KR101062591B1 - 탄탈-기반 재료의 증착을 위한 화학 증기 증착 전구체 - Google Patents

탄탈-기반 재료의 증착을 위한 화학 증기 증착 전구체 Download PDF

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KR101062591B1
KR101062591B1 KR1020057013220A KR20057013220A KR101062591B1 KR 101062591 B1 KR101062591 B1 KR 101062591B1 KR 1020057013220 A KR1020057013220 A KR 1020057013220A KR 20057013220 A KR20057013220 A KR 20057013220A KR 101062591 B1 KR101062591 B1 KR 101062591B1
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South Korea
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tantalum
independently selected
alkyl
precursor
trimethylsilyl
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KR1020057013220A
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Korean (ko)
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KR20050100621A (ko
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스머러티 카메팔리
토마스. 에이치 바움
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어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057013220A 2003-01-16 2004-01-06 탄탈-기반 재료의 증착을 위한 화학 증기 증착 전구체 Expired - Fee Related KR101062591B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/345,616 2003-01-16
US10/345,616 US6989457B2 (en) 2003-01-16 2003-01-16 Chemical vapor deposition precursors for deposition of tantalum-based materials
PCT/US2004/000060 WO2004065650A2 (en) 2003-01-16 2004-01-06 Chemical vapor deposition precursors for deposition of tantalum-based materials

Publications (2)

Publication Number Publication Date
KR20050100621A KR20050100621A (ko) 2005-10-19
KR101062591B1 true KR101062591B1 (ko) 2011-09-06

Family

ID=32711960

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KR1020057013220A Expired - Fee Related KR101062591B1 (ko) 2003-01-16 2004-01-06 탄탈-기반 재료의 증착을 위한 화학 증기 증착 전구체

Country Status (6)

Country Link
US (2) US6989457B2 (enExample)
EP (1) EP1599488A4 (enExample)
JP (1) JP2006516031A (enExample)
KR (1) KR101062591B1 (enExample)
CN (1) CN1738826A (enExample)
WO (1) WO2004065650A2 (enExample)

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US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
JP5053543B2 (ja) 2005-02-02 2012-10-17 東ソー株式会社 タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
DE102005033102A1 (de) * 2005-07-15 2007-01-25 H.C. Starck Gmbh Tantal- und Niob-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US7713876B2 (en) * 2005-09-28 2010-05-11 Tokyo Electron Limited Method for integrating a ruthenium layer with bulk copper in copper metallization
JP5096016B2 (ja) * 2006-02-14 2012-12-12 東ソー株式会社 タンタル化合物とその製造方法、及びそれを原料とするタンタル含有薄膜とその形成方法
WO2007106788A2 (en) 2006-03-10 2007-09-20 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US7959985B2 (en) * 2006-03-20 2011-06-14 Tokyo Electron Limited Method of integrating PEALD Ta-containing films into Cu metallization
US7959986B2 (en) * 2006-08-09 2011-06-14 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
DE102006037955A1 (de) * 2006-08-12 2008-02-14 H.C. Starck Gmbh Tantal- und Niob-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US8513789B2 (en) * 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
CN101578390A (zh) * 2007-03-12 2009-11-11 昭和电工株式会社 形成含钴膜的材料以及使用该材料的硅化钴膜的制造方法
WO2008128141A2 (en) * 2007-04-12 2008-10-23 Advanced Technology Materials, Inc. Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
WO2009020888A1 (en) * 2007-08-08 2009-02-12 Advanced Technology Materials, Inc. Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
DE102007049015A1 (de) 2007-10-11 2009-04-16 H.C. Starck Gmbh Neue Tantal- und Niob-Verbindungen
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films

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Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
GB9714181D0 (en) * 1997-07-05 1997-09-10 Bp Chem Int Ltd Polymerisation catalyst
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Inorganic Chemistry vol.35 (1996), 7873쪽 내지 7881쪽*

Also Published As

Publication number Publication date
US7329768B2 (en) 2008-02-12
KR20050100621A (ko) 2005-10-19
WO2004065650A2 (en) 2004-08-05
WO2004065650A3 (en) 2005-01-27
JP2006516031A (ja) 2006-06-15
US6989457B2 (en) 2006-01-24
EP1599488A2 (en) 2005-11-30
US20060135803A1 (en) 2006-06-22
CN1738826A (zh) 2006-02-22
US20040142555A1 (en) 2004-07-22
EP1599488A4 (en) 2009-11-11

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