CN104838479B - 硅-碳-氮化物的选择性蚀刻 - Google Patents

硅-碳-氮化物的选择性蚀刻 Download PDF

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CN104838479B
CN104838479B CN201380048686.5A CN201380048686A CN104838479B CN 104838479 B CN104838479 B CN 104838479B CN 201380048686 A CN201380048686 A CN 201380048686A CN 104838479 B CN104838479 B CN 104838479B
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陈智君
张景春
王安川
N·K·英格尔
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Abstract

兹描述蚀刻图案化异质结构上曝露的含‑硅‑氮‑和‑碳材料的方法，该方法包括由含氟前驱物和含氧前驱物形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，在基板处理区域该等离子体流出物与含‑硅‑氮‑和‑碳材料的曝露区域反应。该等离子体流出物与该图案化异质结构反应，以选择性地从该曝露的含‑硅‑氮‑和‑碳材料区域去除含‑硅‑氮‑和‑碳材料，同时非常缓慢地去除选定的其他曝露材料。该含‑硅‑氮‑和‑碳材料的选择性部分是由位于远程等离子体和基板处理区域之间的离子抑制元件的存在所致。该离子抑制元件控制到达基板的离子性带电物种的数量。可以使用该方法来以比曝露的氧化硅或曝露的氮化硅更快的速率选择性地去除含‑硅‑氮‑和‑碳材料。

Description

硅-碳-氮化物的选择性蚀刻
相关申请的交叉引用
本申请主张于2012年09月20日提出申请且标题为“硅-碳-氮化物的选择性蚀刻(SILICON-CARBON-NITRIDE SELECTIVE ETCH)”的美国临时专利申请案第61/703,612号的优先权权益，为了所有的目的将该申请案以引用方式全部并入本文中。
背景技术
集成电路能够被制作出是藉由在基板表面上产生错综复杂的图案化材料层的工艺。在基板上产生图案化材料需要控制的方法，以去除曝光的材料。化学蚀刻被用于各式各样的目的，包括将光阻中的图案转入下面的层、减薄层或者减小已经存在表面上的特征的横向尺寸。往往理想的是拥有一种蚀刻一种材料的速度比蚀刻另一种材料的速度更快的蚀刻工艺，以有助于例如图案转移工艺进行。这样的蚀刻工艺即所谓的对第一种材料有选择性。材料、电路及工艺具有多样性的结果是，已经开发出具有对各种材料的选择性的蚀刻工艺。然而，对于选择性地蚀刻硅碳氮化物的选择很少。
干式蚀刻工艺对于选择性地从半导体基板去除材料往往是理想的。此理想性源自于以最小的物理干扰和缓地从微型结构去除材料的能力。干式蚀刻工艺也允许通过去除气相试剂来突然停止蚀刻速率。某些干式蚀刻工艺牵涉到将基板曝露于由一个或更多个前驱物形成的远程等离子体副产物。例如，当等离子体流出物流入基板处理区域时，氨和三氟化氮的远程等离子体激发使得氧化硅可被选择性地从图案化基板去除。某些选择性的远程等离子体蚀刻工艺会产生固体副产物，当基板材料被去除时该固体副产物生长在基板的表面上。当后续基板的温度升高时，该固体副产物经由升华被去除。产生固体副产物的结果是，SiconiTM蚀刻工艺会使在被蚀刻材料的曝露区域中或附近形成的微细剩余结构变形。
一种理想地选择性去除硅-碳-氮化物的气相方法，且不会形成固体副产物。
发明内容
兹描述蚀刻图案化异质结构上曝露的含-硅-氮-和-碳材料的方法，该方法包括由含氟前驱物和含氧前驱物形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，在基板处理区域该等离子体流出物与含-硅-氮-和-碳材料的曝露区域反应。该等离子体流出物与该图案化异质结构反应，以选择性地从该曝露的含-硅-氮-和-碳材料区域去除含-硅-氮-和-碳材料，同时非常缓慢地去除选定的其他曝露材料。含-硅-氮-和-碳材料的选择性部分是由位于远程等离子体和基板处理区域之间的离子抑制元件的存在所致。该离子抑制元件控制到达基板的离子性带电物种的数量。可以使用该方法来以比曝露的氧化硅或曝露的氮化硅更快的速率选择性地去除含-硅-氮-和-碳材料。
本发明的实施例包括在基板处理腔室的基板处理区域中蚀刻图案化基板的方法。该图案化基板具有曝露的含-硅-氮-和-碳区域。该方法包含使含氟前驱物和含氧前驱物中的每一者流入流体耦接至该基板处理区域的远程等离子体区域，同时在该等离子体区域中形成等离子体，以产生等离子体流出物。该方法进一步包括通过使该等离子体流出物经由喷洒头中的通孔流入该基板处理区域而蚀刻该曝露的含-硅-氮-和-碳区域。
在以下的部分描述中提出另外的实施例与特征，而且对于本技术领域中具有通常知识者而言，在检视本说明书之后，部分的该等实施例与特征将变得显而易见，或者是可通过实施揭示的实施例而学习部分的这些实施例与特征。通过说明书中描述的手段、组合以及方法可实现及获得揭示的实施例的特征与优点。
附图说明
通过参照本说明书的剩余部分及附图可以实现对揭示的实施例的本质与优点的进一步了解。
