WO2020175314A1 - 半導体装置の製造方法、基板処理装置及びプログラム - Google Patents
半導体装置の製造方法、基板処理装置及びプログラム Download PDFInfo
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- WO2020175314A1 WO2020175314A1 PCT/JP2020/006791 JP2020006791W WO2020175314A1 WO 2020175314 A1 WO2020175314 A1 WO 2020175314A1 JP 2020006791 W JP2020006791 W JP 2020006791W WO 2020175314 A1 WO2020175314 A1 WO 2020175314A1
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- Prior art keywords
- gas
- supply
- pressure
- processing
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000007789 gas Substances 0.000 claims abstract description 316
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000011261 inert gas Substances 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 9
- 150000002367 halogens Chemical class 0.000 claims abstract description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 230000001965 increasing effect Effects 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 53
- 238000010586 diagram Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- 239000006227 byproduct Substances 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 239000003779 heat-resistant material Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- KPFWGLUVXPQOHO-UHFFFAOYSA-N trichloro(silyl)silane Chemical compound [SiH3][Si](Cl)(Cl)Cl KPFWGLUVXPQOHO-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 125000002346 iodo group Chemical group I* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 241001556567 Acanthamoeba polyphaga mimivirus Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 108700021154 Metallothionein 3 Proteins 0.000 description 1
- 102100028708 Metallothionein-3 Human genes 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JYIFRKSFEGQVTG-UHFFFAOYSA-J tetrachlorotantalum Chemical compound Cl[Ta](Cl)(Cl)Cl JYIFRKSFEGQVTG-UHFFFAOYSA-J 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
Definitions
- the present disclosure relates to a semiconductor device manufacturing method, a substrate processing apparatus, and a program.
- a tungsten (10) film is used for the control gate of an 80-type flash memory having a three-dimensional structure, and tungsten hexafluoride ( ⁇ ZV F 6 ) gas containing is used for forming this film. It is used.
- a titanium nitride (chome 1 ⁇ 1) film may be provided as a barrier film between this film and the insulating film. This one! The ⁇ 1 film not only plays the role of increasing the adhesion between the film and the insulating film, but also prevents the fluorine () contained in the film from diffusing into the insulating film.
- ⁇ ⁇ 4 Gas and ammonia It is generally performed using a gas (for example, see Patent Documents 1 and 2).
- Patent Document 1 Japanese Patent Laid-Open No. 2 0 1 1-6 7 8 3
- Patent Document 2 Japanese Patent Laid-Open No. 20 15-2 0 7 5 9 1
- the present disclosure provides a technique capable of forming a low resistance film.
- a first process having a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen to a substrate in the processing chamber in parallel with the supply of the metal-containing gas.
- a film having low resistance can be formed.
- FIG. 1 A vertical cross-sectional view schematically showing a vertical processing furnace of a substrate processing apparatus.
- Fig. 2 is a schematic cross-sectional view taken along line 8-18 in Fig. 1.
- FIG. 3 is a schematic configuration diagram of a controller of the substrate processing apparatus, which is a block diagram of a control system of the controller.
- FIG. 4 is a diagram showing a substrate processing flow in the present disclosure.
- FIG. 5 A diagram showing a gas supply sequence.
- FIG. 6 is a diagram showing a gas supply sequence.
- FIG. 7 is a diagram showing a gas supply sequence.
- FIG. 8 is a diagram showing an inert gas flow rate ratio in the second step.
- FIG. 9 is a diagram showing a gas supply sequence.
- FIG. 10 is a diagram showing a gas supply sequence.
- FIG. 11 A diagram showing a gas supply sequence.
- FIG. 12 is a diagram showing a gas supply sequence.
- Fig. 13 is a diagram showing an example of an experimental result.
- the substrate processing apparatus 10 includes a processing furnace 20 2 provided with a heater 20 7 as a heating means (heating mechanism, heating system).
- the heater 207 has a cylindrical shape and ⁇ 02020/175314 3 ⁇ (: 171?2020/006791
- an outer tube 203 that constitutes a reaction container (processing container) concentrically with the heater 207 is arranged.
- the outer tube 203 is made of a heat-resistant material such as quartz (3 0 2 ) and silicon carbide (3 0 2 ).
- the shape of the outer tube 203 is a cylinder with the upper end closed and the lower end open.
- a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203.
- the manifold 209 is It is made of metallic material such as stainless steel (311 3) etc.
- the shape of the manifold 209 is formed in a cylindrical shape with the upper and lower ends opened.
- the upper end of the manifold 209 and the outer tube 209 A ring 2203 as a seal member is provided between the outer tube 20 and the outer tube 20.
- the outer tube 203 is installed vertically because the manifold 210 is supported by the heater base. Become.
- the inner tube 204 is made of a heat-resistant material such as quartz (3 0 2 ) or silicon carbide (3 0 2 ).
- the shape of the inner tube 20 4 is a cylinder with a closed upper end and an open lower end.
- the outer tube 203, the inner tube 204, and the manifold 209 mainly form a processing container (reaction container).
- a processing chamber 201 is formed inside the tube 204).
