JP2003524888A5 - - Google Patents
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- Publication number
- JP2003524888A5 JP2003524888A5 JP2001531142A JP2001531142A JP2003524888A5 JP 2003524888 A5 JP2003524888 A5 JP 2003524888A5 JP 2001531142 A JP2001531142 A JP 2001531142A JP 2001531142 A JP2001531142 A JP 2001531142A JP 2003524888 A5 JP2003524888 A5 JP 2003524888A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thin film
- halide
- reactant
- reaction space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 description 65
- 239000010410 layer Substances 0.000 description 32
- 239000010409 thin film Substances 0.000 description 22
- 239000000376 reactant Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 16
- 150000004820 halides Chemical class 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 238000005247 gettering Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 transition metal nitride Chemical class 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000005234 alkyl aluminium group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17579999P | 1999-10-15 | 1999-10-15 | |
| FI992234A FI117944B (fi) | 1999-10-15 | 1999-10-15 | Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
| FI992233A FI118158B (sv) | 1999-10-15 | 1999-10-15 | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
| FI19992235 | 1999-10-15 | ||
| FI19992233 | 1999-10-15 | ||
| FI19992234 | 1999-10-15 | ||
| US60/175,799 | 1999-10-15 | ||
| FI992235A FI117943B (fi) | 1999-10-15 | 1999-10-15 | Menetelmä alkuaineohutkalvojen kasvattamiseksi |
| US17694800P | 2000-01-18 | 2000-01-18 | |
| US60/176,948 | 2000-01-18 | ||
| FI20000564A FI119941B (fi) | 1999-10-15 | 2000-03-10 | Menetelmä nanolaminaattien valmistamiseksi |
| FI20000564 | 2000-03-10 | ||
| PCT/US2000/028654 WO2001029893A1 (en) | 1999-10-15 | 2000-10-16 | Method for depositing nanolaminate thin films on sensitive surfaces |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003524888A JP2003524888A (ja) | 2003-08-19 |
| JP2003524888A5 true JP2003524888A5 (enExample) | 2007-12-27 |
| JP4746234B2 JP4746234B2 (ja) | 2011-08-10 |
Family
ID=44541511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001531142A Expired - Lifetime JP4746234B2 (ja) | 1999-10-15 | 2000-10-16 | 感受性表面上にナノラミネート薄膜を堆積するための方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4746234B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004059668B3 (de) | 2004-12-10 | 2006-07-13 | Infineon Technologies Ag | Halbleitertechnologieverfahren zur Herstellung einer leitfähigen Schicht |
| DE102005023122A1 (de) | 2005-05-19 | 2006-11-23 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Schichtstapel und Verfahren |
| JP5864503B2 (ja) * | 2013-09-30 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6788393B2 (ja) * | 2016-06-29 | 2020-11-25 | 東京エレクトロン株式会社 | 銅膜を形成する方法 |
| KR102376835B1 (ko) * | 2017-09-25 | 2022-03-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| WO2020175314A1 (ja) * | 2019-02-28 | 2020-09-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| KR102660213B1 (ko) * | 2019-03-06 | 2024-04-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 프로그램, 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1012724A (ja) * | 1996-06-19 | 1998-01-16 | Sony Corp | 配線接続部およびその製造方法 |
| US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
| JPH1074709A (ja) * | 1996-08-29 | 1998-03-17 | Nec Corp | 半導体装置とその製造方法 |
| JPH1079481A (ja) * | 1996-09-05 | 1998-03-24 | Mitsubishi Electric Corp | 導電層接続構造およびその製造方法 |
| JP4097747B2 (ja) * | 1997-08-07 | 2008-06-11 | 株式会社アルバック | バリア膜形成方法 |
-
2000
- 2000-10-16 JP JP2001531142A patent/JP4746234B2/ja not_active Expired - Lifetime
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