TWI575106B - 容室密封構件 - Google Patents
容室密封構件 Download PDFInfo
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- TWI575106B TWI575106B TW101142581A TW101142581A TWI575106B TW I575106 B TWI575106 B TW I575106B TW 101142581 A TW101142581 A TW 101142581A TW 101142581 A TW101142581 A TW 101142581A TW I575106 B TWI575106 B TW I575106B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/0015—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor
- B01J8/0035—Periodical feeding or evacuation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
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- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
本申請案主張2011年11月23日申請之美國臨時申請案第61/563,232號之權益,其揭露內容據此以引用方式納入本文中。
本發明係關於用於處理基材之反應容室。
薄膜沈積反應容室通常以單一容室或雙重容室加以製造。在雙重容室配置中,兩個容室可以一個容室垂直位於第二容室上方之方式加以定向。上容室用於處理基材,而下容室用於基材裝載及卸載。經常發生於雙重容室反應器中之一個問題為沈積粒子會塗佈下容室壁且需要更頻繁的容室清潔。
亦可能難以加熱在基材處理工具中所處理之基材。基材加熱之變化可能導致基材內溫度變化。此等基材內溫度變化可能導致基材內的處理非均一性。在一些設置中,展現此等非均一性之基材可能產生有缺陷之裝置。此外,沈積產物可沈積在下處理容室中,從而導致反應容室中之溫度降低且因此增加功率消耗以克服不充分的加熱。另外,沈積產物於容室中之累積可導致需要過早清潔容室及成本增加。
本文件之觀點係關於用於處理基材之反應容室。在一觀點
中,反應容室包括用於處理基材之上區域、用於裝載基材之下區域、可在該反應容室內移動之承載台、位於該承載台之周邊上之第一密封構件、位於該上區域與該下區域之間的第二密封構件,其中該第一密封構件及該第二密封構件彼此選擇性地嚙合以限制該上區域與該下區域之間的連通。
在一實施中,該第一密封構件可以可拆除地位於承載台上。第二密封構件可以可拆除地位於上區域與下區域之間。反應容室可進一步包括介於承載台之周邊與第一密封構件之間的間隙。當反應容室處於處理溫度下時,間隙可縮小。第一密封構件可隨承載台垂直地行進。反應容室可進一步包括在上區域中之噴淋頭,其中第二密封構件固定在該噴淋頭與第一密封構件之間。當承載台處於處理位置時,處理氣體可在第一密封構件與第二密封構件之間行進。
第一密封構件及第二密封構件均可由石英構成。密封構件可在承載台上自定中心。第一密封構件可進一步包括至少一個向上延伸之突出部分。第二密封構件可進一步包括至少一個向下延伸之突出部分。當承載台處於處理位置時,第一密封構件至少一個突出部分及第二密封構件至少一個突出部分可巢套在一起。在第一密封構件與第二密封構件之間可界定一迂曲路徑。第一密封構件之至少一個突出部分及第二密封構件之至少一個突出部分可各自進一步包括三個突出部分。
