JP5856178B2 - 太陽電池用無鉛導電性ペースト組成物 - Google Patents
太陽電池用無鉛導電性ペースト組成物 Download PDFInfo
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- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
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- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
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- 239000004254 Ammonium phosphate Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
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- 239000000956 alloy Substances 0.000 description 1
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- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
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- 230000001502 supplementing effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
また、前記目的を達成するための第2発明の要旨とするところは、導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池用無鉛導電性ペースト組成物であって、前記ガラスフリットが酸化物換算で全ガラス組成物に対して、10〜32(mol%)のBi 2 O 3 と、15〜30(mol%)のZnOと、15〜26(mol%)のSiO 2 と、5〜18(mol%)のB 2 O 3 と、合計で12〜25(mol%)のLi 2 O、Na 2 O、K 2 Oと、2〜10(mol%)のAl 2 O 3 と、0〜6(mol%)のTiO 2 と、0〜5(mol%)のZrO 2 と、0〜6(mol%)のP 2 O 5 および0〜4(mol%)のSb 2 O 3 を合計で0〜6(mol%)と、0.1〜5(mol%)のCeO 2 とを、それぞれ示した範囲内の割合で含む少なくとも一種の無鉛ガラスから成ることにある。
FF変化率(%) =耐湿試験後FF/耐湿試験前FF×100
Claims (3)
- 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池用無鉛導電性ペースト組成物であって、
前記ガラスフリットが酸化物換算で全ガラス組成物に対して、10〜32(mol%)のBi2O3と、15〜30(mol%)のZnOと、15〜26(mol%)のSiO2と、5〜18(mol%)のB2O3と、合計で12〜25(mol%)のLi2O、Na2O、K2Oと、2〜10(mol%)のAl2O3と、0〜6(mol%)のTiO2と、0〜5(mol%)のZrO2と、0〜6(mol%)のP2O5および0〜4(mol%)のSb2O3を合計で 0〜6(mol%)と、0〜5(mol%)のCeO2と、0.1〜6(mol%)のSO 2 とを、それぞれ示した範囲内の割合で含む少なくとも一種の無鉛ガラスから成ることを特徴とする太陽電池用無鉛導電性ペースト組成物。 - 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池用無鉛導電性ペースト組成物であって、
前記ガラスフリットが酸化物換算で全ガラス組成物に対して、10〜32(mol%)のBi 2 O 3 と、15〜30(mol%)のZnOと、15〜26(mol%)のSiO 2 と、5〜18(mol%)のB 2 O 3 と、合計で12〜25(mol%)のLi 2 O、Na 2 O、K 2 Oと、2〜10(mol%)のAl 2 O 3 と、0〜6(mol%)のTiO 2 と、0〜5(mol%)のZrO 2 と、0〜6(mol%)のP 2 O 5 および0〜4(mol%)のSb 2 O 3 を合計で 0〜6(mol%)と、0.1〜5(mol%)のCeO 2 とを、それぞれ示した範囲内の割合で含む少なくとも一種の無鉛ガラスから成ることを特徴とする太陽電池用無鉛導電性ペースト組成物。 - 前記無鉛ガラスは、酸化物換算で全ガラス組成物に対して、BaO、CaO、MgO、SrOの一種以上を合計で20(mol%)以下の範囲内で含むものである請求項1または請求項2の太陽電池用無鉛導電性ペースト組成物。
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Application Number | Priority Date | Filing Date | Title |
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JP2013536024A JP5856178B2 (ja) | 2011-09-29 | 2012-07-27 | 太陽電池用無鉛導電性ペースト組成物 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2011215443 | 2011-09-29 | ||
JP2011215443 | 2011-09-29 | ||
PCT/JP2012/069258 WO2013046903A1 (ja) | 2011-09-29 | 2012-07-27 | 太陽電池用無鉛導電性ペースト組成物 |
JP2013536024A JP5856178B2 (ja) | 2011-09-29 | 2012-07-27 | 太陽電池用無鉛導電性ペースト組成物 |
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US (1) | US20140239238A1 (ja) |
JP (1) | JP5856178B2 (ja) |
KR (1) | KR20140090607A (ja) |
CN (1) | CN103827052B (ja) |
DE (1) | DE112012004085T5 (ja) |
TW (1) | TWI543955B (ja) |
WO (1) | WO2013046903A1 (ja) |
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WO2013011986A1 (ja) * | 2011-07-19 | 2013-01-24 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
CN103193391B (zh) * | 2013-04-16 | 2015-05-06 | 江苏太阳新材料科技有限公司 | 晶体硅太阳能电池背面银浆用无铅玻璃粉及其制备方法 |
JP6155965B2 (ja) * | 2013-08-23 | 2017-07-05 | 旭硝子株式会社 | 電極形成用ガラス粉末および電極形成用導電ペースト |
JP2015050349A (ja) * | 2013-09-02 | 2015-03-16 | 株式会社ノリタケカンパニーリミテド | 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト |
