CN102971268A - 包含铅-碲-锂-氧化物的厚膜浆料以及它们在半导体装置制造中的用途 - Google Patents
包含铅-碲-锂-氧化物的厚膜浆料以及它们在半导体装置制造中的用途 Download PDFInfo
- Publication number
- CN102971268A CN102971268A CN2011800327018A CN201180032701A CN102971268A CN 102971268 A CN102971268 A CN 102971268A CN 2011800327018 A CN2011800327018 A CN 2011800327018A CN 201180032701 A CN201180032701 A CN 201180032701A CN 102971268 A CN102971268 A CN 102971268A
- Authority
- CN
- China
- Prior art keywords
- weight
- thick
- tellurium
- lithium
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001947 lithium oxide Inorganic materials 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims description 109
- 238000000034 method Methods 0.000 claims description 41
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 31
- 239000007787 solid Substances 0.000 claims description 24
- 229910052714 tellurium Inorganic materials 0.000 claims description 19
- 229910006715 Li—O Inorganic materials 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 239000013543 active substance Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910005793 GeO 2 Inorganic materials 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 8
- 239000002002 slurry Substances 0.000 description 61
- 239000000843 powder Substances 0.000 description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 34
- 239000011521 glass Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 29
- 238000002360 preparation method Methods 0.000 description 24
- 239000000306 component Substances 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 239000004411 aluminium Substances 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000000576 coating method Methods 0.000 description 15
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 10
- 238000007650 screen-printing Methods 0.000 description 10
- 239000011734 sodium Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- -1 polyoxyethylene Polymers 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000003723 Smelting Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001362 electron spin resonance spectrum Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- IBMRTYCHDPMBFN-UHFFFAOYSA-N Mono-Me ester-Pentanedioic acid Natural products COC(=O)CCCC(O)=O IBMRTYCHDPMBFN-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- FSCIDASGDAWVED-UHFFFAOYSA-N dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC FSCIDASGDAWVED-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229940059574 pentaerithrityl Drugs 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000004846 x-ray emission Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-VIFPVBQESA-N (R)-(+)-alpha-terpineol Chemical compound CC1=CC[C@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-VIFPVBQESA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 229910012258 LiPO Inorganic materials 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000004813 Moessbauer spectroscopy Methods 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N beta-terpineol Chemical compound CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- HUTDDBSSHVOYJR-UHFFFAOYSA-H bis[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphaplumbetan-2-yl)oxy]lead Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O HUTDDBSSHVOYJR-UHFFFAOYSA-H 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 1
- BNMYXGKEMMVHOX-UHFFFAOYSA-N dimethyl butanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC BNMYXGKEMMVHOX-UHFFFAOYSA-N 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- IPCSVZSSVZVIGE-UHFFFAOYSA-M hexadecanoate Chemical compound CCCCCCCCCCCCCCCC([O-])=O IPCSVZSSVZVIGE-UHFFFAOYSA-M 0.000 description 1
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 229960004232 linoleic acid Drugs 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012533 medium component Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- ZYXPMOIHQRKWGT-UHFFFAOYSA-N silver;2,2,2-trifluoroacetic acid Chemical compound [Ag].OC(=O)C(F)(F)F ZYXPMOIHQRKWGT-UHFFFAOYSA-N 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/105—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
- C03C8/12—Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
- C03C3/142—Silica-free oxide glass compositions containing boron containing lead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Sustainable Development (AREA)
- Ceramic Engineering (AREA)
- Sustainable Energy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Structural Engineering (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
组分 | 重量% |
2,2,4-三甲基-1,3-戊二醇单异丁酸酯 | 5.57 |
乙基纤维素(50-52%的羟乙基) | 0.14 |
乙基纤维素(48-50%的羟乙基) | 0.04 |
N-牛油-1,3-二氨基丙烷二油酸酯 | 1.00 |
氢化蓖麻油 | 0.50 |
全氢松香酸的季戊四醇四酯 | 1.25 |
己二酸二甲酯 | 3.15 |
戊二酸二甲酯 | 0.35 |
玻璃A(wt%) | |
B2O3 | 2.09 |
ZnO | 0.98 |
TiO2 | 0.48 |
Bi2O3 | 26.64 |
TeO2 | 67.22 |
P2O5 | 0.43 |
Li2O | 2.16 |
Claims (15)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33100610P | 2010-05-04 | 2010-05-04 | |
US61/331,006 | 2010-05-04 | ||
US201161440117P | 2011-02-07 | 2011-02-07 | |
US61/440,117 | 2011-02-07 | ||
US201161445508P | 2011-02-22 | 2011-02-22 | |
US61/445,508 | 2011-02-22 | ||
US201161467003P | 2011-03-24 | 2011-03-24 | |
US61/467,003 | 2011-03-24 | ||
PCT/US2011/035145 WO2011140192A1 (en) | 2010-05-04 | 2011-05-04 | Thick-film pastes containing lead-tellurium-lithium- oxides, and their use in the manufacture of semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102971268A true CN102971268A (zh) | 2013-03-13 |
CN102971268B CN102971268B (zh) | 2017-06-06 |
Family
ID=44583755
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710681515.6A Active CN107424662B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201180032359.1A Active CN102958861B (zh) | 2010-05-04 | 2011-05-04 | 包含铅-碲-锂-钛-氧化物的厚膜浆料以及它们在制造半导体装置中的用途 |
