EP0978114A4 - Structure de pixel a diode luminescente a matrice active et procede - Google Patents

Structure de pixel a diode luminescente a matrice active et procede

Info

Publication number
EP0978114A4
EP0978114A4 EP98918744A EP98918744A EP0978114A4 EP 0978114 A4 EP0978114 A4 EP 0978114A4 EP 98918744 A EP98918744 A EP 98918744A EP 98918744 A EP98918744 A EP 98918744A EP 0978114 A4 EP0978114 A4 EP 0978114A4
Authority
EP
European Patent Office
Prior art keywords
transistor
coupled
gate
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98918744A
Other languages
German (de)
English (en)
Other versions
EP0978114A1 (fr
Inventor
Robin Mark Adrian Dawson
Michael Gillis Kane
James Ya-Kong Hsu
Fu-Lung Hsueh
Alfred Charles Ipri
Roger Green Stewart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarnoff Corp
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/064,696 external-priority patent/US6229506B1/en
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Publication of EP0978114A1 publication Critical patent/EP0978114A1/fr
Publication of EP0978114A4 publication Critical patent/EP0978114A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/04—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions
    • G09G3/06—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources
    • G09G3/10—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources using gas tubes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • G09G3/325—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing

Definitions

  • the invention relates to an active matrix light emitting diode pixel structure. More particularly, the invention relates to a pixel structure that reduces current nonuniformities and threshold voltage variations in a "drive transistor" of the pixel structure and method of operating said active matrix light emitting diode pixel structure.
  • a typical display 100 comprises a plurality of picture or display elements (pixels) 160 that are arranged in rows and columns.
  • the display incorporates a column data generator 110 and a row select generator 120.
  • each row is sequentially activated via row line 130, where the corresponding pixels are activated using the corresponding column lines 140.
  • each row of pixels is illuminated sequentially one by one, whereas in an active matrix display, each row of pixels is first loaded with data sequentially.
  • LCD liquid crystal display
  • LED light-emitting diode
  • LCD liquid crystal display
  • LED light-emitting diode
  • a fluorescent backlight is on for the entire duration in which the display is in use, thereby dissipating power even for "off pixels.
  • a LED (or OLED) display only illuminates those pixels that are activated, thereby conserving power by not having to illuminate "off 1 pixels.
  • a display that employs an OLED pixel structure can reduce power consumption, such pixel structure may exhibit nonuniformity in intensity, which is attributable to two sources, threshold voltage drift of the drive transistor and transistor nonuniformity due to manufacturing.
  • the brightness of the OLED is proportional to the current passing through the OLED. Therefore, a need exists in the art for a pixel structure and concomitant method that reduces current nonuniformities and threshold voltage variations in a "drive transistor" of the pixel structure.
  • a current source is incorporated in a LED (OLED) pixel structure that reduces current nonuniformities and threshold voltage variations in a "drive transistor" of the pixel structure.
  • the current source is coupled to the data line, where a constant current is initially programmed and then captured.
  • the constant current is achieved by initially applying a reference voltage in an auto-zero phase that determines and stores an auto zero voltage. The auto zero voltage effectively accounts for the threshold voltage of the drive transistor.
  • a data voltage which is referenced to the same reference voltage is now applied to illuminate the pixel.
  • a resistor is incorporated in a LED (OLED) pixel structure to desensitize the dependence of the current passing through the OLED to the threshold voltage of the drive transistor.
  • FIG. 1 depicts a block diagram of a matrix addressing interface
  • FIG. 2 depicts a schematic diagram of an active matrix LED pixel structure of the present invention
  • FIG. 3 depicts a schematic diagram of an alternate embodiment of the present active matrix LED pixel structure
  • FIG. 4 depicts a schematic diagram of another alternate embodiment of the present active matrix LED pixel structure
  • FIG. 5 depicts a block diagram of a system employing a display having a plurality of active matrix LED pixel structures of the present invention
  • FIG. 6 depicts a schematic diagram of an alternate embodiment of the active matrix LED pixel structure of FIG. 2;
  • FIG. 7 depicts a schematic diagram of an alternate embodiment of an active matrix LED pixel structure of the present invention.
  • FIG. 2 depicts a schematic diagram of an active matrix LED pixel structure 200 of the present invention.
  • the active matrix LED pixel structure is implemented using thin film transistors (TFTs), e.g., transistors manufactured using amorphous or poly-silicon.
  • TFTs thin film transistors
  • the active matrix LED pixel structure incorporates an organic light-emitting diode (OLED).
  • OLED organic light-emitting diode
  • the present pixel structure is implemented using thin film transistors and an organic light-emitting diode, it should be understood that the present invention can be implemented using other types of transistors and light emitting diodes. For example, if transistors that are manufactured using other materials exhibit the threshold nonuniformity as discussed above, then the present invention can be employed to provide a constant current through the lighting element.