CN103440900B (zh) * | 2013-09-10 | 2016-06-15 | 乐凯胶片股份有限公司 | 一种晶体硅太阳能电池用无铅正银浆料 |
CN104150775A (zh) * | 2014-08-01 | 2014-11-19 | 东华大学 | 一种用于光伏电池导电浆料的低熔点碲系玻璃及制备方法 |
CN104150777A (zh) * | 2014-08-07 | 2014-11-19 | 贵阳晶华电子材料有限公司 | 一种用于太阳能正电极银浆料中的含碲玻璃及其制备方法 |
US10000645B2 (en) | 2015-11-24 | 2018-06-19 | PLANT PV, Inc. | Methods of forming solar cells with fired multilayer film stacks |
WO2017091782A1 (en) * | 2015-11-24 | 2017-06-01 | Plant Pv, Inc | Fired multilayer stacks for use in integrated circuits and solar cells |
KR102370946B1 (ko) * | 2017-02-10 | 2022-03-08 | 현대자동차주식회사 | 연료 센더용 전극 페이스트 및 그 제조방법 |
CN106952674B (zh) * | 2017-02-24 | 2019-02-19 | 哈尔滨工业大学深圳研究生院 | 一种可低温烧结布线的厚膜导电浆料及其应用 |
JP6825948B2 (ja) * | 2017-03-17 | 2021-02-03 | 東洋アルミニウム株式会社 | 太陽電池用ペースト組成物 |
WO2018221578A1 (ja) * | 2017-05-31 | 2018-12-06 | 東洋アルミニウム株式会社 | 太陽電池用ペースト組成物 |
KR20190005463A (ko) * | 2017-07-06 | 2019-01-16 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN112041994B (zh) * | 2018-03-30 | 2022-06-21 | 深圳市首骋新材料科技有限公司 | 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池 |
CN110545617B (zh) * | 2019-09-11 | 2023-06-30 | 杭州华光焊接新材料股份有限公司 | 一种陶瓷线路板用电极银浆 |
CN113087401A (zh) * | 2021-04-30 | 2021-07-09 | 江西师范大学 | 晶体硅太阳能电池用无铅无铋玻璃粉及其制备方法 |
WO2023190282A1 (ja) * | 2022-03-28 | 2023-10-05 | ナミックス株式会社 | 導電性ペースト、太陽電池及び太陽電池の製造方法 |
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US5922627A (en) * | 1997-10-17 | 1999-07-13 | National Starch And Chemical Investment Holding Corporation | Low resistivity palladium-silver compositions |
WO2001004705A1 (fr) * | 1999-07-12 | 2001-01-18 | Taiyo Ink Manufacturing Co., Ltd. | Composition photodurcissable a developpement alcalin et motif de matiere cuite en etant fait |
JP4300786B2 (ja) * | 2001-12-21 | 2009-07-22 | 昭栄化学工業株式会社 | ガラスおよびこれを用いた導体ペースト |
US7176152B2 (en) * | 2004-06-09 | 2007-02-13 | Ferro Corporation | Lead-free and cadmium-free conductive copper thick film pastes |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
JP2009020061A (ja) * | 2007-07-13 | 2009-01-29 | Denso Corp | 力学量センサ素子 |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
WO2009027993A1 (en) * | 2007-08-29 | 2009-03-05 | Council Of Scientific & Industrial Research | Proton conducting polymer electrolyte membrane useful in polymer electrolyte fuel cells |
EP2203921A1 (en) * | 2007-10-18 | 2010-07-07 | E. I. du Pont de Nemours and Company | Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials |
JP5016631B2 (ja) * | 2009-03-31 | 2012-09-05 | 株式会社ノリタケカンパニーリミテド | プラズマディスプレイパネルおよび該パネルの電極形成用ペースト |
US8252204B2 (en) * | 2009-12-18 | 2012-08-28 | E I Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
JP5279699B2 (ja) * | 2009-12-28 | 2013-09-04 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
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- 2012-07-27 US US14/348,806 patent/US20140239238A1/en not_active Abandoned
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US20140239238A1 (en) | 2014-08-28 |
KR20140090607A (ko) | 2014-07-17 |
CN103827052B (zh) | 2016-08-24 |
WO2013046903A1 (ja) | 2013-04-04 |
CN103827052A (zh) | 2014-05-28 |
JPWO2013046903A1 (ja) | 2015-03-26 |
TW201313649A (zh) | 2013-04-01 |
TWI543955B (zh) | 2016-08-01 |
DE112012004085T5 (de) | 2014-07-31 |
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