图1为依据所揭示实施例的碳化硅选择性蚀刻工艺的流程图。
图2A图示依据本发明的实施例的基板处理腔室。
图2B图示依据本发明的实施例的基板处理腔室的喷洒头。
图3图示依据本发明的实施例的基板处理系统。
在附图中，相似的组件和/或特征可以具有相同的参考标号。此外，相同类型的各个组件可以通过在该参考标号之后接续破折号和第二标号来进行区分，该第二标号可以在类似的组件之间进行区分。假使只在说明书中使用第一参考标号，则该描述适用于任何一个具有相同第一参考标号的类似组件，而与第二参考标号无关。
具体实施方式
兹描述蚀刻图案化异质结构上曝露的含-硅-氮-和-碳材料的方法，该方法包括由含氟前驱物和含氧前驱物形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，在基板处理区域该等离子体流出物与含-硅-氮-和-碳材料的曝露区域反应。该等离子体流出物与该图案化异质结构反应，以选择性地从该曝露的含-硅-氮-和-碳材料区域去除含-硅-氮-和-碳材料，同时非常缓慢地去除选定的其他曝露材料。含-硅-氮-和-碳材料的选择性部分是远程等离子体和基板处理区域之间存在离子抑制元件所致。该离子抑制元件控制到达基板的离子性带电物种的数量。可以使用该方法来以比曝露的氧化硅或曝露的氮化硅更快的速率选择性地去除含-硅-氮-和-碳材料。
离子抑制元素的功能是减少或消除从等离子体产生区域前往基板的离子性带电物种。不带电的中性物种和自由基物种可以通过离子抑制器中的开口，以在基板发生反应。应该注意的是，完全消除基板周围的反应区域中的离子性带电物种并非总是所期望的目标。在许多情况下，需要离子物种到达基板，以进行蚀刻和/或沉积工艺。在这些情况下，离子抑制器有助于将反应区域中的离子物质浓度控制在可协助工艺的水平。
依据本发明的一些实施例，可以使用如示例性的设备部分中描述的离子抑制器来提供用于选择性地蚀刻基板的自由基和/或中性物种。例如在一个实施例中，使用离子抑制器来提供含氟和氧的等离子体流出物，以选择性地蚀刻含-硅-氮-和-碳材料。使用等离子体流出物可以得到高达约4000:1或以上的含-硅-氮-和-碳材料对氧化硅的蚀刻速率选择性。可以使用离子抑制器来提供自由基浓度比离子更高的反应气体。因为等离子体的大部分带电粒子被离子抑制器过滤或去除，所以在蚀刻工艺过程中基板通常没有偏压。使用自由基和其他中性物种的这种工艺与传统包括溅射和轰击的等离子体蚀刻工艺相比可以减少等离子体损伤。本发明的实施例也优于传统的湿式蚀刻工艺，传统的湿式蚀刻工艺中液体的表面张力会导致小的特征弯曲和剥离。
为了更好地了解和理解本发明，现在参照图1，图1为依据所揭示实施例的碳化硅选择性蚀刻工艺的流程图。硅碳氮化物是含-硅-氮-和-碳材料的实例。在第一操作之前，图案化基板中形成了结构。该结构具有分离的硅碳氮化物和氧化硅的曝露区域。然后基板被输送到处理区域(操作110)。
三氟化氮的流动被引入至与处理区域分开的等离子体区域(操作120)。可以使用其他来源的氟来增加或取代三氟化氮。一般情况下，可以使含氟前驱物流入等离子体区域，并且该含氟前驱物包含至少一选自于由原子氟、双原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氢、六氟化硫及二氟化氙所组成的群组的前驱物。甚至可以将含碳前驱物，例如四氟化碳、三氟甲烷、二氟甲烷、氟甲烷及诸如此类添加到已列出的群组中。使用含碳前驱物通常需要流量增加的本文所述含氧前驱物。本文中可以将分离的等离子体区域称为远程等离子体区域，而且该分离的等离子体区域可以在与处理腔室不同的模块内或在该处理腔室内的隔室内。也使氧气(O2)流入等离子体区域(操作125)，其中氧气在等离子体中与三氟化氮一起被激发。一般来说，可以使含氧前驱物流入等离子体区域，并且该含氧前驱物可以包含至少一选自O2、O3、N2O、NO、NO2或诸如此类的前驱物。
本发明的实施例保持高的氧(O)对氟(F)原子流量比，以实现含-硅-氮-和-碳薄膜本身在制造中使用的蚀刻速率。本质上，氧的存在有助于从含-硅-氮-和-碳薄膜清除碳。在一个实施例中，发现在1:1和4:1之间的气体流量比(O2:NF3)，或更一般地是在2:3和8:3之间的原子流量比(O:F)实现了/分钟或更高的可制造蚀刻速率。在不同的实施例中，本发明也可以利用在约0.5:1或以上的O:F比、在约1:1或以上的O:F比或在约2:1或以上的O:F比。在本发明的实施例中，O:F原子流量比可以为低于或约10:1、低于或约6:1、低于或约5:1或低于或约4:1。原子流量比的上限可以与下限组合，以形成其他的实施例。更高的范围通常用于含有碳的含氟前驱物。更一般的O:F原子流量比计算自每个前驱物气体的气体流动速率和每个分子中每种原子的总数。在一种前驱物是O2且另一种前驱物是NF3的实施例中，每个氧分子包括两个氧原子，而每个三氟化氮分子包括3个氟原子。使用质量流量控制器来保持例如1:1以上的气体流量比将产生2:3以上的原子流量比。在另一个实施例中，前驱物气体包括至少一种同时含有氧和氟的气体。计算原子流量比时所有贡献者的原子流动速率都被包括在内。
