TWI272694B - Metal ion diffusion barrier layers - Google Patents

Metal ion diffusion barrier layers Download PDF

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Publication number
TWI272694B
TWI272694B TW091100016A TW91100016A TWI272694B TW I272694 B TWI272694 B TW I272694B TW 091100016 A TW091100016 A TW 091100016A TW 91100016 A TW91100016 A TW 91100016A TW I272694 B TWI272694 B TW I272694B
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Taiwan
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value
metal wiring
integrated circuit
film
atomic
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TW091100016A
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English (en)
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Mark Jon Loboda
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Dow Corning
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    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Description

1272694
申請之美國臨時申請案 本申請案主張2001年1月3日 60/259,489之優先權。 傳，上，如非晶型氮切（a_siN:H)及非晶型氯化碳 、石1 ,lC.H)(材料與半導體積體電路（1C)製造中所用 之接觸或金屬間介雪隔雜，社 ^ ^ ^ 1 ^隔離技術有關，以避免熱或電場驅動 相互連接金屬（擴散。Ic内之金屬擴散作用導致裝 置水久失效。使用該等材料係基於一般電隔離電介質如
Si〇2及類似氧化物相關好 乳^初祁關材枓 < 已知性質但具有不良屏障 f生、著與私路相互連接有關之電阻·電容（RC )延遲最小 化之工業而求，則述碳化物及氮化物已受到挑戰因該等材 料與Si〇2具有相等或較高之介電電容率且導致增加之相互 連接電容。 本發明有關使用低電容率材料，具有siwcx0yHZ組成 之合金薄膜作為有效抗金屬離子如Cu、A1等於多層金屬 積體電路及金屬線路板設計中擴散之有效屏障。 SiwCxOyHz薄膜之功能為阻止金屬離子在相鄰導體（其為電 路中 < 裝置相互連接）之間移動。藉siwCx〇yHz薄膜加入電 路4可靠性可允許使用低電阻導體及低介電常數材料作為 導體間之絕緣介質。 發明概述 本發明有關一種具有更大操作速度及可靠性之改良積體 電路。該電路包括於半導體材料所製得之基材中所形成之 固體狀態裝置之次組裝。該次組裝中之裝置藉導電金屬所 -4 - ，本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1272694 A7 __ B7 五、發明説明（2 ) 形成足金屬接線連接。該金屬接線與具有SiwCx〇yHz組成 之合金薄膜之擴散屏障層接觸（其中W之值為10至33，較好 18至20原子％，X之值為1至66，較好18至21原子％，7之 值為1至66，較好5至38原子％，及z之值為〇丨至“，較好 25 土 32 原子 ％;&w + x + y + z= l〇〇 原子％)。 