WO2001073857A3 - A semitransparent optical detector including a polycrystalline layer and method of making - Google Patents

A semitransparent optical detector including a polycrystalline layer and method of making Download PDF

Info

Publication number
WO2001073857A3
WO2001073857A3 PCT/US2001/009176 US0109176W WO0173857A3 WO 2001073857 A3 WO2001073857 A3 WO 2001073857A3 US 0109176 W US0109176 W US 0109176W WO 0173857 A3 WO0173857 A3 WO 0173857A3
Authority
WO
WIPO (PCT)
Prior art keywords
materials
various
silicon
tin oxide
photodetector
Prior art date
Application number
PCT/US2001/009176
Other languages
French (fr)
Other versions
WO2001073857A9 (en
WO2001073857A2 (en
Inventor
Adam M Payne
Matthias Wagner
Original Assignee
Aegis Semiconductor
Adam M Payne
Matthias Wagner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aegis Semiconductor, Adam M Payne, Matthias Wagner filed Critical Aegis Semiconductor
Priority to AU2001247680A priority Critical patent/AU2001247680A1/en
Publication of WO2001073857A2 publication Critical patent/WO2001073857A2/en
Publication of WO2001073857A3 publication Critical patent/WO2001073857A3/en
Publication of WO2001073857A9 publication Critical patent/WO2001073857A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

Materials suitable for fabricating optical monitors include amorphous, polycrystalline and microcrystalline materials. Semitransparent photodetector materials may be based on silicon or silicon and germanium alloys. Conductors for connecting to and contacting the photodetector may be made from various transparent oxides, including zinc oxide, tin oxide and indium tin oxide. Optical monitor structures based on PIN diodes take advantage of the materials disclosed. Various contact, lineout, substrate and interconnect structures optimize the monitors for integration with various light sources, including vertical cavity surface emitting laser (VCSEL) arrays. Complete integrated structures include a light source, optical monitor and either a package or waveguide into which light is directed.
PCT/US2001/009176 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making WO2001073857A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001247680A AU2001247680A1 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US19244100P 2000-03-27 2000-03-27
US19244200P 2000-03-27 2000-03-27
US19244000P 2000-03-27 2000-03-27
US60/192,440 2000-03-27
US60/192,441 2000-03-27
US60/192,442 2000-03-27

Publications (3)

Publication Number Publication Date
WO2001073857A2 WO2001073857A2 (en) 2001-10-04
WO2001073857A3 true WO2001073857A3 (en) 2002-01-31
WO2001073857A9 WO2001073857A9 (en) 2002-12-19

Family

ID=27393052

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/009176 WO2001073857A2 (en) 2000-03-27 2001-03-20 A semitransparent optical detector including a polycrystalline layer and method of making

Country Status (2)

Country Link
AU (1) AU2001247680A1 (en)
WO (1) WO2001073857A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10127017B4 (en) * 2001-06-01 2007-11-29 Forschungszentrum Jülich GmbH Photosensor for a transmitted light method for detecting the intensity profile of an optically standing wave
GB2383680A (en) * 2001-12-27 2003-07-02 Bookham Technology Plc A Light Sensor
NL1028253C2 (en) * 2005-02-11 2006-08-14 Uteke Maria Klaassens Sensor microchip comprises sensor components and on front side bump bond connections with a contact ring, e.g. a microbolometer or an electron bombarded semi-conductor

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139487A1 (en) * 1983-09-26 1985-05-02 Exxon Research And Engineering Company A method for sputtering a pin or nip amorphous silicon semi-conductor device having partially crystallised P and N-layers
JPS60210826A (en) * 1984-04-03 1985-10-23 Mitsubishi Electric Corp Solar battery
EP0178148A2 (en) * 1984-10-09 1986-04-16 Xerox Corporation Thin film photodetector
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
EP0860885A2 (en) * 1997-02-19 1998-08-26 Canon Kabushiki Kaisha Photovoltaic device, photoelectric transducer and method of manufacturing same
US5942050A (en) * 1994-12-02 1999-08-24 Pacific Solar Pty Ltd. Method of manufacturing a multilayer solar cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139487A1 (en) * 1983-09-26 1985-05-02 Exxon Research And Engineering Company A method for sputtering a pin or nip amorphous silicon semi-conductor device having partially crystallised P and N-layers
JPS60210826A (en) * 1984-04-03 1985-10-23 Mitsubishi Electric Corp Solar battery
EP0178148A2 (en) * 1984-10-09 1986-04-16 Xerox Corporation Thin film photodetector
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
US5942050A (en) * 1994-12-02 1999-08-24 Pacific Solar Pty Ltd. Method of manufacturing a multilayer solar cell
EP0860885A2 (en) * 1997-02-19 1998-08-26 Canon Kabushiki Kaisha Photovoltaic device, photoelectric transducer and method of manufacturing same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FERNANDES M ET AL: "VIS/NIR detector based on muc-Si:H p-i-n structures", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 364, no. 1-2, March 2000 (2000-03-01), pages 204 - 208, XP004195096, ISSN: 0040-6090 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 058 (E - 386) 7 March 1986 (1986-03-07) *

Also Published As

Publication number Publication date
WO2001073857A9 (en) 2002-12-19
AU2001247680A1 (en) 2001-10-08
WO2001073857A2 (en) 2001-10-04

Similar Documents

Publication Publication Date Title
WO2005072224A3 (en) Integrated photonic devices
EP1737047A4 (en) Photodiode and method for manufacturing same
WO2001073850A3 (en) A semitransparent optical detector including a silicon and germanium alloy and method of making
SE0000041D0 (en) Integrated wavelength monitor
EP1914813A3 (en) Semiconductor optoelectronic device
EP0898345A3 (en) Compound semiconductor light emitting device and method of fabricating the same
CA2374495A1 (en) Light-emitting module
WO2003096437A3 (en) Silicon and silicon-germanium light-emitting device, methods and systems
CN1982930A (en) Waveguide and optical cable module
WO2001071820A3 (en) A semitransparent optical detector with a transparent conductor and method of making
EP0401971A3 (en) Optical waveguide and method for its manufacture
WO2001073903A3 (en) A monitored optical component and method of making
WO2001073857A3 (en) A semitransparent optical detector including a polycrystalline layer and method of making
WO2001073856A3 (en) A semitransparent optical detector on a flexible substrate and method of making
WO2001073855A3 (en) A semitransparent optical detector including edge passivation
WO2001073770A3 (en) A small aperture semitransparent optical detector including edge passivation and method of making
WO2001073902A3 (en) An optical communication device including a semitransparent optical detector
AU2002225206A1 (en) Method of manufacturing optical devices and related improvements
WO2003102635A3 (en) Passive alignment connection for fiber optics incorporating vcsel emitters
WO2004073122A3 (en) Optical power monitoring for a semiconductor laser device
MATTHIAS A semitransparent optical detector including a polycrystalline layer and method of making
PAYNE et al. A semitransparent optical detector including a silicon and germanium alloy and method of making
MA et al. A monitored optical component and method of making
MA et al. A small aperture semitransparent optical detector including edge passivation and method of making
CN101292402B (en) Semiconductor laser light emitting device and method for manufacturing same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

AK Designated states

Kind code of ref document: C2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: C2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

COP Corrected version of pamphlet

Free format text: PAGES 1-41, DESCRIPTION, REPLACED BY NEW PAGES 1-41; PAGES 42-44, CLAIMS, REPLACED BY NEW PAGES 42-44; PAGES 1/17-17/17, DRAWINGS, REPLACED BY NEW PAGES 1/23-23/23; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP