JP2010539698A5 - - Google Patents

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Publication number
JP2010539698A5
JP2010539698A5 JP2010524601A JP2010524601A JP2010539698A5 JP 2010539698 A5 JP2010539698 A5 JP 2010539698A5 JP 2010524601 A JP2010524601 A JP 2010524601A JP 2010524601 A JP2010524601 A JP 2010524601A JP 2010539698 A5 JP2010539698 A5 JP 2010539698A5
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JP
Japan
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precursor
metal film
gas
recess
patterned substrate
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JP2010524601A
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Japanese (ja)
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JP5406191B2 (ja
JP2010539698A (ja
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Priority claimed from US11/853,393 external-priority patent/US7829454B2/en
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JP2010524601A 2007-09-11 2008-09-09 ルテニウムの選択堆積を半導体デバイスの作製に統合する方法 Active JP5406191B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/853,393 2007-09-11
US11/853,393 US7829454B2 (en) 2007-09-11 2007-09-11 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
PCT/IB2008/003805 WO2009060320A2 (en) 2007-09-11 2008-09-09 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device

Publications (3)

Publication Number Publication Date
JP2010539698A JP2010539698A (ja) 2010-12-16
JP2010539698A5 true JP2010539698A5 (enExample) 2011-10-13
JP5406191B2 JP5406191B2 (ja) 2014-02-05

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JP2010524601A Active JP5406191B2 (ja) 2007-09-11 2008-09-09 ルテニウムの選択堆積を半導体デバイスの作製に統合する方法

Country Status (6)

Country Link
US (1) US7829454B2 (enExample)
JP (1) JP5406191B2 (enExample)
KR (1) KR101506755B1 (enExample)
CN (1) CN101965635B (enExample)
TW (1) TWI387051B (enExample)
WO (1) WO2009060320A2 (enExample)

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