當承載台處於處理位置時,第二密封構件可為可撓的且第一密封構件可使第二密封構件偏轉。第二密封構件可固定於反應容室之下區域內。第二密封構件可進一步包括複數個凹口。第二密封構件可進一步包括複數個徑向對準狹縫。第二密封構件可進一步包括徑向對準狹縫彼此偏
移定位之兩個第二密封構件。
在另一觀點中,反應容室隔離裝置包括可在反應容室內移動且可位於承載台上之第一密封構件、可位於反應容室內之上區域與下區域之間的第二密封構件,且其中該第一密封構件及該第二密封構件可彼此選擇性地嚙合以限制該上區域與該下區域之間的連通。
在一實施中,第一密封構件可進一步包括至少一個向上延伸之突出部分且第二密封構件可進一步包括至少一個向下延伸之突出部分。當承載台處於處理位置時,第一密封構件至少一個突出部分及第二密封構件至少一個突出部分可巢套在一起。在第一密封構件與第二密封構件之間可界定一迂曲路徑。當承載台處於處理位置時,第二密封構件為可撓的且第一密封構件可使第二密封構件偏轉。
以下在圖式及詳細描述中描述本文呈現之本發明之觀點及實施。除非明確指示,否則說明書及申請專利範圍中之用詞及片語意欲被賦予其對於可適用技術中之一般技藝人士而言為平常、普通及習慣之含義。發明者完全瞭解必要時該等用詞及片語可為其自身之辭典編纂釋義。發明者根據其自身之辭典編纂釋義來明確選擇在說明書及申請專利範圍中僅使用術語之平常及普通含義,除非其另外明確陳述且接著進一步明確闡述彼術語之「特定」定義且說明其如何不同於平常及普通含義。在不存在意圖應用「特定」定義之此等明確陳述情況下,發明者之意圖及意願在於將術語之簡單、平常及普通含義應用於解釋說明書及申請專利範圍。
發明者亦瞭解英文文法之標準教規。因此,若名詞、術語或片語意欲進一步以某一方式表徵、規定或縮小範圍,則此名詞、術語或片
語將明確包括根據英文文法之標準教規之額外形容詞、描述性術語或其他修飾語。如上所述,在不使用此等形容詞、描述性術語或修飾語之情況下,意圖在於此等名詞、術語或片語被賦予其對於可適用技術中之一般技藝人士而言為平常及普通之英語含義。
上述及其他觀點、特徵及優勢將為該項技術中之一般技藝人士根據【發明說明書】及【圖式】以及【申請專利範圍】所顯而易知的。
13‧‧‧線
14‧‧‧線
20‧‧‧反應容室
22‧‧‧上區域
24‧‧‧下區域
26‧‧‧介面板
28‧‧‧承載台
30‧‧‧基材安裝表面
32‧‧‧升降機
34‧‧‧基材
36‧‧‧處理區域
38‧‧‧箭頭
40‧‧‧噴淋頭
42‧‧‧第一密封構件
44‧‧‧第二密封構件
46‧‧‧外表面
48‧‧‧凸耳
50‧‧‧下表面
52‧‧‧下部
54‧‧‧上部
56‧‧‧底表面
58‧‧‧上表面
60‧‧‧內表面
62‧‧‧外表面
64‧‧‧內表面
66‧‧‧外表面
68‧‧‧外安裝環
70‧‧‧底表面
72‧‧‧通道
74‧‧‧凹口
76‧‧‧外突出部分
78‧‧‧內突出部分
80‧‧‧外表面
82‧‧‧內表面
84‧‧‧外表面
86‧‧‧內表面
88‧‧‧通道
90‧‧‧壁
92‧‧‧箭頭/氣體路徑
94‧‧‧間隙
96‧‧‧中間突出部分
98‧‧‧突出部分
100‧‧‧突出部分
102‧‧‧突出部分
104‧‧‧第一密封構件
106‧‧‧第二密封構件
108‧‧‧安裝板
110‧‧‧螺釘
112‧‧‧外周邊
114‧‧‧彈簧密封構件
116‧‧‧內周邊
118‧‧‧凹口
120‧‧‧狹縫
122‧‧‧頂面
124‧‧‧擱板
126‧‧‧間隔部分
128‧‧‧流動控制環
在下文中,本發明之實施例將結合隨附圖式加以描述,其中相同符號表示相同元件,且:圖1示意地展示處於基材裝載位置之包括第一密封構件及第二密封構件的基材處理容室。
