CN103839604A - 导电膜及其制备方法、阵列基板 - Google Patents

导电膜及其制备方法、阵列基板 Download PDF

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CN103839604A
CN103839604A CN201410067432.4A CN201410067432A CN103839604A CN 103839604 A CN103839604 A CN 103839604A CN 201410067432 A CN201410067432 A CN 201410067432A CN 103839604 A CN103839604 A CN 103839604A
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conducting film
copper
sputter
regulation
deposition
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张斌
李正亮
刘震
丁录科
曹占锋
惠官宝
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BOE Technology Group Co Ltd
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Abstract

本发明实施例提供了一种导电膜及其制备方法、阵列基板，属于微小半导体器件的导电膜领域，以防止铜原子扩散到半导体层中。所述导电膜包括铜或铜合金的基膜，所述基膜内分布有元素氢或碳。本发明可用于阵列基板的制造中。

Description

导电膜及其制备方法、阵列基板
技术领域
本发明涉及微小半导体器件的导电膜领域，尤其涉及一种导电膜及其制备方法、阵列基板。
背景技术
近年来，在半导体集成电路或FPD（平板显示器）的晶体管中，用于电子零件的金属布线膜大多使用的是铝或铜等低电阻材料。例如在薄膜晶体管显示器中，随着面板的大型化，对于布线电极的低电阻化的要求也在逐渐提高，因而使用铝或铜作为低电阻布线的必要性也越来越高。
由于铜的电阻低于铝，且不易氧化，同时还能避免铝与由ITO构成的透明电极的接触电阻劣化的问题，现阶段大多把铜作为低电阻布线膜来使用。但铜与其他布线材料相比，当其作为源/漏电极使用时，还存在着铜容易扩散至硅半导体或氧化物半导体的问题，尤其是在其与氧化物半导体或由氧化物构成的层间绝缘膜接触时，铜原子易向氧化物中扩散的问题。
在现有技术中，通常会在铜中添加钼等元素或是纯粹的在铜溅镀的成膜工序中导入氮或氧以解决防止铜原子扩散的问题，但起到的效果均不佳。
发明内容
本发明实施例提供了一种导电膜及其制备方法、阵列基板，以防止铜原子扩散到半导体层中。
为达到上述目的，本发明的实施例采用如下技术方案：
一种导电膜，包括铜或铜合金的基膜，所述基膜内分布有元素氢或碳。
可选的，所述铜合金的成分包括锰、铝、镁、钙、锌、钛、锆、铪、钒、铌、钽、铬、钼、钨、铁、钌、锇、钴、铋、银、锡、硼、硅、镧、铈、镨和钕中的一种或几种。
可选的，所述导电膜中铜所占比例为75%以上并且小于100%。
一种阵列基板，所述阵列基板的像素单元包括栅极、栅极绝缘层、有源层、源/漏极和像素电极，栅极、源/漏电极和/或像素电极为：本发明实施例提供的导电膜；
或者本发明实施例提供的导电膜和铜膜的组合膜层。
一种由本发明实施例提供的导电膜的制备方法，包括如下步骤：
提供铜或铜合金靶材；
在磁控溅射镀膜设备的真空腔体中固定上述靶材，并将衬底放入真空腔体中，对真空腔体抽真空，并对所述衬底进行预热处理；
向真空腔体中通入工作气体以及溅射调控气体，调整溅射调控气体在沉积时的温度及分压，并在所述衬底上进行膜层沉积，制备得到所述导电膜。
可选的，所述溅射调控气体为氢气或甲烷。
可选的，所述溅射调控气体在沉积时的分压为1%-30%。
优选的，所述溅射调控气体在沉积时的分压为5%-15%。
可选的，所述溅射调控气体在沉积时的温度为0℃-800℃。
可选的，所述溅射调控气体在沉积时的温度为25℃-250℃。
本发明实施例提供了一种导电膜及其制备方法、阵列基板，与现有的导电膜相比不同的是，在本发明实施例提供的导电膜中溅射渗透有元素氢或碳。当元素氢或碳溅射渗入铜或铜合金膜内后，可在膜内形成有缺陷，通过该缺陷对其周围的铜原子形成束缚力，可有效的防止铜原子扩散到半导体层中，进而可增加导电膜的粘合力，提高导电膜的稳定性。
附图说明
