JP4804725B2 - 半導体装置の導電性構造体の形成方法 - Google Patents
半導体装置の導電性構造体の形成方法 Download PDFInfo
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- JP4804725B2 JP4804725B2 JP2004150986A JP2004150986A JP4804725B2 JP 4804725 B2 JP4804725 B2 JP 4804725B2 JP 2004150986 A JP2004150986 A JP 2004150986A JP 2004150986 A JP2004150986 A JP 2004150986A JP 4804725 B2 JP4804725 B2 JP 4804725B2
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- 238000000034 method Methods 0.000 title claims description 158
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 187
- 239000002184 metal Substances 0.000 claims description 187
- 230000004888 barrier function Effects 0.000 claims description 153
- 239000007789 gas Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- 238000000231 atomic layer deposition Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 11
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 229910008482 TiSiN Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910004200 TaSiN Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 238000000746 purification Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010943 off-gassing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 229910000086 alane Inorganic materials 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Description
20 下部導電パターン
30 層間絶縁膜
40 バリア金属膜
42 他のバリア金属膜
50 上部導電膜
Claims (35)
- 半導体基板を提供する段階と、
前記半導体基板上に下部導電パターンを形成する段階と、
前記下部導電パターン上にバリア金属膜を形成する段階と、
前記バリア金属膜をハロゲン族元素を含むガスを使って浄化する段階と、
前記バリア金属膜上に上部導電膜を形成する段階と、を含み、
前記バリア金属膜は、金属有機化学気相蒸着工程と原子層蒸着工程とのいずれかの工程によりコンタクトホールまたはビアホールに形成され、
前記バリア金属膜を浄化する段階は、炭素の不十分な除去及びそれに起因する前記バリア金属膜を介した酸素の放出を低減させるために、前記バリア金属膜の表面の炭素を洗浄(cleaning)する工程であり、
前記バリア金属膜を浄化する前に、前記バリア金属膜に含まれたガスを除去する段階をさらに含む
ことを特徴とする導電性構造体の形成方法。 - 前記ガスは遷移金属をさらに含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記ガスはヘリウム、ネオン、アルゴン、水素及び/または窒素をさらに含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は200乃至500℃の温度で前記バリア金属膜を浄化する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は300乃至450℃の温度で、500乃至10000sccmの流量で供給されるアルゴンガス及び1乃至100sccmの流量で供給されるTiCl4ガスを使って前記バリア金属膜を浄化する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は1乃至100torrの圧力で、1秒乃至10分の時間の間前記バリア金属膜を浄化する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜に含まれたガスを除去する段階は、200乃至500℃の温度及び1mTorr乃至100Torrの圧力で、不活性ガスを使って前記バリア金属膜に含まれたガスを除去する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜は第1バリア金属膜であることを特徴とし、
前記形成方法は前記上部導電膜を形成する前に前記第1バリア金属膜上に第2バリア金属膜を形成する段階をさらに含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜は第1バリア金属膜であることを特徴とし、
前記形成方法は前記上部導電膜を形成する前に前記第1バリア金属膜上に第2バリア金属膜を形成する段階をさらに含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記第2バリア金属膜を形成する段階はスパッタリングを含む物理的気相蒸着技術を使って前記第2バリア金属膜を形成する段階を含む
ことを特徴とする請求項9に記載の導電性構造体の形成方法。 - 前記第2バリア金属膜はチタン窒化膜TiN、チタンシリコン窒化膜TiSiN、タンタルシリコン窒化膜及びタンタル窒化膜TaNのうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項9に記載の導電性構造体の形成方法。 - 前記バリア金属膜を形成する段階は前記原子層蒸着工程を使って前記バリア金属膜を形成する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記原子層蒸着工程を使って前記バリア金属膜を形成する段階及び前記バリア金属膜を浄化する段階は少なくとも二度実施される
