KR101046853B1 - 박막 증착을 위한 구리 전구체 - Google Patents

박막 증착을 위한 구리 전구체 Download PDF

Info

Publication number
KR101046853B1
KR101046853B1 KR1020080109307A KR20080109307A KR101046853B1 KR 101046853 B1 KR101046853 B1 KR 101046853B1 KR 1020080109307 A KR1020080109307 A KR 1020080109307A KR 20080109307 A KR20080109307 A KR 20080109307A KR 101046853 B1 KR101046853 B1 KR 101046853B1
Authority
KR
South Korea
Prior art keywords
copper
formula
precursor
film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080109307A
Other languages
English (en)
Korean (ko)
Other versions
KR20090046725A (ko
Inventor
존 안토니 토마스 노르만
멜라니 케이. 페레즈
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 filed Critical 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Publication of KR20090046725A publication Critical patent/KR20090046725A/ko
Application granted granted Critical
Publication of KR101046853B1 publication Critical patent/KR101046853B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080109307A 2007-11-05 2008-11-05 박막 증착을 위한 구리 전구체 Expired - Fee Related KR101046853B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98542807P 2007-11-05 2007-11-05
US60/985,428 2007-11-05
US12/258,996 US8263795B2 (en) 2007-11-05 2008-10-27 Copper precursors for thin film deposition
US12/258,996 2008-10-27

Publications (2)

Publication Number Publication Date
KR20090046725A KR20090046725A (ko) 2009-05-11
KR101046853B1 true KR101046853B1 (ko) 2011-07-06

Family

ID=40587180

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080109307A Expired - Fee Related KR101046853B1 (ko) 2007-11-05 2008-11-05 박막 증착을 위한 구리 전구체

Country Status (5)

Country Link
US (1) US8263795B2 (enExample)
JP (2) JP5248986B2 (enExample)
KR (1) KR101046853B1 (enExample)
CN (1) CN101514209B (enExample)
TW (1) TWI353988B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US8962876B2 (en) 2009-05-15 2015-02-24 Wayne State University Thermally stable volatile film precursors
WO2012027357A2 (en) 2010-08-24 2012-03-01 Wayne State University Thermally stable volatile precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
WO2013006242A1 (en) * 2011-07-06 2013-01-10 Wayne State University Atomic layer deposition of transition metal thin films
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
JP6362337B2 (ja) * 2014-01-21 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
US9553054B2 (en) 2014-10-23 2017-01-24 Globalfoundries Inc. Strain detection structures for bonded wafers and chips
US20180251885A1 (en) * 2017-03-06 2018-09-06 Csub Auxiliary For Sponsored Programs Administration Vapor-Phase Deposition of Germanium Nanostructures on Substrates Using Solid-Phase Germanium Sources
KR102744268B1 (ko) 2017-10-14 2024-12-17 어플라이드 머티어리얼스, 인코포레이티드 Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적
EP4130335A4 (en) * 2020-04-01 2024-07-03 Adeka Corporation Material for formation of thin film for use in atomic layer deposition and method for producing thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070074516A (ko) * 2004-12-30 2007-07-12 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 휘발성 금속 베타-케토이미네이트 및 금속베타-디이미네이트 착물

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP3079814B2 (ja) 1992-11-11 2000-08-21 三菱マテリアル株式会社 銅膜形成用材料
KR20000013302A (ko) * 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
EP1264817A1 (en) 2000-03-14 2002-12-11 Nissan Chemical Industries, Ltd. $g(b)-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP4660924B2 (ja) * 2000-12-25 2011-03-30 東ソー株式会社 安定化された銅錯体及びその製造方法
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US20040247905A1 (en) * 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
WO2008085426A1 (en) 2006-12-28 2008-07-17 Air Products And Chemicals, Inc. Volatile liquid copper precursors for thin film applications
US8283485B2 (en) * 2007-06-21 2012-10-09 Air Products And Chemicals, Inc. Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
EP2014790A1 (en) 2007-06-21 2009-01-14 Air Products and Chemicals, Inc. Process for forming continuous copper thin films via vapor deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070074516A (ko) * 2004-12-30 2007-07-12 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 휘발성 금속 베타-케토이미네이트 및 금속베타-디이미네이트 착물

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Journal of The Electrochemical Society, 2004, Vol. 152, No. 2, pp. G122-G125

Also Published As

Publication number Publication date
KR20090046725A (ko) 2009-05-11
US20090114874A1 (en) 2009-05-07
US8263795B2 (en) 2012-09-11
TWI353988B (en) 2011-12-11
JP2009161512A (ja) 2009-07-23
CN101514209B (zh) 2012-06-06
JP5248986B2 (ja) 2013-07-31
CN101514209A (zh) 2009-08-26
JP2013136600A (ja) 2013-07-11
TW200922940A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
KR101046853B1 (ko) 박막 증착을 위한 구리 전구체
KR100759779B1 (ko) 휘발성 금속 베타-케토이미네이트 착물
KR100824913B1 (ko) 휘발성 금속 베타-케토이미네이트 및 금속베타-디이미네이트 착물
US10544506B2 (en) Method of forming a silicon nitride film using Si—N containing precursors
TWI776823B (zh) 含有環戊二烯配位基之金屬錯合物以及形成含金屬之膜之方法
US10011903B2 (en) Manganese-containing film forming compositions, their synthesis, and use in film deposition
JP2012062303A (ja) 揮発性イミダゾール及び二族イミダゾール系金属前駆体
US20210032275A1 (en) Cyclic germanium silylamido precursors for ge-containing film depositions and methods of using the same
KR20090018986A (ko) 구리 박막 형성을 위한 구리(ｉ) 아미디네이트 및 구아니디네이트
EP2060577B1 (en) Copper precursors for thin film deposition
CN100393727C (zh) 挥发性金属β-酮亚胺盐配合物
TW201928099A (zh) 二取代炔基二鈷六羰基化合物、其製造及使用方法
KR101965217B1 (ko) 탄탈럼 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
EP1792907A1 (en) Volatile metal beta-ketoiminate complexes
KR20230050655A (ko) 할로겐을 포함하지 않는 텅스텐 화합물, 이의 제조방법 및 이를 이용하여　박막을 형성하는 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P18-X000 Priority claim added or amended

St.27 status event code: A-2-2-P10-P18-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140529

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160330

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20180529

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190530

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220630

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220630