- the processing chamber 20 1 is configured to be able to accommodate wafers 20 0 as substrates in a state in which the wafer 2 0 0 is arranged in a horizontal posture and is vertically arranged in multiple stages by a boat 2 17 described later.
- nozzles 41 0, 4 20 and 4 30 are installed in the manifold 20.
- Gas supply pipes 3 1 0, 3 2 0 and 3 3 0 are connected to the nozzles 4 1 0, 4 2 0 and 4 30 respectively.
- the processing furnace 202 of the present embodiment has the above-described configuration. ⁇ 02020/175314 4 ⁇ (: 171?2020/006791
- the gas supply pipes 310, 320, 330 are provided with mass flow controllers (IV! ⁇ ) 3 12, 322, 332, respectively, which are flow controllers (flow control units) in order from the upstream side. Further, the gas supply pipes 310, 320, 330 are provided with valves 3 14, 4, 324, 334, which are on-off valves, respectively. Gas supply pipes 51, 520, 530 for supplying an inert gas are connected to the gas supply pipes 310, 320, 330 downstream of the valves 3 14, 324, 334, respectively.
- Nozzles 41, 420, 420 are provided at the tips of the gas supply pipes 310, 320, 330.
- Nozzles 41, 420, 430 are connected to each other. Nozzles 41, 420, 430 are
- nozzle It is configured as a !_ shaped nozzle, the horizontal part of which is provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
- the vertical portion of the nozzles 410, 420, 430 is arranged so as to project outward in the radial direction of the inner tube 204 and is formed in a channel-shaped (groove-shaped) preliminary chamber that is formed so as to extend in the vertical direction. It is provided inside 201 3 and is provided upward (along the way of arranging the wafers 200) along the inner wall of the inner tube 204 in the preliminary chamber 2018.
- the nozzles 41 0, 420, and 430 are installed in the process chamber 2 from the lower region of the process chamber 201.
- the wafer 200 facing each of the plurality of gas supply holes 4 1 03 to the position you, 3, 4303 has been found provided 42_Rei.
- the processing gas is supplied to the wafer 200 from the gas supply holes 4103, 4203, 4303 of the nozzles 410, 420, 430, respectively.
- This gas supply hole A plurality of 4203 and 4303 are provided from the lower part to the upper part of the inner tube 204, have the same opening area, and are provided with the same open pitch.
- gas supply hole 414 Four
- the opening area may be gradually increased from the bottom to the top of 04. As a result, the gas supply hole It is possible to make the flow rates of the gases supplied from 4203 and 4303 more uniform.
- a plurality of boats 3 are provided at a height from the bottom to the top of the boat 211, which will be described later. Therefore, the processing gas supplied from the gas supply holes 4 103, 4203, 4303 of the nozzles 410, 420, 430 into the processing chamber 201 is the same as the wafers 200 stored in the boat 2 17 from the bottom to the top. It is supplied to the whole area.
- the nozzles 41, 420, 430 may be provided so as to extend from the lower region of the processing chamber 201 to the upper region thereof, but are provided so as to extend to the vicinity of the ceiling of the boat 2 17. Is preferred.
- a raw material gas containing a metal element (a metal-containing gas) was treated as a processing gas through 1 ⁇ /1 ⁇ 312, a valve 314, and a nozzle 411. Is supplied to the processing chamber 201.
- a raw material for example, titanium tetrachloride (Cho No. 4 ) is used as a halogen-based raw material (halide, halogen-based titanium raw material) containing titanium (Cho) as a metal element.
- a reducing gas is supplied as a processing gas into the processing chamber 201 via 1 ⁇ /100 322, a valve 324, and a nozzle 420.
- the reducing gas it is possible to use, for example, silane (3 1 to 1 4 ) gas as a reducing gas containing silicon (3 1) and hydrogen (1 to 1) and containing no halogen. 3 1 to 1 4 act as reducing agents.
- a reaction gas as a processing gas is supplied into the processing chamber 201 through the IV! ⁇ 332, the valve 334, and the nozzle 430.
- the reaction gas for example, nitrogen (1 ⁇ ! containing gas containing 1 ⁇ ) and ammonia (1 ⁇ 1! 3 ) gas can be used.
- N 2 gas As the inert gas, other than N 2 gas, for example, argon (80 gas, helium) can be used. Gas, neon Rare gas such as gas or xenon (6) gas may be used.
- the process gas supply unit is composed of the valves 31 4, 324, 334 and the nozzles 41 0, 420, 430, but only the nozzles 41 0, 420, 430 may be considered as the process gas supply unit.
- the processing gas supply unit may be simply referred to as a gas supply unit.
- the raw gas supply part is mainly composed of the gas supply pipes 3 10 and 1 ⁇ /1 ⁇ 3 12 and the valve 3 1 4, but the nozzle 4 1 It may be considered that 0 is included in the raw material gas supply unit.
- the reducing gas supply unit is mainly configured by the gas supply pipe 320, IV!
- the reaction gas supply part is mainly composed of the gas supply pipe 330, 1 ⁇ /103 332, and the valve 334. You may think.