  • the present invention is illustrated below as a single pixel or pixel structure, it should be understood that the pixel can be employed with other pixels, e.g., in an array, to form a display.
  • the figures below illustrate specific transistor configuration, it should be understood that the source of a transistor is relative to the voltage sign.
  • pixel structure 200 comprises three PMOS
  • a select line 210 is coupled to the gate of transistors 240, 250 and 270.
  • a data line is coupled to the source of transistor 250 and a +V DD line is coupled to the drain of transistor 270.
  • One electrode of the OLED 290 is coupled to the drain of transistors 240 and
  • the source of transistor 240 is coupled to the gate of transistor 260 and to one terminal of capacitor 280. Finally, the drain of transistor 250, the source of transistor 270, the source of transistor 260 and one terminal of the capacitor 280 are all coupled together.
  • the present pixel structure 200 provides a uniform current drive in
  • V t threshold voltage
  • the OLED pixel structure is operated in two phases, a load data phase and a continuous illuminating phase.
  • a pixel structure 200 can be loaded with data by activating the proper select line 210. Namely, when the select line is set to "Low”, transistor P4 (240) is turned “On”, where the voltage on the anode side of
  • the OLED 290 is transmitted to the gate of the transistor P2 (260).
  • transistor PI (250) is also turned “ON" so that the constant current from the data line 220 flows through both the transistor P2 (260) and the OLED 290. Namely, the transistor 260 must turn on to sink the current that is being driven by the current source 230.
  • the current source 230 The current source
  • 30 230 that drives the data line is programmed by external data.
  • the gate to source voltage of transistor 260 (drive transistor) will then settle to a voltage that is necessary to drive the current.
  • transistor Nl (270) is turned “Off, thereby disconnecting the power supply +V DD from the OLED 290.
  • the constant current source 230 will also self-adjust the source-to-gate voltage to accommodate a fixed overdrive value (voltage) for transistor 260 and will compensate the threshold variation on the polysilicon TFT 260.
  • the overdrive voltage is representative of the data.
  • the data is properly stored on the storage capacitor Cs 280. This completes the load or write cycle for the data.
  • both transistors of PI (250) and P4 (240) are turned “Off and the transistor Nl (270) is turned “On”.
  • the source voltage of the transistor 260 may vary slightly, the source-to-gate voltage of the transistor 260 controls the current level during the illumination cycle.
  • the Vsg of transistor 270 across the capacitor 280 cannot change instantaneously.
  • the gate voltage on transistor 260 will track with its source voltage such that the source-to- gate voltage is maintained the same throughout the entire Load and
  • the leakage current of polysilicon TFT and voltage resolution required for gray scale luminance of OLED will determine the size of storage capacitor needed for holding a valid data for a frame time.
  • the capacitor is on the order of approximately .25 pf. Namely, the capacitor must be large enough to account for the current leakage of transistor 260. This completes the pixel operation for the illumination phase.
  • each data/column line 220 has its own programmed constant current source 230.
  • the subsequent programmed current source on the data lines feeds through and loads the next rows of all pixels, while the pixels of previous rows are operating in the illumination phase for the whole frame time.
  • this pixel structure of FIG. 2 requires only 3 PMOS transistors and 1 NMOS transistor with 2.5 lines, (select line, data line-current source and VDD voltage supply which can be shared with adjacent pixels).
  • FIG. 6 illustrates an implementation where the pixel structure of FIG. 2 is implemented with all PMOS transistors, which will provide economy for using either PMOS or NMOS processes only.
  • the NMOS transistor Nl is replaced with a PMOS P3 transistor 610.
  • an additional line (control line) 620 is coupled to the gate of transistor 610 for addressing the additional PMOS transistor, thereby requiring a total of 3.5 lines, i.e., an additional voltage supply for controlling the additional PMOS gate.
  • the pixel structures of FIG. 2 and FIG. 6 are designed to compensate the threshold variation of both polysilicon TFT and the OLED by self-adjusting/tracking mechanism on Vsg of transistor 260 and by supplying a constant current source through the OLED 290.
  • the pixel structures of FIG. 2 and FIG. 6 are able to accomplish proper operation during both Load and Illumination phases with hard voltage supply.
  • These pixel structures can be implemented to design high-quality OLED displays with good gray scale uniformity and high lifetime despite instabilities in either the OLED or the pixel polysilicon TFT.
  • FIG. 3 illustrates an alternate embodiment of the present active matrix pixel structure.
  • pixel structure 300 comprises four PMOS transistors (360, 365, 370, 375) , two capacitors 350 and 355 and a LED (OLED) 380.
  • a select line 320 is coupled to the gate of transistor 360.
  • a data line 310 is coupled to the source of transistor 360 and a +V DD line is coupled to the source of transistor 365 and one terminal of capacitor 355.
  • An auto-zero line 330 is coupled to the gate of transistor 370 and an illuminate line is coupled to the gate of transistor 375.
  • One electrode of the OLED 280 is coupled to the drain of transistor 375.
