JP4238385B2 - 化合物半導体素子およびその製造方法 - Google Patents

化合物半導体素子およびその製造方法 Download PDF

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Publication number
JP4238385B2
JP4238385B2 JP22327998A JP22327998A JP4238385B2 JP 4238385 B2 JP4238385 B2 JP 4238385B2 JP 22327998 A JP22327998 A JP 22327998A JP 22327998 A JP22327998 A JP 22327998A JP 4238385 B2 JP4238385 B2 JP 4238385B2
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Japan
Prior art keywords
layer
crystal
buffer layer
hexagonal
boron phosphide
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Expired - Fee Related
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JP22327998A
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English (en)
Japanese (ja)
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JP2000058451A (ja
JP2000058451A5 (enExample
Inventor
隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP22327998A priority Critical patent/JP4238385B2/ja
Publication of JP2000058451A publication Critical patent/JP2000058451A/ja
Publication of JP2000058451A5 publication Critical patent/JP2000058451A5/ja
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Publication of JP4238385B2 publication Critical patent/JP4238385B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
JP22327998A 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法 Expired - Fee Related JP4238385B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22327998A JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22327998A JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2000058451A JP2000058451A (ja) 2000-02-25
JP2000058451A5 JP2000058451A5 (enExample) 2005-08-04
JP4238385B2 true JP4238385B2 (ja) 2009-03-18

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Family Applications (1)

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JP22327998A Expired - Fee Related JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

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JP (1) JP4238385B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984851B2 (en) 2000-06-21 2006-01-10 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode
AU2001279163A1 (en) * 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
JP2002270896A (ja) * 2001-03-14 2002-09-20 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子およびその製造方法
KR100583243B1 (ko) 2001-05-28 2006-05-25 쇼와 덴코 가부시키가이샤 반도체 소자, 반도체층 및 그 제조방법
DE60224681T2 (de) 2001-08-20 2009-01-08 Showa Denko K.K. Mehrfarben-lichtemissionslampe und lichtquelle
JP4876359B2 (ja) * 2001-09-10 2012-02-15 昭和電工株式会社 化合物半導体素子、その製造方法、発光素子およびトランジスタ
US6831293B2 (en) * 2002-03-19 2004-12-14 Showa Denko Kabushiki Kaisha P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
US7508010B2 (en) * 2002-12-02 2009-03-24 Showa Denko K.K. Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
WO2004070846A1 (en) * 2003-02-10 2004-08-19 Showa Denko K. K. Semiconductor device, production method thereof and light-emitting device

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Publication number Publication date
JP2000058451A (ja) 2000-02-25

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