圖2示意地展示處於處理位置之具有承載台、第一密封構件及第二密封構件的基材處理容室。
圖3示意地展示承載台及密封構件之一部分之底部透視圖。
圖4示意地展示承載台及密封構件之透視展開圖。
圖5示意地展示圖2中標以圖5之區域之剖視圖。
圖6示意地展示圖2中標以圖5之具有第二實施密封構件之區域的剖視圖。
圖7示意地展示處於基材裝載位置之包括第一密封構件及第二密封構件的基材處理容室。
圖8示意地展示處於處理位置之具有承載台、第一密封構件及第二密封構件的基材處理容室。
圖9示意地展示第三實施第二密封構件之透視圖。
圖10示意地展示圖8中標以圖10之區域之剖視圖。
圖11示意地展示第四實施第二密封構件之透視圖。
圖12示意地展示圖8中標以圖10之具有第四實施第二密封構件之區域的剖視圖,其中第一密封構件與第二密封構件脫離。
圖13示意地展示大體上關於圖12中之線13-13所獲取之剖視圖。
圖14示意地展示大體上關於圖13中之線14-14所獲取之剖視圖。
圖15示意地展示圖8中標以圖10之具有第四實施第二密封構件之區域的剖視圖,其中第一密封構件與第二密封構件嚙合。
本發明觀點及實施可就功能塊組件及各種處理步驟而加以描述。此等功能塊可由任何數目之經組態以執行規定功能且達成各種結果之硬體或軟體組件實現。舉例而言,本發明觀點可採用可實施多種功能之各種感測器、偵測器、流動控制裝置、加熱器及其類似物。此外,本發明觀點及實施可結合任何數目之處理方法加以實踐,且所述設備及系統可採用任何數目之處理方法,且所述設備及系統僅為應用本發明之實例。
圖1及圖2分別示出在裝載/卸載位置及處理位置之反應容室20之視圖。反應容室20可包括上區域22及下區域24,其可由介面板26分隔。一般而言,處理發生在上區域22內而基材裝載及卸載發生在下區域24內。承載台28包括基材安裝表面30且與可垂直移動之升降機32連接以
在基材裝載位置與基材處理位置之間移置承載台。當經定位之承載台28在如圖2中所示的箭頭38之方向上朝上移動時,基材34可位於基材安裝表面30上且可被定位於處理區域36中,其中噴淋頭40界定該處理區域之上表面。如以下將更詳細所論述,第一密封構件42可位於承載台28上且可自承載台28移動,而第二密封構件44可位於上區域22與下區域24之間。具體而言,在不脫離本揭示案精神及範疇之情況下,第二密封構件44可經定位以至少部分安置在介面板26上或可與介面板或反應容室20之任何其他適合部分連接。
現參見圖3及圖4,承載台28分別以第一密封構件42與第二密封構件44附接及拆離來示出。承載台28包括外表面46及向該外表面46外部延伸之凸耳48。凸耳48可大體上位於承載台之下表面50附近且經配置以在其上收納第一密封構件42。第一密封構件42包括下部52及上部54,在一個實施中,該下部大體上在徑向上朝向該上部54內部定位,但可利用任何適合配置。當第一密封構件用於分隔上區域22與下區域24時,下部52可包括經配置以安置在承載台28之凸耳48上之底表面56。上部54可包括上表面58,其藉由形成迂曲路徑之一部分來幫助密封,如以下將更詳細所論述。此外,下部52可包括內表面60及外表面62,而上部54可包括內表面64及外表面66。因此,上部54藉由自下部52向上延伸而充當作為第一密封構件42之一部分的突出部分。
第二密封構件44可包括具有底表面70之外安裝環68,其中該外安裝環68部分地界定通道72。當第二密封構件44用於在上區域22與下區域24之間提供分隔時,底表面70大體上與介面板26接觸。外環68
