TWI353988B - Copper precursors for thin film deposition - Google Patents

Copper precursors for thin film deposition Download PDF

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Publication number
TWI353988B
TWI353988B TW097142566A TW97142566A TWI353988B TW I353988 B TWI353988 B TW I353988B TW 097142566 A TW097142566 A TW 097142566A TW 97142566 A TW97142566 A TW 97142566A TW I353988 B TWI353988 B TW I353988B
Authority
TW
Taiwan
Prior art keywords
copper
group
precursor
formula
film
Prior art date
Application number
TW097142566A
Other languages
English (en)
Chinese (zh)
Other versions
TW200922940A (en
Inventor
John Anthony Thomas Norman
Melanie K Perez
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of TW200922940A publication Critical patent/TW200922940A/zh
Application granted granted Critical
Publication of TWI353988B publication Critical patent/TWI353988B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097142566A 2007-11-05 2008-11-04 Copper precursors for thin film deposition TWI353988B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98542807P 2007-11-05 2007-11-05
US12/258,996 US8263795B2 (en) 2007-11-05 2008-10-27 Copper precursors for thin film deposition

Publications (2)

Publication Number Publication Date
TW200922940A TW200922940A (en) 2009-06-01
TWI353988B true TWI353988B (en) 2011-12-11

Family

ID=40587180

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142566A TWI353988B (en) 2007-11-05 2008-11-04 Copper precursors for thin film deposition

Country Status (5)

Country Link
US (1) US8263795B2 (enExample)
JP (2) JP5248986B2 (enExample)
KR (1) KR101046853B1 (enExample)
CN (1) CN101514209B (enExample)
TW (1) TWI353988B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US8962876B2 (en) 2009-05-15 2015-02-24 Wayne State University Thermally stable volatile film precursors
WO2012027357A2 (en) 2010-08-24 2012-03-01 Wayne State University Thermally stable volatile precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
WO2013006242A1 (en) * 2011-07-06 2013-01-10 Wayne State University Atomic layer deposition of transition metal thin films
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
JP6362337B2 (ja) * 2014-01-21 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
US9553054B2 (en) 2014-10-23 2017-01-24 Globalfoundries Inc. Strain detection structures for bonded wafers and chips
US20180251885A1 (en) * 2017-03-06 2018-09-06 Csub Auxiliary For Sponsored Programs Administration Vapor-Phase Deposition of Germanium Nanostructures on Substrates Using Solid-Phase Germanium Sources
KR102744268B1 (ko) 2017-10-14 2024-12-17 어플라이드 머티어리얼스, 인코포레이티드 Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적
EP4130335A4 (en) * 2020-04-01 2024-07-03 Adeka Corporation Material for formation of thin film for use in atomic layer deposition and method for producing thin film

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP3079814B2 (ja) 1992-11-11 2000-08-21 三菱マテリアル株式会社 銅膜形成用材料
KR20000013302A (ko) * 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
EP1264817A1 (en) 2000-03-14 2002-12-11 Nissan Chemical Industries, Ltd. $g(b)-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP4660924B2 (ja) * 2000-12-25 2011-03-30 東ソー株式会社 安定化された銅錯体及びその製造方法
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US20040247905A1 (en) * 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
WO2008085426A1 (en) 2006-12-28 2008-07-17 Air Products And Chemicals, Inc. Volatile liquid copper precursors for thin film applications
US8283485B2 (en) * 2007-06-21 2012-10-09 Air Products And Chemicals, Inc. Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
EP2014790A1 (en) 2007-06-21 2009-01-14 Air Products and Chemicals, Inc. Process for forming continuous copper thin films via vapor deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition

Also Published As

Publication number Publication date
KR20090046725A (ko) 2009-05-11
US20090114874A1 (en) 2009-05-07
US8263795B2 (en) 2012-09-11
JP2009161512A (ja) 2009-07-23
KR101046853B1 (ko) 2011-07-06
CN101514209B (zh) 2012-06-06
JP5248986B2 (ja) 2013-07-31
CN101514209A (zh) 2009-08-26
JP2013136600A (ja) 2013-07-11
TW200922940A (en) 2009-06-01

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