然后远程等离子体区域中形成的等离子体流出物流入基板处理区域(操作130)。图案化基板被选择性地蚀刻(操作135)，使得曝露的硅碳氮化物以比曝露的氧化硅大至少20倍的速率被去除。反应性化学物种被从基板处理区域去除，然后从处理区域移出基板(操作145)。进入等离子体中的氧气流(O2)和产生的进入基板处理区域的含氧激发物种流使得等离子体流出物中的含氟激发物种去除硅碳氮化物。进入基板处理区域的含氧激发物种流对氧化硅的曝露区域影响不大，所以含氟激发物种基本上无法蚀刻氧化硅区域。在蚀刻操作过程中，该基板处理区域是无等离子体的，以确保含-硅-氮-和-碳层的高蚀刻选择性。
使用含氧前驱物增加了硅碳氮化物的蚀刻速率，且对氧化硅的蚀刻速率有最小的影响。含氟前驱物和/或含氧前驱物可以进一步包括一种或更多种相对惰性的气体，例如He、N2、Ar或诸如此类。惰性气体可用于改善等离子体的稳定性。可以使用不同气体的流动速率和比例来控制蚀刻速率和蚀刻选择性。在一实施例中，含氟气体包括流动速率在约5sccm和300sccm之间的NF3、流动速率在约5sccm和1500sccm之间的O2、流动速率在约0sccm和3000sccm之间的He以及流动速率在约0sccm和3000sccm之间的Ar。本技术领域中具有通常知识者将理解的是，其他气体和/或流量的使用可以取决于多个因素，包括处理腔室的架构、基板的尺寸、几何形状及被蚀刻特征的布局以及诸如此类。一些含氢前驱物也可以与其他的前驱物相结合或分别流入等离子体区域，然而应保持低的浓度。氢可以在等离子体中与含氟前驱物相互作用以形成前驱物，而通过在氧化物表面上形成固体残余副产物来去除氧化硅。与曝露的氧化硅区域相比，此反应降低了曝露的硅碳氮化物区域的选择性。在一些实施例中，虽然引入一些氢可能是有用的，但在揭示的实施例中，在蚀刻工艺的过程中也可能没有或基本上没有含氢前驱物流入等离子体区域。在本发明的实施例中，含氟前驱物和等离子体流出物可以是基本上没有氢的。
该方法还包括当含氟前驱物和含氧前驱物在远程等离子体区域中时施加能量给含氟前驱物和含氧前驱物来产生等离子体流出物。如本技术领域中具有通常知识者可理解的，等离子体可以包括许多带电的和中性的物种，包括自由基和离子。可以使用已知的技术(例如射频(RF)、电容耦合、感应耦合及诸如此类)来产生等离子体。在一实施例中，能量是使用源功率在约10瓦和2000瓦之间且压力在约0.2托和30托之间的电容耦合等离子体单元来施加。电容耦合等离子体单元可以位于处理腔室的气体反应区域的远端。例如，电容耦合等离子体单元和等离子体产生区域可以通过离子抑制器与气体反应区域分离。
一些可能机制的讨论可以证明是有效益的，但不希望权利要求范围的涵盖面受到可能是完全正确或可能不是完全正确的理论机制所限制。通过输送含氟前驱物和含氧前驱物进入远程等离子体区域来同时产生自由基-氟前驱物和自由基-氧前驱物。申请人假设产生某浓度的自由基-氟片段、氟离子及原子并将上述自由基-氟片段、氟离子及原子输入基板处理区域。申请人进一步假设自由基-氧物种被同时输送到基板处理区域。自由基-氧物种可以在近表面区域与碳反应，以在硅碳氮化物区域的曝露表面附近产生富含硅的区域。在此反应过程中可能产生的挥发性物种可以包括二氧化碳(CO2)，然后可以经由流体耦接至基板处理区域的排气系统抽出二氧化碳。硅碳氮化物的富含硅近表面区域可以被基板处理区域内同时可用的自由基-氟前驱物蚀刻。氧化硅区域基本上不受自由基-氧影响。自由基-氟前驱物对硅具有高度的选择性，而留下基本上未被蚀刻的氧化硅。结果，本文概述的蚀刻方法对含-硅-氮-和-碳材料实现了选择性。一般来说，本文提出的蚀刻方法的选择性可以具有大于或约50:1、大于或约100:1、大于或约150:1或大于或约250:1的选择性(含-硅-氮-和-碳材料:氧化硅)。该选择性、非局部等离子体、控制的离子浓度及没有固体副产物中的每个皆使这些蚀刻工艺非常适用于以极少的变形来去除或修整微细的含-硅-氮-和-碳材料结构，并且同时去除极少的氧化硅或未去除氧化硅。这些选择性也普遍适用于即将要描述的含-硅-氮-和-碳材料。
除了或取代曝露的氧化硅区域，在本文的蚀刻操作过程中也可以是图案化基板上曝露的氮化硅区域。在本发明的实施例中，蚀刻操作的选择性(曝露的含-硅-氮-和-碳区域:曝露的氮化硅区域)可以是大于或约2:1、大于或约3:1或大于或约4:1。使用本文揭示的蚀刻工艺，碳化硅和硅碳氮化物的蚀刻速率较相似，而氮化硅和硅被更缓慢地蚀刻，如以上所量化。
基板的温度通常可以在约-30℃和约150℃之间。已经发现在此范围内的较低温度下蚀刻速率较高。在实施例中，在本文所述的蚀刻过程中，基板的温度可以是约0℃或更高、约5℃或更高或约10℃或更高。在不同的实施例中，基板温度可以是小于或约50℃、小于或约30℃、小于或约20℃、小于或约15℃或小于或约10℃。该数据进一步显示蚀刻速率的增加为工艺压力的函数。基板处理区域内的压力低于或约50托、低于或约30托、低于或约20托、低于或约10托或低于或约5托。在本发明的实施例中，压力可以是高于或约0.1托、高于或约0.2托、高于或约0.5托或高于或约1托。温度或压力的任何上限可以与下限组合，以形成另外的实施例。一般来说，可以使用本文所述的工艺来蚀刻含有硅和碳(不只是碳化硅)的薄膜。远程等离子体蚀刻工艺可以去除包括约30％或更高硅原子浓度的含-硅-氮-和-碳材料。在本发明的实施例中，含-硅-氮-和-碳材料中的碳原子浓度可以是大于或约10％、大于或约15％或大于或约20％。类似地，在本发明的实施例中，含-硅-氮-和-碳材料中的氮原子浓度可以是大于或约10％、大于或约15％或大于或约20％。除了杂质和掺杂剂之外，含-硅-氮-和-碳材料也可以仅由硅、氮及碳所组成。当然，在本发明的实施例中，含-硅-氮-和-碳材料可以是硅碳氮化物。