亦可包括複數個凹口74,其可用於保證與反應容室中之其他組件恆久且一致對準。第二密封構件44亦可包括大體上向下延伸之外突出部分76及內突出部分78。外突出部分76可包括外表面80及內表面82,而內突出部分78可包括外表面84及內表面86。在此配置中,外突出部分76之外表面80進一步在第二密封構件44中界定通道72,而內突出部分78之外表面84及外突出部分76之內表面82至少部分地界定通道88以在承載台28向上行進至處理位置中時收納第一密封構件42之上部54。在一實施中,內突出部分78及外突出部分76可向下延伸超出底表面70,因為底表面位於反應容室內之介面板上。在另一實施中,內突出部分78可向下延伸相較於外突出部分76短的距離。熟習該項技術者將即刻瞭解的是,在不脫離本揭示案精神及範疇之情況下,可對密封構件作出許多變化。
圖5示出當承載台28向上移動至處理位置中時,巢套於第二密封構件44之一部分內的第一密封構件42之放大剖視圖。具體而言,展示第一密封構件42之上部54位於至少部分地在外突出部分76、內突出部分78及壁90之間形成之通道88內。歸因於由第一密封構件及第二密封構件建立之迂曲路徑,由箭頭92指示之氣體路徑通常較不易於將氣體自上區域22內傳送至下區域24。氣體必須行進穿過由第一密封構件42之內表面60及64與承載台28之外表面46之間形成的間隙94所界定之迂曲路徑,穿過上部54位於其中之通道88,且最終進入下區域24中。視處理要求而定,迂曲路徑之寬度及長度可經最佳化以允許在上區域與下區域之間存在可變量之連通,或在上區域與下區域之間不連通。
第一密封構件42與第二密封構件44兩者均可由石英、金紅
石(rutile)、氧化釔(yttria)、氧化鋯(zirconia)、英高鎳(Inconel)、鈦、鈹-銅或任何其他適合材料構成。在一些實施中,視反應容室20內之溫度而定,第一密封構件及第二密封構件之尺寸可增加或減小。舉例而言,當第一密封構件42由石英構成時,當反應容室內之溫度增加時且特定言之當溫度增加接近400℃時,第一密封構件42傾向於膨脹或增大。此外,當第一密封構件42增大時,間隙94可縮小且第一密封構件42在承載台28上提供自定中心功能。
現參見圖6,以剖面展示第一密封構件42及第二密封構件44之另一觀點,其中第一密封構件42與承載台28整體成型。具體而言,除自承載台28向上延伸之突出部分98、100及102之外,中間突出部分96亦包括在第二密封構件44中。在此配置中,第一觀點之凸耳48已用三個突出部分98、100及102替換,該等突出部分巢套在於自第二密封構件44向下延伸之各種突出部分中每一者之間形成的通道88內。在此配置中,氣體路徑92需要沿迂曲路徑行進,穿過其中具有突出部分98、100及102之複數個通道88以進一步限制氣流路徑。因此,當額外突出部分包括在迂曲路徑中時,會在上區域22與下區域24之間獲得甚至更小之氣流連通。由此可見,視由工具或製程所需之氣流限制而定,任何數目之突出部分皆可用於第一密封構件及第二密封構件中。此外,當可為必要時,突出部分之間的距離及其之間的開口間隔可經最佳化。最後,第一密封構件42中之突出部分可成型為單獨可拆除工件之一部分或可與承載台整體成型,而第二密封構件44之突出部分可形成為單獨可拆除工件或可與反應容室20整體成型或當可為適當時,與介面板整體成型。
現參見圖7至圖15,展示容室密封裝置之另一觀點,但其餘組件相同及/或類似。第一密封構件104可以可拆除地位於承載台28之凸耳48上,而第二密封構件106通常位於下區域24內且可拆除地附接於介面板26。具體而言,第二密封構件106可用安裝板108及複數個螺釘110可拆除地固定於介面板26。第二密封構件106可用安裝板固定在下區域24或上區域22中之彈簧密封構件114之外周邊112處。彈簧密封構件114亦可包括內周邊116,當承載台28在與箭頭38相關之方向上移動直至達到處理位置時,該內周邊可由第一密封構件104加以偏轉。
