CN1020290C - 化学汽相淀积装置 - Google Patents
化学汽相淀积装置 Download PDFInfo
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- CN1020290C CN1020290C CN87106283A CN87106283A CN1020290C CN 1020290 C CN1020290 C CN 1020290C CN 87106283 A CN87106283 A CN 87106283A CN 87106283 A CN87106283 A CN 87106283A CN 1020290 C CN1020290 C CN 1020290C
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000002826 coolant Substances 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 description 24
- 239000010408 film Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical group [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Abstract
一种改进的用于沉积均匀薄膜的CVD装置。该装置包括一个反应室,一个底物支持器和多个用于光化CVD的光源,或一对用于等离子体CVD的电极。底物支持器是被光源包围的圆筒形底物加热车,并且是由驱动装置带动绕轴自转。利用这种配置,应用光或等离子体可使装在加热车上的底物及其周围,从而使整个待覆涂表面均匀地进行激发。
Description
本发明涉及光化增强化学汽相淀积装置。
可采用多种化学汽相淀积(CVD)方法,如在底物上淀积薄膜的气压化学汽相淀积(APCVD)、低压化学汽相淀积(LPCVD)、等离子体化学汽相淀积(plasma CVD)、热化学汽相淀积(thermal CVD)等。虽然这些方法各有特点,但每种方法实施的温度一般是相当高的,如此高温法是不适于在铝电极设备形成钝化膜。
由于光化增强CVD法可在较低温度下实施,因而引起人们的兴趣。这种方法利用光能,即进行光学反应,例如在用硅烷和氨的光化CVD法的情况下,汞原子受波长2537
紫外线照射激发,按下述反应式在底物上淀积氮化硅薄膜:
在以上反应式中,x、y和z应适当地选择。
图1是光化CVD装置的断面图,它是由本发明前的发明者设计的。为助于理解本发明背景,简要地解释一下这个装置。图中,该装置包括反应室31、光源室39和紫外线源41。在各个光源室39之间,装有底物加热车(cart)35,它能朝垂直于图面方向移动。该加热车35提供加热器37,用于加热安装在面向光源室39的加热车35外表面上的底物,使底物33的温度上升至约200℃,该温度适于形成氮化硅薄膜。反应气体在百分之
几个帕的压力下循环于反应室31中,来自光源41的辐射光通过石英窗47照射反应气体,数字45表示电极,由于该电极与作为另一电极的加热车而产生放电,沉积在石英窗47表面的不需要的产物,可通过溅射除去。
然而,就这种装置而言,沉积薄膜的厚度取决于光源和底物位置之间的空间关系。即CVD方法的产物在较强光照射的位置沉积较厚。一般说来,薄膜厚度变化的容许偏差约10%,此外,石英窗47的厚度必须足以承受反应室31内与光源室39(冷却气在其中循环)之间的差压,该差压可能引起冷却气体从光源室39向反应室31的泄漏。另外一种方法是,可为光源室设置特殊的冷却系统,使光源室的压力降低,因此减小差压。此外,当要求加热车35和反应室31之间进行放电,并通过溅射除去沉积在光源室窗上不需要的薄膜时,这种放电往往导致偏离光源窗。由于这种原因,必须装置特殊的电极45以致使装置的尺寸扩大。
关于用CVD沉积薄膜的不均匀性,在等离子体CVD情况下也是个问题。等离子体的能量似乎取决于底物和一对放电电极之间的关系。因此等离子体CVD也需有在涂覆底物上形成均匀定积的条件。
因此本发明的一个目的为提供能沉积厚度均匀薄膜的CVD装置。
本发明的另一个目的为提供能沉积优质薄膜的CVD装置。
本发明的再一个目的为提供一种较经济的CVD装置。
本发明的又一个目的为提供一种小型的CVD装置。
图1是光化CVD装置实施例的断面图。
图2是本发明一个实施例的断面图。
图3是沿图2的Ⅲ-Ⅲ线所取的断面图。
图4是本发明的另一个实施例的断面图。
