JP2006516031A5 - - Google Patents

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Publication number
JP2006516031A5
JP2006516031A5 JP2006500776A JP2006500776A JP2006516031A5 JP 2006516031 A5 JP2006516031 A5 JP 2006516031A5 JP 2006500776 A JP2006500776 A JP 2006500776A JP 2006500776 A JP2006500776 A JP 2006500776A JP 2006516031 A5 JP2006516031 A5 JP 2006516031A5
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JP
Japan
Prior art keywords
alkyl
independently
tantalum
trimethylsilyl
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006500776A
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English (en)
Japanese (ja)
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JP2006516031A (ja
Filing date
Publication date
Priority claimed from US10/345,616 external-priority patent/US6989457B2/en
Application filed filed Critical
Publication of JP2006516031A publication Critical patent/JP2006516031A/ja
Publication of JP2006516031A5 publication Critical patent/JP2006516031A5/ja
Pending legal-status Critical Current

Links

JP2006500776A 2003-01-16 2004-01-06 タンタル系材料の蒸着のための化学蒸着前駆体 Pending JP2006516031A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/345,616 US6989457B2 (en) 2003-01-16 2003-01-16 Chemical vapor deposition precursors for deposition of tantalum-based materials
PCT/US2004/000060 WO2004065650A2 (en) 2003-01-16 2004-01-06 Chemical vapor deposition precursors for deposition of tantalum-based materials

Publications (2)

Publication Number Publication Date
JP2006516031A JP2006516031A (ja) 2006-06-15
JP2006516031A5 true JP2006516031A5 (enExample) 2007-03-01

Family

ID=32711960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006500776A Pending JP2006516031A (ja) 2003-01-16 2004-01-06 タンタル系材料の蒸着のための化学蒸着前駆体

Country Status (6)

Country Link
US (2) US6989457B2 (enExample)
EP (1) EP1599488A4 (enExample)
JP (1) JP2006516031A (enExample)
KR (1) KR101062591B1 (enExample)
CN (1) CN1738826A (enExample)
WO (1) WO2004065650A2 (enExample)

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US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
JP5053543B2 (ja) * 2005-02-02 2012-10-17 東ソー株式会社 タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
DE102005033102A1 (de) * 2005-07-15 2007-01-25 H.C. Starck Gmbh Tantal- und Niob-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US7713876B2 (en) * 2005-09-28 2010-05-11 Tokyo Electron Limited Method for integrating a ruthenium layer with bulk copper in copper metallization
JP5096016B2 (ja) * 2006-02-14 2012-12-12 東ソー株式会社 タンタル化合物とその製造方法、及びそれを原料とするタンタル含有薄膜とその形成方法
KR20140139636A (ko) 2006-03-10 2014-12-05 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
US7959985B2 (en) * 2006-03-20 2011-06-14 Tokyo Electron Limited Method of integrating PEALD Ta-containing films into Cu metallization
US7959986B2 (en) * 2006-08-09 2011-06-14 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
DE102006037955A1 (de) * 2006-08-12 2008-02-14 H.C. Starck Gmbh Tantal- und Niob-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US8513789B2 (en) * 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
KR20090115197A (ko) * 2007-03-12 2009-11-04 쇼와 덴코 가부시키가이샤 코발트 함유막 형성 재료, 및 상기 재료를 이용한 코발트 실리사이드막의 제조 방법
KR20100016477A (ko) * 2007-04-12 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체
WO2009012341A2 (en) * 2007-07-16 2009-01-22 Advancaed Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US8455049B2 (en) * 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
DE102007049015A1 (de) 2007-10-11 2009-04-16 H.C. Starck Gmbh Neue Tantal- und Niob-Verbindungen
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
WO2012005957A2 (en) 2010-07-07 2012-01-12 Advanced Technology Materials, Inc. Doping of zro2 for dram applications
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
GB9714181D0 (en) 1997-07-05 1997-09-10 Bp Chem Int Ltd Polymerisation catalyst
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials

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