CN201180031225.8A Active CN103038186B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201811172520.5A Active CN109014180B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201180031184.2A Active CN102947235B (zh) | 2010-05-04 | 2011-05-04 | 包含铅-碲-硼-氧化物的厚膜浆料以及它们在制造半导体装置中的用途 |
CN201180032701.8A Active CN102971268B (zh) | 2010-05-04 | 2011-05-04 | 包含铅‑碲‑锂‑氧化物的厚膜浆料以及它们在半导体装置制造中的用途 |
Family Applications Before (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710681515.6A Active CN107424662B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201180032359.1A Active CN102958861B (zh) | 2010-05-04 | 2011-05-04 | 包含铅-碲-锂-钛-氧化物的厚膜浆料以及它们在制造半导体装置中的用途 |
CN201180031225.8A Active CN103038186B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201811172520.5A Active CN109014180B (zh) | 2010-05-04 | 2011-05-04 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
CN201180031184.2A Active CN102947235B (zh) | 2010-05-04 | 2011-05-04 | 包含铅-碲-硼-氧化物的厚膜浆料以及它们在制造半导体装置中的用途 |
Country Status (9)
Country | Link |
---|---|
US (12) | US8889979B2 (zh) |
EP (5) | EP2566823B1 (zh) |
JP (4) | JP5746325B2 (zh) |
KR (7) | KR102048388B1 (zh) |
CN (6) | CN107424662B (zh) |
ES (1) | ES2570133T3 (zh) |
HK (2) | HK1180295A1 (zh) |
TW (4) | TWI498308B (zh) |
WO (5) | WO2011140192A1 (zh) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545016A (zh) * | 2013-10-21 | 2014-01-29 | 深圳首创光伏有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
CN103606393A (zh) * | 2013-11-08 | 2014-02-26 | 江苏科技大学 | 一种太阳能电池背银导电银浆组合物及制备方法 |
CN104347151A (zh) * | 2013-08-02 | 2015-02-11 | 上海匡宇电子技术有限公司 | 一种导电银浆及其制备方法 |
CN104733074A (zh) * | 2013-12-20 | 2015-06-24 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的电极 |
CN104795126A (zh) * | 2014-01-17 | 2015-07-22 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有改进的粘着性能的铅-铋-碲-硅酸盐无机反应体系 |
CN104867535A (zh) * | 2014-02-26 | 2015-08-26 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 太阳能电池浆料中的包含钨和铅的玻璃 |
CN105097067A (zh) * | 2014-05-15 | 2015-11-25 | 三星Sdi株式会社 | 用于形成太阳电池电极的组合物及使用其制备的电极 |
CN105593946A (zh) * | 2013-08-28 | 2016-05-18 | 三星Sdi株式会社 | 形成太阳能电池电极用组成物及使用该组成物制造的电极 |
CN105632589A (zh) * | 2016-03-18 | 2016-06-01 | 苏州开元民生科技股份有限公司 | 一种高储热晶硅太阳能背电极银浆及其制备方法 |
CN105939976A (zh) * | 2014-01-28 | 2016-09-14 | 东进世美肯株式会社 | 玻璃组合物和使用该玻璃组合物的太阳能电池用电极组合物 |
CN107004457A (zh) * | 2014-11-27 | 2017-08-01 | 株式会社则武 | 导电性组合物 |
CN107274963A (zh) * | 2017-05-31 | 2017-10-20 | 深圳市春仰科技有限公司 | 硅太阳能电池正面导电银浆及其制备方法 |
CN108883965A (zh) * | 2016-04-07 | 2018-11-23 | 贺利氏贵金属北美康舍霍肯有限责任公司 | 用于硅太阳能电池的金属化浆料中的含卤化物玻璃 |
CN109336594A (zh) * | 2018-10-26 | 2019-02-15 | 贵州振华电子信息产业技术研究有限公司 | 低电容变化率压电陶瓷元件、压电陶瓷及其制作方法 |
WO2020118781A1 (zh) * | 2018-12-11 | 2020-06-18 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的导电银浆和太阳能电池 |
CN111302620A (zh) * | 2018-12-11 | 2020-06-19 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的导电银浆和太阳能电池 |
CN111354503A (zh) * | 2018-12-24 | 2020-06-30 | 东泰高科装备科技有限公司 | 一种柔性薄膜太阳能电池组件用导电银浆及其制备方法 |
CN112992401A (zh) * | 2021-04-25 | 2021-06-18 | 西安宏星电子浆料科技股份有限公司 | 一种可无损调阻的电阻浆料 |
CN113072303A (zh) * | 2021-03-29 | 2021-07-06 | 浙江奕成科技有限公司 | 一种太阳能电池导电银浆用玻璃粉形貌改变方法 |
Families Citing this family (181)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2947481B1 (fr) | 2009-07-03 | 2011-08-26 | Commissariat Energie Atomique | Procede de collage cuivre-cuivre simplifie |
JP5559510B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
EP2566823B1 (en) | 2010-05-04 | 2016-10-05 | E. I. du Pont de Nemours and Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
CN103119660A (zh) * | 2010-06-24 | 2013-05-22 | E·I·内穆尔杜邦公司 | 用于形成硅太阳能电池的银背面阳极的方法 |
US9129725B2 (en) * | 2010-12-17 | 2015-09-08 | E I Du Pont De Nemours And Company | Conductive paste composition containing lithium, and articles made therefrom |
US9680036B2 (en) * | 2011-01-06 | 2017-06-13 | Heraeus Precious Metals North America Conshohocken Llc | Organometallic and hydrocarbon additives for use with aluminum back solar cell contacts |
US8815636B2 (en) * | 2011-01-06 | 2014-08-26 | Heraeus Precious Metals North America Conshohocken Llc | Oxides and glasses for use with aluminum back solar cell contacts |
US8709862B2 (en) * | 2011-01-06 | 2014-04-29 | Heraeus Precious Metals North America Conshohocken Llc | Vanadium, cobalt and strontium additives for use in aluminum back solar cell contacts |
JP2014512073A (ja) | 2011-03-24 | 2014-05-19 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 導電性ペースト組成物およびそれで製造される半導体デバイス |
US8512463B2 (en) * | 2011-04-05 | 2013-08-20 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices |
KR101765986B1 (ko) | 2011-04-21 | 2017-08-07 | 소에이 가가쿠 고교 가부시키가이샤 | 도전성 페이스트 |
US8790550B2 (en) * | 2011-06-06 | 2014-07-29 | E I Du Pont De Nemours And Company | Low temperature fireable thick film silver paste |
CN103688341B (zh) * | 2011-07-19 | 2016-09-28 | 日立化成株式会社 | n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法 |
US8696948B2 (en) * | 2011-08-11 | 2014-04-15 | E I Du Pont De Nemours And Company | Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices |
US8691119B2 (en) * | 2011-08-11 | 2014-04-08 | E I Du Pont De Nemours And Company | Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices |
US8916069B2 (en) * | 2011-08-18 | 2014-12-23 | E I Du Pont De Nemours And Company | Conductive compositions containing rhodium and Pb-Te-O and their use in the manufacture of semiconductor devices |
KR101896740B1 (ko) * | 2011-09-09 | 2018-09-07 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 은 태양 전지 접점 |
CN102315332B (zh) * | 2011-09-29 | 2013-08-07 | 英利能源(中国)有限公司 | 太阳能电池片热处理工艺 |
US8771554B2 (en) * | 2011-10-20 | 2014-07-08 | E I Du Pont De Nemours And Company | Thick film silver paste containing Al2O3 and lead-tellurium—oxide and its use in the manufacture of semiconductor devices |