  • the source of transistor 375 is coupled to the drain of transistors 365 and 370.
  • the drain of transistor 360 is coupled to one terminal of capacitor 350.
  • the gate of transistor 365, the source of transistor 370, one terminal of the capacitor 350 and one terminal of the capacitor 355 are all coupled together.
  • FIG. 3 illustrates a pixel structure 300 that is operated in three phases: 1) an auto-zero phase, 2) a load data phase and 3) an illuminating phase.
  • Auto-Zero :
  • the illuminate line 340 is set to "High", so that transistor P2 375 is turned “Off.
  • the pixel circuit now settles to a threshold of the transistor PI 365 (drive transistor), thereby storing a voltage (an auto-zero voltage) that is the difference between the reference voltage on the data line and the threshold voltage of the transistor PI 365 on the capacitor C c 350.
  • This sets the gate voltage, or more accurately VSG of transistor 365 to the threshold voltage of transistor 365.
  • This, in turn, will provide a fixed overdrive voltage on transistor PI (365) regardless of its threshold voltage variation.
  • Auto Zero line 330 is set to "High", which isolates the gate of transistor PI 365. The purpose of auto-zero is henceforth accomplished.
  • the select line was set "Low” and the data line was at a "reference voltage”. Now, the data line 310 is set to a data voltage. This data voltage is transmitted through capacitor C c 350 onto the gate of transistor PI (365). Next, the select line is set "High”. Thus, the NSG of transistor 365 provides transistor 365 with a fixed overdrive voltage for providing a constant current level. This completes the load data phase and the pixel is for illumination.
  • the illuminate line 340 is set to "Low”, thereby turning "On” transistor P2 375.
  • the current supplied by the transistor PI 365 is allowed to flow through the OLED 380.
  • the transistor 365 behaves like a constant current source. This completes the Illumination phase.
  • FIG. 4 illustrates another alternate embodiment of the present active matrix pixel structure.
  • the data line voltage is also converted into a current within the pixel structure without the need of a voltage-to-current converter such as the implementation of a current source as discussed above in FIGs. 2, and 6.
  • pixel structure 400 comprises three PMOS transistors (445, 460, 465) , two capacitors 450 and 455 and a LED (OLED) 470.
  • a select line 420 is coupled to the gate of transistor 445.
  • a data line 410 is coupled to the source of transistor 445 and a VSWP line is coupled to the source of transistor 460 and one terminal of capacitor 455.
  • An auto- zero line 430 is coupled to the gate of transistor 465.
  • One electrode of the OLED 470 is coupled to the drain of transistors 465 and 460.
  • the drain of transistor 445 is coupled to one terminal of capacitor 450.
  • the gate of transistor 460, the source of transistor 465, one terminal of the capacitor 450 and one terminal of the capacitor 455 are all coupled together.
  • FIG. 4 illustrates a pixel structure 400 that is also operated in three phases: 1) an auto-zero phase, 2) a load data phase and 3) an illuminating phase.
  • VSWP voltage switching supply
  • ⁇ V the lower voltage
  • the lower voltage is coupled through onto the gate of transistor PI (460) VG(Pl) without dilution due to the floating node between the transistor P4 (445) and C c (450) coupling capacitor.
  • Auto Zero line 430 is then set to "Low”
  • the transistor PI (460) (drive transistor) is temporarily connected as a diode by closing the transistor P3 (465).
  • the select line 420 is then set to "Low” and a "reference voltage” is applied on the data line 410.
  • the reference voltage can be arbitrarily set, but it must be greater than the highest data voltage.
  • the pixel circuit is now allowed to settle to the threshold of transistor PI 460.
  • Auto Zero line 430 is then set to "High", which isolates the gate of transistor PI 460.
  • the effect of this Auto Zero phase is to store on the capacitor C c 450 a voltage (an auto-zero voltage) that represents the difference between the reference voltage on the data line and the transistor threshold voltage of PI 460. This completes the auto-zero phase.
  • the select line was set "Low” and the data line was at a "reference voltage”.
  • the data line is then switched from a reference voltage to a lower voltage (data voltage) where the change in the data is referenced to the data.
  • the data voltage (data input) is load coupled through capacitors 450 and 455 to the gate of transistor PI 460.
  • the voltage VSG of the transistor 460 provides the transistor PI (460) with a fixed overdrive voltage to drive the current for the OLED 470. Namely, the data voltage will be translated into an overdrive voltage on transistor PI 460. Since the voltage stored on the capacitor 450 accounts for the threshold voltage of the transistor PI 460, the overall overdrive voltage is now independent of the threshold voltage of the transistor PI.
  • the select line 420 is then set "High". This completes the load data phase.
  • the gate of transistor PI 460 is now isolated except for its capacitive connections, where the overdrive voltage for driving the OLED is stored on capacitor C s 455.
  • the VSWP is returned to its original higher voltage (illuminate voltage).
  • This source-to-gate voltage VSG(Pl) is maintained in the same manner throughout the entire Illumination phase, which means the current level through the OLED will be constant. This completes the Illumination cycle.
  • FIG. 3 discloses a pixel structure that uses 4 PMOS transistors and 1 coupling capacitor with 3 1/2 lines. ( Auto-Zero line and VDDH voltage supply can both be shared).
