AU2001279107A1 - A tunneling sensor or switch and a method of making same - Google Patents

A tunneling sensor or switch and a method of making same

Info

Publication number
AU2001279107A1
AU2001279107A1 AU2001279107A AU7910701A AU2001279107A1 AU 2001279107 A1 AU2001279107 A1 AU 2001279107A1 AU 2001279107 A AU2001279107 A AU 2001279107A AU 7910701 A AU7910701 A AU 7910701A AU 2001279107 A1 AU2001279107 A1 AU 2001279107A1
Authority
AU
Australia
Prior art keywords
switch
making same
tunneling sensor
tunneling
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279107A
Inventor
David T. Chang
Randall L. Kubena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001279107A1 publication Critical patent/AU2001279107A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
AU2001279107A 2000-08-01 2001-07-30 A tunneling sensor or switch and a method of making same Abandoned AU2001279107A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/629,682 US6580138B1 (en) 2000-08-01 2000-08-01 Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US09629682 2000-08-01
PCT/US2001/023983 WO2002010063A2 (en) 2000-08-01 2001-07-30 A tunneling sensor or switch and a method of making same

Publications (1)

Publication Number Publication Date
AU2001279107A1 true AU2001279107A1 (en) 2002-02-13

Family

ID=24524043

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279107A Abandoned AU2001279107A1 (en) 2000-08-01 2001-07-30 A tunneling sensor or switch and a method of making same

Country Status (6)

Country Link
US (2) US6580138B1 (en)
EP (1) EP1305257A2 (en)
JP (1) JP2004520943A (en)
AU (1) AU2001279107A1 (en)
TW (1) TW511125B (en)
WO (1) WO2002010063A2 (en)

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US6555404B1 (en) * 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope
US6674141B1 (en) * 2000-08-01 2004-01-06 Hrl Laboratories, Llc Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
TWI224578B (en) * 2001-01-18 2004-12-01 Ibm Fabrication of silicon micro mechanical structures
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
EP1682444A2 (en) * 2003-10-31 2006-07-26 Koninklijke Philips Electronics N.V. A method of manufacturing an electronic device and electronic device
US20060261436A1 (en) * 2005-05-19 2006-11-23 Freescale Semiconductor, Inc. Electronic device including a trench field isolation region and a process for forming the same
US7233048B2 (en) * 2005-08-26 2007-06-19 Innovative Micro Technology MEMS device trench plating process and apparatus for through hole vias
US8736081B2 (en) 2005-08-26 2014-05-27 Innovative Micro Technology Wafer level hermetic bond using metal alloy with keeper layer
US7582969B2 (en) * 2005-08-26 2009-09-01 Innovative Micro Technology Hermetic interconnect structure and method of manufacture
US7528691B2 (en) * 2005-08-26 2009-05-05 Innovative Micro Technology Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture
US7960208B2 (en) * 2005-08-26 2011-06-14 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
US20070048887A1 (en) * 2005-08-26 2007-03-01 Innovative Micro Technology Wafer level hermetic bond using metal alloy
US7569926B2 (en) * 2005-08-26 2009-08-04 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
US7491622B2 (en) * 2006-04-24 2009-02-17 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer formed using an inductively coupled plasma
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
US20070249127A1 (en) * 2006-04-24 2007-10-25 Freescale Semiconductor, Inc. Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
US8957355B1 (en) * 2012-01-26 2015-02-17 The Boeing Company Inertial measurement unit apparatus for use with guidance systems
US9162878B2 (en) 2012-08-30 2015-10-20 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature and wetting layer
US9038269B2 (en) * 2013-04-02 2015-05-26 Xerox Corporation Printhead with nanotips for nanoscale printing and manufacturing
US20140301121A1 (en) * 2013-04-05 2014-10-09 Anam Nanotechnology, Inc. Tunneling Electric Contacts And Related Methods, Systems And Applications
CN106415222B (en) 2014-04-03 2018-06-08 台湾超微光学股份有限公司 Spectrometer, spectrometer waveguide piece manufacturing method and its structure
WO2018050965A1 (en) * 2016-09-14 2018-03-22 Aalto University Foundation Sr An accelerometer device and method for manufacturing the accelerometer device
US10466422B1 (en) * 2018-05-16 2019-11-05 Mellanox Technologies, Ltd. FTIR/TIR optical switch using a moving waveguide
WO2020148557A1 (en) 2019-01-17 2020-07-23 Mellanox Technologies Ltd. Adiabatic optical switch using a waveguide on a mems cantilever
FR3112534B1 (en) * 2020-07-16 2022-12-16 Commissariat Energie Atomique Nanometric electromechanical actuator and its method of manufacture

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US6630367B1 (en) * 2000-08-01 2003-10-07 Hrl Laboratories, Llc Single crystal dual wafer, tunneling sensor and a method of making same
US6563184B1 (en) 2000-08-01 2003-05-13 Hrl Laboratories, Llc Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
US6555404B1 (en) 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope

Also Published As

Publication number Publication date
US6580138B1 (en) 2003-06-17
US6982185B2 (en) 2006-01-03
TW511125B (en) 2002-11-21
US20030141562A1 (en) 2003-07-31
WO2002010063A2 (en) 2002-02-07
EP1305257A2 (en) 2003-05-02
WO2002010063A3 (en) 2002-05-02
JP2004520943A (en) 2004-07-15

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