TWI574280B (zh) * | 2011-11-04 | 2017-03-11 | 賀利氏貴金屬北美康舍霍肯有限責任公司 | 用於導電性漿料之有機載體 |
US20130186463A1 (en) * | 2011-12-06 | 2013-07-25 | E I Du Pont De Nemours And Company | Conductive silver paste for a metal-wrap-through silicon solar cell |
KR20130064659A (ko) * | 2011-12-08 | 2013-06-18 | 제일모직주식회사 | 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 |
KR101350960B1 (ko) * | 2012-01-13 | 2014-01-16 | 한화케미칼 주식회사 | 글래스 프릿, 이를 포함하는 도전성 페이스트 조성물 및 태양전지 |
CN103204632B (zh) * | 2012-01-14 | 2015-09-02 | 比亚迪股份有限公司 | 导电玻璃粉及其制备方法、晶体硅太阳能电池铝导电浆料及制备方法 |
US20130180583A1 (en) * | 2012-01-17 | 2013-07-18 | E I Du Pont De Nemours And Company | Conductive paste for fine-line high-aspect-ratio screen printing in the manufacture of semiconductor devices |
US8952245B2 (en) | 2012-01-23 | 2015-02-10 | Heraeus Precious Metals North America Conshohocken Llc | Conductive thick film paste for solar cell contacts |
US8956557B2 (en) * | 2012-01-24 | 2015-02-17 | E I Du Pont De Nemours And Company | Thick film silver paste containing copper and lead—tellurium—oxide and its use in the manufacture of semiconductor devices |
WO2013115275A1 (ja) * | 2012-01-30 | 2013-08-08 | 京セラ株式会社 | 光電変換素子の製造方法および光電変換素子 |
JP6356389B2 (ja) * | 2012-04-17 | 2018-07-11 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 太陽電池接点用導電性厚膜ペースト |
CN103377753B (zh) | 2012-04-17 | 2017-07-14 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于导电糊组合物的无机反应体系 |
CN103915128B (zh) * | 2012-05-03 | 2016-06-08 | 苏州晶银新材料股份有限公司 | 光伏电池背电极用导电浆料 |
JP6359236B2 (ja) * | 2012-05-07 | 2018-07-18 | トーカロ株式会社 | 静電チャック |
US9087937B2 (en) * | 2012-05-10 | 2015-07-21 | E I Du Pont De Nemours And Company | Glass composition and its use in conductive silver paste |
JP2015528178A (ja) * | 2012-06-12 | 2015-09-24 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 接着促進剤を有する導電性ペースト |
JP5937904B2 (ja) * | 2012-06-26 | 2016-06-22 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペースト組成物 |
JP5690780B2 (ja) | 2012-07-18 | 2015-03-25 | 株式会社ノリタケカンパニーリミテド | Ag電極形成用ペースト組成物とその製造方法ならびに太陽電池 |
JP6112384B2 (ja) * | 2012-07-31 | 2017-04-12 | 日本電気硝子株式会社 | 電極形成用ガラス及びこれを用いた電極形成材料 |
US8652873B1 (en) | 2012-08-03 | 2014-02-18 | E I Du Pont De Nemours And Company | Thick-film paste containing lead-vanadium-based oxide and its use in the manufacture of semiconductor devices |
KR20140022511A (ko) * | 2012-08-13 | 2014-02-25 | 제일모직주식회사 | 태양전지 전극용 페이스트, 이로부터 제조된 전극 및 이를 포함하는 태양전지 |
US8969709B2 (en) | 2012-08-30 | 2015-03-03 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
US8900488B2 (en) * | 2012-09-06 | 2014-12-02 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US9236161B2 (en) * | 2012-09-06 | 2016-01-12 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
JP2014060261A (ja) * | 2012-09-18 | 2014-04-03 | Murata Mfg Co Ltd | 導電性ペースト、太陽電池、及び太陽電池の製造方法 |
WO2014050703A1 (ja) * | 2012-09-26 | 2014-04-03 | 株式会社村田製作所 | 導電性ペースト及び太陽電池 |
US10069021B2 (en) * | 2012-10-12 | 2018-09-04 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive pastes with salts with an anion consisting of halogen and oxygen in solar cell applications |
JP5756447B2 (ja) * | 2012-10-31 | 2015-07-29 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
KR101600652B1 (ko) | 2012-11-12 | 2016-03-07 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
KR101518500B1 (ko) * | 2012-12-21 | 2015-05-11 | 제일모직주식회사 | 유리프릿, 이를 포함하는 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 |
KR101557536B1 (ko) | 2012-12-21 | 2015-10-06 | 제일모직주식회사 | 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 |
WO2014146306A1 (zh) * | 2013-03-22 | 2014-09-25 | 深圳首创光伏有限公司 | 太阳能电池正面电极导电浆料及其制备方法 |
CN103915127B (zh) * | 2013-01-03 | 2017-05-24 | 上海匡宇科技股份有限公司 | 用于表面高方阻硅基太阳能电池正面银浆及其制备方法 |
JP5994650B2 (ja) * | 2013-01-16 | 2016-09-21 | 昭栄化学工業株式会社 | 保護膜形成用ガラス組成物及びその製造方法 |
WO2014117409A1 (zh) * | 2013-02-04 | 2014-08-07 | 深圳首创光伏有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
JP6137852B2 (ja) * | 2013-02-04 | 2017-05-31 | ナミックス株式会社 | 太陽電池の電極形成用導電性ペースト |
US9236506B2 (en) * | 2013-02-05 | 2016-01-12 | E I Du Pont De Nemours And Company | Conductive silver paste for a metal-wrap-through silicon solar cell |
KR101587683B1 (ko) * | 2013-02-15 | 2016-01-21 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP6403963B2 (ja) * | 2013-03-15 | 2018-10-10 | Dowaエレクトロニクス株式会社 | 太陽電池電極用焼成型ペースト、太陽電池および銀粉 |
EP2980857B1 (en) * | 2013-03-29 | 2019-02-27 | Shoei Chemical Inc. | Conductive paste for solar cell element surface electrodes and method for manufacturing solar cell element |
CN109599450A (zh) | 2013-04-03 | 2019-04-09 | Lg电子株式会社 | 太阳能电池 |
KR101882525B1 (ko) | 2013-04-11 | 2018-07-26 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101590224B1 (ko) * | 2013-04-11 | 2016-01-29 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101582374B1 (ko) * | 2013-04-25 | 2016-01-04 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101600659B1 (ko) * | 2013-04-25 | 2016-03-07 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101590226B1 (ko) * | 2013-05-29 | 2016-01-29 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US9246027B2 (en) * | 2013-05-31 | 2016-01-26 | E I Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
US20140352768A1 (en) * | 2013-05-31 | 2014-12-04 | E I Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
JP6018729B2 (ja) * | 2013-06-12 | 2016-11-02 | 株式会社ノリタケカンパニーリミテド | 太陽電池の裏面ファイヤースルー用ペースト組成物、および太陽電池の製造方法 |
US9159864B2 (en) | 2013-07-25 | 2015-10-13 | First Solar, Inc. | Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices |
KR101483875B1 (ko) * | 2013-07-31 | 2015-01-16 | 삼성전기주식회사 | 글라스 코어기판 및 그 제조방법 |
CN103771715B (zh) * | 2013-08-06 | 2017-09-05 | 浙江光达电子科技有限公司 | 一种太阳能电池背面银浆用玻璃粉及其制备方法 |
US8852995B1 (en) * | 2013-08-06 | 2014-10-07 | Atomic Energy Council-Institute Of Nuclear Energy Research | Preparation method for patternization of metal electrodes in silicon solar cells |
