TWI803510B - 用於銅互連件之晶種層 - Google Patents

用於銅互連件之晶種層 Download PDF

Info

Publication number
TWI803510B
TWI803510B TW107129279A TW107129279A TWI803510B TW I803510 B TWI803510 B TW I803510B TW 107129279 A TW107129279 A TW 107129279A TW 107129279 A TW107129279 A TW 107129279A TW I803510 B TWI803510 B TW I803510B
Authority
TW
Taiwan
Prior art keywords
layer
copper
ruthenium
substrate
processing chamber
Prior art date
Application number
TW107129279A
Other languages
English (en)
Chinese (zh)
Other versions
TW201920735A (zh
Inventor
吳智遠
萌區 蕭
美荷Ｂ 那克
本立 許
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201920735A publication Critical patent/TW201920735A/zh
Application granted granted Critical
Publication of TWI803510B publication Critical patent/TWI803510B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L2221/1089—Stacks of seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
TW107129279A 2017-08-22 2018-08-22 用於銅互連件之晶種層 TWI803510B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762548604P 2017-08-22 2017-08-22
US62/548,604 2017-08-22

Publications (2)

Publication Number Publication Date
TW201920735A TW201920735A (zh) 2019-06-01
TWI803510B true TWI803510B (zh) 2023-06-01

Family

ID=63350353

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107129279A TWI803510B (zh) 2017-08-22 2018-08-22 用於銅互連件之晶種層

Country Status (6)

Country Link
US (1) US10847463B2 (enExample)
EP (1) EP3447793B1 (enExample)
JP (2) JP7634930B2 (enExample)
KR (1) KR20190021184A (enExample)
CN (1) CN109461698B (enExample)
TW (1) TWI803510B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177162B2 (en) * 2019-09-17 2021-11-16 International Business Machines Corporation Trapezoidal interconnect at tight BEOL pitch
CN114664656A (zh) * 2020-05-22 2022-06-24 北京屹唐半导体科技股份有限公司 使用臭氧气体和氢自由基的工件加工
US11410881B2 (en) * 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride
US11764157B2 (en) * 2020-07-23 2023-09-19 Applied Materials, Inc. Ruthenium liner and cap for back-end-of-line applications
WO2025005521A1 (ko) * 2023-06-30 2025-01-02 주성엔지니어링(주) 전극 형성 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241321A1 (en) * 2002-06-04 2004-12-02 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US20060199372A1 (en) * 2005-03-01 2006-09-07 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20100200991A1 (en) * 2007-03-15 2010-08-12 Rohan Akolkar Dopant Enhanced Interconnect
US20130292806A1 (en) * 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20150262938A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier Structure for Copper Interconnect