其他的工艺参数揭示描述示例性处理腔室和系统的过程中。
示例性处理系统
可以实施本发明的实施例的处理腔室可以被包括在处理平台内，该处理平台例如和系统，皆可向美国加州圣克拉拉市的应用材料公司(Applied Materials,Inc.of Santa Clara,Calif.)取得。可以与本发明的示例性方法一起使用的基板处理腔室的实例可以包括在2006年05月30日提出申请、标题为“用于介电质间隙填充的处理腔室(PROCESS CHAMBER FOR DIELECTRIC GAPFILL)”且共同受让给Lubomirsky等人的美国临时专利申请案第60/803,499号中所图示和描述者，为了所有的目的将该专利申请案的全部内容以引用方式并入本文中。另外的示例性系统可以包括美国专利第6,387,207号和第6,830,624号中所图示和描述者，为了所有的目的将这些专利以引用方式并入本文中。
图2A为依据所揭示实施例的基板处理腔室1001。远程等离子体系统1010可以处理含氟前驱物，然后该含氟前驱物经由气体入口组件1011前进。可以在气体入口组件1011内看到两个截然不同的气体供应通道。第一通道1012携带通过远端等离子体系统(RPS)1010的气体，而第二通道1013绕过远端等离子体系统1010。在实施例中可以将任一个通道使用于含氟前驱物。另一方面，第一通道1012可用于工艺气体，并且第二通道1013可用于处理气体。图示盖体(或导电顶部)1021和穿孔的分隔板1053之间具有绝缘环1024，绝缘环1024使得AC电势可被相对于穿孔的分隔板1053施加到盖体1021。AC电势在腔室等离子体区域1020中击发等离子体。工艺气体经由第一通道1012进入腔室等离子体区域1020，并且工艺气体可以在单独的或与远端等离子体系统1010组合的腔室等离子体区域1020中被等离子体激发。假使工艺气体(含氟前驱物)流经第二通道1013，则只有腔室等离子体区域1020用于激发。本文中可以将腔室等离子体区域1020和/或远程等离子体系统1010的组合称为远程等离子体系统。穿孔的分隔板(也可称为喷洒头)1053将腔室等离子体区域1020与喷洒头1053下方的基板处理区域1070分隔。喷洒头1053允许等离子体存在于腔室等离子体区域1020中，以避免在基板处理区域1070中直接激发气体，同时还允许激发的物种从腔室等离子体区域1020进入基板处理区域1070。
喷洒头1053被定位在腔室等离子体区域1020和基板处理区域1070之间，并允许远程等离子体系统1010和/或腔室等离子体区域1020内产生的等离子体流出物(前驱物或其他气体的激发衍生物)通过多个通孔1056，通孔1056穿过板材的厚度。喷洒头1053还具有一或更多个中空容积1051，中空容积1051可以被蒸汽或气体形式的前驱物填满，并通过小孔1055进入基板处理区域1070，但不是直接进入腔室等离子体区域1020。可以将中空容积1051用于不需要被等离子体激发的前驱物，以实现特定的工艺。在此揭示的实施例中，喷洒头1053的厚度比通孔1056的最小直径1050的长度更长。为了保持显著浓度的激发物种从腔室等离子体区域1020渗透到基板处理区域1070，可以通过形成部分贯穿喷洒头1053的通孔1056的较大直径部分来限制通孔的最小直径1050的长度226。在揭示的实施例中，通孔1056的最小直径1050的长度可以与通孔1056的最小直径属于相同数量级或更短。
如图2A所图示，喷洒头1053可被配置来提供离子抑制器的效用。或者，可以包括分离的处理腔室元件(未图示)，该处理腔室元件抑制流入基板处理区域1070的离子浓度。盖体1021和喷洒头1053可以分别发挥作为第一电极和第二电极的功能，所以盖体1021和喷洒头1053可以接收不同的电压。在这些设置中，可以将电功率(例如RF功率)施加于盖体1021、喷洒头1053或上述两者。例如，可以将电功率施加于盖体1021，同时将喷洒头1053(作为离子抑制器)接地。基板处理系统可以包括RF产生器，RF产生器提供电功率到盖体和/或喷洒头1053。施加于盖体1021的电压可以促进腔室等离子体区域1020内有均匀分布的等离子体(例如减少局部化等离子体)。为了能够在腔室等离子体区域1020中形成等离子体，绝缘环1024可以将盖体1021与喷洒头1053电绝缘。绝缘环1024可以由陶瓷制作并且可以具有高的击穿电压，以避免放电。方才所述靠近电容耦合等离子体组件的部分基板处理腔室1001可以进一步包括冷却单元(未图示)，该冷却单元包括一或更多个冷却流体通道，以使用循环冷却剂(例如水)冷却曝露于等离子体的表面。
在图示的实施例中，喷洒头1053可以(经由通孔1056)分配工艺气体，该工艺气体含有氧、氟和/或氮和/或该工艺气体在腔室等离子体区域1020中被等离子体激发之后的等离子体流出物。在实施例中，被引入远程等离子体系统1010和/或腔室等离子体区域1020的工艺气体可以含有氟(例如F2、NF3或XeF2)。该工艺气体还可以包括载送气体，例如氦气、氩气、氮气(N2)等。等离子体流出物可以包括工艺气体的离子化或中性衍生物，而且本文中还可以将等离子体流出物称为自由基-氟前驱物，以指称引入的工艺气体的原子组份。