US20150060742A1 (en) * | 2013-09-03 | 2015-03-05 | E I Du Pont De Nemours And Company | Conductive paste used for a solar cell electrode |
KR101608123B1 (ko) * | 2013-09-13 | 2016-03-31 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP6142756B2 (ja) * | 2013-10-02 | 2017-06-07 | セントラル硝子株式会社 | ガラス粉末材料 |
CN103545015B (zh) * | 2013-10-21 | 2016-08-24 | 深圳市首骋新材料科技有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
CN103545017B (zh) * | 2013-10-25 | 2016-08-24 | 江苏昱星新材料科技有限公司 | 一种太阳能电池正面电极用导电浆料及其制备方法 |
CN104575661B (zh) * | 2013-10-25 | 2017-09-12 | 硕禾电子材料股份有限公司 | 一种导电浆及其制造方法 |
KR101659131B1 (ko) * | 2013-11-12 | 2016-09-22 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101593754B1 (ko) * | 2013-11-12 | 2016-02-12 | 제일모직주식회사 | 유리 프릿, 이를 포함하는 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP6114389B2 (ja) * | 2013-11-20 | 2017-04-12 | 株式会社ノリタケカンパニーリミテド | 導電性組成物の製造方法 |
US9240515B2 (en) | 2013-11-25 | 2016-01-19 | E I Du Pont De Nemours And Company | Method of manufacturing a solar cell |
CN103617843A (zh) * | 2013-11-29 | 2014-03-05 | 江苏瑞德新能源科技有限公司 | 一种背银浆料的生产方法 |
US9793025B2 (en) * | 2013-12-03 | 2017-10-17 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
JP6242198B2 (ja) * | 2013-12-10 | 2017-12-06 | 京都エレックス株式会社 | 半導体デバイスの導電膜形成用導電性ペースト、および半導体デバイス、並びに半導体デバイスの製造方法 |
US9039937B1 (en) | 2013-12-17 | 2015-05-26 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes and electrode fabricated using the same |
KR101780531B1 (ko) * | 2013-12-17 | 2017-09-22 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP5903424B2 (ja) * | 2013-12-21 | 2016-04-13 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物およびその製造方法 |
CN104751935A (zh) * | 2013-12-26 | 2015-07-01 | 湖南利德电子浆料有限公司 | 一种高方阻高效太阳能电池正面银浆及制备方法 |
CN104751939B (zh) * | 2013-12-31 | 2017-05-31 | 比亚迪股份有限公司 | 一种晶体硅太阳能电池用铝导电浆料 |
KR101696968B1 (ko) * | 2014-01-09 | 2017-01-16 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP2015187063A (ja) * | 2014-01-17 | 2015-10-29 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト組成物のための鉛−ビスマス−テルル無機反応系 |
US20150206992A1 (en) * | 2014-01-17 | 2015-07-23 | Heraeus Precious Metals North America Conshohocken Llc | Lead-tellurium inorganic reaction systems |
US20150240099A1 (en) * | 2014-02-24 | 2015-08-27 | Xerox Corporation | Silver flake conductive paste ink with nickel particles |
EP2913139B1 (en) * | 2014-02-26 | 2019-04-03 | Heraeus Precious Metals North America Conshohocken LLC | A glass comprising molybdenum and lead in a solar cell paste |
US9761348B2 (en) | 2014-03-10 | 2017-09-12 | E I Du Pont De Nemours And Company | Conductive paste used for solar cell electrodes |
CN103854721B (zh) * | 2014-03-25 | 2016-04-13 | 中希集团有限公司 | 一种太阳能电池正面金属化银浆及其制备方法 |
CN103951262B (zh) * | 2014-04-15 | 2017-01-25 | 江苏欧耐尔新型材料有限公司 | 太阳能电池正电极用含铅碲铋玻璃浆及其制备和应用方法 |
GB201407418D0 (en) * | 2014-04-28 | 2014-06-11 | Johnson Matthey Plc | Conductive paste, electrode and solar cell |
US9209323B2 (en) | 2014-05-05 | 2015-12-08 | E I Du Pont De Nemours And Company | Conductive paste used for solar cell electrodes and method of manufacturing the solar cell electrodes |
US9349883B2 (en) * | 2014-06-19 | 2016-05-24 | E I Du Pont De Nemours And Company | Conductor for a solar cell |
CN104118992A (zh) * | 2014-07-22 | 2014-10-29 | 江苏欧耐尔新型材料有限公司 | 用于太阳能高方阻浆料的玻璃粉及其制备方法 |
CN104150775A (zh) * | 2014-08-01 | 2014-11-19 | 东华大学 | 一种用于光伏电池导电浆料的低熔点碲系玻璃及制备方法 |
CN104193166B (zh) * | 2014-09-05 | 2016-08-24 | 广东风华高新科技股份有限公司 | 玻璃料及其制备方法 |
KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
KR20160057583A (ko) * | 2014-11-13 | 2016-05-24 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
JP5856277B1 (ja) * | 2014-11-27 | 2016-02-09 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペーストおよび太陽電池セル |
JP6219913B2 (ja) | 2014-11-28 | 2017-10-25 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
TWI521546B (zh) * | 2014-12-08 | 2016-02-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(三) |
TWI521545B (zh) * | 2014-12-08 | 2016-02-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(二) |
CN104455923B (zh) * | 2014-12-13 | 2016-10-05 | 常熟市华懋化工设备有限公司 | 搪玻璃管件 |
JP2016115873A (ja) * | 2014-12-17 | 2016-06-23 | 京都エレックス株式会社 | 太陽電池電極形成用導電性ペースト、並びに、これを用いた太陽電池素子および太陽電池モジュール |
CN104464884A (zh) * | 2014-12-26 | 2015-03-25 | 常熟联茂电子科技有限公司 | 一种有机功率电阻浆料 |
CN104464890A (zh) * | 2014-12-26 | 2015-03-25 | 常熟联茂电子科技有限公司 | 一种厚膜电路电阻浆料 |
KR20160082468A (ko) * | 2014-12-31 | 2016-07-08 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 전기전도성 페이스트 조성물용 유리 조성물 |
WO2016126801A1 (en) | 2015-02-04 | 2016-08-11 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
CN104692668B (zh) * | 2015-02-11 | 2017-04-12 | 西北大学 | 一种太阳能电池正面电极浆料用快速结晶型玻璃粉 |
TWI532062B (zh) * | 2015-04-27 | 2016-05-01 | Giga Solar Materials Corp | Conductive pulp and a method of manufacturing the same |
JP2016213284A (ja) * | 2015-05-01 | 2016-12-15 | 東洋アルミニウム株式会社 | Perc型太陽電池用アルミニウムペースト組成物 |
WO2016193209A1 (en) | 2015-06-02 | 2016-12-08 | Basf Se | Conductive paste and process for forming an electrode on a p-type emitter on an n-type base semiconductor substrate |
JP6580383B2 (ja) | 2015-06-17 | 2019-09-25 | ナミックス株式会社 | 導電性ペースト、太陽電池及び太陽電池の製造方法 |
KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP5990315B2 (ja) * | 2015-09-17 | 2016-09-14 | 株式会社ノリタケカンパニーリミテド | 導電性組成物 |
KR102507404B1 (ko) * | 2015-09-25 | 2023-03-07 | 주식회사 엘지화학 | 태양전지 전극용 결정질 분말, 이의 페이스트 조성물과 태양전지 |
KR101693840B1 (ko) * | 2015-10-05 | 2017-01-09 | 대주전자재료 주식회사 | 태양전지 전면전극용 페이스트 조성물 및 이를 이용한 태양전지 |
KR101940170B1 (ko) * | 2015-10-22 | 2019-01-18 | 삼성에스디아이 주식회사 | 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지 |
US9741878B2 (en) | 2015-11-24 | 2017-08-22 | PLANT PV, Inc. | Solar cells and modules with fired multilayer stacks |