圖式簡單說明 圖1為使用抹去技術所形成之裝置截面圖。 圖2為使用波紋蝕刻技術形成之裝置截面圖。 詳細說明 本發明有關具有SiwCxOyHz組成之合金薄膜之用途（其中 w之值為10至33，較好18至2〇原子％，X之值為1至μ， 較好1 8至2 1原子％，y之值為i至6 6，較好5至3 8原子 /〇 ’及z之值為〇·ι至60，較好25至32原子％ :及 w+x+y+z勺00原子％)。該SiwCx〇yHz薄膜用以阻止金屬 原子在電路中相鄰裝置相互連接之間移動。siwCx〇yHz薄 膜亦比非晶型氫化氮化矽（a_SiN:H)及非晶型氫化碳化矽 U-SiC:H)具有更低之介電電容率。SiwCx〇yHz薄膜之介電 電谷率可能比該等氮化物及碳化物小5〇%以上。該降低之 介電電容率有助於降低相互連接有關之電容。siwCx〇yHz 薄膜亦比Si〇2薄膜具更低之電容率。因此，除了避免金屬 擴散以外，該材料本身為適宜之電介質。置於多功能材 料’使用SiwCxOyHz薄膜可藉消除金屬間隔離圖中數個中 間層材料之需求而簡化I C製造，且因此降低I c製造成 本。由於SiwCxOyHz薄膜材料為抗金屬擴散之屏障，因此 -5- 本紙張尺度適财國國家標準(CNS) μ規格(21〇χ撕公爱) 1272694 A7 _______ B7_ 五、發明説明（3 ) 可消除相鄰導體金屬本身所用之金屬為主之擴散屏障之需 求。一實例為消除鄰接銅導體之T i或T a為主之層。最 後’該等Ti及Ta為主之層對金屬相互連接中可達到之最 低電阻亦有限制，及其消除具有降低相互連接電阻之機 會。因此，其可主張利用SiwCxOyHz薄膜可藉消除高電容 率介電薄膜及高電阻金屬為主之障壁金屬之需求而可製造 極低RC延遲相互連接。此將導致高速積體電路整體性能 之改良。 本發明方法中所用之積體電路次組裝並不重要且可用本 技藝已知及/或商業製造之任一種。圖1代表藉抹去技術製 造之電路組裝。當使用抹去技術時，製得金屬接線層接著 線路以中間層材料覆蓋。圖2代表使用波紋蝕刻技術製得 之電路組裝。使用波紋蝕刻技術時，在中間層電介質沉積 及形成用以隔離金屬接線之壕溝之後，於壕溝内施加金屬 接線。 用以製造此電路之方法亦為已知且於本發明中並不重 要。此電路實例為包括其上生長有外延層之半導體基材者 (如矽、坤化鎵）。此外延層經適當摻雜形成構成電路主動 固體狀態裝置區域之PN _接合區域。該等主動裝置區域為 藉金屬線路層適當相互連接時可形成積體電路之二極體及 半導體管。圖1顯示此電路組裝（1 )具有裝置區域（2 )及相 互連接違裝置之薄膜金屬接線（3 )。圖2顯示交替電路組裝 (1 )具有裝置區域（2 )及相互連接該裝置之薄膜接線（3 )。 本發明不欲限足應用SiwCxOyHz薄膜於該兩個結構 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公茇)一 1272694 A7
中。本文亦可利用其中s· Γ 、 w x〇yHz薄膜於積體電路中提供 對金屬離子擴散作用之屏障之另一結構。 用於金屬接線層之材料並無_只要其為導電金屬。積 體電路次組裝上之金屬接線層-般為銘或銅薄膜n 金屬接線層可為銀、金、合金、超導體等。 沉積金屬層之方法為本技藝已知。所用之特定方法並不 重要。此万法實例包含各種物理蒸氣沉積(pvD)技術如濺 鍍及電子束蒸發作用。
SiwCxOyHz薄膜係形成與金屬接線層接觸及保護其中金 屬離子可於裝置内擴散之該等區域。當裝置使用抹去技術 形成時，SiwCx〇yHz薄膜在接線塗布至裝置上之後但在施 用任何其他中間層之前施用至接線上。使用波紋蝕刻技術 時^在形成相互連接及金屬接線之前s‘Cx〇yHz薄膜施用 至％溝。SiwCx〇yHz薄膜接著可施加在金屬接線任何剩餘 暴路表面上。另外，SiwCxOyHz薄膜可在金屬接線層下方 施用，例如圖1及2所示之層（4)。另外，亦可選擇恰在接 線上例如藉遮蔽施加SiwCx〇yHz薄膜或可塗布整個表面接 著蚀刻除其中不需要SiwCx〇yHz薄膜之該等區域。 SiwCxOyHz薄膜可與已知擴散屏障材料一起使用。例如， 接線可邵份以傳統屏障金屬覆蓋及接著剩餘接線可以 SiwCxOyHz薄膜覆蓋。