參見圖9及11,展示彈簧密封構件114,其中在彈簧密封構件之外周邊112上具有凹口118。在一個實施中,包括24個凹口且螺釘被用於在各凹口處及在介面板26與安裝板108之間將彈簧密封構件固定於安裝板108。亦如圖11中所見,複數個狹縫120可包括在彈簧密封構件114之內周邊116周圍以在反應容室之上區域與下區域之間提供最小且受控制之轉移速率。在一個實施中,狹縫120可沿內周邊116徑向對準且可包括約100個或任何其他適合數目之狹縫。熟習該項技術者應瞭解的是,可利用任何適合數目之凹口或狹縫,只要彈簧密封構件經適當固定且上區域與下區域之間的氣流速率受控制即可。
圖7、圖8及圖10示出彈簧密封構件114於不偏移位置(圖7)及偏移或偏轉位置(圖8及圖10)之視圖。在偏移或偏轉視圖中,彈簧密封構件114藉由第一密封構件104之頂表面122向上彈性彎曲。具體而言,頂表面122位於擱板124之平坦部分上,該擱板藉由間隔部分126與凸耳48分隔。在此配置中,彈簧密封構件114藉由在頂表面122處接觸而向
上彎曲且進而限制上區域與下區域之間的連通。流動控制環128、彈簧密封構件114、承載台28及間隙94之間的區域可收集某一部分之處理氣體或沖洗氣體,但此可最終藉由真空措施、沖洗或當卸載基材時第一密封構件與第二密封構件之間的斷開而耗散。
現參見圖11至圖15,兩個彈簧密封構件114以一者於另一者之頂部上的方式加以定位,如圖12中詳細所示。具體而言,兩個彈簧密封構件114位於安裝板108與介面板26之間,用螺釘110維持組件之間的關係。圖13及圖14示出兩個彈簧密封構件114之配置,其中各密封構件中之狹縫120彼此偏移對準,以使得上彈簧密封構件上之狹縫120位於下彈簧密封構件中之狹縫120之間。在此配置中,當承載台28處於如關於圖7至圖10所論述之處理位置時,下方區域中之氣流被阻止流入下區域中,狹縫120除外。舉例而言,如圖14所見之兩個彈簧密封構件114之定向可允許氣體在狹縫120處自上區域流經上彈簧密封構件且接著流經下彈簧密封構件中之狹縫120。在此配置中,再次形成迂曲路徑,藉此當製程可能需要時,有限且受控制之量的氣流可在上區域與下區域之間連通。雙重彈簧密封構件配置起與如上所論述之單一彈簧密封構件類似之作用,且當承載台28及第一密封構件104在與箭頭38相關之方向上朝上移動且承載台處於處理位置時,僅限制及/或阻止氣體在上區域與下區域之間流動。一般技藝人士將即刻瞭解在不脫離本揭示案精神及範疇之情況下,視上區域與下區域之間的所要連通而定,可利用任何數目之狹縫120。
在整篇描述中,任何氣流連通已以受控制及/或限制方式自上區域22傳至下區域24。然而,在本揭示案之精神及範疇內的是提供自下
區域至上區域之氣流。舉例而言,下區域內之沖洗、惰性或其他氣流可在大於上區域中氣流壓力之壓力下提供。在此情況下,下區域中之較高壓力將接著允許氣體自下區域流動穿過以上所述及定義之各種迂曲路徑以通入上區域中。此配置可藉由限制上區域中之凹穴及間隙內之共振而適用於減少沖洗次數或減小粒子於下區域中之累積。無論如何,可選擇性地調整各種密封構件氣流連通以控制上區域與下區域之間的氣流量及方向。
在操作中,第一密封構件42或104位於承載台28上且在可適用時可尤其位於凸耳48上。第二密封構件44或106則大體上位於上區域與下區域之間,或接觸上方之介面板26(在第二密封構件44之情況下)或接觸下方之介面板26(在第二密封構件106之情況下)。在第一密封構件及第二密封構件在適當位置下,使承載台28降低至基材位於提升銷上所處之基材裝載位置。接著,在與箭頭38相關之方向上朝上移動承載台直至第一密封構件與第二密封構件形成迂曲路徑。在一些實施中,當承載台處於處理位置時,第一密封構件及第二密封構件彼此接觸,而在其他實施中,在第一密封構件與第二密封構件之間保留小間隙,但大體上併入迂曲路徑中。無論利用哪觀點或實施,當承載台處於處理位置時,上區域與下區域之間的氣流得以控制及/或最小化。在製程完成之後,使承載台下降進入下區域中且可再次建立上區域與下區域之間的正常連通,直至另一基材裝載於承載台上且承載台再次移動至處理位置中。
