JP2009161512A5 - - Google Patents
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- Publication number
- JP2009161512A5 JP2009161512A5 JP2008284616A JP2008284616A JP2009161512A5 JP 2009161512 A5 JP2009161512 A5 JP 2009161512A5 JP 2008284616 A JP2008284616 A JP 2008284616A JP 2008284616 A JP2008284616 A JP 2008284616A JP 2009161512 A5 JP2009161512 A5 JP 2009161512A5
- Authority
- JP
- Japan
- Prior art keywords
- formula
- diffusion barrier
- carboxylic acid
- barrier layer
- chc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 9
- 239000010949 copper Substances 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 5
- 150000001735 carboxylic acids Chemical class 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 239000012691 Cu precursor Substances 0.000 claims 4
- 239000003638 chemical reducing agent Substances 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 4
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 235000019253 formic acid Nutrition 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 claims 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910000086 alane Inorganic materials 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims 1
- 229910000085 borane Inorganic materials 0.000 claims 1
- 150000001733 carboxylic acid esters Chemical class 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910000078 germane Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000011541 reaction mixture Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98542807P | 2007-11-05 | 2007-11-05 | |
| US60/985,428 | 2007-11-05 | ||
| US12/258,996 | 2008-10-27 | ||
| US12/258,996 US8263795B2 (en) | 2007-11-05 | 2008-10-27 | Copper precursors for thin film deposition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013021211A Division JP2013136600A (ja) | 2007-11-05 | 2013-02-06 | 薄膜堆積のための銅前駆体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009161512A JP2009161512A (ja) | 2009-07-23 |
| JP2009161512A5 true JP2009161512A5 (enExample) | 2011-07-21 |
| JP5248986B2 JP5248986B2 (ja) | 2013-07-31 |
Family
ID=40587180
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008284616A Expired - Fee Related JP5248986B2 (ja) | 2007-11-05 | 2008-11-05 | 薄膜堆積のための銅前駆体 |
| JP2013021211A Pending JP2013136600A (ja) | 2007-11-05 | 2013-02-06 | 薄膜堆積のための銅前駆体 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013021211A Pending JP2013136600A (ja) | 2007-11-05 | 2013-02-06 | 薄膜堆積のための銅前駆体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8263795B2 (enExample) |
| JP (2) | JP5248986B2 (enExample) |
| KR (1) | KR101046853B1 (enExample) |
| CN (1) | CN101514209B (enExample) |
| TW (1) | TWI353988B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
| WO2010132871A1 (en) | 2009-05-15 | 2010-11-18 | Wayne State University | Thermally stable volatile film precursors |
| US9822446B2 (en) | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
| WO2012027357A2 (en) | 2010-08-24 | 2012-03-01 | Wayne State University | Thermally stable volatile precursors |
| KR102082627B1 (ko) * | 2011-07-06 | 2020-02-28 | 웨인 스테이트 유니버시티 | 전이 금속 박막의 원자층 증착 |
| US8907115B2 (en) | 2012-12-10 | 2014-12-09 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition |
| US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
| US9157149B2 (en) | 2013-06-28 | 2015-10-13 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| US9249505B2 (en) | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| JP6362337B2 (ja) * | 2014-01-21 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN103839604A (zh) * | 2014-02-26 | 2014-06-04 | 京东方科技集团股份有限公司 | 导电膜及其制备方法、阵列基板 |
| US9553054B2 (en) | 2014-10-23 | 2017-01-24 | Globalfoundries Inc. | Strain detection structures for bonded wafers and chips |
| WO2018165055A1 (en) * | 2017-03-06 | 2018-09-13 | Csub Auxiliary For Sponsored Programs Administration | Vapor-phase deposition of germanium nanostructures on substrates using solid-phase germanium sources |
| TWI773839B (zh) | 2017-10-14 | 2022-08-11 | 美商應用材料股份有限公司 | 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成 |
| KR20220161371A (ko) * | 2020-04-01 | 2022-12-06 | 가부시키가이샤 아데카 | 원자층 퇴적법용 박막 형성용 원료 및 박막의 제조 방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| JP3079814B2 (ja) | 1992-11-11 | 2000-08-21 | 三菱マテリアル株式会社 | 銅膜形成用材料 |
| KR20000013302A (ko) * | 1998-08-06 | 2000-03-06 | 최형수 | 화학 증착법을 위한 유기 구리 전구체 |
| US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
| US6642401B2 (en) | 2000-03-14 | 2003-11-04 | Nissan Chemical Industries, Ltd. | β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same |
| US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
| JP4660924B2 (ja) * | 2000-12-25 | 2011-03-30 | 東ソー株式会社 | 安定化された銅錯体及びその製造方法 |
| WO2003044242A2 (en) * | 2001-11-16 | 2003-05-30 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
| US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
| US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
| US7034169B1 (en) * | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
| WO2008085426A1 (en) | 2006-12-28 | 2008-07-17 | Air Products And Chemicals, Inc. | Volatile liquid copper precursors for thin film applications |
| US8283485B2 (en) * | 2007-06-21 | 2012-10-09 | Air Products And Chemicals, Inc. | Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition |
| EP2014790A1 (en) | 2007-06-21 | 2009-01-14 | Air Products and Chemicals, Inc. | Process for forming continuous copper thin films via vapor deposition |
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
-
2008
- 2008-10-27 US US12/258,996 patent/US8263795B2/en not_active Expired - Fee Related
- 2008-11-04 TW TW097142566A patent/TWI353988B/zh not_active IP Right Cessation
- 2008-11-05 CN CN2008101887411A patent/CN101514209B/zh not_active Expired - Fee Related
- 2008-11-05 KR KR1020080109307A patent/KR101046853B1/ko not_active Expired - Fee Related
- 2008-11-05 JP JP2008284616A patent/JP5248986B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-06 JP JP2013021211A patent/JP2013136600A/ja active Pending
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