SiwCxOyHz薄膜施加方法對本發明並不重要且許多為本 技藝已知。施用方法實例包含各種化學蒸氣沉積技術如習 知CVD、光化學蒸氣沉積、電漿促進之化學蒸氣沉積 本紙張尺度適用中國國家標準(clsJS) A4規格(21〇x 297公釐) 1272694 A7 ________B7 五、發明説明（5 ) (PECVD)、電子迴轉加速共振（ecr)、噴射蒸氣沉積等， 及各種物理瘵氣沉積技術如濺射、電子束蒸發等。該等方 法包含對悉發物種加入能量（以熱、電漿等狀態）而引起所 需反應或使能量集中在材料固體樣品而引起其沉積。 較好SiwCxOyHz薄膜藉USP專利申請號09/086811 (1998年5月2 9日申請且讓渡給道康寧公司）所述之方法施 用，其中有關如何形成SiwCx〇yHz薄膜之教示併於本文供 參考。依據此方法，SiwCxOyHz薄膜係自包括含甲基之矽 烷及供氧氣體之反應性氣體混合物所製得。可使用之含甲 基足矽烷包含甲基矽烷（CH3SiH3)、二甲基矽烷 、二甲基矽烷（（CHASiH)及四甲基矽烷（（CH3)4Si)，較好 為三甲基矽烷。在沉積室中存在有控制量之氧。氧可藉所 用供氧万式或藉所用供氧氣體量而加以控制。沉積室中存 在太多氧，將產生化學計量接近以〇2之氧化矽。若沉積室 中氧存在不足，則將產生化學計量接近Sic之碳化矽薄 膜。在該等狀況下，將無法達成薄膜所需性質。供氧氣體 包含（但不限於）空氣、臭氧、氧氣、一氧化二氮及二氧化 氮，較佳為一氧化二氮。供氧氣體量典型上每體積份含甲 基之矽烷為小於5體積份之供氧氣體，更好每體積份含甲 基t矽烷為0.1至4.5體積份之供氧氣體。熟知本技藝者易 於依據供氧氣體類型及沉積條件而決定供氧氣體量，產生 具有SiwCxOyHz組成之薄膜（其中w之值為1〇至33，較好 18至20原子％，x之值為1至66，較好18至21原子％，y 之值為1至6 6，較好5至3 8原子％，及z之值為〇」至6 〇， -8 A7 B7 1272694 五、發明説明（6 較好2 5至3 2原子％ :及w+x+y+z=100原子％ )。 習知化學蒸氣沉積中，塗層係藉使所需前驅物氣體液流 通過加熱之基材上而沉積。當前驅物氣體接觸熱表面時反 應及沉積塗層。基材溫度在約100-1000°C即足以於數分鐘 至數小時内形成該等塗層，視前驅物及所需塗層厚度而 定。若需要，此方法中可使用反應性金屬以加速沉積。 PECVD中，所需前驅物氣體藉使其通過電聚場而反應。 因此形成之反應性物種接著集中在基材易附著處。通常， 此方法比C V D更具有之優點為可使用較低基材溫度。例 如，基材溫度可為約50。(：至約600°C。 此方法中所用之電漿可包括得自各種來源之能源如放 遠、典線頻率或彳政波範圍之電磁場、雷射或粒子束。通常 在大部分電漿沉積方法中較好使用在適度功率密度（〇· i _5 瓦特/公分2)之無線頻率（10 kHz - 102 MHz)或微波（0.1-10 GHz)能量。然而該特定頻率、功率及壓力通常適合所用 前驅物氣體及設備。 本文可使用本技藝已知形成SiwCx〇yHz薄膜之其他前驅 物。该岫驅物可為提供S i、C、〇及H元素或前驅物如甲 基矽氧 < 單一化合物。或該前驅物可為化合物之混合物而 提供Si、C、Ο及Η元素，例如矽烷、氧源（亦即〇2、〇3、 Η2〇2、Ν2〇等）及有機化合物（亦即甲烷）；或含甲基之矽 烷及上述氧源。形成SiwCxOyHz薄膜之較佳方法為三甲基 石夕燒以Νζ〇之電漿促進之化學蒸氣沉積。 本又所用之薄膜亦可藉液體前驅物藉旋塗或其他液體沉 -9 - 1272694
