27
PCT/US2001/009176 WO2001073857A2 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Publications (1)

Publication Number Publication Date
AU2001247680A1 true AU2001247680A1 (en) 2001-10-08

Family

ID=27393052

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247680A Abandoned AU2001247680A1 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Country Status (2)

Country Link
AU (1) AU2001247680A1 (en)
WO (1) WO2001073857A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10127017B4 (en) * 2001-06-01 2007-11-29 Forschungszentrum Jülich GmbH Photosensor for a transmitted light method for detecting the intensity profile of an optically standing wave
GB2383680A (en) * 2001-12-27 2003-07-02 Bookham Technology Plc A Light Sensor
NL1028253C2 (en) * 2005-02-11 2006-08-14 Uteke Maria Klaassens Sensor microchip comprises sensor components and on front side bump bond connections with a contact ring, e.g. a microbolometer or an electron bombarded semi-conductor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528082A (en) * 1983-09-26 1985-07-09 Exxon Research And Engineering Co. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
JPS60210826A (en) * 1984-04-03 1985-10-23 Mitsubishi Electric Corp Solar battery
JPS6194382A (en) * 1984-10-09 1986-05-13 ゼロツクス　コーポレーシヨン 2-terminal thin film photodetector
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
AUPM982294A0 (en) * 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
JP3754815B2 (en) * 1997-02-19 2006-03-15 キヤノン株式会社 Photovoltaic element, photoelectric conversion element, method for producing photovoltaic element, and method for producing photoelectric conversion element

Also Published As

Publication number Publication date
WO2001073857A9 (en) 2002-12-19
WO2001073857A2 (en) 2001-10-04
WO2001073857A3 (en) 2002-01-31

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