TWI806848B - 具有可移式結構之沉積或清潔裝置及操作方法 - Google Patents
具有可移式結構之沉積或清潔裝置及操作方法 Download PDFInfo
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Abstract
一種沉積或清潔裝置包含一外真空腔室及在該外腔室內側而形成一雙腔室結構之一反應腔室。該反應腔室係組配來在該外真空腔室內側之一處理位置與一下降位置間移動,該下降位置係用以將一或多數基材載入該反應腔室。
Description
本發明大致有關於沉積或清潔裝置及其操作方法。更特別地,但非唯一地,本發明有關於具有可移式結構之基材處理反應器。
這部份顯示有用之背景資訊,但非承認在此所述之任何技術代表最新技術。
在習知沉積或清潔程序中,例如晶圓之基材在真空群集結構內移動。這些結構應在該等基材上產生最少顆粒或最好沒有增加顆粒。在該基材上方之任何機械或移動部件係會影響沉積品質之一可能顆粒源。對某些應用及尺寸而言,在習知技術中之移動部件不再可以提供一可接受之解決方案。
US 9,095,869 B2揭露一沉積反應器結構,其包含在一電漿源與一反應腔室間之一基材傳送腔室。該傳送腔室包含用於在該反應腔室之頂側產生化學反應的一移動送入部件。該送入部件可垂直地變形且具有一收縮形狀及一伸長形狀。該收縮形狀容許基材透過藉由收縮該送入部件形成之一路徑載入該反應腔室中。
本發明之實施例的一目的係對裝載及卸載基材提供一改良方法及裝置,並減少或避免由於顆粒產生造成之問題。
依據本發明之一第一態樣例,提供一種沉積或清潔裝置,其包含: 一外腔室; 一反應腔室,其在該外腔室內側而形成一雙腔室,其中該反應腔室係組配來在該外腔室內側之一處理位置與一下降位置間移動,該下降位置係用以將一或多數基材載入該反應腔室。
與該反應腔室固定而其他結構移動之習知技術不同,本發明之實施例提供該反應腔室本身之移動。該反應腔室可朝垂直方向移動,或至少部份地朝一垂直方向移動。可移動之反應腔室亦包括可移動之反應腔室的一側壁。在某些實施例中,該可移式反應腔室係一單體結構。在某些實施例中,該反應腔室形成一集成整體。在某些實施例中,該反應腔室之移動係自(該反應腔室之)下方致動。
在某些實施例中,該反應腔室之移動部件係設置在該基材之下方(即,非上方)。在某些實施例中,該反應腔室整體係組配成可移動。在某些實施例中,該反應腔室之側壁係組配成與該反應腔室之其他部份一起移動。在某些實施例中,一反應腔室底部與反應腔室側壁間之距離在移動時為恆定。在某些實施例中,該外腔室未移動,即該外腔室固定。
該處理位置可為一沉積位置及/或一清潔位置。
在某些實施例中,該裝置係組配成藉由該反應腔室之向下移動而形成一裝載口到該反應腔室中。
在某些實施例中,該反應腔室係組配成在該反應腔室向下移動時自一上固定部件(即,在該移動反應腔室上方之一固定部件)分離,以便開啟用以裝載之一路徑。在某些實施例中,該上固定部件係提供饋入該反應腔室之流體的一部件。
在該可移式反應腔室之頂部的部件(即,該裝置之上固定部件)可為一開口或封閉部件。它可為一寬管,例如,從一自由基源延伸之一自由基饋入部件。或者,它可為例如選擇地包含用於向下流體分配之一擴大體積的一蓋狀部件。
在某些實施例中,該反應腔室形成具有一旋轉對稱性之一本體。該反應腔室可為一碗狀部件(在其底部具有一排出口)。
在某些實施例中,該裝置包含: 一裝載埠,其在該外腔室之側用以將該一或多數基材通過該外腔室之側載入該反應腔室。在某些實施例中,該裝載埠係一裝載鎖。在某些實施例中,該裝載埠係一閘閥或一艙口。