DE102017003604A1 (de) | 2016-04-13 | 2017-10-19 | E.I. Du Pont De Nemours And Company | Leitfähige Pastenzusammensetzung und damit angefertigte Halbleitervorrichtungen |
US10134925B2 (en) | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
JP6830524B2 (ja) | 2016-08-03 | 2021-02-17 | フエロ コーポレーション | 半導体装置用パッシベーションガラス |
CN109074895B (zh) * | 2016-08-16 | 2022-05-27 | 浙江凯盈新材料有限公司 | 用于硅太阳能电池中正面金属化的厚膜浆料 |
AU2017330298B2 (en) | 2016-09-21 | 2022-09-29 | Cytrellis Biosystems, Inc. | Devices and methods for cosmetic skin resurfacing |
US10741300B2 (en) | 2016-10-07 | 2020-08-11 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US10593439B2 (en) | 2016-10-21 | 2020-03-17 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
KR20180046808A (ko) * | 2016-10-28 | 2018-05-09 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101853417B1 (ko) * | 2016-11-24 | 2018-05-02 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지 |
WO2018112742A1 (en) | 2016-12-20 | 2018-06-28 | Zhejiang Kaiying New Materials Co., Ltd. | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions |
MY189222A (en) | 2016-12-20 | 2022-01-31 | Zhejiang Kaiying New Mat Co Ltd | Siloxane-containing solar cell metallization pastes |
US20200048140A1 (en) | 2017-02-15 | 2020-02-13 | Basf Se | Glass frit, conductive paste and use of the conductive paste |
US10115505B2 (en) * | 2017-02-23 | 2018-10-30 | E I Du Pont De Nemours And Company | Chip resistor |
US9847437B1 (en) | 2017-03-21 | 2017-12-19 | Jiun Pyng You | Method of forming conductive electrode grids over silicon wafer surfaces |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
KR102290565B1 (ko) * | 2017-04-28 | 2021-08-18 | 한국전자기술연구원 | 적층구조체 및 그의 제조방법 |
TWI638793B (zh) | 2017-04-28 | 2018-10-21 | 碩禾電子材料股份有限公司 | 用於太陽能電池的導電漿、太陽能電池及其製造方法以及太陽能電池模組 |
KR101972384B1 (ko) * | 2017-09-08 | 2019-08-19 | 대주전자재료 주식회사 | 태양전지 전면전극용 페이스트 조성물 및 이의 제조방법 |
US10040717B1 (en) | 2017-09-18 | 2018-08-07 | Jiangxi Jiayin Science and Technology, Ltd. | Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces |
CN107759092B (zh) * | 2017-09-28 | 2020-12-22 | 浙江光达电子科技有限公司 | 一种用于背钝化晶体硅太阳能电池背面银浆的无铅玻璃粉及其制备方法 |
WO2019069765A1 (ja) * | 2017-10-03 | 2019-04-11 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
CN107746184B (zh) * | 2017-10-20 | 2020-11-24 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的导电银浆和制备方法 |
CN107759093B (zh) * | 2017-10-23 | 2020-05-22 | 常州聚和新材料股份有限公司 | 一种高方阻浅结晶硅太阳能电池用玻璃料及其制备方法和浆料 |
CN107812527B (zh) * | 2017-11-09 | 2020-08-07 | 南京大学(苏州)高新技术研究院 | 一种粉末催化材料、含石墨相氮化碳复合纳米催化材料的制备及应用 |
WO2019183931A1 (zh) | 2018-03-30 | 2019-10-03 | 深圳市首骋新材料科技有限公司 | 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池 |
WO2019183932A1 (zh) | 2018-03-30 | 2019-10-03 | 深圳市首骋新材料科技有限公司 | 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池 |
FR3080708B1 (fr) * | 2018-04-27 | 2020-04-24 | Silec Cable | Isolateur pour une extremite de cable |
JP2019214494A (ja) * | 2018-06-13 | 2019-12-19 | 国立大学法人 鹿児島大学 | ガラス、ガラスペースト、及びガラスの製造方法 |
CN110808304A (zh) * | 2018-07-20 | 2020-02-18 | 张伟 | 一种带有图案的光伏组件及其制备方法 |
US11152640B2 (en) * | 2018-10-05 | 2021-10-19 | University Of Maryland | Lithium bismuth oxide compounds as Li super-ionic conductor, solid electrolyte, and coating layer for Li metal battery and Li-ion battery |
KR102316662B1 (ko) * | 2018-10-10 | 2021-10-25 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성 방법, 이로부터 제조된 태양전지 전극 및 태양전지 |
TWI697015B (zh) * | 2019-03-05 | 2020-06-21 | 南韓商大州電子材料股份有限公司 | 太陽能電池前電極用糊劑組合物及其製備方法 |
CN110015851A (zh) * | 2019-04-17 | 2019-07-16 | 北京大学深圳研究生院 | 一种用于制备太阳能电池银浆的玻璃粉及其应用 |
CN110002758A (zh) * | 2019-04-17 | 2019-07-12 | 北京大学深圳研究生院 | 用于太阳能电池银浆的玻璃粉、银浆及其制备方法和应用 |
CN109970347A (zh) * | 2019-04-29 | 2019-07-05 | 齐鲁工业大学 | 一种提高锂离子电池性能的TeO2-V2O5-CuO微晶玻璃负极材料 |
CN110092577B (zh) * | 2019-05-21 | 2022-03-22 | 张学新 | 一种高硼硅红色玻璃管的制备方法 |
US10622502B1 (en) | 2019-05-23 | 2020-04-14 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell edge interconnects |
US10749045B1 (en) | 2019-05-23 | 2020-08-18 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell side surface interconnects |
US11508862B2 (en) | 2019-05-29 | 2022-11-22 | Changzhou Fusion New Material Co., Ltd. | Thick-film conductive paste, and their use in the manufacture of solar cells |
CN110342827A (zh) * | 2019-06-21 | 2019-10-18 | 浙江中希电子科技有限公司 | 一种低温改性玻璃粉及其在正面双层钝化Perc电池中的应用 |
CN110305523A (zh) * | 2019-07-02 | 2019-10-08 | 黄山市晶特美新材料有限公司 | 一种丝印抗冲击玻璃油墨及其制备方法 |
CN110451805B (zh) * | 2019-09-19 | 2021-11-26 | 成都光明光电有限责任公司 | 封接玻璃 |
CN110467448B (zh) * | 2019-09-19 | 2021-12-07 | 安徽建筑大学 | 一种适于流延成型的纳米ntc陶瓷粉体及流延膜的制备方法 |
KR102238252B1 (ko) * | 2019-10-24 | 2021-04-09 | 주식회사 베이스 | 글라스 프릿 및 이를 포함하는 태양전지 전극용 페이스트 조성물 |
KR102283727B1 (ko) * | 2020-01-21 | 2021-08-02 | 박태호 | 글라스 프릿 및 이를 포함하는 태양전지 전극용 페이스트 조성물 |
CN111768892B (zh) * | 2020-07-21 | 2021-12-21 | 西安宏星电子浆料科技股份有限公司 | 一种氮化铝基体用耐酸可电镀型导体浆料 |
CN111848165B (zh) * | 2020-08-03 | 2021-04-09 | 深圳见炬科技有限公司 | 一种p型碲化铋热电材料及其制备方法 |
CN112028487A (zh) * | 2020-09-25 | 2020-12-04 | 广东四通集团股份有限公司 | 一种耐磨釉面日用瓷器釉料的制备方法 |
CN112635593B (zh) * | 2020-12-22 | 2022-05-24 | 东北电力大学 | 一种全锑基薄膜太阳电池及其制备方法 |
KR102680599B1 (ko) * | 2021-10-19 | 2024-07-02 | 주식회사 휘닉스에이엠 | 태양 전지 전극 형성용 유리 프릿 조성물, 이를 사용하여 형성된 태양 전지용 전극, 및 상기 전극을 포함하는 태양 전지 |
CN114133231A (zh) * | 2021-11-05 | 2022-03-04 | 深圳顺络电子股份有限公司 | 镍锌铁氧体材料及其制造方法 |
CN114409248B (zh) * | 2022-01-06 | 2023-04-07 | 江苏日御光伏新材料科技有限公司 | 一种低热损的碲-锂-硅-锆体系玻璃料及其导电浆料与应用 |
KR102693714B1 (ko) * | 2022-10-14 | 2024-08-09 | 주식회사 휘닉스에이엠 | 태양 전지 전극 형성용 유리 프릿 조성물, 이를 사용하여 형성된 태양 전지용 전극, 및 상기 전극을 포함하는 태양 전지 |
CN115504769B (zh) * | 2022-10-21 | 2023-11-03 | 无锡市高宇晟新材料科技有限公司 | 微波介质陶瓷材料及其制备方法、应用 |
CN116741431B (zh) * | 2023-08-09 | 2023-11-14 | 常州聚和新材料股份有限公司 | 一种适配N型TOPCon电池背面薄Poly层的细栅银浆及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066621A (en) * | 1990-06-21 | 1991-11-19 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