- the reaction gas supply unit may be referred to as the nitrogen-containing gas supply unit.
- the gas supply pipes 510, 520, 530, 1 ⁇ / ⁇ ⁇ 5 1 2, 522, 532 and the valves 5 14, 524, 534 mainly constitute an inert gas supply unit.
- the gas supply method according to the present embodiment is performed by a nozzle arranged in a preliminary chamber 2013 in a vertically elongated annular space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200.
- the gas is transported via 4 10, 420 and 430.
- a plurality of gas supply holes provided at positions facing the wafer of the nozzles 410, 420, 430. 42_Rei 3, 4303 and is ejected to gas In'nachi cube 204 from. More specifically, the gas supply hole 4103 of the nozzle 411, the gas supply hole 4203 of the nozzle 420 and the gas supply hole 4303 of the nozzle 430 are used to feed the raw material in a direction parallel to the surface of the wafer 200. Ejecting gas etc.
- the exhaust hole (exhaust port) 204a is a through hole formed in the side wall of the inner tube 204 and facing the nozzles 410, 420, 430.
- the exhaust hole 204a is elongated in the vertical direction. It is a slit-shaped through hole that has been opened.
- the gas supplied from the gas supply holes 41 0 a, 420 a, 430 a of the nozzles 41 0, 420, 430 into the processing chamber 201 and flowing on the surface of the wafer 200 is exhausted through the exhaust holes 204 a. It flows into an exhaust passage 206 formed by a gap formed between the inner tube 204 and the outer tube 203. Then, the gas flowing into the exhaust passage 206 flows into the exhaust pipe 231 and is discharged to the outside of the processing furnace 202.
- the exhaust holes 204a are provided at positions facing the side surfaces of the plurality of wafers 200, and the vicinity of the wafer 200 in the processing chamber 201 from the gas supply holes 41Oa, 420a, and 430a.
- the gas supplied to the exhaust gas flows in the horizontal direction and then into the exhaust passage 206 through the exhaust hole 204a.
- the exhaust hole 204a is not limited to being formed as a slit-shaped through hole, but may be formed of a plurality of holes.
- the manifold 209 includes an exhaust pipe 23 for exhausting the atmosphere in the processing chamber 201.
- the exhaust pipe 23 1 has, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, and an APC (Auto Pressure Coup) as exhaust gas/lube. ntrol I er)
- a valve 243 and a vacuum pump 246 as a vacuum exhaust device are connected.
- the APC valve 243 can be used to evacuate and stop the evacuation of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating, and the state where the vacuum pump 246 is operating.
- the pressure inside the processing chamber 201 can be adjusted by adjusting the valve conductance by adjusting the exhaust conductance.
- An exhaust portion is mainly configured by the exhaust hole 204a, the exhaust passage 206, the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. At least the exhaust port 204a may be considered as the exhaust section.
- the vacuum pump 246 may be included in the exhaust unit. ⁇ 02020/175314 8 ⁇ (: 171?2020/006791
- a seal cap 219 as a furnace port lid that can hermetically close the lower end opening of the manifold 209 is provided below the manifold 209.
- the seal cap 219 is configured to come into contact with the lower end of the manifold 209 from below in the vertical direction.
- the seal cap 2 19 is made of a metal material such as 3 11 3.
- the shape of the seal cap 219 is disk-shaped.
- On the upper surface of the seal cap 219 there is provided a ring 220 which serves as a seal member that comes into contact with the lower end of the manifold 209.
- a rotating mechanism 2 6 7 On the opposite side of the processing chamber 20 1 in the seal cap 2 19 is installed a rotating mechanism 2 6 7 for rotating a bow 2 17 containing the wafer 2 0 0.
- the rotating shaft 2 55 of the rotating mechanism 2 6 7 passes through the seal cap 2 19 and is connected to the boat 2 17.
- the rotation mechanism 267 is configured to rotate the wafer 2100 by rotating the boat 217.
- the seal cap 219 is configured to be vertically moved up and down by a boat elevator 1 15 as an elevating mechanism which is vertically installed outside the outer tube 203.
- the boat elevator 1 115 is configured so that the boat 2 17 can be carried in and out of the processing chamber 20 1 by moving the seal cap 2 19 up and down.
- the boat reveer 1 15 is configured as a transfer device (transfer mechanism) that transfers the boat 2 17 and the wafer 2 0 0 stored in the boat 2 1 7 into and out of the processing chamber 2 0 1. There is.
- the boat 211 serving as a substrate support is provided with a plurality of wafers, for example, 1 to 200 wafers 200, in a horizontal posture and vertically aligned with their centers aligned with each other. It is configured so that it can be vacated and arranged.
- the boat 2 17 is made of a heat resistant material such as quartz or 3 I ⁇ 3.
- a heat insulating plate 218, which is made of a heat-resistant material such as quartz or 3 ⁇ 3, is supported in a horizontal position in multiple stages (not shown) at the bottom of the boat 217. With this configuration, the heat from the heater 207 is less likely to be transferred to the seal cap 219 side.
- the present embodiment is not limited to the above-mentioned form.
