JP6697640B2 - 可動構造をもつ堆積またはクリーニング装置および動作方法 - Google Patents
可動構造をもつ堆積またはクリーニング装置および動作方法 Download PDFInfo
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- 238000011068 loading method Methods 0.000 claims description 37
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Description
外側チャンバと、
二重チャンバ構造を形成する外側チャンバ内部の反応チャンバとを備え、反応チャンバは外側チャンバ内部において処理位置と下降位置との間で移動するように構成され、下降位置は、1つ以上の基板を反応チャンバ中へロードするためである。
1つ以上の基板を外側チャンバの側面を通して反応チャンバ中へロードするためのローディングポートを外側チャンバの側面に備える。ある例示的実施形態において、ローディングポートは、ロードロックである。ある例示的実施形態において、ローディングポートは、ゲートバルブまたはハッチである。
反応チャンバの垂直移動を許容するように構成された移動要素を備える。ある例示的実施形態において、移動要素は、反応チャンバへ接続される。移動要素は、フレクシャ構造であってよい。移動要素は、気密構造であってよい。
外側チャンバ内部ではあるが反応チャンバの外部にヒータを備える。
堆積またはクリーニング反応器の反応チャンバに処理位置および下降位置を設けることと、
反応チャンバを処理位置と下降位置との間で移動させることとを含む方法が提供され、下降位置は、1つ以上の基板を反応チャンバ中へロードするためである。
反応チャンバの下方への移動によって反応チャンバ中へのローディング開口部を形成することを含む。
反応チャンバの下方への移動の際に反応チャンバを上側静止部分から分離させることを含む。
1つ以上の基板を反応チャンバを囲む外側チャンバの側面を通して反応チャンバ中へロードすることを含む。
反応チャンバを、真空ベローズのような、気密フレクシャ要素によって移動させることを含む。
反応チャンバを堆積またはクリーニング反応器の排出ライン中に置かれた要素によって移動させることを含む。
Claims (16)
- 堆積またはクリーニング装置であって、
外側チャンバと、
二重チャンバ構造を形成する前記外側チャンバ内部の反応チャンバと、
前記反応チャンバの垂直移動を許容するように構成された移動要素と、
を備え、
前記反応チャンバは前記外側チャンバ内部において処理位置と下降位置との間で移動するように構成され、前記下降位置は1つ以上の基板を前記反応チャンバ中へロードするための位置であり、
前記移動要素は、前記装置の排出ラインの一部を形成する、
堆積またはクリーニング装置。 - 前記装置は、前記反応チャンバの下方への移動によって前記反応チャンバ中へのローディング開口部を形成するように構成される、請求項1に記載の装置。
- 前記反応チャンバは、ローディングのための経路を開くために、前記反応チャンバの下方への移動の際に上側静止部分から分離するように構成される、請求項1または2に記載の装置。
- 前記1つ以上の基板を前記外側チャンバの側面を通して前記反応チャンバ中へロードするためのローディングポートを前記外側チャンバの前記側面に備える、請求項1から3のいずれか1項に記載の装置。
- 前記移動要素は、真空ベローズである、請求項1に記載の装置。
- 前記外側チャンバの内部ではあるが前記反応チャンバの外部にヒータを備える、請求項1から5のいずれか1項に記載の装置。
- 前記反応チャンバと外側チャンバ壁との間に形成された中間スペース中へ向かう、前記外側チャンバ中への不活性ガス送り込み部と、
前記中間スペースからの前記不活性ガスの出口と、
を備える、請求項1から6のいずれか1項に記載の装置。 - 原子層堆積(ALD)装置、または化学気相堆積(CVD)装置である、請求項1から7のいずれか1項に記載の装置。
- 堆積またはクリーニング反応器の反応チャンバに処理位置および下降位置を設けることと、
前記反応チャンバを前記処理位置と前記下降位置との間で移動させることと、
前記反応チャンバを前記堆積またはクリーニング反応器の排出ライン中に置かれた要素によって移動させることと、
を含む方法であって、前記下降位置は、1つ以上の基板を前記反応チャンバへロードするためである、方法。 - 前記反応チャンバの下方への移動によって前記反応チャンバ中へのローディング開口部を形成することを含む、請求項9に記載の方法。
- 前記反応チャンバの下方への移動の際に前記反応チャンバを上側静止部分から分離させることを含む、請求項9または10に記載の方法。
- 前記1つ以上の基板を前記反応チャンバを囲む外側チャンバの側面を通して前記反応チャンバ中へロードすることを含む、請求項9〜11のいずれか1項に記載の方法。
- 前記反応チャンバを、真空ベローズのような、気密フレクシャ要素によって移動させることを含む、請求項9〜12のいずれか1項に記載の方法。
- 前記反応チャンバと外側チャンバ壁との間に形成された中間スペースに反応チャンバ圧力と比較してより大きい圧力を供給することを含む、請求項9〜13のいずれか1項に記載の方法。
- 前記反応チャンバ内で前記1つ以上の基板上に原子層堆積(ALD)方法を実行することを含む、請求項9〜14のいずれか1項に記載の方法。
- 請求項9〜15のいずれか1項に記載の方法を実装するための手段を備える、堆積またはクリーニング反応器。
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