積技術塗布而產生。塗布後接著固化之有機矽氧烷及倍半 矽氧烷可用以產生形成SiwCxOyHz薄膜。 本文所用之薄膜可藉式SiwCxOyHz表示（其中w之值為1〇 至3 3，較好1 8至2 0原子％，x之值為！至6 6，較好丨8至 2 1原子％，y之值為1至6 6，較好3 1至3 8原子。/〇，及z之 值為0.1至60，較好25至32原子％ ; &w+x+y+z=iQQ原子 °/〇。其他元素如氟（F)可導入薄膜中，只要該等元素不改 變薄膜之擴散屏障性質即可。 本文所形成之裝置一般為多層裝置，但可於單一層裝置 中使用该SiwCxOyHz薄膜。其他材料如傳統介電材料可施 加於該SiwCxOyHz薄膜上。圖1顯示藉相互連接（6 )與接線 第一層之經選擇區域相互連接之第二金屬接線層（7)。然 而’ SiwCxOyHz薄膜需沉積在電介質及金屬之間以避免金 屬擴散入電介質中。此SiwCxOyHz薄膜可如上述形成。此 方式中’金屬接線夾於SiwCxOyHz薄膜間。此方法可對電 路中金屬化各層重複數次。 亦須注意此技術可施加至接線板上於其上架設有上述電 路。金屬接線及SiwCxOyHz薄膜在該等接線板上之結構可 與上述相同。其他用途包含覆蓋金屬中不期望金屬擴散入 另一層之處。 圖1及2中該層可如下數： 1為電路組裝。此可為本技藝已知之任何電路組裝。 2為裝置區域。裝置區域為本技藝已知且概述如上。 3為第一金屬接線層。形成金屬接線層之方法為本技藝 -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1272694 A7 「__B7 五、發明説明（8 ) 已知且概述如上。該金屬接線（3)係自導電金屬 形成。
.4為屏障（擴散屏障層）。屏障（4)可為SiwCx〇yHz薄膜或 SiwCxOyHz薄膜與一或多種屏障材料如a_Sic:H、η、 a-SiCN:H、屏障金屬（亦即Ta、Ti)及其他已知屏障材料 之組合。典型’當使用屏障材料之組合時，該材料覆當 接線不同部分。較好該屏障層為本文所述之siwCx〇y礼J 膜。較好層4藉三甲基矽烷與Να之電漿增進之化y1 沉積所製得》 & 4(a)亦為本文所述之屏障層（擴散屏障層）。4(a)僅表示 於圖2。 #' 5為第一中間介電層。此中間介電層可自任何已知中間 層材料如氧化矽、碳化矽、氧碳化矽、氮化矽、氧氮化 碎、碳氮化矽、有機材料如聚醯亞胺、環氧、ParyleneTM 、SiLK®、自氫倍半矽氧烷所製得者（F〇x@、xlkTM)所製 得。此外，中間介電層可為本文所述iSiwCx〇yHz薄膜作 為屏障層。此為使用SiwCxOyHz薄膜之獨特特徵。該 SiwCx〇yHz薄膜當以足夠厚度至少部分填入金屬接線間間 隙時，亦可作為介電材料之功能。此係由於此材料之低介 電常數及低電阻之故。 6為相互連接。相互連接（6)使金屬接線之第一層與第二 層金屬接線連接。此相互連接（6)可自金屬接線所用之相 同或不同導電金屬形成。 7為金屬接線之第二層。此第二金屬接線（7 )可自與第一 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1272694 A7 ____ B7 五、發明説明（9 ) 金屬接線層相同或不同導電金屬所製得。 9為第二金屬間電介質。該第二中間介電層（9)可與第一 中間介電層（5)相同或不同。 1 〇為姓刻柱塞（圖2)。此層施加以避免形成壕溝時藉波 紋餘刻技術所形成之裝置中金屬接線中向下蝕刻至另一 層。 本發明不欲限制於僅具有該等層之裝置。可影響偏極 化、鈍化、保護或裝置操作之其他層可於裝置中或之上形 成。 實例 下列提供非限制性實例因此熟知本技藝者更可了解本發 明。 下列實例證明沉積氧化之有機錫烷薄膜具有優異擴散屏 障性質及低k值。該等實例使用化學蒸氣沉積室” DxZ，，進 行’其包含固體狀態R F相符單元及藉Applied材料公司所 製造之室加工套組。 實例1 在8·7托耳室壓及370°C溫度在8-吋矽晶圓上沉積氧化之 三甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣 體： 三甲基矽烷（CH3)3SiH，在 210 seem 乱 ’ He ’ 在 600 seem 一氧化碎 ’ CΟ2，在 165 seem 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) -12- 1272694 A7 B7 五、發明説明（ ) 基材放置離氣體分配淋浴頭（gas distribution showerhead)4 3 5 密耳（mils)處及對淋浴頭施加5 8 5瓦高頻功率（13.56 MHz) 供電漿促進沉積作用。