- the heat insulating material configured as a tubular member made of a heat-resistant material such as quartz or 3 ⁇ 3 A cylinder may be provided.
- a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and the amount of electricity supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263. By doing so, the temperature inside the processing chamber 201 is configured to have a desired temperature distribution. Like the nozzles 410, 420 and 430, the temperature sensor 263 is L-shaped and is provided along the inner wall of the inner tube 204.
- the controller 1 2 which is the control unit (control means), is the control unit (control means).
- PU Central Processing Unit
- RAM Random Access Memory
- storage device 1 2 1 c I/ ⁇ Port 1 2 1 d Is configured as.
- RAM 1 2 1 b, storage device 1 2 1 c, I/O port 1 2 1 d are configured to exchange data with CPU 1 2 1 a via an internal bus.
- An input/output device 1 2 2 configured as, for example, a touch panel is connected to the controller 1 2 1.
- the storage device 1 21 1 c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedures and conditions of the semiconductor device manufacturing method described below, and the like are stored in the memory device 1 2 1 c in a readable manner. There is.
- the process recipe is a combination that causes the controller 1 21 to execute each step (each step) in the semiconductor device manufacturing method described later to obtain a predetermined result, and functions as a program.
- these process recipes, control programs, etc. are collectively referred to simply as programs.
- the RAM 1 2 1 unit is configured as a memory area (work area) in which programs and data read by the CPU 1 2 1 a are temporarily stored. ⁇ 02020/175314 10 box (: 171?2020/006791
- I / ⁇ Port 1 2 1 is the above IV! ⁇ 3 1 2, 322, 332, 5 1 2 ,522, 532, valve 3 1 4, 324, 334, 5 1 4, 524, 53 4 , Pressure sensor 245, 80 valve 243, vacuum pump 246, heater 2007, temperature sensor 263, rotating mechanism 267, boat elevator 1 15 etc. are controllably connected.
- the connection also includes being directly electrically connected, being indirectly connected, and being capable of directly or indirectly transmitting and receiving an electric signal.
- 1 2 1 3 reads the control program from the storage device 1 2 1 0 and executes it, and also stores the storage device 1 2 1 0 1 according to the input of the operation command from the input/output device 122. It is configured to read a recipe and the like from. 09 ⁇ ⁇ 2] 3 adjusts the flow rate of various gases by 1 ⁇ / ⁇ ⁇ 3 1 2, 322, 33 2, 5 1 2, 522, 532, valve 3 1 according to the contents of the read recipe.
- Opening/closing operation of 4, 324, 334, 5 1 4, 524, 534, 80 Opening/closing operation of valve 24 3 and 8 Pressure adjustment operation based on pressure sensor 245 by 3 valve 243, temperature of heater 207 based on temperature sensor 263 Adjustment operation, start and stop of vacuum pump 246, rotation of boat 2 17 by rotating mechanism 267 and adjustment of rotation speed, raising and lowering of boat 2 17 by boat elevator 1 15 and movement to boat 2 17 It is configured to control the accommodation operation and the like of the wafers 200.
- the controller 1 21 is an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as XX or XX, a magneto-optical disk such as IV! It can be configured by installing the above program stored in a semiconductor memory such as a memory or a memory card) 123 into a computer.
- the storage device 1 2 1 0 and the external storage device 12 3 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- the recording medium may include only the storage device 1 2 1 0 alone, may include only the external storage device 12 3 alone, or may include both of them.
- the information may be provided by using communication means such as the Internet or a dedicated line without using the external storage device 123.
- step of manufacturing a semiconductor device an example of a step of forming a metal film forming a gate electrode on a wafer 200 will be described with reference to FIG.
- the step of forming the metal film is executed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part of the substrate processing apparatus 10 is controlled by the controller 1 21.
- wafer When the word “wafer” is used in the present disclosure, it means “a wafer itself” or “a laminate of a wafer and a predetermined layer or film formed on the surface thereof”. There are cases.
- wafer surface when the term “wafer surface” is used, it may mean “the surface of the wafer itself” or “the surface of a predetermined layer or film formed on the wafer”. is there.
- substrate is also synonymous with the term “wafer”.
- a 1 ⁇ 1 film that does not include 3 ⁇ atoms refers to a case where the ⁇ 1 ⁇ 1 film does not include 3 ⁇ atoms at all, and includes almost 3 ⁇ atoms.
- the content of 3 I in the film is extremely low, such as when it does not contain 3 I atoms or when it does not substantially contain 3 I atoms.
- the content of 3 I in the film is 1
- FIGS. 4 to 12 The horizontal axes of Figures 5 to 8 and 9 to 12 represent time, and the vertical axes represent the gas supply amount, valve opening, and pressure, respectively.
- the supply amount, valve opening, and pressure are in arbitrary units.
- a vacuum pump 246 evacuates the processing chamber 201 to a desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 remains in operation at least until the processing of the wafers 200 is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating of the inside of the processing chamber 201 by the heater 207 is continuously performed at least until the processing of the wafers 200 is completed.
- the valve 3 14 Open the valve 3 14 and let the raw material gas T i C 4 gas flow into the gas supply pipe 3 10.
