KR880004128A - Cvd장치 - Google Patents

Cvd장치 Download PDF

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Publication number
KR880004128A
KR880004128A KR870009832A KR870009832A KR880004128A KR 880004128 A KR880004128 A KR 880004128A KR 870009832 A KR870009832 A KR 870009832A KR 870009832 A KR870009832 A KR 870009832A KR 880004128 A KR880004128 A KR 880004128A
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South Korea
Prior art keywords
substrate holder
substrate
reaction chamber
cvd
light source
Prior art date
Application number
KR870009832A
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English (en)
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KR910003742B1 (ko
Inventor
다카시 이누지마
시게노리 하야시
도루 다카야마
세이이치 오다카
나오키 히로세
Original Assignee
야마자끼 순페이
세미콘덕터 에너지 라보라터리 캄파니 리미티드
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Priority claimed from JP21332486A external-priority patent/JPS6369976A/ja
Priority claimed from JP61213323A external-priority patent/JPS6367727A/ja
Priority claimed from JP21332586A external-priority patent/JPS6369977A/ja
Priority claimed from JP62141050A external-priority patent/JPS63307279A/ja
Application filed by 야마자끼 순페이, 세미콘덕터 에너지 라보라터리 캄파니 리미티드 filed Critical 야마자끼 순페이
Publication of KR880004128A publication Critical patent/KR880004128A/ko
Application granted granted Critical
Publication of KR910003742B1 publication Critical patent/KR910003742B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

내용 없음

Description

CVD장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 공지의 광 CVD 장치 예의 단면도.
제2도는 본 발명의 한 구체예의 단면도.
제3도는 제2도의 Ⅲ-Ⅲ선 단면도.

Claims (27)

  1. 반응실: 적어도 한두개의 기재가 장착되어 있는 기재홀더: 상기 기재홀더에 장착된 기재를 조사하는 상기 반응실에 있는 적어도 하나의 광원: 상기 기재홀더를 회전시키기 위한 구동장치: 공정 가스 도입 장치 및 배기장치로서 구성되는 광증감 CVD 장치.
  2. 제1항에 상기 기재홀더는 다수의 광원으로 둘러싸여 있는 장치.
  3. 제2항에서 상기 광원은 상기 홀더가 회전하는 중심을 중심으로 원 둘레에 배열되어 있는 장치.
  4. 제3항에서 상기 광원은 일정한 각도거리에 의하여 서로 뒤떨어져 위치한 장치.
  5. 제3항에서 상기 기재홀더의 회전축은 상기 원과 직각을 이루는 장치.
  6. 제5항에서 상기 기재홀더가 원통형으로 된 장치.
  7. 제6항에서 상기 기재홀더가 프리즘인 장치.
  8. 제7항에서 상기 기재홀더가 기재가 장착되는 6측면을 가지는 장치.
  9. 제7항에 상기 기재홀더의 측면의 수가 12이상인 장치.
  10. 제6항에서 상기 광원이 상기 원통형 기재홀더의 축방향으로 늘어진 전구(bulb)로 형성된 것인 장치.
  11. 반응실: 적어도 한두개의 기재가 장착되어 있는 기재홀더: 상기 기재홀더에 실려진 기재를 조사하는 상기 반응실내에 장치된 적어도 하나의 광원: 공정 가수 도입수단: 및 배기수단, 상기 광원은 밀봉된 투명관내에 들어있는 것을 특징으로 하는 상기 장치로서 구성되는 광증감 CVD 장치.
  12. 제11항에 있어서 상기 광원은 수은등인 장치-
  13. 제11항에서 상기 투명관을 통하는 냉각기체를 순환시키는 시스템을 더 포함하는 장치.
  14. 제13항에서 상기 냉각기체가 질소가스인 장치.
  15. 제13항에서 상기관은 한쪽끝이 막히고 다른 한쪽 끝은 상기 순환시스템과 연결된 석영관인 장치-
  16. 반응실: 적어도 한두개의 기재가 장착되어 있는 기재홀더: 상기 반응실내에 방출하기 위한 한쌍의 전극, 상기 기재홀더의 회전용 구동장치 공정 가스 도입 수단 및 배기수단으로 구성하는 플라즈마 증강 CVD 장치.
  17. 제16항에서 상기 기재홀더가 상기 전극의 하나에 둘러싸인 장치.
  18. 제17항에서 상기 전극은 원통형 와이어 망으로 된 장치.
  19. 제18항에서 상기 기재홀더 주위에 위치한 광원을 더 포함하는 장치.
  20. 제19항에서 상기 전극의 하나는 상기 반응실과 상기 기재홀더 사이에 배치되어 있는 장치.
  21. 제20항에서 다른 전극은 상기 기재홀더인 장치.
  22. 제19항에서 상기 기재홀더의 측면의 수가 12개 이상인 장치.
  23. 적어도 하나 이상의 기재를 CVD장치의 반응실에 넣고; 상기 기재상에 광증강 CVD법에 의하여 제1필름(막)을 증착하고, 상기 제1필름상에 플라즈마 CVD법에 의해 제2필름을 증착하고, 상기 반응실로부터 상기 기재를 집어내고 상기 반응실 내부에 증착된 불필요한 생성물을 부식법에 의하여 제거한다는 단계로 구성하는 반도체(장치)제조방법.
  24. 제23항에서 상기 광증강 CVD가 다음식 3Si2H6+8NH3→2Si3N4+21H2또는 SiH4+4N2O→SiO2+4N2+2H2O에 의하여 진행되는 것인 방법.
  25. 제23항에서 상기 플라즈마 CVD는 다음식 SiO4(C2H5)4+14 O2→SiO2+8CO2+10H2O 또는 SiO4(C2H5)4+28N2O→SiO2+8CO2+10H2O+28N2에 의하여 진행되는 것인 방법.
  26. 제24항에서 상기 광증강 CVD는 플라즈마 CVD보다 더 높은 온도에서 진행되는 것인 방법.
  27. 제25항에서 상기 플라즈마 CVD는 상기 광증강 CVD보다 높은 온도에서 진행되는 것인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP61-213323~5 1986-09-09
JP21332486A JPS6369976A (ja) 1986-09-09 1986-09-09 光ｃｖｄ装置
JP61213323A JPS6367727A (ja) 1986-09-09 1986-09-09 光照射機構
JP213323 1986-09-09
JP21332586A JPS6369977A (ja) 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置
JP213325 1986-09-09
JP62-141050 1987-05-06
JP62141050A JPS63307279A (ja) 1987-06-05 1987-06-05 光化学反応処理装置
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US6013338A (en) 2000-01-11
US4950624A (en) 1990-08-21
CN1020290C (zh) 1993-04-14
CN87106283A (zh) 1988-03-23
EP0260097A1 (en) 1988-03-16
EP0490883A1 (en) 1992-06-17
DE3782991T2 (de) 1993-04-08
US6520189B1 (en) 2003-02-18
DE3782991D1 (de) 1993-01-21
EP0260097B1 (en) 1992-12-09

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