通孔1056设以抑制离子化带电物种迁移出腔室等离子体区域1020，同时允许未带电的中性或自由基物种通过喷洒头1053进入基板处理区域1070。这些未带电的物种可以包括高度反应性物种，该等高度反应性物种被以反应性较低的载送气体经由通孔1056输送。如以上所注意的，可以减少离子物种经由通孔1056的迁移，而且在一些例子中可以完全抑制离子物种经由通孔1056迁移。控制离子物种通过喷洒头1053的量提供了对于被带入而与下方的晶圆基板接触的气体混合物的更多控制，进而增加了对于气体混合物的沉积和/或蚀刻特性的控制。例如，调整气体混合物的离子浓度可以明显改变气体混合物的蚀刻选择性(例如SiCx:SiOx的蚀刻比)。
在实施例中，通孔1056的数量可以在约60和约2000之间。通孔1056可以具有各种不同的形状，但最容易制作成圆形。在揭示的实施例中，通孔1056的最小直径1050可以在约0.5mm和约20mm之间，或在约1mm和约6mm之间。也有在选择通孔的横截面形状上的自由，该横截面形状可以是圆锥形、圆柱形或上述两种形状的组合。在不同的实施例中，用于将未激发前驱物导入基板处理区域1070的小孔1055的数量可以在约100和约5000之间，或在约500和约2000之间。小孔1055的直径可以在约0.1mm和约2mm之间。
通孔1056可设以控制等离子体活化气体(例如离子、自由基及/或中性物种)通过喷洒头1053。例如，可以控制孔的深宽比(例如孔径对长度)和/或孔的几何形状，使得通过喷洒头1053的活化气体中离子化带电物种的流量减少。喷洒头1053中的通孔1056可以包括面向腔室等离子体区域1020的锥形部分以及面向基板处理区域1070的圆柱形部分。可以订制该圆柱形部分的比例和尺寸，以控制进入基板处理区域1070的离子物种流量。还可以施加可调整的电偏压到喷洒头1053，以作为控制通过喷洒头1053的离子物种流量的额外手段。
或者，通孔1056可以在朝向喷洒头1053的顶部表面处具有较小的内径(ID)并且在朝向喷洒头1053的底部表面处具有较大的内径。此外，可以将通孔1056的底部边缘去角，以助于在等离子体流出物离开喷洒头时在基板处理区域1070中均匀地分配等离子体流出物，藉以促进等离子体流出物和前驱物气体的均匀分布。可以沿着通孔1056将较小的内径放在各个位置，并且仍允许喷洒头1053减少基板处理区域1070内的离子密度。离子密度的减少是在进入基板处理区域1070之前与墙壁的碰撞次数增加的结果。每个碰撞提高了离子因从墙壁取得或丧失电子而被中和的可能性。一般来说，通孔1056的较小内径可以在约0.2mm和约20mm之间。在其他实施例中，该较小内径可以在约1mm和约6mm之间或在约0.2mm和约5mm之间。此外，通孔1056的深宽比(即较小内径对孔长度)可以为约1至20。通孔的较小内径可以是沿着通孔的长度找到的最小内径。通孔1056的横截面形状通常可以是圆柱形的、圆锥形的或上述的任意组合。
图2B为依据揭示的实施例用于处理腔室的喷洒头1053的仰视图。喷洒头1053与图2A中图示的喷洒头一致。描绘的通孔1056在喷洒头1053的底部具有较大的内径(ID)，而且在喷洒头1053顶部具有较小的内径。小孔1055大致上均匀地分布在喷洒头的表面上，即使在通孔1056之间亦然，这有助于提供比本文所述的其他实施例更均匀的混合。
当含氟等离子体流出物和含氧等离子体流出物经由喷洒头1053中的通孔1056到达时，示例性的图案化基板可以由基座(未图示)支撑在基板处理区域1070内。虽然可以在基板处理区域1070装设用于支持其他工艺(例如固化)的等离子体的配备，但在本发明的实施例中，在图案化基板的蚀刻过程中并无等离子体存在。
等离子体可以在喷洒头1053上方的腔室等离子体区域1020中或喷洒头1053下方的基板处理区域1070中被点火。腔室等离子体区域1020中存在等离子体，以从含氟前驱物的进入流产生自由基-氟前驱物。在处理腔室的导电性顶部(盖体1021)和喷洒头1053之间施加通常在射频(RF)范围中的交流电压，以在沉积过程中在腔室等离子体区域1020中点火等离子体。RF电源产生13.56MHz的高射频频率，但也可能会产生单独的其他频率或与13.56MHz频率结合的其他频率。
当开启基板处理区域1070中的底部等离子体以固化薄膜或清洗邻接基板处理区域1070的内表面时，可以使顶部等离子体停留在很低或无功率下。通过在喷洒头1053和基座或腔室底部之间施加交流电压来点火基板处理区域1070中的等离子体。可以在等离子体存在的同时将清洗气体引入基板处理区域1070。
基座可以具有热交换通道，热交换流体经由该热交换通道流入，以控制基板的温度。这种架构允许基板温度被冷却或加热，以保持相对低温(从室温到约120℃)。热交换流体可以包含乙二醇和水。可以使用以平行同心圆形式配置成两个圈的嵌入式单回路嵌入式加热器元件来电阻式加热基座的晶圆支撑盘(较佳为铝、陶瓷或上述物质的组合)，以实现相对高温(约120℃至约1100℃)。加热器元件的外部可以与支撑盘的周边相邻，而加热器元件的内部沿着具有较小外径的同心圆路径。接到加热器元件的接线通过基座的底杆。
基板处理系统系由系统控制器所控制。在示例性的实施例中，该系统控制器包括硬盘驱动、软盘驱动及处理器。该处理器包含单板电脑(SBC)、模拟和数字输入/输出板、介面板及步进电机控制器板。CVD系统的各种部件符合Versa模件欧洲(Versa ModularEuropean,VME)标准，VME标准定义板、卡片机架以及连接器的尺寸和类型。VME标准还定义具有16位数据总线和24位地址总线的总线结构。