在某些實施例中,該裝置包含: 一移動元件,其組配成容許該反應腔室垂直地移動。在某些實施例中,該移動元件與該反應腔室連接。該移動元件可為一撓曲結構。該移動元件可為一氣密結構。
在某些實施例中,該移動元件形成該裝置之一排出線的一部份。該排出線可為一前線。在某些實施例中,該反應腔室包含在該反應腔室之底部中開口的一排出線。在某些實施例中,該反應腔室包含在該反應腔室之底部中心對稱地開口的一排出線。在某些實施例中,該移動元件係對稱地放置在該反應腔室之底部。在某些實施例中,當朝一側向看時,該移動元件係放置在該反應腔室之底部下方的中心。
在某些實施例中,該移動元件係其長度可調整之一管狀長形結構。因此,在某些實施例中,該移動元件係一中空可變形元件。在某些實施例中,它容許流體在一垂直方向上通過它,但具有氣密側壁。
在某些實施例中,該移動元件係一伸縮管。在某些實施例中,該移動元件係一真空伸縮管。在某些實施例中,該移動元件(真空伸縮管或類似物)完全為真空。
在某些實施例中,該移動元件係藉由可互相垂直地移動之二個(或二個以上)交錯或套疊管來實施。
在某些實施例中,該裝置包含致動該反應腔室之垂直移動的一致動元件。該致動可藉由施力在該反應腔室上,使得該反應腔室在該移動元件容許時移動而發生。該致動元件之放置取決於實施方式。在某些實施例中,該致動元件係設置在該外腔室外側。在某些實施例中,該致動元件係設置在該外腔室內,但在該反應腔室外側。在某些實施例中,該致動元件係設置在該排出線內。在某些實施例中,省略該致動元件。在該實施例中,該移動元件因此可在不需一外部致動器(「外部」在此表示在該移動元件之外)之情形下使該反應腔室移動。該移動可由於例如輻射或溫度之改變來實現。在一實施例中,該移動元件由形狀記憶合金(智慧金屬)形成,因此該移動元件本身係一致動器。
在某些實施例中,該裝置包含一基材支架。該基材支架可支持該基材,例如,一晶圓呈一水平方位。在某些實施例中,該基材係一450 mm直徑之晶圓。在其他實施例中,該基材係其直徑小於450 mm,例如300 mm之一晶圓。一沉積或清潔程序可在(多數)水平定向之基材上實施。或者,該基材方位為垂直。該基材支架可支持一垂直定向之基材或多數垂直定向之基材。依據實施方式,該等基材可在載入它們時水平地或垂直地定向。該等基材可一次一個地或批次地載入。
在某些實施例中,該基材支架附接在該排出線上。在某些實施例中,該基材支架可整合或整合在蓋之反應腔室頂部。該基材支架可例如垂直地移動。它可被加熱及/或可另外電氣地調整。在某些實施例中,該裝置在沒有一基材支架之情形下實施。在該實施例中,該基材可被(多數)反應腔室壁及/或被一選擇性之保護元件之一上緣支持,該保護元件放在該排出線內且組配成防止材料在處理時沉積在該移動元件上。
在某些實施例中,該裝置包含: 一加熱器,其設置在該外腔室內側,但在該反應腔室外側。
在某些實施例中,該裝置包含惰性氣體饋入部,其進入該外腔室且進入形成在該等反應腔室與外腔室壁間之一中間空間;以及該惰性氣體自該中間空間送出之出口。該中間空間在此係在該外腔室內且包圍該反應腔室之體積。該外腔室可由一壓力容器形成。由於在其中產生之真空情況,該外腔室可稱為一真空腔室。在某些實施例中,當裝載該等基材時(及在處理,即沉積及/或清潔時),該反應腔室及外腔室都是真空。在某些實施例中,該外腔室及該反應腔室包含分開壁,即,它們沒有共用壁,且該外腔室事實上收納該反應腔室(被該中間空間分開)。
