JP5937904B2 - 太陽電池電極用ペースト組成物 - Google Patents
太陽電池電極用ペースト組成物 Download PDFInfo
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- JP5937904B2 JP5937904B2 JP2012143487A JP2012143487A JP5937904B2 JP 5937904 B2 JP5937904 B2 JP 5937904B2 JP 2012143487 A JP2012143487 A JP 2012143487A JP 2012143487 A JP2012143487 A JP 2012143487A JP 5937904 B2 JP5937904 B2 JP 5937904B2
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- 239000000203 mixture Substances 0.000 title claims description 96
- 239000011521 glass Substances 0.000 claims description 185
- 239000000843 powder Substances 0.000 claims description 27
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 239000002003 electrode paste Substances 0.000 claims description 22
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 16
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 14
- 239000010408 film Substances 0.000 description 41
- 230000001965 increasing effect Effects 0.000 description 40
- 239000011701 zinc Substances 0.000 description 35
- 239000010936 titanium Substances 0.000 description 34
- 239000000758 substrate Substances 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000002245 particle Substances 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 239000005355 lead glass Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 238000010304 firing Methods 0.000 description 20
- 230000003628 erosive effect Effects 0.000 description 19
- 230000007423 decrease Effects 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 16
- 229910052709 silver Inorganic materials 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Description
また、前記目的を達成するための第2発明の要旨とするところは、導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池電極用ペースト組成物であって、前記ガラスフリットは、酸化物換算でSnを0.5〜12.0(mol%)、PbOを55〜65(mol%)、B 2 O 3 を1〜8(mol%)、SiO 2 を21〜36(mol%)、P 2 O 5 を1.0〜4.0(mol%)、Bi 2 O 3 を1〜2(mol%)の範囲でそれぞれ含み、Li 2 Oを含まない鉛ガラスを含むことにある。
Claims (2)
- 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池電極用ペースト組成物であって、
前記ガラスフリットは、酸化物換算でSnを0.5〜20.0(mol%)、Li 2 Oを0.6〜18(mol%)、PbOを24〜64(mol%)、B 2 O 3 を1〜18(mol%)、SiO 2 を11〜40(mol%)、P2O5を1.0〜6.0(mol%)、Bi 2 O 3 を1〜15(mol%)の範囲でそれぞれ含む鉛ガラスを含むことを特徴とする太陽電池電極用ペースト組成物。 - 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池電極用ペースト組成物であって、
前記ガラスフリットは、酸化物換算でSnを0.5〜12.0(mol%)、PbOを55〜65(mol%)、B2O3を1〜8(mol%)、SiO2を21〜36(mol%)、P2O5を1.0〜4.0(mol%)、Bi 2 O 3 を1〜2(mol%)の範囲でそれぞれ含み、Li 2 Oを含まない鉛ガラスを含むことを特徴とする太陽電池電極用ペースト組成物。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012143487A JP5937904B2 (ja) | 2012-06-26 | 2012-06-26 | 太陽電池電極用ペースト組成物 |
TW102117883A TW201403627A (zh) | 2012-06-26 | 2013-05-21 | 太陽電池電極用糊組成物 |
CN201310259487.0A CN103515459A (zh) | 2012-06-26 | 2013-06-26 | 太阳能电池电极用糊组合物 |
Applications Claiming Priority (1)
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JP2012143487A JP5937904B2 (ja) | 2012-06-26 | 2012-06-26 | 太陽電池電極用ペースト組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014007347A JP2014007347A (ja) | 2014-01-16 |
JP5937904B2 true JP5937904B2 (ja) | 2016-06-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012143487A Expired - Fee Related JP5937904B2 (ja) | 2012-06-26 | 2012-06-26 | 太陽電池電極用ペースト組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5937904B2 (ja) |
CN (1) | CN103515459A (ja) |
TW (1) | TW201403627A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6046753B2 (ja) * | 2014-01-17 | 2016-12-21 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系 |
KR101691694B1 (ko) * | 2014-03-18 | 2016-12-30 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN105924015B (zh) * | 2016-06-24 | 2019-02-19 | 常州聚和新材料股份有限公司 | 一种低熔点的玻璃料及由其制备的银浆 |
KR102441705B1 (ko) * | 2018-08-23 | 2022-09-07 | 소에이 가가쿠 고교 가부시키가이샤 | 적층 세라믹 전자부품의 외부 전극 형성용 도전성 페이스트 |
KR102539378B1 (ko) * | 2020-11-06 | 2023-06-05 | 엘에스엠앤엠 주식회사 | 태양전지 전극용 도전성 페이스트 및 이를 사용하여 제조된 태양전지 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5652805A (en) * | 1979-10-03 | 1981-05-12 | Tanaka Massey Kk | Conductive composition |
JP5528653B2 (ja) * | 2006-08-09 | 2014-06-25 | 信越半導体株式会社 | 半導体基板並びに電極の形成方法及び太陽電池の製造方法 |
KR20110016986A (ko) * | 2008-06-26 | 2011-02-18 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광전지용 전도체에 사용되는 유리 조성물 |
TW201115592A (en) * | 2009-06-19 | 2011-05-01 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
JP2011066353A (ja) * | 2009-09-18 | 2011-03-31 | Noritake Co Ltd | 太陽電池用アルミニウムペースト |
US8895843B2 (en) * | 2010-05-04 | 2014-11-25 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
JP5351100B2 (ja) * | 2010-07-02 | 2013-11-27 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
-
2012
- 2012-06-26 JP JP2012143487A patent/JP5937904B2/ja not_active Expired - Fee Related
-
2013
- 2013-05-21 TW TW102117883A patent/TW201403627A/zh unknown
- 2013-06-26 CN CN201310259487.0A patent/CN103515459A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201403627A (zh) | 2014-01-16 |
JP2014007347A (ja) | 2014-01-16 |
CN103515459A (zh) | 2014-01-15 |
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