系统控制器控制蚀刻腔室的所有活动。该系统控制器执行系统控制软件，该系统控制软件为储存在电脑可读媒体中的电脑程序。较佳地，该媒体为硬盘驱动，但该媒体也可以是其他种类的存储器。该电脑程序包括指令组，该指令组指示时间、气体混合物、腔室压力、腔室温度、RF功率水平、基座位置以及其他特定工艺的参数。也可以使用其他储存在其他存储器装置(包括例如软盘或其他适当的驱动)的电脑程序来指示系统控制器。
可以使用由系统控制器执行的电脑程序产品来实施在基板上沉积薄膜堆迭的工艺或用于清洗腔室的工艺。可以用任何现有的电脑可读程序语言来撰写电脑程序代码：例如68000汇编语言、C、C++、Pascal、Fortran或其他的电脑可读程序语言。使用现有的文本编辑器将适当的程序代码输入单一文件或多个文件中，并储存或体现于电脑可用媒体中，例如电脑的存储器系统。假使输入的代码正文属于高级语言，则编译该代码，然后将产生的编译代码与预编译的(Microsoft )库例程的目标代码联结。为了执行该经联结、编译的目标代码，系统使用者调用目标代码，致使电脑系统载入存储器中的代码。然后CPU读取并执行代码，以进行程序中确认的任务。
使用者与控制器之间的介面可包含平板触摸感应式监视器。在较佳的实施例中使用二个监视器，一个组装于洁净室墙壁上供操作员使用，而另一个组装于墙壁外面供服务技师使用。该二个监视器可同时显示相同的信息，在任一情况中在同一时间只有一个监视器接受输入。为了要选择特殊的画面或功能，操作员可触碰触摸感应式监视器的指定区域。经触碰的区域会改变其彰显的颜色，或者会显示出新的菜单或画面，以确认操作员与触摸感应式监视器之间的沟通。可以使用其他的装置(如键盘、鼠标或其他的指向或沟通装置)来取代该触摸感应式监视器，或是除了该触摸感应式监视器之外可同时使用该等其他的装置，以容许使用者与系统控制器沟通。
可以将腔室等离子体区域或远程等离子体系统中的区域称为远程等离子体区域。在实施例中，自由基前驱物(例如自由基-氟前驱物和自由基-氧前驱物)形成于远程等离子体区域中并进入基板处理区域，在该基板处理区域中此组合优先蚀刻含-硅-氮-和-碳材料。在实施例中，基本上可以将等离子体功率仅施加于远程等离子体区域，以确保自由基-氟前驱物和自由基-氧前驱物在基板处理区域中不会被进一步激发。
在采用腔室等离子体区域的实施例中，该激发的等离子体流出物是在基板处理区域的分区中产生，该基板处理区域由沉积区域分割出。沉积区域(本文中亦已知为基板处理区域)是等离子体流出物混合和反应以蚀刻图案化基板(例如半导体晶圆)之处。该激发的等离子体流出物还可以伴随有惰性气体(在示例性案例中为氩气)。在图案化基板的蚀刻过程中，本文可以将基板处理区域描述为“无等离子体”的。“无等离子体”并不一定意指该区域是没有等离子体的。由于通孔1056的形状和尺寸，等离子体区域内产生的相对低浓度离子化物种和自由电子确实会通过隔板(喷洒头/离子抑制器)中的细孔(缝隙)。在一些实施例中，除了无法避免的、无处不在的非故意辐射来源之外，基板处理区域内并无离子化物种和自由电子浓度。在腔室等离子体区域中，等离子体的边界是很难界定的，并且可能会经由喷洒头中的孔侵入该基板处理区域。在感应耦合等离子体的情况中，可能会在该基板处理区域内直接激起少量的离子化。此外，可以在该基板处理区域中形成低强度的等离子体，而不损害形成的薄膜的理想特征。在激发的等离子体流出物的形成过程中，所有离子密度远比腔室等离子体区域(或就此而言为远程等离子体区域)低的等离子体的起因皆未偏离本文所用的“无等离子体”的范围。
在不同的实施例中，可以使三氟化氮(或另一个含氟前驱物)以约25sccm和约200sccm之间、约50sccm和约150sccm之间或约75sccm和约125sccm之间的速率流入腔室等离子体区域1020。在不同的实施例中，可以使氧气(O2)以约25sccm和约200sccm之间、约50sccm和约150sccm之间或约75sccm和约125sccm之间的速率流入腔室等离子体区域1020。
进入腔室的含氟前驱物和含氧前驱物的结合流动速率可以占整体气体混合物的0.05％至约20％体积；其余的是载送气体。在实施例中使含氟前驱物和含氧前驱物流入远程等离子体区域，但等离子体流出物具有相同的体积流量比。在含氟前驱物的案例中，在这些含氟前驱物气体可以先使吹洗或载送气体进入远程等离子体区域以稳定等离子体区域内的压力。
等离子体功率可以有各种的频率或多种频率的组合。在示例性的处理系统中，等离子体由盖体1021和喷洒头1053之间输送的RF功率提供。在不同的实施例中，RF功率可以在约10瓦和约2000瓦之间、约20瓦和约1500瓦之间或约50瓦和约500瓦之间。在不同的实施例中，该示例性的处理系统中施加的RF频率可以是小于约200kHz的低RF频率、在约10MHz和约15MHz之间的高RF频率或大于或约1GHz的微波频率。
在载送气体和等离子体流出物流入基板处理区域1070的过程中，可以将基板处理区域1070保持在各种压力下。基板处理区域内的压力为低于或约50托、低于或约30托、低于或约20托、低于或约10托或低于或约5托。在本发明的实施例中，该压力可以为高于或约0.1托、高于或约0.2托、高于或约0.5托或高于或约1托。可以将压力的下限与压力的上限组合，以实现本发明的进一步实施例。