ことを特徴とする請求項12に記載の導電性構造体形成方法。 - 前記原子層蒸着工程を使って前記バリア金属膜を形成する段階、前記バリア金属膜に含まれたガスを除去する段階、及び前記バリア金属膜を浄化する段階は少なくとも二度実施される
ことを特徴とする請求項12に記載の導電性構造体の形成方法。 - 前記バリア金属膜は第1バリア金属膜であることを特徴とし、
前記形成方法は前記上部導電膜を形成する前に前記第1バリア金属膜上に第2バリア金属膜を形成する段階をさらに含む
ことを特徴とする請求項12に記載の導電性構造体の形成方法。 - 前記下部導電パターンはタングステン、アルミニウム、多結晶シリコン、銅、チタン、チタン窒化膜、タンタル、タンタルシリコン窒化膜、及びタンタル窒化膜のうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜はチタン窒化膜、チタンシリコン窒化膜、タンタルシリコン窒化膜及びタンタル窒化膜のうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜を形成する段階は金属有機化学気相蒸着工程を使って前記バリア金属膜を形成する段階を含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記上部導電膜はタングステン、アルミニウム、多結晶シリコン及び銅のうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する前に、プラズマで前記バリア金属膜を処理する段階をさらに含む
ことを特徴とする請求項1に記載の導電性構造体の形成方法。 - 前記プラズマは窒素ガス及び/または水素ガスを含む工程ガスを含む
ことを特徴とする請求項20に記載の導電性構造体の形成方法。 - 半導体基板上に下部導電パターンを形成する段階と、
前記下部導電パターンを含む半導体基板上に、金属有機前駆体を使ってバリア金属膜を蒸着する段階と、
前記蒸着されたバリア金属膜を浄化する段階と、
前記浄化されたバリア金属膜を含む半導体基板上に、上部導電膜を形成する段階と、を含み、
前記バリア金属膜を浄化する段階はTiCl4ガス及びアルゴンガスを含む工程ガスを使い、
前記バリア金属膜は、金属有機化学気相蒸着工程と原子層蒸着工程とのいずれかの工程によりコンタクトホールまたはビアホールに形成され、
前記バリア金属膜を浄化する段階は、炭素の不十分な除去及びそれに起因する前記バリア金属膜を介した酸素の放出を低減させるために、前記バリア金属膜の表面の炭素を洗浄(cleaning)する工程であり、
前記バリア金属膜を浄化する前に、前記バリア金属膜に含まれたガスを除去する段階をさらに含む
ことを特徴とする半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜はチタン窒化膜TiN、チタンシリコン窒化膜TiSiN、タンタルシリコン窒化膜TaSiN、及びタンタル窒化膜TaNのうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記金属有機前駆体はTDEAT及びTDMATのうちの一つを使う
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記原子層蒸着工程は窒素N2、水素H2、アンモニアNH3、及び四塩化チタンTiCl4のうちから選択された少なくとも一つ以上のパージガスを使うパージ工程を含む
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜を蒸着する段階はプラズマ処理する段階をさらに含む
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記プラズマ処理は窒素ガス及び水素ガスを含む工程ガスを使って実施する
ことを特徴とする請求項26に記載の半導体装置の導電性構造体の形成方法。 - 前記ガスを除去する段階は200℃乃至500℃の温度、1mTorr乃至100Torrの圧力で実施する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は200℃乃至500℃の温度で実施する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記アルゴンガスは500乃至10000sccmの流量で供給され、前記TiCl4ガスは1乃至100sccmの流量で供給される
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は1乃至100torrの圧力で実施する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜を浄化する段階は1秒乃至10分の時間の間実施する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜は第1バリア金属膜であることを特徴とし、
前記形成方法は前記第1バリア金属膜を浄化した後、第2バリア金属膜を形成する段階をさらに含み、前記第2バリア金属膜はスパッタリング技術を使って形成する
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。 - 前記第2バリア金属膜はチタン窒化膜TiN、チタンシリコン窒化膜TiSiN、タンタルシリコン窒化膜及びタンタル窒化膜TaNのうちから選択された少なくとも一つの物質で形成する
ことを特徴とする請求項33に記載の半導体装置の導電性構造体の形成方法。 - 前記バリア金属膜を蒸着する段階及び前記バリア金属膜を浄化する段階は少なくとも一度繰り返して実施される
ことを特徴とする請求項22に記載の半導体装置の導電性構造体の形成方法。
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US20080174021A1 (en) * | 2007-01-18 | 2008-07-24 | Samsung Electronics Co., Ltd. | Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication thereof and methods of fabricating the same |
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