JP2003282450A5 - - Google Patents

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Publication number
JP2003282450A5
JP2003282450A5 JP2002079865A JP2002079865A JP2003282450A5 JP 2003282450 A5 JP2003282450 A5 JP 2003282450A5 JP 2002079865 A JP2002079865 A JP 2002079865A JP 2002079865 A JP2002079865 A JP 2002079865A JP 2003282450 A5 JP2003282450 A5 JP 2003282450A5
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JP
Japan
Prior art keywords
semiconductor layer
boron
based semiconductor
boron phosphide
phosphorus
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JP2002079865A
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English (en)
Japanese (ja)
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JP3700664B2 (ja
JP2003282450A (ja
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Priority to JP2002079865A priority Critical patent/JP3700664B2/ja
Priority claimed from JP2002079865A external-priority patent/JP3700664B2/ja
Publication of JP2003282450A publication Critical patent/JP2003282450A/ja
Publication of JP2003282450A5 publication Critical patent/JP2003282450A5/ja
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Publication of JP3700664B2 publication Critical patent/JP3700664B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2002079865A 2002-03-22 2002-03-22 リン化硼素系半導体層、その製造方法、半導体素子 Expired - Fee Related JP3700664B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002079865A JP3700664B2 (ja) 2002-03-22 2002-03-22 リン化硼素系半導体層、その製造方法、半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002079865A JP3700664B2 (ja) 2002-03-22 2002-03-22 リン化硼素系半導体層、その製造方法、半導体素子

Publications (3)

Publication Number Publication Date
JP2003282450A JP2003282450A (ja) 2003-10-03
JP2003282450A5 true JP2003282450A5 (enExample) 2005-05-19
JP3700664B2 JP3700664B2 (ja) 2005-09-28

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ID=29229130

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Application Number Title Priority Date Filing Date
JP2002079865A Expired - Fee Related JP3700664B2 (ja) 2002-03-22 2002-03-22 リン化硼素系半導体層、その製造方法、半導体素子

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JP (1) JP3700664B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352079A (ja) * 2005-03-22 2006-12-28 Sumitomo Chemical Co Ltd 自立基板、その製造方法及び半導体発光素子
DE112006000654T5 (de) * 2005-03-22 2008-04-03 Sumitomo Chemical Co., Ltd. Freitragendes Substrat, Verfahren zur Herstellung desselben und Halbleiterleuchtvorrichtung
CN100472718C (zh) * 2005-03-22 2009-03-25 住友化学株式会社 自支撑衬底、其制造方法及半导体发光元件
KR101053111B1 (ko) * 2011-02-28 2011-08-01 박건 실리콘 기판을 이용한 질화물계 발광소자 및 그 제조 방법
JP6008661B2 (ja) 2012-08-29 2016-10-19 日東光器株式会社 ＧａＮ系結晶及び半導体素子の製造方法

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