JP2009504913A5 - - Google Patents
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- Publication number
- JP2009504913A5 JP2009504913A5 JP2008526108A JP2008526108A JP2009504913A5 JP 2009504913 A5 JP2009504913 A5 JP 2009504913A5 JP 2008526108 A JP2008526108 A JP 2008526108A JP 2008526108 A JP2008526108 A JP 2008526108A JP 2009504913 A5 JP2009504913 A5 JP 2009504913A5
- Authority
- JP
- Japan
- Prior art keywords
- ruthenium
- complex
- represented
- exposing
- deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 claims description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- 239000012327 Ruthenium complex Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000003446 ligand Substances 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- ZSBDPRIWBYHIAF-UHFFFAOYSA-N N-acetyl-acetamide Natural products CC(=O)NC(C)=O ZSBDPRIWBYHIAF-UHFFFAOYSA-N 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- GXZZJBFGPNHSMR-UHFFFAOYSA-N n'-ethanimidoylethanimidamide Chemical compound CC(=N)NC(C)=N GXZZJBFGPNHSMR-UHFFFAOYSA-N 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 5
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 2
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo(3.3.1)nonane Chemical compound C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- KZWJWYFPLXRYIL-UHFFFAOYSA-N 1,1,2,2-tetrafluoroethanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)F KZWJWYFPLXRYIL-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- BPEVHDGLPIIAGH-UHFFFAOYSA-N ruthenium(3+) Chemical compound [Ru+3] BPEVHDGLPIIAGH-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70649305P | 2005-08-08 | 2005-08-08 | |
| PCT/US2006/030712 WO2007019437A1 (en) | 2005-08-08 | 2006-08-07 | Atomic layer deposition of ruthenium-containing films using surface-activating agents and selected ruthenium complexes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009504913A JP2009504913A (ja) | 2009-02-05 |
| JP2009504913A5 true JP2009504913A5 (enExample) | 2009-09-24 |
Family
ID=37113511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008526108A Abandoned JP2009504913A (ja) | 2005-08-08 | 2006-08-07 | 表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7632351B2 (enExample) |
| EP (1) | EP1913174A1 (enExample) |
| JP (1) | JP2009504913A (enExample) |
| KR (1) | KR20080038209A (enExample) |
| TW (1) | TW200720467A (enExample) |
| WO (1) | WO2007019437A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5234718B2 (ja) * | 2007-03-26 | 2013-07-10 | 株式会社アルバック | 半導体装置の製造方法 |
| US20090087339A1 (en) * | 2007-09-28 | 2009-04-02 | Asm Japan K.K. | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR |
| US8124528B2 (en) | 2008-04-10 | 2012-02-28 | Micron Technology, Inc. | Method for forming a ruthenium film |
| US8163341B2 (en) | 2008-11-19 | 2012-04-24 | Micron Technology, Inc. | Methods of forming metal-containing structures, and methods of forming germanium-containing structures |
| US8962876B2 (en) | 2009-05-15 | 2015-02-24 | Wayne State University | Thermally stable volatile film precursors |
| US9822446B2 (en) | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
| WO2012027357A2 (en) | 2010-08-24 | 2012-03-01 | Wayne State University | Thermally stable volatile precursors |
| WO2013006242A1 (en) * | 2011-07-06 | 2013-01-10 | Wayne State University | Atomic layer deposition of transition metal thin films |
| TWI551708B (zh) * | 2011-07-22 | 2016-10-01 | 應用材料股份有限公司 | 使用金屬前驅物之原子層沉積法 |
| US8747947B2 (en) * | 2011-09-16 | 2014-06-10 | Empire Technology Development, Llc | Graphene defect alteration |
| WO2013039508A1 (en) | 2011-09-16 | 2013-03-21 | Empire Technology Development Llc | Alteration of graphene defects |
| US20130146468A1 (en) * | 2011-12-08 | 2013-06-13 | Applied Materials, Inc. | Chemical vapor deposition (cvd) of ruthenium films and applications for same |
| US8907115B2 (en) | 2012-12-10 | 2014-12-09 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition |
| US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
| US9157149B2 (en) | 2013-06-28 | 2015-10-13 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| US9249505B2 (en) | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| US9994954B2 (en) * | 2013-07-26 | 2018-06-12 | Versum Materials Us, Llc | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
| CN109923119B (zh) | 2016-11-08 | 2022-03-18 | 株式会社Adeka | 化合物、薄膜形成用原料、薄膜的制造方法和脒化合物 |
| TWI871083B (zh) | 2018-06-27 | 2025-01-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
| US10615037B2 (en) * | 2018-08-17 | 2020-04-07 | International Business Machines Corporation | Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition |
| US11821070B2 (en) | 2019-11-11 | 2023-11-21 | Applied Materials, Inc. | Ruthenium film deposition using low valent metal precursors |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA752093B (en) * | 1975-04-03 | 1976-03-31 | Swarsab Mining | The separation and/or purification of precious metals |
| US6208003B1 (en) * | 1997-09-26 | 2001-03-27 | Nippon Steel Corporation | Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film |
| US6458183B1 (en) * | 1999-09-07 | 2002-10-01 | Colonial Metals, Inc. | Method for purifying ruthenium and related processes |
| US7094690B1 (en) * | 2000-08-31 | 2006-08-22 | Micron Technology, Inc. | Deposition methods and apparatuses providing surface activation |
| US6875518B2 (en) * | 2000-10-18 | 2005-04-05 | Jsr Corporation | Ruthenium film, ruthenium oxide film and process for forming the same |
| KR20040077733A (ko) * | 2002-01-18 | 2004-09-06 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 원자층 증착에 의한 구리막 증착용 휘발성 구리(ⅱ) 착물 |
| US6824816B2 (en) * | 2002-01-29 | 2004-11-30 | Asm International N.V. | Process for producing metal thin films by ALD |
| US7264846B2 (en) * | 2002-06-04 | 2007-09-04 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| AU2003282836A1 (en) | 2002-10-15 | 2004-05-04 | Rensselaer Polytechnic Institute | Atomic layer deposition of noble metals |
| US20050085031A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
| US7309658B2 (en) * | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
| EP1877592A2 (en) * | 2005-04-21 | 2008-01-16 | Honeywell International Inc. | Novel ruthenium-based materials and ruthenium alloys, their use in vapor deposition or atomic layer deposition and films produced therefrom |
| US20070077750A1 (en) * | 2005-09-06 | 2007-04-05 | Paul Ma | Atomic layer deposition processes for ruthenium materials |
| US20070054487A1 (en) * | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Atomic layer deposition processes for ruthenium materials |
| US7625814B2 (en) * | 2006-03-29 | 2009-12-01 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
-
2006
- 2006-08-01 US US11/497,858 patent/US7632351B2/en not_active Expired - Fee Related
- 2006-08-07 JP JP2008526108A patent/JP2009504913A/ja not_active Abandoned
- 2006-08-07 WO PCT/US2006/030712 patent/WO2007019437A1/en not_active Ceased
- 2006-08-07 KR KR1020087005706A patent/KR20080038209A/ko not_active Withdrawn
- 2006-08-07 EP EP06789514A patent/EP1913174A1/en not_active Withdrawn
- 2006-08-08 TW TW095129057A patent/TW200720467A/zh unknown
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