- the flow rate of the T i C 4 gas is adjusted by the MFC 3 12, is supplied into the processing chamber 201 through the gas supply hole 4 10 a of the nozzle 4 10 and is exhausted through the exhaust pipe 23 1.
- T i C 4 gas is supplied to the wafer 200.
- the valve 5 14 is opened to flow an inert gas such as N 2 gas into the gas supply pipe 5 10.
- the flow rate of the N 2 gas flowing through the gas supply pipe 5 10 is adjusted by the MFC 5 12 and supplied into the processing chamber 201 together with the Ti CI 4 gas, and exhausted from the exhaust pipe 23 1.
- the valves 524 and 534 are opened and the gas supply pipes 520 and 520,
- the N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 320 and 330 and the nozzles 420 and 430, and is exhausted from the exhaust pipe 231.
- the APC valve 243 is adjusted to adjust the pressure in the processing chamber 201, for example. ⁇ 02020/175314 13 ⁇ (: 171?2020/006791
- the pressure should be within the range of 1 to 399. IV! ⁇ Controlled by ⁇ 3 12 ⁇
- the flow rate of I 4 gas supplied shall be, for example, within the range of ⁇ 0.1 to 2.0 3 I 01. 1 supply rate of ⁇ / ⁇ Rei_5 1 2, 5 2 2, 5 3 1 ⁇ 1 2 gas controlled 2, it is assumed that the flow rate in the range of ⁇ . 1-2 0 3 ⁇ In each example.
- the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 2,000 becomes, for example, within the range of 300 to 600°.
- gas flows into the process chamber 2 0 1 is Ru Ding ⁇ 4 gas and 1 ⁇ 1 2 Gasudea.
- the supply of Ding ⁇ 4 gas, Ding ⁇ organic layer is formed on the wafer 2 0 0 (base film surface).
- the glove-containing layer may be a gem-containing layer, a gem
- Ding ⁇ 4 gas and 1 ⁇ 1 2 times only gas is supplied, a 1 hour predetermined Ding.
- Ding ⁇ 4 gas supply start from a predetermined time (T1s) even after lapse of example 0.0 1
- T1s a predetermined time
- the reducing gas der the gas supply pipe 3 2 in 0 3 1 ⁇ 1 4 Flow gas.
- 3 1 ⁇ 1 4 Gas flow rate is adjusted by 1 ⁇ /1 ⁇ 3 2 2 and is supplied into the processing chamber 2 0 1 from the gas supply hole 4 2 0 3 of the nozzle 4 2 0 and exhaust pipe 2 3 1 Exhausted from.
- opening the valve 5 2 4 flow of an inert gas such as 1 ⁇ 1 2 gas to the gas supply pipe 5 2 within 0.
- the flow rate of 1 ⁇ 1 2 gas flowing in the gas supply pipe 5 20 is adjusted by 1 ⁇ / 1 0 5 2 2 and supplied into the processing chamber 20 1 together with 3 1 ⁇ 1 4 gas, It is exhausted from the exhaust pipe 2 3 1.
- opening the valve 5 3 4 1 ⁇ 1 to the gas supply pipe 5 3 in 0 2 Flow the gas.
- the 1 ⁇ 1 2 gas is supplied into the processing chamber 20 1 via the gas supply pipe 3 30 and the nozzle 4 30 and exhausted from the exhaust pipe 2 3 1. In this case, so that the signature ⁇ 4 gas and 3 ⁇ 1-1 4 gas and 1 ⁇ 1 2 gas to the wafer 2 0 0 are simultaneously supplied.
- the valve 243 is adjusted to adjust the pressure in the processing chamber 201 to a pressure within the range of, for example, 130 to 3990 3, preferably 500 to 2660 3, and more preferably 600 to 1 500 3.
- the pressure in the processing chamber 201 is lower than 1 30 3, 3 1 contained in the gas from 1 to 1 4 gas will enter into the glove containing layer and the film formed in the gage 1 ⁇ ! There is a possibility that the content ratio of 3 will increase to become a 3:1 1 ⁇ 1 film.
- the pressure inside the processing chamber 201 is higher than 3990 3, 3 1 contained in 3 1 to 1 4 gas enters into the glove containing layer and is included in the gallium 1 ⁇ ! film formed.
- the flow rate is more preferably within the range of 0.5 to 23 I. IV! ⁇ 5 1 2, 522, 1 ⁇ 1 2 flow rate of gas to be controlled at 532 are each for example ⁇ . 01-203 ⁇
- the flow rate is preferably in the range of 0.1 to 103 cc 01, and more preferably in the range of 0.1 to 13 cc 01.
- the temperature of the heater 207 is set to the same temperature as in the step 4 Gas supply step.
- the period during which the second processing is performed is also called the second timing.
- the gas supply pipe 5 1 0, 530 a gas supply pipe 3 1 0, 330, to continue the supply of the nozzle 4 1 0, 43 1 ⁇ 1 2 gas 0 to the processing chamber 201 through the. As a result, it is possible to suppress the invasion of 3 1 to 1 4 gas from the processing chamber 201 into the nozzles 4 10 and 430.