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101790B2 (en) 2003-03-28 2006-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a robust copper interconnect by dilute metal doping
JP2006097044A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
JP2008098449A (ja) * 2006-10-12 2008-04-24 Ebara Corp 基板処理装置及び基板処理方法
US20080164613A1 (en) 2007-01-10 2008-07-10 International Business Machines Corporation ULTRA-THIN Cu ALLOY SEED FOR INTERCONNECT APPLICATION
US20080223287A1 (en) * 2007-03-15 2008-09-18 Lavoie Adrien R Plasma enhanced ALD process for copper alloy seed layers
US7659204B2 (en) * 2007-03-26 2010-02-09 Applied Materials, Inc. Oxidized barrier layer
US7737028B2 (en) 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
JP2009116952A (ja) * 2007-11-06 2009-05-28 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体およびこれを用いた磁気記憶装置
TW200951241A (en) 2008-05-30 2009-12-16 Sigma Aldrich Co Methods of forming ruthenium-containing films by atomic layer deposition
US7964497B2 (en) * 2008-06-27 2011-06-21 International Business Machines Corporation Structure to facilitate plating into high aspect ratio vias
US20090321935A1 (en) 2008-06-30 2009-12-31 O'brien Kevin Methods of forming improved electromigration resistant copper films and structures formed thereby
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
JP2010215982A (ja) 2009-03-18 2010-09-30 Tosoh Corp ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜
JP2012074608A (ja) * 2010-09-29 2012-04-12 Tokyo Electron Ltd 配線形成方法
CN102332426A (zh) * 2011-09-23 2012-01-25 复旦大学 一种用于纳米集成电路的铜扩散阻挡层的制备方法
US9142509B2 (en) * 2012-04-13 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Copper interconnect structure and method for forming the same
CN102903699A (zh) * 2012-10-15 2013-01-30 复旦大学 一种铜互连结构及其制备方法
US20140134351A1 (en) * 2012-11-09 2014-05-15 Applied Materials, Inc. Method to deposit cvd ruthenium
CN103266304B (zh) 2013-05-31 2015-12-23 江苏科技大学 一种高热稳定性无扩散阻挡层Cu(Ru)合金材料的制备方法
JP6278827B2 (ja) 2014-05-14 2018-02-14 株式会社Adeka 銅化合物、薄膜形成用原料及び薄膜の製造方法
US20160032455A1 (en) 2014-07-31 2016-02-04 Applied Materials, Inc. High through-put and low temperature ald copper deposition and integration
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10002834B2 (en) 2015-03-11 2018-06-19 Applied Materials, Inc. Method and apparatus for protecting metal interconnect from halogen based precursors
KR20160123793A (ko) * 2015-04-17 2016-10-26 포항공과대학교 산학협력단 이중층 구조를 가지는 저항변화메모리 및 이중층 구조를 가지는 저항변화메모리의 제조방법
CN105355620B (zh) * 2015-12-17 2018-06-22 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241321A1 (en) * 2002-06-04 2004-12-02 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US20060199372A1 (en) * 2005-03-01 2006-09-07 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20100200991A1 (en) * 2007-03-15 2010-08-12 Rohan Akolkar Dopant Enhanced Interconnect
US20130292806A1 (en) * 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20150262938A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier Structure for Copper Interconnect

Also Published As

Publication number Publication date
CN109461698A (zh) 2019-03-12
TW201920735A (zh) 2019-06-01
CN109461698B (zh) 2024-04-12
EP3447793A1 (en) 2019-02-27
JP2023182638A (ja) 2023-12-26
JP2019062190A (ja) 2019-04-18
KR20190021184A (ko) 2019-03-05
US20190067201A1 (en) 2019-02-28
JP7634930B2 (ja) 2025-02-25
US10847463B2 (en) 2020-11-24
EP3447793B1 (en) 2021-01-06

Similar Documents

Publication Publication Date Title
TWI803510B (zh) 用於銅互連件之晶種層
KR102036245B1 (ko) 구리 배리어 적용들을 위한 도핑된 탄탈룸 질화물
JP7066929B2 (ja) インターコネクトのためのルテニウムメタルによるフィーチャ充填
KR102189781B1 (ko) 망간 및 망간 니트라이드들의 증착 방법들
CN101558476B (zh) 互连结构和制造嵌入结构的方法
US9343402B2 (en) Semiconductor device having Ti- and N-containing layer, and manufacturing method of same
KR20190050869A (ko) 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡
TWI694501B (zh) 防止銅擴散的介電/金屬阻障集成
JP2008244298A (ja) 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
CN117882184A (zh) 形成用于互连结构的金属衬垫的方法
JP2020536395A (ja) 相互接続のためのルテニウム金属機能フィリング
TWI853995B (zh) 用於混成特徵金屬化之方法與設備
US10373867B2 (en) Cobalt contact and interconnect structures
JP2005203569A (ja) 半導体装置の製造方法及び半導体装置
KR100622639B1 (ko) 반도체 소자의 제조 방법
TW202431541A (zh) 阻障層與襯墊層的電漿處置
KR101089249B1 (ko) 반도체 소자 및 그 제조 방법