图1为本发明实施例提供的导电膜的制备方法的流程图；
图2为本发明实施例提供的FFS型阵列基板的示意图；
图3为本发明实施例提供的又一FFS型阵列基板的示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
下面结合附图对本发明实施例提供的一种导电膜及其制备方法、阵列基板进行详细描述。
本发明实施例提供了一种导电膜，包括铜或铜合金的基膜，所述基膜内分布有元素氢或碳。
磁控溅射即电子在电场的作用下，在飞向衬底的过程中与氩原子发生碰撞，使其电离产生出氩离子和新电子；新电子飞向衬底，而氩离子在电场作用下加速飞向阴极靶，并以高能量轰击靶表面，使靶材发生溅射，并在溅射粒子的过程中使中性靶原子或分子沉积在衬底上，从而形成薄膜。在本实施例中，采用磁控溅射法，通过调整反应过程中所使用的工作气体的氛围，而使元素氢或碳溅射渗入铜或铜合金的基膜内部。
本发明实施例提供了一种导电膜，与现有的导电膜相比不同的是，在本发明实施例提供的导电膜中溅射渗透有元素氢或碳。当元素氢或碳溅射渗入铜或铜合金膜内后，可在膜内形成有缺陷，通过该缺陷对其周围的铜原子形成束缚力，可有效的防止铜原子扩散到半导体层中，进而可增加导电膜的粘合力，提高导电膜的稳定性。
为了使所述导电膜在溅射工艺中可在其内部形成有缺陷，从而对靶材中的铜原子产生束缚，并防止铜原子扩散到半导体材料中，这就需要溅射工艺中经轰击后产生的气体原子具有较小的原子半径，以便可以较好地渗入到铜或铜合金的基膜内部。可选的，在本实施例中，所述无机非金属元素选自氢或碳，而非其他非金属元素，同样也是考虑到了轰击后所产生的气体原子的原子半径大小。需要说明的是，本发明实施例中所列举的只为所述无机非金属元素中的优选方案，只要能达到在轰击后所得到的气体原子半径较小，可较好地渗入到导电膜内部的目的，本领域技术人员均可选择使用。
在本实施例中，选择铜或铜合金作为靶材主要是因为铜具有低电阻且导电性能良好，考虑到对其的硬度要求，在本发明实施例中，选用铜或铜合金作为靶材，其中，可选的，所述铜合金的成分包括锰、铝、镁、钙、锌、钛、锆、铪、钒、铌、钽、铬、钼、钨、铁、钌、锇、钴、铋、银、锡、硼、硅、镧、铈、镨和钕中的一种或几种。需要说明的是，对于铜合金中合金成分的组合方式可以在上述范围内任意组合，本实施例中优选为铜或铜钼合金、铜或铜锰合金、铜或铜镁铝合金或其他合金。
在本实施例提供的所述导电膜的靶材中，为了在提高靶材机械性能的同时不影响导电膜良好的导电性，可选的，所述导电膜中铜所占比例为75%以上并且小于100%，优选的，铜所占比例为80%-95%。
本发明实施例还提供了一种阵列基板，所述阵列基板的像素单元包括栅极、栅极绝缘层、有源层、源/漏极和像素电极，其中，栅极、源/漏电极和/或像素电极为：本发明实施例提供的导电膜；
或为本发明实施例提供的导电膜和铜膜的组合膜层。
可选的，在本实施例中，由本发明实施例提供的导电膜可作为阵列基板中的栅极、源/漏电极和/或像素电极使用。需要说明的是，当作为栅极、源/漏电极和/或像素电极使用时，可由本发明实施例提供的导电膜单独沉积形成，也可由本发明实施例提供的导电膜与铜膜连续沉积形成，即由导电膜-铜膜-导电膜组合沉积形成，当使用后者作为栅极、源/漏电极和/或像素电极使用时，导电膜可较好地防止中间沉积的铜膜中的铜原子向两个方向的半导体硅层中扩散，还可进一步提高铜的导电性能。需要说明的是，在阵列基板中，不只是栅极、源/漏电极和/或像素电极可使用由本发明实施例提供的导电膜构成，阵列基板中的其他金属膜层也均可由其形成，本领域技术人员可根据实际需要进行选择，此处不再一一赘述。
本发明实施例提供了一种阵列基板，在该阵列基板中，其中的金属膜层均可由本发明实施例提供的导电膜形成。由于在本发明实施例提供的导电膜中溅射渗透有元素氢或碳，且元素氢或碳溅射渗入铜或铜合金膜内后，可在膜内形成有缺陷，通过该缺陷对其周围的铜原子形成束缚力，可有效的防止铜原子扩散到半导体层中，进而可增加导电膜的粘合力，将其应用于各金属膜层后，还可进一步提高阵列基板的稳定性。
图1为本发明实施例提供的导电膜的制备方法的流程图。由图1可知，本发明实施例还提供了一种导电膜的制备方法，包括如下步骤：
提供铜或铜合金靶材；
在磁控溅射镀膜设备的真空腔体中固定上述靶材，并将衬底放入真空腔体中，对真空腔体抽真空，并对所述衬底进行预热处理；
向真空腔体中通入工作气体以及溅射调控气体，调整溅射调控气体在沉积时的温度及分压，并在所述衬底上进行膜层沉积，制备得到所述导电膜。