在某些實施例中,該移動元件之一內表面面對一排出線壓力。在某些實施例中,該移動元件之一外表面面對比在該排出線內之壓力高的一壓力。在某些實施例中,該較高壓力可為在該中間空間內之一壓力、或一環境壓力。
在某些實施例中,在該反應腔室內之氣體流動方向係由上至下。饋入該反應腔室中之氣體或流體宜來自該反應腔室之頂側,且從該反應腔室之一下部(在該基材下方)的出口,例如通過該反應腔室之底部或底部件,而進入該排出線。
在某些實施例中,在該反應腔室內之氣體流動方向完全地或部份地在一水平定向基材之上方從一側至另一側。饋入該反應腔室之氣體或流體在這實施例中係由該基材之一側或偏心配置。
在某些實施例中,該可移式反應腔室封閉一反應空間(在該反應空間中意圖發生所需沉積或清潔反應)。
在某些實施例中,該裝置係一原子層沉積(ALD)裝置。在這上下文中,該用語ALD包含ALD子型,例如分子層沉積(MLD)、例如電漿加強原子層沉積(PEALD)之電漿輔助ALD、及光加強原子層沉積(亦稱為閃光加強ALD)。在其他實施例中,該裝置係一化學氣相沉積(CVD)裝置。在另外之實施例中,該裝置係一電漿輔助清潔裝置。
在某些實施例中,如在US 9,095,869 B2中地,該裝置包含可配置一反應腔室送入部件之在該(等)基材上方的一可變形部件。該可變形部件可藉由一伸縮管或藉由多數交錯管來實施作為可變形組件。
在某些實施例中,在該反應腔室及外腔室(如果有的話)內之壓力都低於環境壓力或大氣壓力,因此該裝置係組配成在該減壓環境中處理基材。
依據本發明之一第二態樣例,提供一方法,其包含以下步驟: 提供具有一處理位置及一下降位置的一沉積或清潔反應器之一反應腔室;及 使該反應腔室在該處理位置與該下降位置之間移動,該下降位置係用以將一或多數基材載入該反應腔室。
在某些實施例中,該方法包含以下步驟: 藉由該反應腔室之向下移動而形成一裝載口到該反應腔室中。
在某些實施例中,該反應腔室包含一反應腔室本體或一反應容器、或由該反應腔室本體或反應容器形成。在某些實施例中,該方法包含使該反應腔室本體或反應容器全體移動。
在某些實施例中,該方法包含以下步驟: 在該反應腔室向下移動時,使該反應腔室自一上固定部件分離。
在某些實施例中,該方法包含以下步驟: 將該一或多數基材通過包圍該反應腔室之一外腔室的一側載入該反應腔室。
在某些實施例中,該方法包含以下步驟: 藉由例如一真空伸縮管之一氣密撓曲元件移動該反應腔室。
在某些實施例中,該方法包含以下步驟: 藉由設置在該沉積或清潔反應器之一排出線中的一元件移動該反應腔室。
在某些實施例中,該方法包含以下步驟:對形成在該反應腔室與外腔室壁間之一中間空間提供比反應腔室壓力大之一壓力。
在某些實施例中,該方法係在一沉積或清潔反應器中實施,且該沉積或清潔反應器具有一外腔室及在該外腔室內側之一反應腔室。
在某些實施例中,該方法包含以下步驟:在該反應腔室內之該一或多數基材上實施一原子層沉積(ALD)方法。在某些其他實施例中,該方法包含以下步驟:在該反應腔室內之該一或多數基材上實施一化學氣相沉積(CVD)方法。在某些實施例中,該方法包含以下步驟:在該反應腔室內實行例如一電漿輔助清潔程序之一清潔程序。
依據本發明之一第三態樣例,提供一種沉積或清潔反應器(基材處理反應器或裝置),其包含用以實施該第二態樣之方法或該第二態樣之任一實施例的裝置。
以上已說明本發明之不同非限制態樣例及實施例。上述實施例只是用以說明可用以實施本發明之選擇態樣或步驟。某些實施例可只參照本發明之某些態樣例提出。應了解的是對應實施例亦可應用於其他態樣例。可形成該等實施例之任何適當組合。
在以下說明中,使用原子層沉積(ALD)技術作為一例子。但是,本發明不限於ALD技術,且它可使用在多種沉積裝置中,例如,在化學氣相沉積(CVD)反應器中及在清潔反應器中。
