JP4142941B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4142941B2
JP4142941B2 JP2002355728A JP2002355728A JP4142941B2 JP 4142941 B2 JP4142941 B2 JP 4142941B2 JP 2002355728 A JP2002355728 A JP 2002355728A JP 2002355728 A JP2002355728 A JP 2002355728A JP 4142941 B2 JP4142941 B2 JP 4142941B2
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JP
Japan
Prior art keywords
film
insulating film
forming
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2002355728A
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English (en)
Japanese (ja)
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JP2004193162A5 (enExample
JP2004193162A (ja
Inventor
秀史 宮島
和幸 東
敬次 藤田
利昭 長谷川
清隆 田渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Sony Corp
Original Assignee
Toshiba Corp
Sony Corp
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Filing date
Publication date
Application filed by Toshiba Corp, Sony Corp filed Critical Toshiba Corp
Priority to JP2002355728A priority Critical patent/JP4142941B2/ja
Priority to US10/726,678 priority patent/US7129175B2/en
Priority to TW092134359A priority patent/TWI232484B/zh
Publication of JP2004193162A publication Critical patent/JP2004193162A/ja
Publication of JP2004193162A5 publication Critical patent/JP2004193162A5/ja
Application granted granted Critical
Publication of JP4142941B2 publication Critical patent/JP4142941B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H10P14/6512—
    • H10P14/6509—
    • H10P14/662—
    • H10P14/6905—
    • H10P50/73—
    • H10P95/00—
    • H10W20/071—
    • H10W20/084—
    • H10W20/095—
    • H10W20/096—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6922—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2002355728A 2002-12-06 2002-12-06 半導体装置の製造方法 Expired - Lifetime JP4142941B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002355728A JP4142941B2 (ja) 2002-12-06 2002-12-06 半導体装置の製造方法
US10/726,678 US7129175B2 (en) 2002-12-06 2003-12-04 Method of manufacturing semiconductor device
TW092134359A TWI232484B (en) 2002-12-06 2003-12-05 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002355728A JP4142941B2 (ja) 2002-12-06 2002-12-06 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004193162A JP2004193162A (ja) 2004-07-08
JP2004193162A5 JP2004193162A5 (enExample) 2006-01-19
JP4142941B2 true JP4142941B2 (ja) 2008-09-03

Family

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Family Applications (1)

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JP2002355728A Expired - Lifetime JP4142941B2 (ja) 2002-12-06 2002-12-06 半導体装置の製造方法

Country Status (3)

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US (1) US7129175B2 (enExample)
JP (1) JP4142941B2 (enExample)
TW (1) TWI232484B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4720266B2 (ja) * 2005-04-08 2011-07-13 東京エレクトロン株式会社 成膜方法、成膜装置及びコンピュータプログラム
JP4701017B2 (ja) * 2005-06-21 2011-06-15 パナソニック株式会社 半導体装置の製造方法及び半導体装置
JP2007220998A (ja) * 2006-02-17 2007-08-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US8511281B2 (en) * 2009-07-10 2013-08-20 Tula Technology, Inc. Skip fire engine control
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
CN102687252A (zh) 2009-12-30 2012-09-19 应用材料公司 以可变的氮/氢比所制造的自由基来生长介电薄膜的方法
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
SG182336A1 (en) 2010-01-06 2012-08-30 Applied Materials Inc Flowable dielectric using oxide liner
WO2011109148A2 (en) 2010-03-05 2011-09-09 Applied Materials, Inc. Conformal layers by radical-component cvd
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) * 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
JP2018147976A (ja) * 2017-03-03 2018-09-20 キヤノン株式会社 固体撮像装置及びその製造方法
US10242866B2 (en) 2017-03-08 2019-03-26 Lam Research Corporation Selective deposition of silicon nitride on silicon oxide using catalytic control
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10460930B2 (en) * 2017-11-22 2019-10-29 Lam Research Corporation Selective growth of SiO2 on dielectric surfaces in the presence of copper
CN112005343B (zh) 2018-03-02 2025-05-06 朗姆研究公司 使用水解的选择性沉积
JP6946374B2 (ja) 2019-06-20 2021-10-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747119A (en) * 1993-02-05 1998-05-05 Kabushiki Kaisha Toshiba Vapor deposition method and apparatus
US6306746B1 (en) * 1999-12-30 2001-10-23 Koninklijke Philips Electronics Backend process for fuse link opening
CN1524291A (zh) * 2001-01-03 2004-08-25 金属离子扩散阻挡层

Also Published As

Publication number Publication date
TWI232484B (en) 2005-05-11
US20040166680A1 (en) 2004-08-26
TW200425226A (en) 2004-11-16
JP2004193162A (ja) 2004-07-08
US7129175B2 (en) 2006-10-31

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