CN107039285A - 一种二维材料横向异质结、制备及其应用 - Google Patents
一种二维材料横向异质结、制备及其应用 Download PDFInfo
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- CN107039285A CN107039285A CN201710223432.2A CN201710223432A CN107039285A CN 107039285 A CN107039285 A CN 107039285A CN 201710223432 A CN201710223432 A CN 201710223432A CN 107039285 A CN107039285 A CN 107039285A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
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Abstract
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107910249A (zh) * | 2017-11-15 | 2018-04-13 | 苏州大学 | 制备二维面内异质结的方法 |
CN108374199A (zh) * | 2018-03-26 | 2018-08-07 | 电子科技大学 | 一种多孔GeS单晶纳米片及其制备方法 |
CN108441963A (zh) * | 2018-03-16 | 2018-08-24 | 湖南大学 | 一种碲化铂二维材料、制备及其电学器件中的应用 |
CN108486656A (zh) * | 2018-03-23 | 2018-09-04 | 湖南大学 | 一种碲化铌二维材料及其合成和应用 |
CN108707875A (zh) * | 2018-05-30 | 2018-10-26 | 厦门大学 | 一种管式cvd炉用接头、二维材料及其生长装置和方法 |
WO2019184747A1 (zh) * | 2018-03-26 | 2019-10-03 | 湖南大学 | 一种双气流生长二维材料反应室设备 |
CN110416065A (zh) * | 2019-07-29 | 2019-11-05 | 湖南大学 | 二硫化钼/二硒化钨垂直异质结的制备方法 |
CN110473925A (zh) * | 2019-07-09 | 2019-11-19 | 广东工业大学 | 一种二维硫化钼/硫化铟横向异质结及其制备方法和应用 |
CN110808281A (zh) * | 2019-11-07 | 2020-02-18 | 北京工业大学 | 一种单层MoS2-WS2横向异质结的制备方法 |
CN111146079A (zh) * | 2019-12-18 | 2020-05-12 | 湖南大学 | 一种二维金属-半导体范德华异质结阵列的合成及其应用 |
CN112359421A (zh) * | 2021-01-12 | 2021-02-12 | 中国人民解放军国防科技大学 | 一种反向气流法制备层状铋氧硒半导体薄膜的方法 |
CN112420861A (zh) * | 2020-11-18 | 2021-02-26 | 长春理工大学 | 二维材料异质结结构及其制备方法和应用、光电器件 |
CN113299779A (zh) * | 2021-05-26 | 2021-08-24 | 哈尔滨工业大学 | 一种二硫化钼/二硫化钨红外双色探测器及其制备方法 |
CN114231287A (zh) * | 2021-12-31 | 2022-03-25 | 湖南大学 | 一种WSe2-VOCl垂直异质结纳米材料及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103194729A (zh) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | 金属硫属化物薄膜的制备方法 |
CN105737253A (zh) * | 2016-03-15 | 2016-07-06 | 朱杰 | 散热器的气流调节装置 |
-
2017
- 2017-04-06 CN CN201710223432.2A patent/CN107039285B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103194729A (zh) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | 金属硫属化物薄膜的制备方法 |
CN105737253A (zh) * | 2016-03-15 | 2016-07-06 | 朱杰 | 散热器的气流调节装置 |
Non-Patent Citations (1)
Title |
---|
RUOQI AI ET AL.: "Growth of Single-Crystalline Cadmium Iodide Nanoplates, CdI2/MoS2 (WS2, WSe2) van der Waals Heterostructures, and Patterned Arrays", 《ACS NANO》 * |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107910249B (zh) * | 2017-11-15 | 2019-07-05 | 苏州大学 | 制备二维面内异质结的方法 |
CN107910249A (zh) * | 2017-11-15 | 2018-04-13 | 苏州大学 | 制备二维面内异质结的方法 |
CN108441963A (zh) * | 2018-03-16 | 2018-08-24 | 湖南大学 | 一种碲化铂二维材料、制备及其电学器件中的应用 |
CN108486656A (zh) * | 2018-03-23 | 2018-09-04 | 湖南大学 | 一种碲化铌二维材料及其合成和应用 |
CN108374199B (zh) * | 2018-03-26 | 2020-11-17 | 电子科技大学 | 一种多孔GeS单晶纳米片及其制备方法 |
CN108374199A (zh) * | 2018-03-26 | 2018-08-07 | 电子科技大学 | 一种多孔GeS单晶纳米片及其制备方法 |
WO2019184747A1 (zh) * | 2018-03-26 | 2019-10-03 | 湖南大学 | 一种双气流生长二维材料反应室设备 |
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