DE17895903T1 - Abscheidungs- oder Reinigungsvorrichtung mit beweglicher Struktur und Verfahren zum Betrieb - Google Patents

Abscheidungs- oder Reinigungsvorrichtung mit beweglicher Struktur und Verfahren zum Betrieb Download PDF

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DE17895903T1
DE17895903T1 DE17895903.7T DE17895903T DE17895903T1 DE 17895903 T1 DE17895903 T1 DE 17895903T1 DE 17895903 T DE17895903 T DE 17895903T DE 17895903 T1 DE17895903 T1 DE 17895903T1
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reaction chamber
chamber
moving
loading
substrates
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Timo Malinen
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Picosun Oy
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Picosun Oy
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

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  • Chemical & Material Sciences (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Abscheidungs- oder Reinigungsvorrichtung, aufweisend : eine äußere Kammer; eine Reaktionskammer innerhalb der äußeren Kammer, bildend eine doppelte Kammerstruktur, dadurch gekennzeichnet, dass die Reaktionskammer konfiguriert ist, zwischen einer Verarbeitungsposition und einer abgesenkten Position innerhalb der äußeren Kammer sich zu bewegen, wobei die abgesenkte Position zum Laden von einem oder mehr Substraten in die Reaktionskammer dient.

Claims (19)

  1. Abscheidungs- oder Reinigungsvorrichtung, aufweisend : eine äußere Kammer; eine Reaktionskammer innerhalb der äußeren Kammer, bildend eine doppelte Kammerstruktur, dadurch gekennzeichnet, dass die Reaktionskammer konfiguriert ist, zwischen einer Verarbeitungsposition und einer abgesenkten Position innerhalb der äußeren Kammer sich zu bewegen, wobei die abgesenkte Position zum Laden von einem oder mehr Substraten in die Reaktionskammer dient.
  2. Vorrichtung nach Anspruch 1, wobei die Vorrichtung konfiguriert ist, eine Ladeöffnung in die Reaktionskammer zu bilden, und zwar durch Abwärtsbewegung der Reaktionskammer.
  3. Vorrichtung nach Anspruch 1 oder 2, wobei die Reaktionskammer konfiguriert ist, sich von einem oberen stationären Teil zu lösen, und zwar bei Abwärtsbewegung der Reaktionskammer, um einen Pfad für die Beladung zu öffnen.
  4. Vorrichtung nach einem vorhergehenden Anspruch, aufweisend : einen Ladeanschluß an der Seite der äußeren Kammer, zum Laden der ein oder mehr Substrate in die Reaktionskammer durch die Seite der äußeren Kammer.
  5. Vorrichtung nach einem vorhergehenden Anspruch, aufweisend : ein sich bewegendes Element, das konfiguriert ist, eine vertikale Bewegung der Reaktionskammer zu ermöglichen.
  6. Vorrichtung nach Anspruch 5, wobei das sich bewegende Element einen Teil einer Abgasleitung der Vorrichtung bildet.
  7. Vorrichtung nach Anspruch 5 oder 6, wobei das sich bewegende Element ein Vakuumbalg ist.
  8. Vorrichtung nach einem vorhergehenden Anspruch, aufweisend : eine Heizeinrichtung innerhalb der äußeren Kammer aber auf der Außenseite der Reaktionskammer.
  9. Vorrichtung nach einem vorhergehenden Anspruch, aufweisend inaktive Gas-Einführung in die äußere Kammer in einen Zwischenraum, der gebildet ist zwischen der Reaktionskammer und äußeren Kammerwänden und dem Auslass des inaktiven Gases von dem Zwischenraum.
  10. Vorrichtung nach einem vorhergehenden Anspruch, wobei die Vorrichtung eine Atomschicht-Abscheidungs-, ALD, Vorrichtung ist oder eine chemische Dampfabscheidungs-, CVD, Vorrichtung ist.
  11. Verfahren aufweisend : Bereitstellen einer Reaktionskammer eines Abscheidungs- oder Reinigungsreaktors mit einer Verarbeitungsposition und einer abgesenkten Position; und Bewegen der Reaktionskammer zwischen der Verarbeitungsposition und der abgesenkten Position, wobei die abgesenkte Position zum Laden von einem oder mehr Substraten in die Reaktionskammer dient.
  12. Verfahren nach Anspruch 11, aufweisend Bilden einer Ladeöffnung in die Reaktionskammer, und zwar durch Abwärtsbewegung der Reaktionskammer.
  13. Verfahren nach Anspruch 11 oder 12, aufweisend : Lösen der Reaktionskammer von einem oberen stationären Teil, und zwar bei Abwärtsbewegung der Reaktionskammer.
  14. Verfahren nach einem vorhergehenden Anspruch 11-13, aufweisend : Laden der ein oder mehr Substrate in die Reaktionskammer durch eine Seite einer äußeren Kammer, die die Reaktionskammer umgibt.
  15. Verfahren nach einem vorhergehenden Anspruch 11-14, aufweisend : Bewegen der Reaktionskammer durch ein gasdichtes Biegeelement, zB einen Vakuumbalg.
  16. Verfahren nach einem vorhergehenden Anspruch 11-15, aufweisend : Bewegen der Reaktionskammer durch ein Element, das in eine Abgasleitung des Abscheidungs- oder Reinigungsreaktors positioniert ist.
  17. Verfahren nach einem vorhergehenden Anspruch 11-16, aufweisend : Bereitstellen eines Zwischenraums, der gebildet ist zwischen der Reaktionskammer und äußeren Kammerwänden mit einem grösseren Druck im Vergleich zu dem Reaktionskammer-Druck.
  18. Verfahren nach einem vorhergehenden Anspruch, aufweisend Durchführen eines Atomschicht-Abscheidungs-, ALD, Verfahrens auf einem oder mehr Substraten innerhalb der Reaktionskammer.
  19. Abscheidungs- oder Reinigungsreaktor, aufweisend eine Einrichtung zum Implementieren des Verfahrens nach einem vorhergehenden Anspruch 11-18.
DE17895903.7T 2017-02-08 2017-02-08 Abscheidungs- oder Reinigungsvorrichtung mit beweglicher Struktur und Verfahren zum Betrieb Pending DE17895903T1 (de)