所屬技術領域中具有通常知識者熟知一ALD成長機構之基礎。ALD係以將至少二反應前驅物種依序導入至少一基材為基礎的一特殊化學沉積方法。但是,應了解的是當使用光加強ALD或電漿輔助ALD,例如PEALD而產生單一前驅物ALD程序時,這些反應性前驅物中之一反應性前驅物可用能量取代。藉由ALD成長之薄膜緻密、無針孔且具有均一厚度。
該至少一基材通常在一反應容器中暴露於暫時分開之前驅物脈衝,以便藉由依序自飽和之表面反應來沉積材料在該等基材表面上。在這申請案之上下文中,該用語ALD包含所有可使用之以ALD為基礎的技術及任何相當或密切相關之技術,例如以下ALD子型:分子層沉積(MLD)、例如電漿加強原子層沉積(PEALD)之電漿輔助ALD、及光加強原子層沉積(亦稱為閃光加強ALD)。
一基本ALD沉積周期由四連續步驟構成:脈衝A、沖洗A、脈衝B及沖洗B。脈衝A由一第一前驅物蒸氣構成,而脈衝B由另一前驅物蒸氣構成。惰性氣體及一真空泵通常用於在沖洗A及沖洗B時沖洗氣體反應副產物及來自該反應空間之殘留反應物分子。一沉積程序包含至少一沉積周期。沉積周期重複直到該沉積程序已產生一所需預定厚度之薄膜或塗層。沉積周期亦可更簡單或更複雜。例如,該等周期可包括被沖洗步驟分開之三個或三個以上反應物蒸氣脈衝,或可省略某些沖洗步驟。全部這些沉積周期形成藉由一邏輯單元或一微處理器控制之一定時沉積程序。
圖1與2顯示依據一實施例之一沉積或清潔裝置的示意側視圖。該裝置包含界定一外腔室110之一外腔室壁。該裝置更包含在該外腔室110內側之一反應腔室120,因此形成一雙腔室結構。形成在該外腔室壁與該反應腔室120間之空間(即,由該外腔室110界定且包圍該反應腔室120之空間)係定義為一中間空間111,而在該反應腔室120內之空間定義為一反應空間112,如圖2所示。
該反應腔室120係組配來在該外腔室110內側之一沉積或清潔位置(圖2)與一下降位置(圖1)間移動。該下降位置係用以將一或多數基材105載入該反應腔室。該沉積或清潔位置係用以依據該選擇沉積或清潔方法,例如,ALD或CVD處理該一或多數基材105。
該裝置包含在該外腔室110之側的一載入埠115,用以將該一或多數基材105通過該外腔室110之側載入該反應腔室120。所示裝載埠115顯示一裝載鎖115,但在其他實施例中該裝載鎖115可省略,且被如一艙口或類似物之一更簡單結構取代。在某些實施例中,該裝載埠115可為相對於環境條件或相對於其他設備之一閘閥或一裝載鎖。
該裝置包含與該反應腔室120連接之一移動元件140。該移動元件140容許該反應腔室120在該沉積或清潔位置與該下降位置間垂直地移動。該移動元件140可為一撓曲結構。它可為其長度可調整之一管狀長形結構。該移動元件140可為一可變形組件。圖1與2所示之移動元件140係一伸縮管,特別是一真空伸縮管,因此容許流體朝一垂直方向通過,但具有氣密側壁。該移動元件140可形成在該反應腔室120下方之一排出線150的一部份,如圖1與2所示。該移動元件140係全體真空地設置在該外腔室110壁內。
該反應腔室120之真正移動可被一致動器(致動元件)或被該移動元件140本身驅動。在圖1與2中之實施例顯示設置在該外腔室110外側之一致動器145。該致動器145施力在該反應腔室120上,使得該反應腔室在該移動元件140容許時移動。圖1與2所示之致動器145包含一力傳送構件,例如一軸或桿,該力傳送構件延伸穿過一外腔室饋通進入該外腔室110與該反應腔室120間之中間空間。該力傳送構件更接觸該反應腔室120,使該反應腔室120在該移動元件140容許時移動。該移動元件140具有如圖1所示之一收縮形狀及如圖2所示之一伸長形狀,且它容許該反應腔室120在由這些形狀界定之位置間垂直移動。