EP0463826A1 (en) * | 1990-06-21 | 1992-01-02 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
WO1992000924A1 (en) * | 1990-07-09 | 1992-01-23 | Cookson Group Plc | Tellurite glass compositions |
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
US5336644A (en) * | 1993-07-09 | 1994-08-09 | Johnson Matthey Inc. | Sealing glass compositions |
CN1873836A (zh) * | 2005-04-14 | 2006-12-06 | E.I.内穆尔杜邦公司 | 制造半导体器件的方法以及用于该方法的导电组合物 |
JP2009099781A (ja) * | 2007-10-17 | 2009-05-07 | Central Glass Co Ltd | 導電性ペースト材料 |
Family Cites Families (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB736073A (en) * | 1955-01-26 | 1955-08-31 | British Thomson Houston Co Ltd | Improvements in glass compositions |
JPS5480596A (en) * | 1977-12-09 | 1979-06-27 | Matsushita Electric Ind Co Ltd | Varistor |
US4293451A (en) | 1978-06-08 | 1981-10-06 | Bernd Ross | Screenable contact structure and method for semiconductor devices |
US4401767A (en) * | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
JPS5933869A (ja) | 1982-08-20 | 1984-02-23 | Hitachi Ltd | 半導体装置用電極材料 |
JPS60140880A (ja) | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
JPS6236040A (ja) | 1985-08-08 | 1987-02-17 | Iwaki Glass Kk | 低融点封着用硝子 |
JPH01138150A (ja) | 1987-11-25 | 1989-05-31 | Ohara Inc | 低融性ガラス |
US4945071A (en) | 1989-04-19 | 1990-07-31 | National Starch And Chemical Investment Holding Company | Low softening point metallic oxide glasses suitable for use in electronic applications |
JPH03218943A (ja) | 1989-11-28 | 1991-09-26 | Matsushita Electric Ind Co Ltd | 封着ガラス |
US5245492A (en) * | 1989-11-28 | 1993-09-14 | Matsushita Electric Industrial Co., Ltd. | Magnetic head |
US5013697A (en) | 1990-06-21 | 1991-05-07 | Johnson Matthey Inc. | Sealing glass compositions |
US5118362A (en) | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
JPH0762557B2 (ja) | 1991-07-02 | 1995-07-05 | 株式会社ノーリツ | 空気調和機の据付装置 |
US5240884A (en) | 1991-09-05 | 1993-08-31 | Johnson Matthey, Inc. | Silver-glass die attach paste |
JP3148303B2 (ja) | 1991-10-18 | 2001-03-19 | 株式会社住田光学ガラス | 耐熱耐真空用光学繊維束の製造方法 |
JPH05175254A (ja) | 1991-12-20 | 1993-07-13 | Nippon Electric Glass Co Ltd | 低融点接着組成物 |
US5594406A (en) * | 1992-02-25 | 1997-01-14 | Matsushita Electric Industrial Co., Ltd. | Zinc oxide varistor and process for the production thereof |
JPH05259201A (ja) * | 1992-03-11 | 1993-10-08 | Nec Corp | 半導体装置及びその製造方法 |
US5334558A (en) | 1992-10-19 | 1994-08-02 | Diemat, Inc. | Low temperature glass with improved thermal stress properties and method of use |
US5663109A (en) | 1992-10-19 | 1997-09-02 | Quantum Materials, Inc. | Low temperature glass paste with high metal to glass ratio |
JPH0897011A (ja) | 1994-09-26 | 1996-04-12 | Matsushita Electric Ind Co Ltd | 酸化亜鉛バリスタ用電極材料 |
JP3541070B2 (ja) | 1994-11-15 | 2004-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 自動車ガラスの厚膜導電体ペースト |
JP3624482B2 (ja) | 1995-09-22 | 2005-03-02 | 株式会社村田製作所 | 導電性ペーストおよびそれを用いた蛍光表示管 |
US5820639A (en) * | 1996-09-20 | 1998-10-13 | Bolder Technologies Corporation | Method of manufacturing lead acid cell paste having tin compounds |
JPH10340621A (ja) * | 1997-06-05 | 1998-12-22 | Tanaka Kikinzoku Kogyo Kk | 導体ペースト |
JP3740251B2 (ja) | 1997-06-09 | 2006-02-01 | キヤノン株式会社 | 太陽電池モジュールの製造方法 |
JP2003502300A (ja) | 1999-06-11 | 2003-01-21 | メルク エンド カムパニー インコーポレーテッド | 1−(3,5−ビス(トリフルオロメチル)−フェニル)エタン−1−オンの合成プロセス |
JP2001284754A (ja) | 2000-03-30 | 2001-10-12 | Kyocera Corp | ガラスセラミック回路基板 |
JP2001313400A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 太陽電池素子の形成方法 |
JP4487596B2 (ja) | 2004-02-27 | 2010-06-23 | Tdk株式会社 | 積層セラミック電子部品用の積層体ユニットの製造方法 |
JP4846219B2 (ja) * | 2004-09-24 | 2011-12-28 | シャープ株式会社 | 結晶シリコン太陽電池の製造方法 |
US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
US7462304B2 (en) | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7435361B2 (en) | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
US7771623B2 (en) | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
KR100685845B1 (ko) * | 2005-10-21 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 및 그 제조방법 |
EP1997813B1 (en) | 2006-03-10 | 2010-05-05 | Nissan Chemical Industries, Ltd. | Substituted isoxazoline compound and pest control agent |
EP2015367A4 (en) | 2006-04-25 | 2011-10-05 | Sharp Kk | ELECTRO-CONDUCTIVE PASTE FOR A SOLAR BATTERY ELECTRODE |
US7783195B2 (en) * | 2006-07-07 | 2010-08-24 | Scientific-Atlanta, Llc | Format converter with smart multitap with digital forward and reverse |
JP4918182B2 (ja) | 2006-09-26 | 2012-04-18 | Hoya株式会社 | ガラス成形体の製造方法及び製造装置、並びに光学素子の製造方法 |
CN101164943A (zh) * | 2006-10-19 | 2008-04-23 | 北京印刷学院 | 一种用作电子浆料组成中粘接相的无铅碲酸盐低熔玻璃 |
CN100408256C (zh) | 2006-11-26 | 2008-08-06 | 常熟市华银焊料有限公司 | 一种含镓、铟、镍和铈的无镉银钎料 |
US9093590B2 (en) | 2006-12-26 | 2015-07-28 | Kyocera Corporation | Solar cell and solar cell manufacturing method |
KR100787463B1 (ko) | 2007-01-05 | 2007-12-26 | 삼성에스디아이 주식회사 | 글래스 프릿, 실링재 형성용 조성물, 발광 장치 및 발광 장치의 제조방법 |
JP5220335B2 (ja) | 2007-04-11 | 2013-06-26 | 信越化学工業株式会社 | Soi基板の製造方法 |
US7731868B2 (en) * | 2007-04-12 | 2010-06-08 | E.I. Du Pont De Nemours And Company | Thick film conductive composition and process for use in the manufacture of semiconductor device |
CN101663711B (zh) | 2007-04-25 | 2013-02-27 | 费罗公司 | 含银和镍或银和镍合金的厚膜导体配方及由其制成的太阳能电池 |
WO2009052356A2 (en) | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
JP2009099871A (ja) * | 2007-10-18 | 2009-05-07 | Toppan Printing Co Ltd | リードフレーム及びその製造方法並びに樹脂封止型半導体装置及びその製造方法 |
US7736546B2 (en) | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
JP5525714B2 (ja) | 2008-02-08 | 2014-06-18 | 日立粉末冶金株式会社 | ガラス組成物 |
KR20110003360A (ko) | 2008-04-09 | 2011-01-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 |