在本步骤中，需向真空腔体内一同通入工作气体与溅射调控气体，所述工作气体用于与电子发生碰撞从而形成高能量的气体原子去轰击靶材，以使靶材发生溅射，所述溅射调控气体用于在碰撞过程中形成原子半径较小的气体原子，通过溅射渗透进入由靶材溅射形成的基膜内部，以在其内部形成溅射后的缺陷，从而对靶材中的铜原子产生束缚，进而防止其扩散进入半导体材料层中。
其中，所述工作气体为氩气，而对于所述溅射调控气体而言，需选择不与靶材发生反应、且在轰击后可产生较小原子半径的气体，在本实施例中，可选的，所述溅射调控气体为氢气或甲烷。
此外，所述溅射调控气体在沉积时的分压可调节为1%-30%。在该范围内对其分压进行调节，可保证由此制备得到的导电膜在其内部充分地形成了缺陷，从而可对其内部的碳原子进行较好地束缚。若小于1%，则不能很好地将元素氢或碳沉积在导电膜内，若大于30%，则会影响在工作气体在磁控溅射过程中的效果。优选的，所述溅射调控气体在沉积时的分压为5%-15%，在该范围，能够很好地兼顾以上两点问题。
在溅射过程中，随着碰撞次数的增加，电子的能量消耗殆尽，此事由于该电子的能量较低，所以由其传递给衬底的能量也较小，致使衬底的温度较低。为了保证在反应过程中的顺利进行，可选的，所述溅射调控气体在沉积时的温度为0℃-800℃，优选的，所述温度为25℃-250℃。需要说明的是，反应温度可根据不同的磁控溅射工艺进行调节，保持在相对较低的反应温度下进行反应，可使溅射形成的薄膜更加均匀，此外还可避免损害对热承受度不高的元件。
本发明实施例提供了一种导电膜的制备方法，由该方法可在所述导电膜中渗透有元素氢或碳，当元素氢或碳溅射渗入铜及铜合金膜内后，可在膜内形成有缺陷，通过该缺陷对其周围的铜原子形成束缚力，可有效的防止铜原子扩散到半导体层中，进而可增加导电膜的粘合力，提高阵列基板的稳定性。该方法易操作、适用性强，可广泛的应用在阵列基板的制造中。
为了更好说明本发明提供的一种导电膜及其制备方法、阵列基板，下面以具体实施例进行详细说明。实施例1-2详细说明了将本发明实施例提供的导电膜应用在FFS型阵列基板中的两种具体实施方式，但可以理解的是，本发明实施例提供的导电膜还可应用于TN、VA、IPS、ADS以及OLED类型的阵列基板中以及其所涉及的金属电极领域中。需强调的是，在以上每种实施的方式中，由非晶硅和掺杂非晶硅制备得到的有源层均可被替代为氧化物半导体有源层进行使用。
实施例1
如图2所示，在基板21上采用磁控溅射沉积栅极层薄膜22（渗氢/碳的铜或铜合金层），通过一次构图工艺，形成包括栅极的栅极层图形；以其为衬底，采用化学气相沉积法沉积栅绝缘层23和有源层（包括非晶硅层24和掺杂非晶硅层25），通过一次构图工艺，形成有源层图案；然后以此为衬底，采用磁控溅射沉积源/漏电极层26（渗氢/碳的铜或铜合金层），通过一次构图工艺，形成包括源极、漏极的源漏极层图形；之后再换用化学气相沉积法沉积钝化层薄膜27，通过一次构图工艺，形成包括过孔的钝化层图形；最后采用磁控溅射沉积像素电极层28（渗氢/碳的铜或铜合金层），通过一次构图工艺，形成包括像素电极的像素电极层图形，所述像素电极通过所述过孔与所述漏极连接。其中，栅极层22、源/漏电极层26和/或像素电极层28为渗氢/碳的铜或铜合金层，其主要成份为铜或铜钼合金、铜或铜锰合金、铜或铜镁铝或其他合金，在H2气氛下通过溅射等方式溅射形成渗氢/碳的铜或铜合金电极层。其中，所述电极层Cu含量为80%，沉积时H2的分压为5%，温度为25℃。
实施例2
如图3所示，在基板31上采用磁控溅射依次沉积渗氢/碳的铜或铜合金层33和栅极层薄膜（铜膜层）32，通过一次构图工艺，形成包括栅极的栅极层图形；以其为衬底，采用化学气相沉积法沉积栅绝缘层34和氧化物半导体层35，通过一次构图工艺，形成氧化物半导体层图案；然后以此为衬底，采用磁控溅射依次沉积渗氢/碳的铜或铜合金层、源/漏电极层36（铜膜层）和渗氢/碳的铜或铜合金层，通过一次构图工艺，形成包括源极、漏极的源漏极层图形；之后再换用化学气相沉积法沉积钝化层薄膜37，通过一次构图工艺，形成包括过孔的钝化层图形；最后采用磁控溅射沉积像素电极层38（渗氢/碳的铜或铜合金层），通过一次构图工艺，形成包括像素电极的像素电极层图形，所述像素电极通过所述过孔与所述漏极连接。其中，在栅极层32、源/漏电极层36层的上和/或下方覆有渗氢/碳的铜或铜合金层，可有效的防止铜膜层中的铜原子扩散到周围的半导体层中，其主要成份为铜或铜钼合金、铜或铜锰合金、铜或铜镁铝或其他合金，在CH4气氛下通过溅射等方式溅射形成渗氢/碳的铜或铜合金电极层。其中，所述电极层Cu含量为85%，沉积时CH4的分压为15%，温度为150℃。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围。

