JP2019062190A5 - - Google Patents
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- Publication number
- JP2019062190A5 JP2019062190A5 JP2018154364A JP2018154364A JP2019062190A5 JP 2019062190 A5 JP2019062190 A5 JP 2019062190A5 JP 2018154364 A JP2018154364 A JP 2018154364A JP 2018154364 A JP2018154364 A JP 2018154364A JP 2019062190 A5 JP2019062190 A5 JP 2019062190A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- copper
- ruthenium
- titanium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023159999A JP2023182638A (ja) | 2017-08-22 | 2023-09-25 | 銅配線のためのシード層 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762548604P | 2017-08-22 | 2017-08-22 | |
| US62/548,604 | 2017-08-22 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023159999A Division JP2023182638A (ja) | 2017-08-22 | 2023-09-25 | 銅配線のためのシード層 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019062190A JP2019062190A (ja) | 2019-04-18 |
| JP2019062190A5 true JP2019062190A5 (enExample) | 2021-09-30 |
| JP7634930B2 JP7634930B2 (ja) | 2025-02-25 |
Family
ID=63350353
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018154364A Active JP7634930B2 (ja) | 2017-08-22 | 2018-08-21 | 銅配線のためのシード層 |
| JP2023159999A Pending JP2023182638A (ja) | 2017-08-22 | 2023-09-25 | 銅配線のためのシード層 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023159999A Pending JP2023182638A (ja) | 2017-08-22 | 2023-09-25 | 銅配線のためのシード層 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10847463B2 (enExample) |
| EP (1) | EP3447793B1 (enExample) |
| JP (2) | JP7634930B2 (enExample) |
| KR (1) | KR20190021184A (enExample) |
| CN (1) | CN109461698B (enExample) |
| TW (1) | TWI803510B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11177162B2 (en) * | 2019-09-17 | 2021-11-16 | International Business Machines Corporation | Trapezoidal interconnect at tight BEOL pitch |
| CN114664656A (zh) * | 2020-05-22 | 2022-06-24 | 北京屹唐半导体科技股份有限公司 | 使用臭氧气体和氢自由基的工件加工 |
| US11410881B2 (en) * | 2020-06-28 | 2022-08-09 | Applied Materials, Inc. | Impurity removal in doped ALD tantalum nitride |
| US11764157B2 (en) * | 2020-07-23 | 2023-09-19 | Applied Materials, Inc. | Ruthenium liner and cap for back-end-of-line applications |
| WO2025005521A1 (ko) * | 2023-06-30 | 2025-01-02 | 주성엔지니어링(주) | 전극 형성 방법 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7910165B2 (en) * | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| US7101790B2 (en) | 2003-03-28 | 2006-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a robust copper interconnect by dilute metal doping |
| JP2006097044A (ja) | 2004-09-28 | 2006-04-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法 |
| US7265048B2 (en) * | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
| US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
| JP2008098449A (ja) * | 2006-10-12 | 2008-04-24 | Ebara Corp | 基板処理装置及び基板処理方法 |
| US20080164613A1 (en) | 2007-01-10 | 2008-07-10 | International Business Machines Corporation | ULTRA-THIN Cu ALLOY SEED FOR INTERCONNECT APPLICATION |
| US20100200991A1 (en) * | 2007-03-15 | 2010-08-12 | Rohan Akolkar | Dopant Enhanced Interconnect |
| US20080223287A1 (en) * | 2007-03-15 | 2008-09-18 | Lavoie Adrien R | Plasma enhanced ALD process for copper alloy seed layers |
| US7659204B2 (en) * | 2007-03-26 | 2010-02-09 | Applied Materials, Inc. | Oxidized barrier layer |
| US7737028B2 (en) | 2007-09-28 | 2010-06-15 | Applied Materials, Inc. | Selective ruthenium deposition on copper materials |
| JP2009116952A (ja) * | 2007-11-06 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体およびこれを用いた磁気記憶装置 |
| TW200951241A (en) | 2008-05-30 | 2009-12-16 | Sigma Aldrich Co | Methods of forming ruthenium-containing films by atomic layer deposition |
| US7964497B2 (en) * | 2008-06-27 | 2011-06-21 | International Business Machines Corporation | Structure to facilitate plating into high aspect ratio vias |
| US20090321935A1 (en) | 2008-06-30 | 2009-12-31 | O'brien Kevin | Methods of forming improved electromigration resistant copper films and structures formed thereby |
| US8084104B2 (en) | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
| JP2010215982A (ja) | 2009-03-18 | 2010-09-30 | Tosoh Corp | ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜 |
| JP2012074608A (ja) * | 2010-09-29 | 2012-04-12 | Tokyo Electron Ltd | 配線形成方法 |
| CN102332426A (zh) * | 2011-09-23 | 2012-01-25 | 复旦大学 | 一种用于纳米集成电路的铜扩散阻挡层的制备方法 |
| US9076661B2 (en) * | 2012-04-13 | 2015-07-07 | Applied Materials, Inc. | Methods for manganese nitride integration |
| US9142509B2 (en) * | 2012-04-13 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Copper interconnect structure and method for forming the same |
| CN102903699A (zh) * | 2012-10-15 | 2013-01-30 | 复旦大学 | 一种铜互连结构及其制备方法 |
| US20140134351A1 (en) * | 2012-11-09 | 2014-05-15 | Applied Materials, Inc. | Method to deposit cvd ruthenium |
| CN103266304B (zh) | 2013-05-31 | 2015-12-23 | 江苏科技大学 | 一种高热稳定性无扩散阻挡层Cu(Ru)合金材料的制备方法 |
| US9984975B2 (en) * | 2014-03-14 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company | Barrier structure for copper interconnect |
| JP6278827B2 (ja) | 2014-05-14 | 2018-02-14 | 株式会社Adeka | 銅化合物、薄膜形成用原料及び薄膜の製造方法 |
| US20160032455A1 (en) | 2014-07-31 | 2016-02-04 | Applied Materials, Inc. | High through-put and low temperature ald copper deposition and integration |
| US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
| US10002834B2 (en) | 2015-03-11 | 2018-06-19 | Applied Materials, Inc. | Method and apparatus for protecting metal interconnect from halogen based precursors |
| KR20160123793A (ko) * | 2015-04-17 | 2016-10-26 | 포항공과대학교 산학협력단 | 이중층 구조를 가지는 저항변화메모리 및 이중층 구조를 가지는 저항변화메모리의 제조방법 |
| CN105355620B (zh) * | 2015-12-17 | 2018-06-22 | 上海集成电路研发中心有限公司 | 一种铜互连结构及其制造方法 |
-
2018
- 2018-08-13 US US16/102,533 patent/US10847463B2/en active Active
- 2018-08-17 EP EP18189568.1A patent/EP3447793B1/en not_active Not-in-force
- 2018-08-21 JP JP2018154364A patent/JP7634930B2/ja active Active
- 2018-08-22 CN CN201810960756.9A patent/CN109461698B/zh active Active
- 2018-08-22 KR KR1020180097909A patent/KR20190021184A/ko not_active Ceased
- 2018-08-22 TW TW107129279A patent/TWI803510B/zh active
-
2023
- 2023-09-25 JP JP2023159999A patent/JP2023182638A/ja active Pending
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