在其他實施例中,該致動元件之形式及操作可與圖1與2所示者不同。該致動元件之放置取決於實施方式。該致動元件係設置在該外腔室外側。在某些實施例中,該致動元件係設置在該外腔室內,但在該反應腔室外側。在某些實施例中,該致動元件係設置在該排出線150內。依據實施方式,該沉積或清潔裝置可包含多數致動元件。
在某些實施例中,完全省略該致動元件。在該實施例中,該移動元件140因此在不需要一外部致動器(「外部」在此表示在該移動元件之外)之情形下使該反應腔室移動。該移動可由於例如輻射或溫度之改變來實現。圖3顯示該移動元件140由形狀記憶合金(智慧金屬)形成之另一實施例。在該實施例中,該移動元件140本身實際上係使該反應腔室120在垂直位置間移動之一種致動器。
該裝置係組配成藉由該反應腔室120之向下移動而形成一裝載口進入該反應腔室120。因此,在某些實施例中,該反應腔室120係組配成在該反應腔室120向下移動時自一上固定部件分離,以便開啟用以裝載之一路徑。在某些實施例中,該上固定部件係提供送入該反應腔室120之流體的一部件。
在該可移式反應腔室之頂部的部件(即,該裝置之上固定部件)可為一開口或封閉部件。
圖1與2所示之實施例顯示由一自由基源(未圖示)延伸之一自由基饋入管160。當該反應腔室120下降時,該自由基饋入管保持固定。該裝載口形成在該反應腔室120側壁與該自由基饋入管160之間(圖1)。
圖1與2所示之實施例更顯示可為例如用於惰性氣體或用於一熱ALD之前驅物的一饋入線125。該饋入線125由一來源(未圖示)透過一外腔室饋通進入該中間空間。它進一步延伸進入該可移式反應腔室120頂部上的一固定凸緣或軸環161中之一出口(以便提供惰性/前驅物氣體或流體在該點進入該反應腔室120之入口)。當該反應腔室120下降時,該部件161保持固定。依據實施方式,該沉積或清潔反應器可包含多條饋入線125。在其他實施例中,例如在某些清潔實施例中,可省略它們。
圖4所示之另一實施例顯示一封閉上固定部件例。它可為例如選擇地包含用於向下流體分配之一擴大體積475的一蓋狀部件470。
該裝置包含一基材支架130,該基材支架130組配成可收納透過該裝載埠115裝載之一或多數基材105。在某些實施例中,該基材支架130附接在該排出線150上。在某些其他實施例中,如圖4所示者,一基材支架430可整合或整合在蓋470之反應腔室頂部。該基材支架可在該反應腔室120內,例如,垂直地移動。
在此所述之裝置亦包含在該外腔室110內但在該反應腔室120外側的一加熱器155,但在某些實施例中可省略該加熱器。
在某些實施例中,該裝置包含惰性氣體饋入部,其進入該外腔室110且進入形成在該等反應腔室120與外腔室110之壁間之中間空間;以及該惰性氣體自該中間空間送出之出口(該中間空間在此係在該外腔室內且包圍該反應腔室之體積)。圖5顯示該實施例。惰性氣體透過一外腔室饋通部581饋入,且透過饋通部582抽泵出至該排出線150。該出口可在相對於該移動元件140之上游或下游。在另一實施例中,該出口係連至一分開抽泵線。在又一實施例中,該出口在移動反應腔室120接觸該上固定部件處進入該反應腔室120。當該反應腔室120在該沉積或清潔位置時形成在該可移式反應腔室120與該固定部件間的接觸可為一金屬與金屬接觸。