- 3 A I 1 ⁇ 1 4 elapses after starting the supply of gas a predetermined time, for example 0.0 1 to 60 seconds after, preferably ⁇ . 1 after 30 seconds, more preferably 1 to 20 seconds to close the valve 324 to stop the supply of 3 ⁇ 1 to 1 4 gas. That is, the time for supplying the 3 gas 1 to 14 gas to the wafer 200 is, for example, within the range of 0.01 to 60 seconds, preferably 0.1 to 30 seconds, and more preferably 1 to 20 seconds. Time 3 ⁇ 1 to 1 when the 4 gas you shorter than ⁇ . 01 seconds the time for supplying the wafer 200 is the growth inhibitory factor There is a possibility that the remaining Ding I containing layer not reduced by sufficiently 3 ⁇ 1 to 1 4 gas.
- the supply time of 3 to 1 to 4 is set to be longer than the supply time of 0 to 4 .
- the supply time (32) of 3 to 1 to 4 gas after stopping the supply of 4 x 4 gas is set equal to or more than 31. That is, Have a relationship. With this structure, it is possible to reduce the ⁇ 3 I component in the gallium-containing layer and enhance the effect of removing 1 to 1 (3 I in the processing chamber 201.
- the pressure 32 in the processing chamber 201 at this time is 3 (1 to 1 4) so that it becomes equal to the pressure 3 1 at the time of gas supply (8 valve opening of 3 valves 243, 1 Either or both of the flow rates of 1, 2, 522, and 532 are controlled, and the pressure 32 is set to, for example, 1 x 0 "" ⁇ 20 x 0 "", specifically 10 x In this way, the pressure 32 in the processing chamber 201 is reduced to 3 I
- the period during which the third processing is performed is also called the third timing.
- the pressure ratio of is influenced by the size of each part of the substrate processing apparatus 10, the number of wafers 200, the surface area of the wafers 200, and the like.
- the dimensions of each part of the substrate processing apparatus 10 are, for example, the volume of the processing chamber 201, the length of nozzles 410, 420, 430, the length of gas supply pipes 310, 320, 330, the exhaust pipe 23. There are 1 volume, (3 valve 243 position and diameter, etc.).
- the pressure of 32 is controlled by either or both of the flow rates of IV! ⁇ 5 1 2, 522, and 532 and the valve opening of 80 243 valves. ⁇ 02020/175314 17 ⁇ (: 171?2020/006791
- Figure 6 shows a gas supply sequence that raises the pressure of 9 a 2 above 3 1. As shown in FIG. 6, if raising the 32 pressure is preferably increased 1 ⁇ 1 2 gas flow rate as the inert gas. With such a configuration, it is possible to flush the gas molecules containing three gases and the by-product molecules existing in the processing chamber 201 with the inert gas molecules, and to enhance the discharge efficiency.
- Figure 7 shows a gas supply sequence that lowers the pressure at 9 a 2 below the pressure at 31.
- FIG. 7 when lowering the pressure of 32, it is preferable to increase the valve opening of the 80 valve 243. With such a configuration, it is possible to increase the exhaust speed, and it is possible to enhance the exhaust efficiency of the 3 M-containing gas molecules and the by-product molecules existing in the processing chamber 201.
- a flow rate of 1 ⁇ 1 2 gas as the nozzle 4 1 0, 420, inert gas supplied to 430 is controlled by the 1 ⁇ / ⁇ Rei_5 1 2, 522, 532.
- 1 ⁇ 1 2 gas flow rate supplied to each Nozzle 4 1 0, 420, 430 may be controlled to evenly ing, preferably, as shown in FIG. 8, 3 ⁇ 1 the ⁇ 1 4 gas was subjected supply, a flow rate of 1 ⁇ 1 2 gas supplied to the nozzle 420, constituting more than the flow rate of 1 ⁇ 1 2 gas supplied to the other nozzles 4 1 0, 430 ..
- 1 ⁇ 1 2 gas flow rate increase process as an inert gas. 5 to 7, 3 ⁇ 1-1 4 gas supply stopping and simultaneously, 1 ⁇ 1 2 has been described processing to increase the gas flow rate is not limited thereto, such as in FIG. 9 and FIG. 1 0
- a gas supply sequence may be configured. For example, as shown in Fig. 9, before stopping the supply of 3 1 ⁇ 1 4 gas ⁇ 02020/175314 18 ⁇ (: 171?2020/006791
- the time I 1 for supplying the inert gas and maintaining the pressure 32 is set to be at least 3 1 to 1 4 after the supply of 70 4 is stopped and the supply time 3 2 or more. As shown in Fig. 11, 1> 3 2 may be configured. With such a configuration, the concentration of 3 1 to 1 4 gas and by-products in the processing chamber 201 can be reduced. It should be noted that I 1 may be configured to have a time I 2 equivalent to that of the subsequent purge step 3306. I 1 £? I 2 relationship. Although it may be configured more than this, the time for the entire film forming process 330 becomes long and affects the manufacturing throughput of the semiconductor manufacturing apparatus, and thus the relationship is set.
