JP2002285333A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2002285333A
JP2002285333A JP2001086930A JP2001086930A JP2002285333A JP 2002285333 A JP2002285333 A JP 2002285333A JP 2001086930 A JP2001086930 A JP 2001086930A JP 2001086930 A JP2001086930 A JP 2001086930A JP 2002285333 A JP2002285333 A JP 2002285333A
Authority
JP
Japan
Prior art keywords
gas
ruthenium
film
partial pressure
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001086930A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002285333A5 (enExample
Inventor
Yasuhiro Shimamoto
泰洋 嶋本
Masahiko Hiratani
正彦 平谷
Yuichi Matsui
裕一 松井
Toshihide Namatame
俊秀 生田目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001086930A priority Critical patent/JP2002285333A/ja
Priority to TW091104128A priority patent/TW557501B/zh
Priority to US10/101,600 priority patent/US6743739B2/en
Priority to KR1020020016057A priority patent/KR20020076147A/ko
Publication of JP2002285333A publication Critical patent/JP2002285333A/ja
Priority to US10/795,430 priority patent/US6992022B2/en
Publication of JP2002285333A5 publication Critical patent/JP2002285333A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001086930A 2001-03-26 2001-03-26 半導体装置の製造方法 Pending JP2002285333A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001086930A JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法
TW091104128A TW557501B (en) 2001-03-26 2002-03-06 Process for fabrication of semiconductor device
US10/101,600 US6743739B2 (en) 2001-03-26 2002-03-21 Fabrication method for semiconductor integrated devices
KR1020020016057A KR20020076147A (ko) 2001-03-26 2002-03-25 반도체 장치의 제조 방법
US10/795,430 US6992022B2 (en) 2001-03-26 2004-03-09 Fabrication method for semiconductor integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001086930A JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002285333A true JP2002285333A (ja) 2002-10-03
JP2002285333A5 JP2002285333A5 (enExample) 2005-03-17

Family

ID=18942238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001086930A Pending JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6743739B2 (enExample)
JP (1) JP2002285333A (enExample)
KR (1) KR20020076147A (enExample)
TW (1) TW557501B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311922A (ja) * 2002-12-24 2004-11-04 Seiko Epson Corp 電極膜およびその製造方法、ならびに強誘電体メモリおよび半導体装置
JP2006041060A (ja) * 2004-07-23 2006-02-09 Nec Electronics Corp 半導体装置およびその製造方法
WO2007102333A1 (ja) * 2006-02-28 2007-09-13 Tokyo Electron Limited ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体
JP2008538129A (ja) * 2005-03-31 2008-10-09 東京エレクトロン株式会社 低抵抗ルテニウム層の低温化学気相成長
JP2011517089A (ja) * 2008-04-08 2011-05-26 マイクロン テクノロジー， インク． 高アスペクト比の開口部

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US7014709B1 (en) * 2001-01-19 2006-03-21 Novellus Systems, Inc. Thin layer metal chemical vapor deposition
JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法
JP4218350B2 (ja) * 2002-02-01 2009-02-04 パナソニック株式会社 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ
KR100476556B1 (ko) * 2002-04-11 2005-03-18 삼성전기주식회사 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
JP2004146559A (ja) * 2002-10-24 2004-05-20 Elpida Memory Inc 容量素子の製造方法
US20040146643A1 (en) * 2003-01-24 2004-07-29 Shih-Liang Chou Method of determining deposition temperature
KR100505674B1 (ko) * 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US20050253268A1 (en) * 2004-04-22 2005-11-17 Shao-Ta Hsu Method and structure for improving adhesion between intermetal dielectric layer and cap layer
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
DE102004061094A1 (de) * 2004-12-18 2006-06-22 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen sowie dazu geeignete Ausgangsstoffe
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
KR100672731B1 (ko) * 2005-10-04 2007-01-24 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
KR20080101893A (ko) * 2006-02-08 2008-11-21 제이에스알 가부시끼가이샤 금속막의 형성 방법
WO2007106788A2 (en) 2006-03-10 2007-09-20 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
JP2007266464A (ja) * 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US7833358B2 (en) * 2006-04-07 2010-11-16 Applied Materials, Inc. Method of recovering valuable material from exhaust gas stream of a reaction chamber
DE102006027932A1 (de) * 2006-06-14 2007-12-20 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen
US8524931B2 (en) * 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
US20090236908A1 (en) * 2008-03-21 2009-09-24 Kun-Woo Park Reservoir capacitor and semiconductor memory device including the same
JP4764461B2 (ja) * 2008-09-17 2011-09-07 株式会社東芝 半導体装置
US8663735B2 (en) * 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
SG174423A1 (en) 2009-03-17 2011-10-28 Advanced Tech Materials Method and composition for depositing ruthenium with assistive metal species
KR101096840B1 (ko) * 2010-01-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films
US10950689B2 (en) * 2015-09-23 2021-03-16 Nanyang Technological University Semiconductor device with a through-substrate via hole having therein a capacitor and a through-substrate via conductor

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US5314727A (en) * 1992-07-28 1994-05-24 Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota Chemical vapor deposition of iron, ruthenium, and osmium
JP3334605B2 (ja) * 1998-05-07 2002-10-15 三菱電機株式会社 電極形成用ｃｖｄ原料、およびそれを用いて形成されたキャパシタ用電極、配線膜
JP3905977B2 (ja) * 1998-05-22 2007-04-18 株式会社東芝 半導体装置の製造方法
US6284655B1 (en) * 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
WO2000022658A1 (en) * 1998-10-14 2000-04-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
KR100691495B1 (ko) * 1999-07-24 2007-03-09 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 형성 방법
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311922A (ja) * 2002-12-24 2004-11-04 Seiko Epson Corp 電極膜およびその製造方法、ならびに強誘電体メモリおよび半導体装置
JP2006041060A (ja) * 2004-07-23 2006-02-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2008538129A (ja) * 2005-03-31 2008-10-09 東京エレクトロン株式会社 低抵抗ルテニウム層の低温化学気相成長
WO2007102333A1 (ja) * 2006-02-28 2007-09-13 Tokyo Electron Limited ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体
JP5207962B2 (ja) * 2006-02-28 2013-06-12 東京エレクトロン株式会社 ルテニウム膜の成膜方法
JP2011517089A (ja) * 2008-04-08 2011-05-26 マイクロン テクノロジー， インク． 高アスペクト比の開口部
US8760841B2 (en) 2008-04-08 2014-06-24 Micron Technology, Inc. High aspect ratio openings
US9595387B2 (en) 2008-04-08 2017-03-14 Micron Technology, Inc. High aspect ratio openings

Also Published As

Publication number Publication date
KR20020076147A (ko) 2002-10-09
US20020192899A1 (en) 2002-12-19
US20040171210A1 (en) 2004-09-02
US6992022B2 (en) 2006-01-31
US6743739B2 (en) 2004-06-01
TW557501B (en) 2003-10-11

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