用於容室密封構件之方法及設備之此等及其他實施例可合併如關於用於上述容室密封構件之設備之實施例所述的概念、實施例及組態。所示及所述特定實施係說明本發明及其最佳模式且不意欲另外以任何
方式限制觀點及實施之範疇。實際上,為簡潔起見,系統之習知製造、連接、製備及其他功能觀點可能未詳細描述。此外,各種圖中所示之連接線意欲表示各種元件之間的示範性功能關係及/或實體結合。許多替代性或額外功能關係或實體連接可存在於實際系統中,及/或可不存在於一些實施例中。
如本文所用,術語「包括(含)」或其任何變化形式意欲代表非排除性包括,以使得包括一系列要素之製程、方法、物品、組合物或設備不僅包括所述彼等要素,而且亦可包括未明確列出或為此製程、方法、物品、組合物或設備所固有之其他要素。除未明確記述之組合及/或修改之外,用於實踐本發明之上述結構、配置、應用、比例、要素、材料或組件之其他組合及/或修改亦可變化或另外針對特定環境、製造規格、設計參數或其他操作要求加以特定改適而不脫離其一般性原則。
應瞭解本文所述之組態及/或方法在本質上為示範性的,且此等特定實施例或實例不應以限制性意義加以考慮,因為可能存在眾多變化形式。本文所述之特定慣例或方法可表示許多處理策略之一或多者。因此,所說明之各種動作可以說明之順序、以其他順序進行,或在一些情況下予以省略。
本揭示案之主題包括本文揭示之各種製程、系統及組態、及其他特徵、功能、動作及/或性質,以及其任何及所有等效物之所有新穎及非明顯之組合及次組合。
20‧‧‧反應容室
22‧‧‧上區域
24‧‧‧下區域
26‧‧‧介面板
28‧‧‧承載台
30‧‧‧基材安裝表面
32‧‧‧升降機
34‧‧‧基材
36‧‧‧處理區域
40‧‧‧噴淋頭
42‧‧‧第一密封構件
44‧‧‧第二密封構件
46‧‧‧外表面
50‧‧‧下表面
Claims (25)
- 一種反應容室,其包括:一用於處理一基材之上區域;一用於裝載一基材之下區域;一介於該上區域與該下區域之間的介面板;一可在該反應容室內移動之承載台;一第一密封構件,當該承載台位於該下區域時,該第一密封構件係位於該承載台之周邊上;一第二密封構件,其具有與該介面板的頂部嚙合的底部,且該第二密封構件係位於該上區域與該下區域之間;其中該第一密封構件及該第二密封構件彼此選擇性地嚙合以限制該上區域與該下區域之間的連通。
- 如申請專利範圍第1項之反應容室,其中該第一密封構件係可拆除地位於該承載台上。
- 如申請專利範圍第1項之反應容室,其中該第二密封構件係可拆除地位於該上區域與該下區域之間。
- 如申請專利範圍第1項之反應容室,其進一步包括一介於該承載台之周邊與該第一密封構件之間的間隙。
- 如申請專利範圍第4項之反應容室,其中當該反應容室處於處理溫度下時,該間隙縮小。
- 如申請專利範圍第1項之反應容室,其中該第一密封構件隨該承載台垂直地行進。
- 如申請專利範圍第1項之反應容室,其進一步包括在該上區域中之一噴淋頭,其中該第二密封構件固定在該噴淋頭與該第一密封構件之間。
- 如申請專利範圍第1項之反應容室,其中當該承載台處於一處理位置時,一處理氣體在該第一密封構件與該第二密封構件之間行進。
- 如申請專利範圍第1項之反應容室,其中該第一密封構件及該第二密封構件均由石英構成。
- 如申請專利範圍第1項之反應容室,其中該密封構件在該承載台上自定中心。