在一个或更多个实施例中，可以将基板处理腔室1001整合于各种多处理平台中，该等多处理平台包括可向美国加州圣克拉拉市的应用材料公司取得的ProducerTM GT、CenturaTM AP及EnduraTM平台。这样的处理平台能够执行几种处理操作而不会破真空。可以实施本发明的实施例的处理腔室除了其他类型的腔室之外还可以包括电介质蚀刻腔室或各种化学气相沉积腔室。
可以将沉积系统的实施例结合到更大的用于制造集成电路芯片的制造系统中。图3图示依据所揭示实施例的一个这样的沉积、蚀刻、烘烤及固化腔室系统1101。在该图中，一对FOUP(前开式晶圆传送盒)1102供应基材基板(例如直径300毫米(mm)的晶圆)，该基板由机器人手臂1104接收，并在被放入晶圆处理腔室1108a-f其中之一之前被放入低压保持区域1106。可以使用第二机器人手臂1110在低压保持区域1106和晶圆处理腔室1108a-f之间来回运送基板晶圆。可以整体配备每个晶圆处理腔室1108a-f，以进行多种基板处理操作，除了循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、除气、定向及其他的基板工艺之外，该基板处理操作还包括本文所述的干式蚀刻工艺。
晶圆处理腔室1108a-f可以包括一个或更多个系统组件，用于沉积、退火、固化和/或蚀刻基板晶圆上的流动性电介质薄膜。在一个架构中，可以使用两对处理腔室(例如1108c-d和1108e-f)来在基板上沉积介电质材料，并且可以使用第三对处理腔室(例如1108a-b)蚀刻沉积的电介质。在另一个架构中，可以配置全部的三对腔室(例如1108a-f)来在基板上蚀刻电介质薄膜。可以在与不同的实施例中所图示的制造系统分离的腔室中进行所描述的任一或更多种工艺。
使用系统控制器1157来控制电机、阀、流量控制器、电源及进行本文所述工艺流程所需的其他功能。也可以通过系统控制器1157来控制气体处理系统1155，以将气体引入一个或全部的晶圆处理腔室1108a-f。系统控制器1157可以依赖光传感器的反馈来决定并调整可移动机械组件在气体处理系统1155和/或晶圆处理腔室1108a-f中的位置。机械组件可以包括在系统控制器1157的控制下由电机移动的机器人手臂、节流阀及基座。
在示例性的实施例中，系统控制器1157包括硬盘驱动(存储器)、USB接口、软盘驱动及处理器。系统控制器1157包括模拟和数字输入/输出板、介面板及步进电机控制器板。含有基板处理腔室1001的多腔室处理系统1101的各种部件受到系统控制器1157的控制。该系统控制器执行系统控制软件，该系统控制软件的形式为储存在电脑可读媒体中的电脑程序，该电脑可读媒体例如硬盘、软盘或闪存拇指驱动。也可以使用其他类型的存储器。该电脑程序包括指令组，该指令组指示时间、气体混合物、腔室压力、腔室温度、RF功率水平、基座位置以及其他特定工艺的参数。
可以使用由控制器执行的电脑程序产品来实施在基板上蚀刻、沉积或以其他方式处理薄膜的工艺或用于清洗腔室的工艺。可以用任何现有的电脑可读程序语言来撰写电脑程序代码：例如68000汇编语言、C、C++、Pascal、Fortran或其他的电脑可读程序语言。使用现有的文本编辑器将适当的程式代码输入单一文件或多个文件中，并储存或体现于电脑可用媒体中，例如电脑的存储器系统。假使输入的译码正文属于高级语言，则编译该代码，然后将产生的编译代码与预编译的(Microsoft )库例程的目标代码联结。为了执行该经联结、编译的目标代码，系统使用者调用目标代码，致使电脑系统载入存储器中的代码。然后CPU读取并执行代码，以进行程序中确认的任务。
使用者与控制器之间的介面可以经由触摸感应式监视器，并且还可以包括鼠标和键盘。在一个实施例中使用二个监视器，一个组装于洁净室墙壁上供操作员使用，而另一个组装于墙壁外面供服务技师使用。该二个监视器可同时显示相同的信息，在任一情况中在同一时间只有一个监视器接受输入。为了要选择特殊的画面或功能，操作员使用手指或鼠标触碰显示屏幕上的指定区域。经触碰的区域会改变其彰显的颜色，或者会显示出新的菜单或画面，以确认操作员的选择。
本文中使用的“基板”可为支撑基板，该支撑基板上可形成有层或无层形成。图案化基板可以是绝缘体或具有各种掺杂浓度与分布的半导体，而且例如该图案化基板可以是半导体基板，该半导体基板的类型与制造集成电路中所使用的半导体基板类型相同。该图案化基板的曝露“氧化硅”主要是SiO2，但可以包括其他元素组分的浓度，例如氮、氢、碳及诸如此类。在一些实施例中，使用本文所述方法蚀刻的氧化硅薄膜主要由硅和氧组成。用语“前驱物”用以指称任何工艺气体，该工艺气体参与反应，以从表面去除材料或沉积材料于基板上。“等离子体流出物”描述从腔室等离子体区域离开并进入基板处理区域的气体。等离子体流出物处于“激发态”，其中至少某些气体分子处于振动激发、离解和/或离子化状态。“自由基前驱物”用于描述等离子体流出物(处于激发态且激发等离子体的气体)，该等离子体流出物参与反应，以从表面去除材料或沉积材料于基板上。“自由基氧前驱物”为含有氧但还可以含有其他元素组份的自由基前驱物。“自由基氟前驱物”为含有氟但还可以含有其他元素组份的自由基前驱物。“自由基氧前驱物”和“自由基氟前驱物”分别等同于“含氧等离子体流出物”和“含氟等离子体流出物”。短语“惰性气体”是指任何当蚀刻或被并入薄膜中时不会形成化学键的气体。示例性的惰性气体包括钝气，但也可以包括其他气体，只要当微量(典型上)陷入薄膜中时无化学键形成即可。
