JP4242648B2 - 金属イオン拡散バリア層 - Google Patents
金属イオン拡散バリア層 Download PDFInfo
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- JP4242648B2 JP4242648B2 JP2002555477A JP2002555477A JP4242648B2 JP 4242648 B2 JP4242648 B2 JP 4242648B2 JP 2002555477 A JP2002555477 A JP 2002555477A JP 2002555477 A JP2002555477 A JP 2002555477A JP 4242648 B2 JP4242648 B2 JP 4242648B2
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Description
1は、回路アッセンブリである。これは当業者に知られた如何なる回路アッセンブリであってもよい。
2は、デバイス領域である。デバイス領域は、当業者に既知であり、ここでは以上に概要を述べてある。
3は、第1金属配線層である。金属配線を形成するための方法は当業者に知られており、以上に概要を述べてある。金属配線(3)は、ここに記述したように導電性金属から形成される。
4は、バリアである。バリア(4)は、SiwCxOyHz膜または、SiwCxOyHz膜と、a-SiC:H、a-SiN:H、a-SiCN:H、バリア物質(即ちTa、Ti)および別の既知のバリア物質等の1つ以上のバリア物質との組み合わせであってよい。典型的には、バリア物質の組み合わせを使用する場合には、前記物質は配線の異なる部分を被覆する。好ましくは、バリア層は、ここに記載のSiwCxOyHz膜である。好ましくは、層4は、N2Oを用いるトリメチルシランのプラズマ強化化学蒸着によって製造される。
4(a)もまた、ここに記載のようなバリア層である。4(a)は図2のみに表される。
5は、第1層間誘電体である。層間誘電体は、酸化ケイ素、炭化ケイ素、シリコンオキシカーバイド、窒化ケイ素、シリコンオキシニトライド、シリコンカーボニトライド、有機物質、例えばポリイミド、エポキシ、PARYLENE(登録商標)、SiLK(登録商標)、水素シルセスキオキサンから製造されるもの(FOx(登録商標)、XLK(登録商標))等のあらゆる既知の層間物質から製造することができる。さらにまた、層間誘電体は、バリア層としてここに記載したSiwCxOyHz膜であってもよい。これは、SiwCxOyHz膜を使用することの独特の特徴の1つである。金属配線間の間隙を少なくとも部分的に満たすのに十分な厚さで適用されたSiwCxOyHz膜は、誘電物質としても機能する。これは、この物質の低い誘電定数及び低い抵抗のためである。
6は、相互接続である。相互接続(6)は、金属配線の第1層と第2層金属配線とを接続する。相互接続(6)は、金属配線に使用されるものと同一または別の導電性金属から形成されていて良い。
7は、金属配線の第2層である。この第2金属配線(7)は第1金属配線層と同一または別の導電性金属から製造されていてよい。
9は、第2層間誘電体である。第2層間誘電体(9)は第1層間誘電体(5)と同一または相違して良い。
10は、腐食止めである(図2)。この層は、ダマシン技術によって形成されるデバイス中に、金属配線をその中に付設するためのトレンチを形成する際に、別の層中へ腐食が進行するのを防ぐために適用される。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、8.7Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、7Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、6Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、8.7Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、8.7Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
酸化トリメチルシラン膜を、8インチのシリコンウェーファー上に、8.7Torrのチャンバ圧及び370℃の温度で蒸着したところ、下記のような反応性気体が反応器中に流入した。
Applied Materials PECVD装置の気体混合物中において、少量のN2Oを加えてまたは加えずに、SiCH膜を蒸着させた。表1に蒸着パラメータをまとめる。
2 デバイス領域
3 金属配線
4 バリア
Claims (6)
- 半導体物質製の基板として形成された固体状態デバイスと、前記固体状態デバイスを接続する金属配線と、少なくとも前記金属配線上に形成された拡散バリア層とのサブアッセンブリから成り、
前記拡散バリア層が組成SiwCxOyHz(式中、wは18 乃至 20の値を有し、xは18 乃至 21の値を有し、yは5 乃至 38の値を有し、zは25 乃至 32の値を有し、更にw+x+y+z=100原子%である)を有する合金膜であり、該拡散バリア層が、メチル含有シラン及び制御された量の亜酸化窒素を含む反応性気体混合物の化学蒸着によって製造される、集積回路。 - 前記メチル含有シランが、トリメチルシランである、請求項1に記載の集積回路。
- 組成SiwCxOyHz(式中、wは18 乃至 20の値を有し、xは18 乃至 21の値を有し、yは5 乃至 38の値を有し、zは25 乃至 32の値を有し、更にw+x+y+z=100原子%である)を有する合金膜の拡散バリア層を、金属配線を覆って適用することにより、集積回路内における隣接デバイス相互接続間の金属イオンの移動を防止する方法であって、前記拡散バリア層が、メチル含有シラン及び制御された量の亜酸化窒素を含む反応性気体混合物の化学蒸着によって製造される方法。
- メチル含有シランが、トリメチルシランである、請求項3に記載の方法。
- メチル含有シラン1体積部当たり、0.1乃至4.5体積部の亜酸化窒素が存在する、請求項1に記載の集積回路。
- メチル含有シラン1体積部当たり、0.1乃至4.5体積部の亜酸化窒素が存在する、請求項3に記載の方法。
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US25948901P | 2001-01-03 | 2001-01-03 | |
PCT/US2002/000130 WO2002054484A2 (en) | 2001-01-03 | 2002-01-03 | Metal ion diffusion barrier layers |
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JP4152619B2 (ja) * | 2001-11-14 | 2008-09-17 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6890850B2 (en) * | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US6917108B2 (en) * | 2002-11-14 | 2005-07-12 | International Business Machines Corporation | Reliable low-k interconnect structure with hybrid dielectric |
JP4142941B2 (ja) * | 2002-12-06 | 2008-09-03 | 株式会社東芝 | 半導体装置の製造方法 |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
US7081673B2 (en) * | 2003-04-17 | 2006-07-25 | International Business Machines Corporation | Multilayered cap barrier in microelectronic interconnect structures |
US6849561B1 (en) * | 2003-08-18 | 2005-02-01 | Asm Japan K.K. | Method of forming low-k films |
US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
CN100558940C (zh) | 2004-08-18 | 2009-11-11 | 陶氏康宁公司 | 涂布的基片及其制备方法 |
US7622193B2 (en) | 2004-08-18 | 2009-11-24 | Dow Corning Corporation | Coated substrates and methods for their preparation |
KR100967266B1 (ko) * | 2008-05-26 | 2010-07-01 | 주식회사 삼안 | 태양광 추적장치 및 그 추적 방법 |
US8836127B2 (en) * | 2009-11-19 | 2014-09-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect with flexible dielectric layer |
JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
US8461683B2 (en) * | 2011-04-01 | 2013-06-11 | Intel Corporation | Self-forming, self-aligned barriers for back-end interconnects and methods of making same |
US10163981B2 (en) * | 2016-04-27 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal landing method for RRAM technology |
EP3549620A1 (en) * | 2018-04-04 | 2019-10-09 | BIOTRONIK SE & Co. KG | Coated implantable medical device and coating method |
US11152262B2 (en) * | 2018-11-30 | 2021-10-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cut metal gate devices and processes |
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US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
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