US7608206B1 (en) | 2008-04-18 | 2009-10-27 | E.I. Dupont De Nemours & Company | Non-lead resistor composition |
US8158504B2 (en) * | 2008-05-30 | 2012-04-17 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components |
KR101225909B1 (ko) | 2008-08-07 | 2013-01-24 | 교토 에렉스 가부시키가이샤 | 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 |
JP5414409B2 (ja) | 2009-01-16 | 2014-02-12 | 日立粉末冶金株式会社 | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
US8895460B2 (en) | 2009-03-27 | 2014-11-25 | Hitachi Powdered Metals Co., Ltd. | Glass composition, electrically conductive paste composition comprising same, electrode wiring member, and electronic component |
CN102318013B (zh) | 2009-03-27 | 2014-12-03 | 株式会社日立制作所 | 导电性浆料及具备使用其的电极配线的电子部件 |
JP5567785B2 (ja) | 2009-03-31 | 2014-08-06 | 三菱マテリアル株式会社 | 導電性組成物及びそれを用いた太陽電池の製造方法 |
JP2010251645A (ja) | 2009-04-20 | 2010-11-04 | Namics Corp | 太陽電池及びその電極形成用導電性ペースト |
WO2010123967A2 (en) | 2009-04-22 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
US7910393B2 (en) | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
JP2011018425A (ja) | 2009-07-10 | 2011-01-27 | Showa Denko Kk | 磁気記録媒体の製造方法及び磁気記録再生装置 |
JP5559509B2 (ja) | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
JP5559510B2 (ja) | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
CN102770963B (zh) | 2010-02-08 | 2016-02-03 | E·I·内穆尔杜邦公司 | 用于制备mwt硅太阳能电池的方法 |
EP2566823B1 (en) | 2010-05-04 | 2016-10-05 | E. I. du Pont de Nemours and Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
WO2012099877A1 (en) | 2011-01-18 | 2012-07-26 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste compositions and solar cell electrodes and contacts made therefrom |
US20130049148A1 (en) | 2011-02-22 | 2013-02-28 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
JP5048142B2 (ja) | 2011-03-04 | 2012-10-17 | 日本電産コパル株式会社 | カメラ装置 |
JP2014512073A (ja) | 2011-03-24 | 2014-05-19 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 導電性ペースト組成物およびそれで製造される半導体デバイス |
US8512463B2 (en) | 2011-04-05 | 2013-08-20 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices |
US8696948B2 (en) | 2011-08-11 | 2014-04-15 | E I Du Pont De Nemours And Company | Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices |
US9023254B2 (en) | 2011-10-20 | 2015-05-05 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
US8771554B2 (en) | 2011-10-20 | 2014-07-08 | E I Du Pont De Nemours And Company | Thick film silver paste containing Al2O3 and lead-tellurium—oxide and its use in the manufacture of semiconductor devices |
US20130186463A1 (en) | 2011-12-06 | 2013-07-25 | E I Du Pont De Nemours And Company | Conductive silver paste for a metal-wrap-through silicon solar cell |
CN102496404B (zh) | 2011-12-27 | 2013-10-30 | 华东理工大学 | 一种高效晶硅太阳电池用电极银浆 |
US9087937B2 (en) | 2012-05-10 | 2015-07-21 | E I Du Pont De Nemours And Company | Glass composition and its use in conductive silver paste |
US8969709B2 (en) | 2012-08-30 | 2015-03-03 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
JP5756447B2 (ja) | 2012-10-31 | 2015-07-29 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
JP2015216355A (ja) | 2014-04-23 | 2015-12-03 | 日東電工株式会社 | 波長変換部材およびその製造方法 |
CN104726085A (zh) | 2014-07-02 | 2015-06-24 | 济南大学 | 一种核壳结构量子点复合纳米晶荧光探针及制备方法 |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
-
2011
- 2011-05-04 EP EP11731162.1A patent/EP2566823B1/en active Active
- 2011-05-04 KR KR1020187010658A patent/KR102048388B1/ko active IP Right Grant
- 2011-05-04 US US13/100,540 patent/US8889979B2/en active Active
- 2011-05-04 EP EP16154516.5A patent/EP3070062A1/en active Pending
- 2011-05-04 EP EP11731163.9A patent/EP2566824B1/en active Active
- 2011-05-04 TW TW100115705A patent/TWI498308B/zh active
- 2011-05-04 EP EP11731539.0A patent/EP2566826B1/en active Active
- 2011-05-04 KR KR1020157032496A patent/KR20150133297A/ko not_active Application Discontinuation
- 2011-05-04 KR KR1020127031579A patent/KR101569566B1/ko active IP Right Grant
- 2011-05-04 TW TW100115700A patent/TWI589649B/zh active
- 2011-05-04 WO PCT/US2011/035145 patent/WO2011140192A1/en active Application Filing
- 2011-05-04 JP JP2013509210A patent/JP5746325B2/ja active Active
- 2011-05-04 US US13/100,619 patent/US20110232747A1/en not_active Abandoned
- 2011-05-04 JP JP2013509209A patent/JP5711359B2/ja active Active
- 2011-05-04 US US13/100,563 patent/US8889980B2/en active Active
- 2011-05-04 KR KR1020127031581A patent/KR101569568B1/ko active IP Right Grant
- 2011-05-04 CN CN201710681515.6A patent/CN107424662B/zh active Active
- 2011-05-04 KR KR1020127031582A patent/KR20130016346A/ko not_active Application Discontinuation
- 2011-05-04 WO PCT/US2011/035131 patent/WO2011140185A1/en active Application Filing
- 2011-05-04 CN CN201180032359.1A patent/CN102958861B/zh active Active
- 2011-05-04 CN CN201180031225.8A patent/CN103038186B/zh active Active
- 2011-05-04 KR KR1020197034102A patent/KR102177050B1/ko active IP Right Grant
- 2011-05-04 CN CN201811172520.5A patent/CN109014180B/zh active Active
- 2011-05-04 US US13/100,533 patent/US8497420B2/en active Active
- 2011-05-04 KR KR1020127031580A patent/KR101569567B1/ko active IP Right Grant
- 2011-05-04 WO PCT/US2011/035167 patent/WO2011140205A1/en active Application Filing
- 2011-05-04 ES ES11731163T patent/ES2570133T3/es active Active
- 2011-05-04 CN CN201180031184.2A patent/CN102947235B/zh active Active
- 2011-05-04 JP JP2013509214A patent/JP5782112B2/ja active Active
- 2011-05-04 WO PCT/US2011/035139 patent/WO2011140189A1/en active Application Filing
- 2011-05-04 WO PCT/US2011/035154 patent/WO2011140197A1/en active Application Filing
- 2011-05-04 TW TW100115704A patent/TWI611428B/zh active
- 2011-05-04 JP JP2013509212A patent/JP5480448B2/ja active Active
- 2011-05-04 US US13/100,550 patent/US8895843B2/en active Active