贯穿全文使用用语“缝隙”和“沟槽”，但并非暗示蚀刻出的几何形状具有大的水平深宽比。从表面上方观看，沟槽可能会呈现圆形、椭圆形、多边形、矩形或各式各样的其他形状。沟槽可以处于围绕材料岛屿的护城河形状。用语“通孔”是用来指称低深宽比的沟槽(从上方观看)，该沟槽可能会或可能不会被填充金属来形成垂直的电连线。如本文中所使用的，保角蚀刻工艺是指表面上以与该表面相同的形状大致均匀地去除材料，亦即被蚀刻层的表面与蚀刻前的表面大体上是平行的。在本技术领域中具有通常知识的人士将理解到，所蚀刻的界面可能无法100％保角，因此，用语“大体上”容许可接受的误差。
有了揭示的几个实施例，在本技术领域中具有通常知识者将理解到，可以在不偏离本发明的精神下使用各种修改、替代结构以及均等物。此外，并未描述多个已知的工艺及元件，以避免不必要地混淆本发明。因此，不应将以上描述视为限制本发明的范围。
当提供数值的范围时，应了解到，除非正文以其他方式清楚指明，否则在该范围的上限与下限之间、每个到下限单位的十分之一的中间值也为具体揭示的。在陈述范围中的任何陈述值或中间值与该陈述范围中的任何其他陈述值或中间值之间的每个较小范围亦被涵括。这些较小范围的上限与下限可独立地被包括或排除于该范围中，而且不论是这些较小范围包括任一限值、不包括二限值或是包括二限值，这些较小范围中的每个范围亦被涵括于本发明中，取决于该陈述范围中任何经具体排除的限值。当该陈述范围包括该等限值中的一者或二者时，排除这些包括的限值中的任一者或二者的范围亦被包括。
除非正文以其他方式清楚指明，否则本文中与所附权利要求范围中使用的单数形“一”及“该”包括复数的指示对象。因此，举例来说，提及“一工艺”包括多个该种工艺，而提及“该电介质材料”包括提及一个或多个电介质材料及其为本技术领域中具有通常知识者所已知的等同物，以此类推。
同样地，当用于本说明书中及以下权利要求范围中时，字眼“包含”与“包括”意欲指明陈述的特征、整数、成分或步骤的存在，但该等字眼并不排除一个或多个其他的特征、整数、成分、步骤、动作或群组的存在或加入。

Claims (17)

1.一种在基板处理腔室的基板处理区域中蚀刻图案化基板的方法，其中所述图案化基板具有曝露的含-硅-氮-和-碳区域以及曝露的氧化硅区域，所述方法包含：
使含氟前驱物和含氧前驱物的每一者流入流体耦接至所述基板处理区域的远程等离子体区域，同时在所述远程等离子体区域中形成等离子体，以产生等离子体流出物，其中使所述含氟前驱物和所述含氧前驱物的每一者流入所述远程等离子体区域包含将O:F原子流量比保持在高于或等于2:1并低于或等于10:1；以及
藉由使所述等离子体流出物经由喷洒头中的通孔流入所述基板处理区域而蚀刻所述曝露的含-硅-氮-和-碳区域，并且其中所述蚀刻操作的选择性大于或等于150:1，所述蚀刻操作的选择性定义为曝露的含-硅-氮-和-碳区域：曝露的氧化硅区域的蚀刻速率比。
2.如权利要求1所述的方法，其特征在于，所述曝露的含-硅-氮-和-碳区域为硅碳氮化物。
3.如权利要求1所述的方法，其特征在于，所述曝露的含-硅-氮-和-碳区域基本上由硅、氮和碳所组成。
4.如权利要求1所述的方法，其特征在于，以原子百分比量测，所述曝露的含-硅-氮-和-碳区域包含10％或更多的氮。
5.如权利要求1所述的方法，其特征在于，以原子百分比量测，所述曝露的含-硅-氮-和-碳区域包含15％或更多的氮。
6.如权利要求1所述的方法，其特征在于，以原子百分比量测，所述曝露的含-硅-氮-和-碳区域包含20％或更多的氮。
7.如权利要求1所述的方法，其特征在于，所述图案化基板的温度大于或等于0℃并小于或等于50℃。
8.如权利要求1所述的方法，其特征在于，所述基板处理区域内的压力低于或等于50托并高于或等于0.1托。
9.如权利要求1所述的方法，其特征在于，在所述远程等离子体区域中形成等离子体以产生等离子体流出物包含施加10瓦至2000瓦之间的RF功率至所述远程等离子体区域。
10.如权利要求1所述的方法，其特征在于，所述等离子体为电容耦合等离子体。
11.如权利要求1所述的方法，其特征在于，所述含氧前驱物包含O2、O3、N2O或NO2中的至少一者。
12.如权利要求1所述的方法，其特征在于，在所述蚀刻操作过程中所述基板处理区域无等离子体。
13.如权利要求1所述的方法，其特征在于，所述含氟前驱物包含NF3。
14.如权利要求1所述的方法，其特征在于，所述含氟前驱物包含选自于由原子氟、双原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氢、六氟化硫、二氟化氙、四氟化碳、三氟甲烷、二氟甲烷或氟甲烷所组成的群组的前驱物。
15.如权利要求1所述的方法，其特征在于，所述含氟前驱物和所述等离子体流出物基本上无氢。
16.如权利要求1所述的方法，其特征在于，所述基板处理区域内基本上无离子化物种和自由电子浓度。
17.如权利要求1所述的方法，其特征在于，所述喷洒头中的所述通孔的最小内径介于0.2mm至5mm之间。
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