- 如申請專利範圍第1項之反應容室,其中該第一密封構件進一步包括至少一個向上延伸之突出部分。
- 如申請專利範圍第11項之反應容室,其中該第二密封構件進一步包括至少一個向下延伸之突出部分。
- 如申請專利範圍第12項之反應容室,其中當該承載台處於一處理位置時,該第一密封構件至少一個突出部分及該第二密封構件至少一個突出部分巢套在一起。
- 如申請專利範圍第13項之反應容室,其中在該第一密封構件與該第二密封構件之間界定一迂曲路徑。
- 如申請專利範圍第12項之反應容室,其中該第一密封構件至少一個突出部分及該第二密封構件至少一個突出部分的其中之一或兩者進一步包括三個突出部分。
- 如申請專利範圍第1項之反應容室,其中當該承載台處於一處理位置時,該第二密封構件為可撓的且該第一密封構件使該第二密封構件偏轉。
- 如申請專利範圍第16項之反應容室,其中該第二密封構件固定於該反應容室之該下區域內。
- 如申請專利範圍第16項之反應容室,其中該第二密封構件進一步包括複數個凹口。
- 如申請專利範圍第16項之反應容室,其中該第二密封構件進一步包括複數個徑向對準狹縫。
- 如申請專利範圍第19項之反應容室,其中該第二密封構件進一步包括徑向對準狹縫彼此偏移定位之兩個第二密封構件。
- 一種反應容室隔離裝置,其包括:一第一密封構件,其可在一反應容室內移動且可拆除地位於一承載台上;一第二密封構件,其可位於該反應容室內之介於一上區域與一下區域之間的一介面板上;且其中該第一密封構件及該第二密封構件可彼此選擇性地嚙合以形成具有一間隙的迂曲路徑,該間隙係介於該第一密封構件的內表面與該承載台的外表面之間,進而限制該上區域與該下區域之間的連通。
- 如申請專利範圍第21項之反應容室隔離裝置,其中該第一密封構件進一步包括至少一個向上延伸之突出部分且該第二密封構件進一步包括至少一個向下延伸之突出部分。
- 如申請專利範圍第22項之反應容室隔離裝置,其中當該承載台處於處理位置時,該第一密封構件至少一個突出部分及該第二密封構件至少一個突出部分巢套在一起。
- 如申請專利範圍第23項之反應容室隔離裝置,其中該第二密封構件進一步包括複數個徑向對準狹縫。
- 如申請專利範圍第21項之反應容室隔離裝置,其中當該承載台處於一處理位置時,該第二密封構件為可撓的且該第一密封構件使該第二密封構件偏轉。
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KR101904855B1 (ko) | 2018-10-08 |
KR20140091766A (ko) | 2014-07-22 |
WO2013078065A8 (en) | 2014-04-03 |
KR101860924B1 (ko) | 2018-05-24 |
TW201341585A (zh) | 2013-10-16 |
WO2013078065A1 (en) | 2013-05-30 |
KR20180056792A (ko) | 2018-05-29 |
US20130129577A1 (en) | 2013-05-23 |
CN104081512A (zh) | 2014-10-01 |
DE112012004880T5 (de) | 2014-08-28 |
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US9340874B2 (en) | 2016-05-17 |
CN104081512B (zh) | 2016-07-27 |
US9005539B2 (en) | 2015-04-14 |
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