- FIG. 1 2 With an increasing flow rate of 1 ⁇ 1 2 gas as the inert gas equivalent to the pressure 3 2 and the pressure 3 1, after maintaining a predetermined time, reducing the inert gas flow rate, A vacuum evacuation process for lowering the internal pressure of the processing chamber 201 may be provided.
- this step it is possible to reduce the amount of gas from 3 to 1-4 gas and the amount of by-products at the start of the next 3305 step, and to generate in the next 3305 step. the generation amount of ammonium chloride (1 ⁇ 1 1 to 1 4 ⁇ ) of the by-products can be reduced.
- the flow rate of the inert gas may be the same as in the 3303 step or the next 3305 step. With this configuration, it becomes possible to suppress the pressure fluctuation in the next step 335. ⁇ 02020/175314 19 ⁇ (:171?2020/006791
- the valve 334 is opened, and 1 ⁇ 11 to 1 3 gas is flown into the gas supply pipe 330 as a reaction gas.
- the flow rate of the gas is adjusted by 1 ⁇ / ⁇ 332.
- the gas is supplied from the gas supply hole 4303 of the nozzle 430 into the processing chamber 201, and is exhausted from the exhaust pipe 23 1.
- a 1 ⁇ (-! 3 gas is supplied.
- opening the valve 534 flow 1 ⁇ 1 2 gas to the gas supply pipe 530.
- Gas supply pipe 530 The flow rate of the 1 ⁇ 1 2 gas that has flown is adjusted by the IV! ⁇ 532.
- the 1 ⁇ 1 2 gas is supplied into the processing chamber 20 1 together with the 1 ⁇ 11 ⁇ 1 3 gas, and is exhausted from the exhaust pipe 23 1.
- the nozzle 4 1 0,
- the eighty valve 243 is adjusted to adjust the pressure in the processing chamber 201, for example.
- the supply flow rate of gas is, for example, 0.1 to 303 ⁇
- the flow rate should be within the range. 1 ⁇ /1 ⁇
- the flow rate should be within the range. 1 ⁇ 11-1 3 time for supplying the gas to the wafer 200 is, for example, ⁇ . Time in the range of 01 to 30 seconds. At this time, the temperature of the heater 207 is set to the same temperature as in the J ⁇ 0 ⁇ 4 gas supply step.
- gas flowing into the process chamber 201 is a 1 ⁇ 11-1 3 gas and 1 ⁇ 1 2 gas.
- the gas undergoes a substitution reaction with at least a portion of the glove-containing layer formed on the wafer 200 in the first step 3303.
- the gallium contained in the gallium-containing layer and the one gallium 1 ⁇ 1 to 1 3 contained in the gas are combined, and the gallium and the gallium on the wafer 200 are substantially included in the gallium. Is not included! ⁇ 1 layer is formed.
- the processing chamber 1 20 after contributing to the formation of unreacted or Ding ⁇ 1 ⁇ ! Layer remaining inside 1 ⁇ 11-1 3 gas or reaction byproduct Exclude the product from the processing room 20 1.
- the valve opening degree of the eight (third valve 243, the a substantially fully open (approximately 1 hundred%), the total flow rate of 1 ⁇ 1 2 gas, 1 3 I ⁇ 1 003
- each IV! ⁇ and 80 valve 243 are controlled so that 603 is 1 803.
- the pressure 34 here is sufficiently lower than the pressure 32 described above and the pressure 33 of the third step 3305,
- first step 3303 to fourth step 3306 are sequentially performed until a predetermined film thickness is formed. If the predetermined number of times has not been performed, the first step 3303 to the fourth step 3306 are repeatedly performed, and if the predetermined number of times has been performed, the next atmosphere adjusting step 3308 is performed.
- the predetermined number of times is a check, and n is 1 or more.
- a film having a predetermined thickness is formed on the wafer 200.
- the above cycle is preferably repeated multiple times.
- a T i 1 ⁇ 1 film with a thickness of 0.5 to 5.0 nm is formed.
- 1 ⁇ 1 2 gas is supplied into the process chamber 20 1 from each of the gas supply pipes 5 1 0, 520, and 530, and exhausted from the exhaust pipe 23 1.
- the 1 ⁇ 1 2 gas acts as a purge gas, so that the inside of the processing chamber 20 1 is purged with an inert gas, and the gas and byproducts remaining in the processing chamber 20 1 are removed from the inside of the processing chamber 20 1 ( After purge). After that, the atmosphere in the processing chamber 20 1 is replaced with an inert gas (replacement with an inert gas), and the pressure in the processing chamber 20 1 is returned to normal pressure (return to atmospheric pressure).
- the boat cap 1 15 lowers the seal cap 2 19 to open the lower end of the reaction tube 20 3.
- the processed wafer 200 is carried out from the lower end of the reaction tube 20 3 to the outside of the reaction tube 20 3 (boat unloading) while being supported by the bow 2 17 7.
- the processed wafer 200 is taken out from the bow 2 17 (wafer discharge).