  • FIG. 4 discloses a pixel structure that uses only 3 PMOS transistors and 1 coupling capacitor with 21/2 line. ( VSWP switching power supply could be share with adjacent pixel ) Both of these two pixel structures can compensate the threshold variation of both polysilicon TFT and OLED by illuminating and auto-zero trickling current mechanism on VsG(Pl)-
  • the aforementioned two ( 2 ) pixel structures can also be implemented in polysilicon NMOS and in amorphous NMOS design.
  • FIG. 7 depicts a schematic diagram of an active matrix LED pixel structure 700 of the present invention.
  • the active matrix LED pixel structure is implemented using thin film transistors (TFTs), e.g., transistors manufactured using poly-silicon or amorphous silicon.
  • TFTs thin film transistors
  • the active matrix LED pixel structure incorporates an organic light-emitting diode (OLED).
  • the present pixel structure 700 provides a uniform current drive in the presence of a large threshold voltage (V t ) nonuniformity. In other words, it is desirable to maintain a uniform current through the OLEDs, thereby ensuring uniformity in the intensity of the display.
  • V t threshold voltage
  • pixel structure 700 comprises two PMOS transistors 710 and 720, a capacitor 730, a resistor 750 and a LED (OLED) 740 (light element).
  • a select line 770 is coupled to the gate of transistor 710.
  • a data line 760 is coupled to the source of transistor 710.
  • One terminal of resistor 750 is coupled to the source of transistor 720 and one electrode of the OLED 740 is coupled to the drain of transistor 720.
  • the drain of transistor 710, the gate of transistor 720 and one terminal of the capacitor 730 are all coupled together.
  • a logical "high" level on the select line 770 turns on transistor Ml 710, thereby allowing capacitor C 730 to be charged to a voltage V g from the data line 760.
  • the voltage on the capacitor 730 is stored for the frame time. Since this voltage appears on the gate of transistor M2 720, it sets a current through transistor 720 that also passes through the OLED 740, which is located in the drain of the transistor 720.
  • a resistor 750 is implemented in the present pixel structure.
  • the resistor is coupled to the source of transistor 720 and serves as a negative feedback element. If an individual drive transistor has an unusually low threshold voltage, the transistor tends to pass more current to the OLED, but the additional current causes an additional voltage drop across the resistor 750, thereby reducing the current.
  • the overall effect is to reduce the nonuniformity in the current. It has been observed that resistors can be generally formed with much better resistance uniformity than the threshold voltage uniformity achieved with TFTs.
  • TFT threshold voltages are very sensitive to the trap density in the active silicon material, whereas the resistance of the doped layers used in resistors is much less sensitive to trap density. Measurements have shown that the percentage variation of resistance is very small across a polysilicon display wafer, and to the extent that resistance does vary, it is expected to be smoothly varying, unlike transistor thresholds.
  • the current passing through the OLED 740 determines its brightness.
  • the threshold voltages of the TFTs can also vary over life as discussed above.
  • variations in the threshold voltage of drive transistor 720 directly affect the current through the OLED. More specifically, the current, I 0LED passing through the OLED in the present pixel structure can be expressed as:
  • I ⁇ LED (V g - V, - I OLED R) 2 (1)
  • K' is the intrinsic transconductance parameter of the transistor M2
  • W and L are its width and length
  • Vt is its threshold voltage
  • V g is the voltage from the data line
  • resistor R 750 has a value of 1M in the preferred embodiment.
  • the resistor value may range from 100K to 10M depending on the drive transistor characteristics. It has been observed that the present pixel structure may reduce the current variation to 1/3 of what is possible without the present resistor as discussed below.
  • FIG. 5 illustrates a block diagram of a system 500 employing a display 520 having a plurality of active matrix LED pixel structures 200, 300, 400, 600 or 700 of the present invention.
  • the system 500 comprises a display controller 510 and a display 520.
  • the display controller can be implemented as a general purpose computer having a central processing unit CPU 512, a memory 514 and a plurality of I/O devices 416 (e.g., a mouse, a keyboard, storage devices, e.g., magnetic and optical drives, a modem and the like).
  • Software instructions for activating the display 520 can be loaded into the memory 514 and executed by the CPU 512.
  • the display 520 comprises a pixel interface 522 and a plurality of pixels (pixel structures 200, 300, 400, 600 or 700).
  • the pixel interface 522 contains the necessary circuitry to drive the pixels 200, 300, 400, 600 or 700.
  • the pixel interface 522 can be a matrix addressing interface as illustrated in FIG. 1.
  • the system 500 can be implemented as a laptop computer.
  • the display controller 510 can be implemented in other manners such as a microcontroller or application specific integrated circuit (ASIC) or a combination of hardware and software instructions.
  • the system 500 can be implemented within a larger system that incorporates a display of the present invention.
  • the present invention is described using PMOS transistors, it should be understood that the present invention can be implemented using NMOS transistors, where the relevant voltages are reversed. Namely, the OLED is now coupled to the source of the NMOS drive transistor. By flipping the OLED, the cathode of the OLED should be made with a transparent material.