图5(A)至5(C)表示装在具有6、12和24边正多边形截面的棱柱形底物支持器上底物的光照度分布图解示意图。
图6(A)至6(C)和图7表示本发明CVD实施例方法的剖面图。
参照图2和图3,说明本发明的光化增强CVD装置。图中,装置1包括反应室3;用作底物支持器的六角形加热车7,具有六个侧面,其面上置有底物15;带有电机21的驱动装置9,用来使加热车7绕轴自转;在反应室3内加热车7周围等角间隔的每一端装有许多透光的石英套管17,管子的另一端是封闭的;分别在石英管内密封的汞灯19;沿轴向排列的卤灯加热器23;还有反应气体引入系统11和抽空系统13。像氮气一类冷却气体借助于再循环装置29在石英管17内循环。在加热车7的每一面上,可安置两个底物,每个长35厘米、宽30厘米,因此在加热车7上持有12个底物。最好加热车可以驱动装置拆卸,使底物能在反应室3的外面装置。
接着解释装置内的反应。首先,将装在加热车7上的12个底物放入反应室3,用抽空系统13将反应室3抽真空至1.3×100~1.3×10-4帕以后,将反应气体在约400帕气压下从引入系统11输入,同时,通过加热器23将底物15加热至约200℃。然后,由汞灯19包围的加热车7被驱动装置9带动,以2转/分旋转,并接受灯19的紫外线照射,随后,由光能激发的反应产物沉积在底物15上,而沉积在石英管19上不希望有的产物,借助于加热车7和反应室3之间的放电,经溅射除去。例如可按下述反应式实施光化增强CVD法:
现在参照图4,说明本发明的另一实施例。这个实施例与上述实施例相同,所不同的是加热车的侧面数,以及供给的电极49是以圆筒形金属丝网形式配置在加热车7和反应室3之间。加热车具有12个侧面,每一面可持有2个底物。电极49用于在电极本身和加热车7之间经放电产生等离子气体,以及用于侵蚀去除沉积在反应室3内壁上、光源5外表面等不需要的产物,而电极49也可置于光源5和加热车7之间。等离子体
CVD同时可通过光化CVD法产生放电而完成,或通过光化CVD沉积后完成。按下述反应式,用TEOS(四乙基氧硅烷)实施等离子体CVD:
完成在底物上的沉淀并将底物从反应室取出后,借助于加热车7和电极49之间的放电,经侵蚀去除反应室内不需要的沉积产物,按下述反应式进行侵蚀:
为研究底物上光照度的均匀性和加热车侧面数之间的关系,进行下述实验。图5(A)至5(C)表示装在具有6、12和24正多边形截面的棱柱形底物支持器上底物的光照度分布图解示意图。图中,横坐标是测量点离底物中心的距离,纵坐标是根据在底物上测得最大照度值经规范化的照度。正如图中所示,光照度的分布随侧面数的增加而变得更均匀。即在照射面上,光照度波动在六面加热车情况下大于10%,而具有12面和24面加热车情况下,光照度波动限制在5%以内。由于在每个面上安装两个底物,故具有24面的加热车可持有48个底物。
图6(A)至6(C)表示本发明CVD实施例方法的剖面图。提供的待涂复底物表面带有许多铝引线51,如图6(A)所示,这些引线51以垂直于图面方向延伸,引线高0.8微米、宽0.6微米及间隔为0.9微米。如图6(B)所示,按反应式(1),在400℃左右,用光化CVD法在底物引线51上沉积氧化硅薄膜,厚度达0.3~0.5。此外,如图6(C)所示,按反应式(2),在200℃下用等离子体CVD沉积另一层氧化硅薄膜55。由于薄膜53耐较高温度,其绝缘能力极好,而TEOS在较低温度下处于液态,该薄膜提供了一层平滑的上表面。如图7所示,当备有上覆铝电极57时,该平滑的上表面是理想的。由于平滑的表面而减少电极57断开的可能。完成沉积后,通过侵蚀净化反应室内部,如除去沉积在汞灯19上的产物。图6(A)至6(C)仅仅是示意图。为了得到平滑的薄膜表面,或削圆淀积薄膜的棱
边,在等离子体CVD之前或之后,在沉积薄膜上进行侵蚀。
利用这种方法,在每个底物上用光均匀照射,使整个底物15的表面沉积恒定厚度的薄膜。然而,通过调整汞灯19的光照度使其与加热车7的旋转同步,或调整加热车7的角速度与汞灯19的相应位置,可以进一步改进厚度的均匀性。根据本发明要点,很容易理解利用可旋转底物支持器也可改善非光化增强等离子体CVD。
本发明不应局限于以上具体的实施例,熟悉本领域的人可以进行很多改进和变化。如加热车7的断面,可以用其它正多边形或不规则多边形,或圆形。驱动装置也可置于反应室的顶边,或者以传动齿轮置于侧边,代替图2所示的置于底边的位置。
Claims (5)
1、一种光化增强的CVD(化学汽相淀积)装置,该装置包括:一个可抽真空的反应室;用于向所述反应室中引入反应气体的装置;一个安装在所述反应室中的通常为柱形底物的夹持器,所述底物夹持器的外周表面能够夹持住多件底物;多个长形的光源并且围绕该底物夹持器均匀地排布,使之向底物进行照射,其中每一个所述的光源都是以气密方式封在能透光的套管内,并且置于该反应室之内。