在某些實施例中,在該反應腔室120內之氣體流動方向係由上至下。饋入該反應腔室120中之氣體或流體宜來自該反應腔室120之頂側,且從該反應腔室之一下部(在該基材下方)的出口,例如通過該反應腔室120之底部或底部件,而進入該排出線150。在該排出線150之末端的是將該反應腔室120之內部抽泵成真空的一真空泵(未圖示)。
在某些實施例中,該反應腔室120形成具有一旋轉對稱性之一本體。該反應腔室120可為一碗狀部件(在其底部具有一排出口)。該外腔室110可由一壓力容器形成。由於在其中產生之真空情況,該外腔室110可稱為一真空腔室。在某些實施例中,當裝載該等基材時(及在處理時),該反應腔室120及外腔室110都是真空。該等外腔室110之壁形成一邊界線。特別使用於該反應腔室120內部之在該真空腔室壁內的體積被一真空泵(未圖示)抽泵成真空,藉此使真空情況在由該等真空腔室壁界定之體積內占優勢。
在某些實施例中,在處理時在該中間空間111中之壓力低於大氣壓力。在某些實施例中,在該中間空間中之壓力係等於或小於0.9巴,且宜為15至5毫巴,而在該反應空間112中之壓力則宜為1.5至0.1毫巴。在該中間空間111中之壓力宜為在該反應空間112中之壓力的至少兩倍。在某些實施例中,在該中間空間111中之壓力宜為在該反應空間112中之壓力的5至10倍。在某些其他實施例中,例如當使用微波電漿時,在該反應空間112中之壓力可為1Pa且在該中間空間中之壓力為4至5Pa。可使用一渦輪分子泵來獲得高度真空。
當該反應腔室120開啟(下降)用以卸載時,該反應腔室120之壓力在這實施例中上升至相較於在該中間空間111中之壓力為相同或高的一讀數,以便將可能之顆粒推離該基材。
在某些實施例中,使用另一移動元件。圖6所示之移動元件640係藉由可互相垂直地移動之二個(或二個以上)交錯或套疊管來實施。該實施例亦可包含類似元件且類似前述實施例地操作。
圖7顯示一選擇性之保護元件791,該保護元件791係放置在該排出線150內,且組配成防止材料在處理時沉積在該移動元件140上。該保護元件791可呈一管形式,且它可沿著該移動元件140之全長延伸,且甚至更長。它可固定在排出線150上或在該外腔室110之一邊緣上。惰性氣體在一實施例中從該中間空間111通過接近該空間之一下終點(dead lower end)的饋通部582,而饋入形成在該保護元件791與該移動元件140間之空間。該惰性氣體沿著形成之氣密空間向上流動至該保護元件791終止處。該流動在此轉變成向下方向且與排氣線流混合。因此,可防止反應氣體進入該保護元件791與該移動元件140間之空間。在省略該基材支架130之實施例中,該(等)基材可被該保護元件791之一上緣支持。
在另一實施例中,有包圍該所述(第一)移動元件140之一第二移動元件(如一第二伸縮管之另一管狀元件)。一封閉空間形成在該等二移動元件之間,且所形成的空間依需要用氣體或流體加壓,以便由於施加壓力之變化而獲得在該等移動元件中之變形,藉此依需要使該反應腔室120垂直移動。該第二移動元件可例如在其一端緊密嵌合在該反應腔室120之外壁上,且在其另一端緊密嵌合在該外腔室110上。此種配置係如一氣動致動器地操作。
在又一實施例中,省略該外腔室110。該反應腔室120形成一單一腔室反應器之一部份。一裝載口藉由使該反應腔室120全體下降來形成。