- 2011-05-04 CN CN201180032701.8A patent/CN102971268B/zh active Active
- 2011-05-04 TW TW100115703A patent/TWI564351B/zh active
- 2011-05-04 EP EP11731537.4A patent/EP2566825B1/en active Active
-
2013
- 2013-03-13 US US13/800,592 patent/US10069020B2/en active Active
- 2013-03-13 US US13/801,036 patent/US20130255769A1/en not_active Abandoned
- 2013-03-13 US US13/801,248 patent/US9722100B2/en active Active
- 2013-03-13 US US13/800,861 patent/US10559703B2/en active Active
- 2013-06-25 HK HK13107433.5A patent/HK1180295A1/zh unknown
- 2013-07-09 HK HK13107991.9A patent/HK1180672A1/zh unknown
-
2017
- 2017-06-23 US US15/631,005 patent/US10468542B2/en active Active
-
2018
- 2018-02-13 US US15/895,067 patent/US11043605B2/en active Active
-
2019
- 2019-09-20 US US16/577,602 patent/US11158746B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066621A (en) * | 1990-06-21 | 1991-11-19 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
EP0463826A1 (en) * | 1990-06-21 | 1992-01-02 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
WO1992000924A1 (en) * | 1990-07-09 | 1992-01-23 | Cookson Group Plc | Tellurite glass compositions |
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
US5336644A (en) * | 1993-07-09 | 1994-08-09 | Johnson Matthey Inc. | Sealing glass compositions |
CN1873836A (zh) * | 2005-04-14 | 2006-12-06 | E.I.内穆尔杜邦公司 | 制造半导体器件的方法以及用于该方法的导电组合物 |
JP2009099781A (ja) * | 2007-10-17 | 2009-05-07 | Central Glass Co Ltd | 導電性ペースト材料 |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347151A (zh) * | 2013-08-02 | 2015-02-11 | 上海匡宇电子技术有限公司 | 一种导电银浆及其制备方法 |
CN105593946B (zh) * | 2013-08-28 | 2018-10-16 | 三星Sdi株式会社 | 形成太阳能电池电极用组成物及使用该组成物制造的电极 |
US9944802B2 (en) | 2013-08-28 | 2018-04-17 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrode and electrode produced from same |
CN105593946A (zh) * | 2013-08-28 | 2016-05-18 | 三星Sdi株式会社 | 形成太阳能电池电极用组成物及使用该组成物制造的电极 |
CN103545016B (zh) * | 2013-10-21 | 2016-06-29 | 深圳市首骋新材料科技有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
CN103545016A (zh) * | 2013-10-21 | 2014-01-29 | 深圳首创光伏有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
CN103606393A (zh) * | 2013-11-08 | 2014-02-26 | 江苏科技大学 | 一种太阳能电池背银导电银浆组合物及制备方法 |
CN103606393B (zh) * | 2013-11-08 | 2016-01-06 | 江苏科技大学 | 一种太阳能电池背银导电银浆组合物及制备方法 |
CN104733074A (zh) * | 2013-12-20 | 2015-06-24 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的电极 |
CN104795126A (zh) * | 2014-01-17 | 2015-07-22 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有改进的粘着性能的铅-铋-碲-硅酸盐无机反应体系 |
CN105939976A (zh) * | 2014-01-28 | 2016-09-14 | 东进世美肯株式会社 | 玻璃组合物和使用该玻璃组合物的太阳能电池用电极组合物 |
CN104867535B (zh) * | 2014-02-26 | 2017-11-28 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 太阳能电池浆料中的包含钨和铅的玻璃 |
CN104867535A (zh) * | 2014-02-26 | 2015-08-26 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 太阳能电池浆料中的包含钨和铅的玻璃 |
US9734929B2 (en) | 2014-05-15 | 2017-08-15 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrode and electrode prepared using the same |
CN105097067A (zh) * | 2014-05-15 | 2015-11-25 | 三星Sdi株式会社 | 用于形成太阳电池电极的组合物及使用其制备的电极 |
CN105097067B (zh) * | 2014-05-15 | 2017-11-14 | 三星Sdi株式会社 | 用于形成太阳电池电极的组合物及使用其制备的电极 |
CN107004457A (zh) * | 2014-11-27 | 2017-08-01 | 株式会社则武 | 导电性组合物 |
CN105632589A (zh) * | 2016-03-18 | 2016-06-01 | 苏州开元民生科技股份有限公司 | 一种高储热晶硅太阳能背电极银浆及其制备方法 |
CN108883965A (zh) * | 2016-04-07 | 2018-11-23 | 贺利氏贵金属北美康舍霍肯有限责任公司 | 用于硅太阳能电池的金属化浆料中的含卤化物玻璃 |
CN107274963A (zh) * | 2017-05-31 | 2017-10-20 | 深圳市春仰科技有限公司 | 硅太阳能电池正面导电银浆及其制备方法 |
CN107274963B (zh) * | 2017-05-31 | 2019-05-24 | 深圳磐汩新能源有限公司 | 硅太阳能电池正面导电银浆及其制备方法 |
CN109336594A (zh) * | 2018-10-26 | 2019-02-15 | 贵州振华电子信息产业技术研究有限公司 | 低电容变化率压电陶瓷元件、压电陶瓷及其制作方法 |
CN109336594B (zh) * | 2018-10-26 | 2021-10-01 | 贵州振华电子信息产业技术研究有限公司 | 低电容变化率压电陶瓷元件、压电陶瓷及其制作方法 |
WO2020118781A1 (zh) * | 2018-12-11 | 2020-06-18 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的导电银浆和太阳能电池 |
CN111302620A (zh) * | 2018-12-11 | 2020-06-19 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的导电银浆和太阳能电池 |
CN111354503A (zh) * | 2018-12-24 | 2020-06-30 | 东泰高科装备科技有限公司 | 一种柔性薄膜太阳能电池组件用导电银浆及其制备方法 |
CN113072303A (zh) * | 2021-03-29 | 2021-07-06 | 浙江奕成科技有限公司 | 一种太阳能电池导电银浆用玻璃粉形貌改变方法 |
CN112992401A (zh) * | 2021-04-25 | 2021-06-18 | 西安宏星电子浆料科技股份有限公司 | 一种可无损调阻的电阻浆料 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102958861B (zh) | 包含铅-碲-锂-钛-氧化物的厚膜浆料以及它们在制造半导体装置中的用途 | |
CN103681949B (zh) | 包含铅‑碲基氧化物的导电组合物在具有轻掺杂发射器的半导体装置的制造中的用途 | |
CN103703518B (zh) | 包含Li2RuO3和离子交换Li2RuO3的导电组合物以及它们在半导体器件制造中的用途 | |
CN103219063A (zh) | 包含铜和铅-碲-氧化物的厚膜银浆及其在半导体装置制造中的用途 | |
CN103578600A (zh) | 包含铅-钒基氧化物的厚膜浆料及其在半导体装置制造中的用途 | |
CN105702321A (zh) | 用于太阳能电池电极的导电糊料 | |
CN105940455A (zh) | 导电糊料组合物及由其制成的半导体器件 | |
CN104756196A (zh) | 厚膜银浆及其在制造半导体器件中的用途 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1180671 Country of ref document: HK |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1180671 Country of ref document: HK |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201222 Address after: Delaware, USA Patentee after: DuPont Electronics Address before: Delaware, USA Patentee before: E.I. Nemours DuPont |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210423 Address after: Delaware, USA Patentee after: Sun paster Co.,Ltd. Address before: Delaware, USA Patentee before: DuPont Electronics |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20130313 Assignee: Jiangsu SOTE Electronic Material Co.,Ltd. Assignor: Sun paster Co.,Ltd. Contract record no.: X2021990000521 Denomination of invention: Thick film pastes containing lead tellurium lithium oxide and their use in semiconductor device manufacturing Granted publication date: 20170606 License type: Common License Record date: 20210826 |
|
EE01 | Entry into force of recordation of patent licensing contract |