2、按权利要求1的CVD装置,其中所述能透光的套管是由石英制成。
3、按权利要求1的CVD装置,其中还包括借助于使气体冷却剂流过所述能透光套管之内而冷却所述光源的装置。
4、按权利要求1的CVD装置,其中所述底物夹持器的内部设置有一个加热器。
5、按权利要求4的CVD装置,其中所述加热器包括一个卤灯。
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JP213324/86 | 1986-09-09 | ||
JP213323/86 | 1986-09-09 | ||
JP21332586A JPS6369977A (ja) | 1986-09-09 | 1986-09-09 | 均一な被膜を形成する為の光cvd装置 |
JP61213323A JPS6367727A (ja) | 1986-09-09 | 1986-09-09 | 光照射機構 |
JP21332486A JPS6369976A (ja) | 1986-09-09 | 1986-09-09 | 光cvd装置 |
JP213325/86 | 1986-09-09 | ||
JP141050/87 | 1987-06-05 | ||
JP62141050A JPS63307279A (ja) | 1987-06-05 | 1987-06-05 | 光化学反応処理装置 |
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-
1987
- 1987-09-05 KR KR1019870009832A patent/KR910003742B1/ko not_active IP Right Cessation
- 1987-09-07 EP EP87307896A patent/EP0260097B1/en not_active Expired - Lifetime
- 1987-09-07 EP EP19920104124 patent/EP0490883A1/en not_active Withdrawn
- 1987-09-07 DE DE8787307896T patent/DE3782991T2/de not_active Expired - Fee Related
- 1987-09-09 CN CN87106283A patent/CN1020290C/zh not_active Expired - Fee Related
-
1988
- 1988-05-16 US US07/194,206 patent/US4950624A/en not_active Expired - Fee Related
-
1998
- 1998-11-10 US US09/188,382 patent/US6013338A/en not_active Expired - Fee Related
-
1999
- 1999-09-17 US US09/398,059 patent/US6520189B1/en not_active Expired - Fee Related
-
2003
- 2003-01-10 US US10/339,631 patent/US20030140941A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE3782991T2 (de) | 1993-04-08 |
US4950624A (en) | 1990-08-21 |
US20030140941A1 (en) | 2003-07-31 |
DE3782991D1 (de) | 1993-01-21 |
EP0260097A1 (en) | 1988-03-16 |
US6013338A (en) | 2000-01-11 |
EP0260097B1 (en) | 1992-12-09 |
EP0490883A1 (en) | 1992-06-17 |
US6520189B1 (en) | 2003-02-18 |
KR910003742B1 (ko) | 1991-06-10 |
KR880004128A (ko) | 1988-06-01 |
CN87106283A (zh) | 1988-03-23 |
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