圖8顯示依據本發明之一方法。在步驟801中,使該反應腔室下降。在步驟802中,裝載該一或多數基材。在步驟803中,使該反應腔室上升進入該沉積或清潔位置,以便在步驟804中藉由一選擇沉積或清潔方法產生該沉積及/或清潔。在處理後,在步驟805中使該反應腔室再下降,且在步驟806中卸載該一或多數基材。在更一般實施例中,可省略該等步驟802至806中之一或多數步驟。在另一實施例中,例如,在一粉末塗裝實施例中,該粉末可沿著另一通道載入且沿相同或不同通道卸載。在該實施例中,可不需要使該反應腔室下降用以載入,而是該反應腔室的下降可只用於達成維修之目的。
關於任何特定前述實施例之說明可直接應用於其他揭露實施例。這適用於該揭露裝置之結構及操作。
在不限制本專利申請專利範圍之範疇及判讀的情形下,在此揭露之一或多數實施例的某些技術效果列舉如下。一技術效果係藉由將該反應腔室之移動部件放在該基材下方來減少在例如一沉積或清潔裝置之一基材處理裝置中在該基材上方形成顆粒。另一技術效果係當該基材下方之流動方向更遠離該基材(即,向下)時,防止來自該基材下方之顆粒進入該基材上方之空間。另一技術效果係改良一基材處理反應器中,特別是一雙腔室基材處理反應器中之裝載方法。另一技術效果係相較於最新技術增加之壓力差,該增加之壓力差可藉由使用可撓伸縮管,即一可變形組件來獲得。
應注意的是某些前述功能或方法步驟可用一不同順序及/或同時地實行。此外,一或多數上述功能或方法步驟可任選且可組合。
前述說明已透過本發明之特定實施方式及實施例之非限制例提供本發明人目前預期之用以實施本發明的最佳模式的完整及資訊說明。但是所屬技術領域中具有通常知識者可了解的是本發明不受限於上述實施例之細節,而是本發明可在不偏離本發明之特性的情形下,使用等效裝置在其他實施例中實施。
此外,本發明之上述實施例的某些特徵可在未對應地使用其他特徵之情形下用來獲得好處。因此,前述說明應被視為只是本發明原理之說明而不是其限制。因此,本發明之範疇只受限於附加之申請專利範圍。
105‧‧‧基材110‧‧‧外腔室111‧‧‧中間空間112‧‧‧反應空間115‧‧‧裝載埠;裝載鎖120‧‧‧(可移式)反應腔室125‧‧‧饋入線130,430‧‧‧基材支架140,640‧‧‧移動元件145‧‧‧致動器150‧‧‧排出線155‧‧‧加熱器160‧‧‧自由基饋入管161‧‧‧固定凸緣或軸環470‧‧‧蓋(狀部件)475‧‧‧擴大體積581‧‧‧外腔室饋通部582‧‧‧饋通部791‧‧‧保護元件801,802,803,804,805,806‧‧‧步驟
以下參照附圖只透過舉例說明本發明,其中: 圖1顯示依據本發明一實施例之在一裝載階段的一裝置的示意側視圖; 圖2顯示依據本發明一實施例之在一處理階段的圖1揭露裝置的示意側視圖; 圖3顯示依據本發明另一實施例之一裝置的示意側視圖; 圖4顯示依據本發明又一實施例之一裝置的示意側視圖; 圖5顯示依據本發明一實施例之一裝置的某些細節; 圖6顯示依據本發明再一實施例之一裝置的示意側視圖; 圖7顯示依據本發明另一實施例之一裝置的示意側視圖;及 圖8顯示依據本發明一實施例之一方法。
105‧‧‧基材
110‧‧‧外腔室
115‧‧‧裝載埠;裝載鎖
120‧‧‧(可移式)反應腔室
125‧‧‧饋入線
130‧‧‧基材支架
140‧‧‧移動元件
145‧‧‧致動器
150‧‧‧排出線
155‧‧‧加熱器
160‧‧‧自由基饋入管
161‧‧‧固定凸緣或軸環
Claims (16)
- 一種沉積或清潔裝置,其包含:一外腔室;一反應腔室,其在該外腔室內側而形成一雙腔室結構,其中該裝置包含一移動元件,該移動元件組配成容許該反應腔室在該外腔室內側之一處理位置與一下降位置之間的垂直移動,該下降位置係用以將一或多數基材載入該反應腔室,其中該移動元件形成該裝置之一排出線的一部份。