氧化之三甲基矽烷材料之折射指數 為1 .88，其以1467A/分鐘之速率沉積晶圓均勻度為2%且 介電常數為4.5。 實例2 在7托耳室壓及370°C溫度在8 -吋矽晶圓上沉積氧化之三 甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣體： 三甲基矽烷（CH3)3SiH，在 350 seem 氦，He，在 300 seem 一氧化二氮，N20，在 420 seem 基材放置離氣體分配淋浴頭3 0 0密耳處及對淋浴頭施加 8 0 0瓦高頻功率（13.56 MHz)供電漿促進沉積作用。氧化 之三甲基矽烷材料之折射指數為1.46，其以14080A /分鐘 之速率沉積晶圓均勻度為3 %且介電常數為2.6。 實例3 在6托耳室壓及370°C溫度在8 -吋矽晶圓上沉積氧化之三 甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣體·· 三甲基矽烷（CH3)3SiH，在 350 seem 氦，He ，在 300 seem 一氧化二氮，N20，在 820 seem 基材放置離氣體分配淋浴頭4 0 0密耳處及對淋浴頭施加 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1272694 A7 B7 五、發明説明（ 62 5瓦高頻功率（13 56 MHz)加上95瓦低頻功率（35〇 ΚΗζ) 供電漿促進沉積作用。氧化之三甲基矽烷材料之折射指數 為1 .44，其以16438Α /分鐘之速率沉積晶圓均勻度為5% 且介電常數為2.5。 實例4 在8.7托耳室壓及37(rc溫度在8_吋矽晶圓上沉積氧化之 二甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣 體： 三甲基矽烷（CH3)3SiH，在 210 seem 氦，He，在 600 seem 氧氣，〇2 ，在 100 seem 裝 訂 基材放置離氣體分配淋浴頭4 3 5密耳處及對淋浴頭施加 7 00瓦高頻功率（13·56 MHz)供電漿促進沉積作用。氧化 之二甲基矽fe材料之折射指數為1·4ΐ，其以5965A /分鐘之 速率沉積晶圓均勻度為4%且介電常數為2.6。 實例5 線 在8.7托耳室壓及37〇1溫度在8•吋矽晶圓上沉積氧化之 三甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣 體： 、 三甲基矽烷（CH3)3SiH，在 200 seem 氦，He ，在 800 seem 一氧化二氮，N20，在 150 seem 氮氣，n2，在 200 seem -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1272694 A7 B7 五、發明説明（ ） 基材放置離氣體分配淋浴頭4 3 5密耳處及對淋浴頭施加 5 8 5瓦高頻功率（13.56 MHz)供電漿促進沉積作用。氧化 之三甲基矽烷材料之折射指數為1.59，其以2058A/分鐘之 速率沉積晶圓均勻度為6.5%且介電常數為3.4。 實例6 在8.7托耳室壓及370°C溫度在8 -吋矽晶圓上沉積氧化之 三甲基矽烷薄膜，由其中於反應器中吹入下列反應性氣體： 三甲基矽烷（CH3)3SiH，在 200 seem 氦，He ，在 800 seem 一氧化二氮，N20，在 150 seem 氮氣，N2，在 100 seem 基材放置離氣體分配淋浴頭4 3 5密耳處及對淋浴頭施加 5 8 5瓦高頻功率（13.56 MHz)供電漿促進沉積作用。氧化 之三甲基矽烷材料之折射指數為1.48，其以5410A/分鐘之 速率沉積晶圓均勾度為5%且介電常數為3.0。 實例7 添加及添加少量N20於Applied材料公司之PEC VD工具中 之氣體混合物中進行SiCH薄膜沉積。表1概述沉積參數。 實驗 編號 沉積 時間(秒） RF (W) 壓力(T) (CH3)3SiH (seem) He (seem) n20 (seem) k 7-1 46.0 585 8.7 210 600 0 4.6 7-2 39.2 585 8.7 210 600 61 3.8 7-3 39.2 585 8.7 210 600 81 3.5 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1272694 A7
