AU2001283023A1 - A tunneling sensor or switch and a method of making same - Google Patents

A tunneling sensor or switch and a method of making same

Info

Publication number
AU2001283023A1
AU2001283023A1 AU2001283023A AU8302301A AU2001283023A1 AU 2001283023 A1 AU2001283023 A1 AU 2001283023A1 AU 2001283023 A AU2001283023 A AU 2001283023A AU 8302301 A AU8302301 A AU 8302301A AU 2001283023 A1 AU2001283023 A1 AU 2001283023A1
Authority
AU
Australia
Prior art keywords
switch
making same
tunneling sensor
tunneling
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283023A
Inventor
David T. Chang
Randall L. Kubena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001283023A1 publication Critical patent/AU2001283023A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/0036Switches making use of microelectromechanical systems [MEMS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
  • Gyroscopes (AREA)
AU2001283023A 2000-08-01 2001-07-27 A tunneling sensor or switch and a method of making same Abandoned AU2001283023A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/629,680 2000-08-01
US09/629,680 US6563184B1 (en) 2000-08-01 2000-08-01 Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
PCT/US2001/023802 WO2002011189A2 (en) 2000-08-01 2001-07-27 A tunneling sensor or switch and a method of making same

Publications (1)

Publication Number Publication Date
AU2001283023A1 true AU2001283023A1 (en) 2002-02-13

Family

ID=24524036

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283023A Abandoned AU2001283023A1 (en) 2000-08-01 2001-07-27 A tunneling sensor or switch and a method of making same

Country Status (6)

Country Link
US (2) US6563184B1 (en)
EP (1) EP1352414A2 (en)
JP (1) JP2004520177A (en)
AU (1) AU2001283023A1 (en)
TW (1) TW522440B (en)
WO (1) WO2002011189A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555404B1 (en) 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope
US6674141B1 (en) * 2000-08-01 2004-01-06 Hrl Laboratories, Llc Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
US6580138B1 (en) 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US7352266B2 (en) * 2004-02-20 2008-04-01 Wireless Mems, Inc. Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch
US8957355B1 (en) * 2012-01-26 2015-02-17 The Boeing Company Inertial measurement unit apparatus for use with guidance systems
US10145739B2 (en) 2014-04-03 2018-12-04 Oto Photonics Inc. Waveguide sheet, fabrication method thereof and spectrometer using the same
US10850976B2 (en) * 2018-09-21 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making ohmic contact on low doped bulk silicon for optical alignment

Family Cites Families (37)

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US5265470A (en) 1987-11-09 1993-11-30 California Institute Of Technology Tunnel effect measuring systems and particle detectors
US5210714A (en) 1988-10-14 1993-05-11 International Business Machines Corporation Distance-controlled tunneling transducer and direct access storage unit employing the transducer
US5015850A (en) 1989-06-20 1991-05-14 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated microscope assembly
ES2056580T3 (en) 1990-05-18 1994-10-01 British Aerospace INERTIAL SENSORS.
JP3069923B2 (en) 1991-06-17 2000-07-24 キヤノン株式会社 Cantilever probe, atomic force microscope, information recording / reproducing device
US5313835A (en) 1991-12-19 1994-05-24 Motorola, Inc. Integrated monolithic gyroscopes/accelerometers with logic circuits
DE4305033A1 (en) 1992-02-21 1993-10-28 Siemens Ag Micro-mechanical relay with hybrid drive - has electrostatic drive combined with piezoelectric drive for high force operation and optimum response
JP3152005B2 (en) * 1993-03-17 2001-04-03 株式会社村田製作所 Manufacturing method of semiconductor acceleration sensor
EP0619495B1 (en) 1993-04-05 1997-05-21 Siemens Aktiengesellschaft Process for manufacturing tunnel effect sensors
US5354985A (en) 1993-06-03 1994-10-11 Stanford University Near field scanning optical and force microscope including cantilever and optical waveguide
US5475318A (en) 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US5729074A (en) * 1994-03-24 1998-03-17 Sumitomo Electric Industries, Ltd. Micro mechanical component and production process thereof
US6075585A (en) 1994-04-12 2000-06-13 The Board Of Trustees Of The Leland Stanford, Jr. University Vibrating probe for a scanning probe microscope
US5666190A (en) 1994-04-12 1997-09-09 The Board Of Trustees Of The Leland Stanford, Jr. University Method of performing lithography using cantilever array
US5596194A (en) 1994-08-19 1997-01-21 Hughes Aircraft Company Single-wafer tunneling sensor and low-cost IC manufacturing method
US5646348A (en) 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
JP3182301B2 (en) 1994-11-07 2001-07-03 キヤノン株式会社 Microstructure and method for forming the same
US5883387A (en) 1994-11-15 1999-03-16 Olympus Optical Co., Ltd. SPM cantilever and a method for manufacturing the same
JP2897671B2 (en) 1995-01-25 1999-05-31 日本電気株式会社 Field emission cold cathode
US5659195A (en) 1995-06-08 1997-08-19 The Regents Of The University Of California CMOS integrated microsensor with a precision measurement circuit
GB9524241D0 (en) 1995-11-28 1996-01-31 Smiths Industries Plc Rate sensors
US5992233A (en) 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
US5894090A (en) 1996-05-31 1999-04-13 California Institute Of Technology Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same
US5747804A (en) 1996-09-13 1998-05-05 Raytheon Company Method and apparatus for sensing infrared radiation utilizing a micro-electro-mechanical sensor
JPH10178183A (en) * 1996-12-17 1998-06-30 Mitsubishi Materials Corp Semiconductor inertial sensor and manufacture thereof
JP3639684B2 (en) 1997-01-13 2005-04-20 キヤノン株式会社 Evanescent wave detection microprobe and method for manufacturing the same, probe including the microprobe and method for manufacturing the same, evanescent wave detection device including the microprobe, near-field scanning optical microscope, and information reproducing device
JP3493974B2 (en) * 1997-10-01 2004-02-03 オムロン株式会社 Electrostatic micro relay
US5929497A (en) 1998-06-11 1999-07-27 Delco Electronics Corporation Batch processed multi-lead vacuum packaging for integrated sensors and circuits
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
US6126311A (en) * 1998-11-02 2000-10-03 Claud S. Gordon Company Dew point sensor using mems
US6091125A (en) 1998-12-02 2000-07-18 Northeastern University Micromechanical electronic device
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6174820B1 (en) 1999-02-16 2001-01-16 Sandia Corporation Use of silicon oxynitride as a sacrificial material for microelectromechanical devices
US6337027B1 (en) 1999-09-30 2002-01-08 Rockwell Science Center, Llc Microelectromechanical device manufacturing process
US6630367B1 (en) * 2000-08-01 2003-10-07 Hrl Laboratories, Llc Single crystal dual wafer, tunneling sensor and a method of making same
US6580138B1 (en) * 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US6555404B1 (en) * 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope

Also Published As

Publication number Publication date
TW522440B (en) 2003-03-01
EP1352414A2 (en) 2003-10-15
US20030151104A1 (en) 2003-08-14
WO2002011189A2 (en) 2002-02-07
US6951768B2 (en) 2005-10-04
US6563184B1 (en) 2003-05-13
JP2004520177A (en) 2004-07-08
WO2002011189A3 (en) 2003-08-14

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