CN101514209B - 用于薄膜沉积的铜前体 - Google Patents

用于薄膜沉积的铜前体 Download PDF

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Publication number
CN101514209B
CN101514209B CN2008101887411A CN200810188741A CN101514209B CN 101514209 B CN101514209 B CN 101514209B CN 2008101887411 A CN2008101887411 A CN 2008101887411A CN 200810188741 A CN200810188741 A CN 200810188741A CN 101514209 B CN101514209 B CN 101514209B
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China
Prior art keywords
copper
precursor
alkyl
film
precursors
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Expired - Fee Related
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CN2008101887411A
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English (en)
Chinese (zh)
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CN101514209A (zh
Inventor
J·A·T·诺曼
M·K·佩雷茨
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Versum Materials US LLC
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Air Products and Chemicals Inc
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Publication of CN101514209A publication Critical patent/CN101514209A/zh
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008101887411A 2007-11-05 2008-11-05 用于薄膜沉积的铜前体 Expired - Fee Related CN101514209B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98542807P 2007-11-05 2007-11-05
US60/985428 2007-11-05
US12/258996 2008-10-27
US12/258,996 US8263795B2 (en) 2007-11-05 2008-10-27 Copper precursors for thin film deposition

Publications (2)

Publication Number Publication Date
CN101514209A CN101514209A (zh) 2009-08-26
CN101514209B true CN101514209B (zh) 2012-06-06

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CN2008101887411A Expired - Fee Related CN101514209B (zh) 2007-11-05 2008-11-05 用于薄膜沉积的铜前体

Country Status (5)

Country Link
US (1) US8263795B2 (enExample)
JP (2) JP5248986B2 (enExample)
KR (1) KR101046853B1 (enExample)
CN (1) CN101514209B (enExample)
TW (1) TWI353988B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
WO2010132871A1 (en) 2009-05-15 2010-11-18 Wayne State University Thermally stable volatile film precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
WO2012027357A2 (en) 2010-08-24 2012-03-01 Wayne State University Thermally stable volatile precursors
KR102082627B1 (ko) * 2011-07-06 2020-02-28 웨인 스테이트 유니버시티 전이 금속 박막의 원자층 증착
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
JP6362337B2 (ja) * 2014-01-21 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
US9553054B2 (en) 2014-10-23 2017-01-24 Globalfoundries Inc. Strain detection structures for bonded wafers and chips
WO2018165055A1 (en) * 2017-03-06 2018-09-13 Csub Auxiliary For Sponsored Programs Administration Vapor-phase deposition of germanium nanostructures on substrates using solid-phase germanium sources
TWI773839B (zh) 2017-10-14 2022-08-11 美商應用材料股份有限公司 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成
KR20220161371A (ko) * 2020-04-01 2022-12-06 가부시키가이샤 아데카 원자층 퇴적법용 박막 형성용 원료 및 박막의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes

Family Cites Families (16)

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US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP3079814B2 (ja) 1992-11-11 2000-08-21 三菱マテリアル株式会社 銅膜形成用材料
KR20000013302A (ko) * 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6642401B2 (en) 2000-03-14 2003-11-04 Nissan Chemical Industries, Ltd. β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP4660924B2 (ja) * 2000-12-25 2011-03-30 東ソー株式会社 安定化された銅錯体及びその製造方法
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US20040247905A1 (en) * 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
WO2008085426A1 (en) 2006-12-28 2008-07-17 Air Products And Chemicals, Inc. Volatile liquid copper precursors for thin film applications
US8283485B2 (en) * 2007-06-21 2012-10-09 Air Products And Chemicals, Inc. Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
EP2014790A1 (en) 2007-06-21 2009-01-14 Air Products and Chemicals, Inc. Process for forming continuous copper thin films via vapor deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2002-193988A 2002.07.10

Also Published As

Publication number Publication date
JP2009161512A (ja) 2009-07-23
CN101514209A (zh) 2009-08-26
JP2013136600A (ja) 2013-07-11
US20090114874A1 (en) 2009-05-07
JP5248986B2 (ja) 2013-07-31
TWI353988B (en) 2011-12-11
KR101046853B1 (ko) 2011-07-06
TW200922940A (en) 2009-06-01
US8263795B2 (en) 2012-09-11
KR20090046725A (ko) 2009-05-11

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