- 如請求項1之裝置,其中該裝置係組配成藉由該反應腔室之向下移動而形成一裝載口到該反應腔室中。
- 如請求項1或2之裝置,其中該反應腔室係組配成在該反應腔室向下移動時自一上固定部件分離以便開啟用以裝載之一路徑。
- 如請求項1或2之裝置,其包含:一裝載埠,其在該外腔室之側用以將該一或多數基材通過該外腔室之該側載入該反應腔室。
- 如請求項1之裝置,其中該移動元件係一真空伸縮管。
- 如請求項1或2之裝置,其包含:一加熱器,其在該外腔室之內側,但在該反應腔室之外側。
- 如請求項1或2之裝置,其包含惰性氣體 饋入部,其進入該外腔室且進入形成在該等反應腔室與外腔室壁間之一中間空間,以及該惰性氣體自該中間空間送出之出口。
- 如請求項1或2之裝置,其中該裝置係一原子層沉積(ALD)裝置或一化學氣相沉積(CVD)裝置。
- 一種處理沉積或清潔反應器之方法,其包含以下步驟:提供一沉積或清潔反應器之一反應腔室,該反應腔室具有一處理位置及一下降位置;及藉由設置在該沉積或清潔反應器之一排出線中的一元件,使該反應腔室在該處理位置與該下降位置之間移動,該下降位置係用以將一或多數基材載入該反應腔室。
- 如請求項9之方法,其包含以下步驟:藉由該反應腔室之向下移動而形成一裝載口到該反應腔室中。
- 如請求項9或10之方法,其包含以下步驟:在該反應腔室向下移動時,使該反應腔室自一上固定部件分離。
- 如請求項9或10之方法,其包含以下步驟:將該一或多數基材通過包圍該反應腔室之一外腔室的一側載入該反應腔室。
- 如請求項9或10之方法,其包含以下步 驟:藉由一氣密撓曲元件移動該反應腔室。
- 如請求項13之方法,其中該氣密撓曲元件係為一真空伸縮管。
- 如請求項9或10之方法,其包含以下步驟:對形成在該反應腔室與外腔室壁間之一中間空間提供比反應腔室壓力大之一壓力。
- 如請求項9或10之方法,其包含以下步驟:在該反應腔室內之該一或多數基材上實施一原子層沉積(ALD)方法。
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ES2928391T3 (es) | 2022-11-17 |
TW201839164A (zh) | 2018-11-01 |
DE17895903T1 (de) | 2020-01-16 |
US11970774B2 (en) | 2024-04-30 |
EP3559307B1 (en) | 2022-08-03 |
JP6697640B2 (ja) | 2020-05-20 |
US20190390339A1 (en) | 2019-12-26 |
CN110234793A (zh) | 2019-09-13 |
RU2727634C1 (ru) | 2020-07-22 |
EP3559307A4 (en) | 2020-03-11 |
KR20190110614A (ko) | 2019-09-30 |
EP3559307A1 (en) | 2019-10-30 |
US20230193461A1 (en) | 2023-06-22 |
WO2018146370A1 (en) | 2018-08-16 |
KR102153876B1 (ko) | 2020-09-10 |
JP2020506291A (ja) | 2020-02-27 |
CN110234793B (zh) | 2020-10-02 |
US11725279B2 (en) | 2023-08-15 |
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