- one or more of the following effects can be obtained. (3) It occurs during film formation and reduces the film formation rate. 1 to 1 (3 I can be efficiently discharged, and the film formation rate can be increased. ( ⁇ ) Reduce the concentration of 3 films in the film. ( ⁇ ) The resistivity can be lowered.
- Figure 13 shows an example of the experimental results.
- Figure 13 shows changes in the valve opening of the exhaust valve when increasing the flow rate of the inert gas and the time when increasing the flow rate of the inert gas in the second step 3304.
- the results are shown.
- Fig. 13 .. .. means that the exhaust valve is a reopened pen (fully opened), and 8 0 0 9 a s 1 0 0 0 3, This is the result when the exhaust valve opening is not fully open.
- the film resistivity can be reduced by increasing the pressure and the time when increasing the flow rate of the inert gas in the second step 3304. Becomes ( ⁇ 0 Improves oxidation resistance.
- ( ⁇ ) 3 1 to 1 4 in the processing chamber can be diluted with an inert gas and discharged from the processing chamber to the exhaust part, and the gas with high concentration of 3 1 to 1 4 can be instantaneously discharged to the exhaust part. Can be prevented from being discharged. Thus, it is possible to suppress unexpected 3 reaction ⁇ 1 to 1 4 in a subsequent stage of the vacuum pump.
- the raw material gas is Titanium ⁇ 4
- the present invention is not limited to this, and tungsten hexafluoride ( ⁇ ZV F 6 ) and tantalum tetrachloride (Titanium tetrachloride ⁇ 4), tungsten hexachloride ( ⁇ 6), five tungsten chloride ( ⁇ 5), tetrachloride mode Ribuden (1 ⁇ / 1_Rei_rei ⁇ 4), silicon tetrachloride (3 ⁇ 4), hexachloride Nisilicon (3 I 2 0 I 6 , hexachlorodisilane ) And other halogen-containing gases, preferably 0-containing gases and film species formed using them ⁇ 02020/175314 22 ⁇ (: 171?2020/006791
- tantalum (3) type it can do. Further, in addition to the tantalum (3) type, it can be applied to trichlorodisilane (3) and other 3 type gases and film types formed using them.
- 1 to 10 I was used as a by-product that is reduced using a reducing gas, but the present invention is not limited to this, and hydrogen fluoride (1 to 1) and hydrogen iodide (1 ⁇ 1 I), hydrogen bromide (1 ⁇ 1 M) and the like can also be applied.
- the present invention is not limited to this, and it is possible to supply the 4 gas and 1 ⁇ 1 1 to 1 3 gas at the time of supplying or to the 0 gas respectively. It is also applicable to the configuration in which the reducing gas is supplied after the supply of each of the 4 gases and 1 ⁇ 1 1 to 1 3 gas.
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CN202080007011.6A CN113227450A (zh) | 2019-02-28 | 2020-02-20 | 半导体器件的制造方法、衬底处理装置及程序 |
JP2021502135A JP7155390B2 (ja) | 2019-02-28 | 2020-02-20 | 基板処理方法、基板処理装置、プログラム及び半導体装置の製造方法 |
KR1020217027459A KR20210120073A (ko) | 2019-02-28 | 2020-02-20 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
US17/458,139 US20210388487A1 (en) | 2019-02-28 | 2021-08-26 | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
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CN114959639A (zh) * | 2021-02-19 | 2022-08-30 | 株式会社国际电气 | 基板处理方法、半导体装置的制造方法、基板处理装置和记录介质 |
JP2023023351A (ja) * | 2021-08-05 | 2023-02-16 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法 |
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US8486845B2 (en) * | 2005-03-21 | 2013-07-16 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
JP5774822B2 (ja) | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
JP6306411B2 (ja) | 2014-04-17 | 2018-04-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6523119B2 (ja) * | 2015-09-28 | 2019-05-29 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6560767B2 (ja) * | 2016-02-10 | 2019-08-14 | 株式会社Kokusai Electric | 基板処理装置、基板保持具及び半導体装置の製造方法 |
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JP2003524888A (ja) * | 1999-10-15 | 2003-08-19 | エーエスエム アメリカ インコーポレイテッド | 感受性表面上にナノラミネート薄膜を堆積するための方法 |
JP2013122068A (ja) * | 2011-12-09 | 2013-06-20 | Ulvac Japan Ltd | タングステン化合物膜の形成方法、及び半導体装置 |
JP2015067869A (ja) * | 2013-09-30 | 2015-04-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
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CN114959639A (zh) * | 2021-02-19 | 2022-08-30 | 株式会社国际电气 | 基板处理方法、半导体装置的制造方法、基板处理装置和记录介质 |
JP2022127250A (ja) * | 2021-02-19 | 2022-08-31 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラムおよび基板処理方法 |
JP7248722B2 (ja) | 2021-02-19 | 2023-03-29 | 株式会社Kokusai Electric | 基板処理方法、基板処理装置、プログラムおよび半導体装置の製造方法 |
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KR20210120073A (ko) | 2021-10-06 |
CN113227450A (zh) | 2021-08-06 |
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