Claims (10)

1.一种导电膜，其特征在于，包括铜或铜合金的基膜，所述基膜内分布有元素氢或碳。
2.根据权利要求1所述的导电膜，其特征在于，所述铜合金的成分包括锰、铝、镁、钙、锌、钛、锆、铪、钒、铌、钽、铬、钼、钨、铁、钌、锇、钴、铋、银、锡、硼、硅、镧、铈、镨和钕中的一种或几种。
3.根据权利要求1或2所述的导电膜，其特征在于，所述导电膜中铜所占比例为75%以上并且小于100%。
4.一种阵列基板，所述阵列基板的像素单元包括栅极、栅极绝缘层、有源层、源/漏极和像素电极，其特征在于，栅极、源/漏电极和/或像素电极为：权利要求1-3任一项所述的导电膜；
或者权利要求1-3任一项所述的导电膜和铜膜的组合膜层。
5.一种如权利要求1-3任一项所述的导电膜的制备方法，其特征在于，包括如下步骤：
提供铜或铜合金靶材；
在磁控溅射镀膜设备的真空腔体中固定上述靶材，并将衬底放入真空腔体中，对真空腔体抽真空，并对所述衬底进行预热处理；
向真空腔体中通入工作气体以及溅射调控气体，调整溅射调控气体在沉积时的温度及分压，并在所述衬底上进行膜层沉积，制备得到导电膜。
6.根据权利要求5所述的制备方法，其特征在于，所述溅射调控气体为氢气或甲烷。
7.根据权利要求5所述的制备方法，其特征在于，所述溅射调控气体在沉积时的分压为1%-30%。
8.根据权利要求7所述的制备方法，其特征在于，所述溅射调控气体在沉积时的分压为5%-15%。
9.根据权利要求5所述的制备方法，其特征在于，所述溅射调控气体在沉积时的温度为0℃-800℃。
10.根据权利要求9所述的制备方法，其特征在于，所述溅射调控气体在沉积时的温度为25℃-250℃。
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