Abstract

L'invention concerne une structure de pixel à DEL (200, 300, 400, 600, 700) qui réduit les non-uniformités de courant et les changements de tension de seuil dans un 'transistor d'attaque' de la structure de pixel. La structure de pixel à DEL comprend une source de courant pour charger les données dans le pixel par l'intermédiaire d'une ligne de données. Une tension à correction automatique du zéro est déterminée pour le transistor d'attaque avant le chargement des données.
EP98918744A 1997-04-23 1998-04-23 Structure de pixel a diode luminescente a matrice active et procede Withdrawn EP0978114A4 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US4417497P 1997-04-23 1997-04-23
US44174P 1997-04-23
US6469798A 1998-04-22 1998-04-22
US64696 1998-04-22
US64697 1998-04-22
US09/064,696 US6229506B1 (en) 1997-04-23 1998-04-22 Active matrix light emitting diode pixel structure and concomitant method
PCT/US1998/008367 WO1998048403A1 (fr) 1997-04-23 1998-04-23 Structure de pixel a diode luminescente a matrice active et procede

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EP0978114A1 EP0978114A1 (fr) 2000-02-09
EP0978114A4 true EP0978114A4 (fr) 2003-03-19

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JP (1) JP4251377B2 (fr)
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WO (1) WO1998048403A1 (fr)

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JP4251377B2 (ja) 2009-04-08
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KR100559078B1 (ko) 2006-03-13
EP0978114A1 (fr) 2000-02-09
JP2002514320A (ja) 2002-05-14
WO1998048403A1 (fr) 1998-10-29

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