7-4 39.2 585 7胃5 ——--- 46.0 585 7^__ __28 585 a ------ uuu ] ()] 3 g J電常數k使用以c u電極\ "~ 一·~ 量，及在1MHZ之結果示於表^成^電容器結構加以測 電容率k降低。 、表中°併人更多n2〇略使相對 :室溫之介電衰退強度測量顯示包含N2〇沉積薄膜之方 决展現較高之衰退強度在4_5 Mv/ 相好/甘从4，a /Cm乾圍内，與無N20者 =、：广―。該等材料另-測試中，對銅擴 ^偏斜·溫度-應力測試，係於電容器施加高電場(25 MV/cm)同時維持在25{rc。對 · 兩打士、μ 包枝她加正電壓將嘗試驅動 电極中<銅通過電容器至對侧電極。當此發生時，電 將變成導電且發生短路。藉由達到短電路條 時 間評估屏障性質。已發現無N2Q之下沉積之薄費膜= a-SlC:H)產生電容器失效之時間約3〇〇〇〇 8〇〇〇〇秒比 n2o下沉積之薄膜所測得者低1(M⑽倍。因此導入氧 亦可改良屏障性質。

Claims (1)

1272694 as B8 --C8 上 ----—__ D8 R、申請專 …種積體電路’係、由在半導體材料所製得之基材中所形 $ <固體狀態裝置之次組裝、連接該固體狀態裝置之金 :接、、泉、及至少在該金屬接線上形成之擴散屏障層所構 成，其中該擴散屏障層為具有siwCx0yHz組成之合金薄 膜，其中W之值為10至33，X之值為，y之值為！ 6 6 、 Z足值為〇·1至60，及W + X + y + z=1〇〇原子％，其中 2政屏障層係由包括含甲基之矽烷及控制量之一氧化二 2氮之反應性氣體混合物藉化學蒸氣沉積所製得。 •如:請專利範圍第1項之積體電路，其中含甲基之碎燒 為三甲基石夕境。 3.如申請專利範圍第i項之積體電路，其中w值為18至20 原子％。 4·如申請專利範圍第1項之積體電路，其中χ值為i 8至2丄 原子％。 如申清專利範圍第1項之積體電路，其中y值為5至3 8原 予％。 ^ 6·如申請專利範圍第丄項之積體電路’其中乙值為^至” 原子％。 7·如申請專利範圍第1項之積體電路，其中金屬接線為 銘。 8·如申請專利範圍第1項之積體電路，其中金屬接線為 J同。 一種避免具有金屬接線之電路中相鄰裝置相互連接間金 屬離子移動之方法，其係於至少該金屬接線上施加具有
1272694
SiwCxOyHz組成之合金薄膜之擴散屏障層，其中w之值為 10至33，x之值為466，y之值為z之值為 0·1至60，及w+x+y+z=1〇〇原子％，其中擴散屏障層係 由包括含甲基之㈣及控制量之—氧化二氮之反應性氣 體混合物藉化學蒸氣沉積所製得。 10. 如申請專利範圍第9項之方法，其中含甲基之錢為三 甲基矽烷。 11. 如申請專利範圍第1〇項之方法，其中w值為18至2〇原 子％。 12. 如申請專利範圍第丨丨項之方法，其中x值為18至21原子 %。 13·如申請專利範圍第12項之方法，其中y值為”至”原子 %。 14.如申請專利範圍第13項之方法，其中z值為25至32原子 % 〇 15·如申請專利範圍第1 4項之方法，其中金屬接線為鋁。 16·如申請專利範圍第1 5項之方法，其中金屬接線為銅。 -2 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
TW091100016A 2001-01-03 2002-01-03 Metal ion diffusion barrier layers TWI272694B (en)

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