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Application Number Priority Date Filing Date Title
EP17895903.7A EP3559307B1 (de) 2017-02-08 2017-02-08 Abscheidungs- oder reinigungsvorrichtung mit beweglicher struktur und verfahren zum betrieb
PCT/FI2017/050071 WO2018146370A1 (en) 2017-02-08 2017-02-08 Deposition or cleaning apparatus with movable structure and method of operation

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DE17895903T1 true DE17895903T1 (de) 2020-01-16

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US (2) US11725279B2 (de)
EP (1) EP3559307B1 (de)
JP (1) JP6697640B2 (de)
KR (1) KR102153876B1 (de)
CN (1) CN110234793B (de)
DE (1) DE17895903T1 (de)
ES (1) ES2928391T3 (de)
RU (1) RU2727634C1 (de)
TW (1) TWI806848B (de)
WO (1) WO2018146370A1 (de)

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JP6681452B1 (ja) * 2018-10-19 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
KR102412341B1 (ko) * 2019-06-25 2022-06-23 피코순 오와이 기판 후면 보호
KR102271566B1 (ko) * 2019-10-28 2021-07-01 세메스 주식회사 기판 처리 장치
FI129609B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT
RU2767915C1 (ru) * 2020-12-14 2022-03-22 Общество с ограниченной ответственностью "Оксифилм" (ООО "Оксифилм") Система для проведения процесса химического осаждения из паров летучих прекурсоров
WO2022202364A1 (ja) * 2021-03-23 2022-09-29 東京エレクトロン株式会社 半導体製造装置及び半導体製造装置用の部品
FI130387B (fi) 2021-03-30 2023-08-07 Beneq Oy Atomikerroskasvatuslaite
JP7197739B2 (ja) * 2021-05-10 2022-12-27 ピコサン オーワイ 基板処理装置及び方法
JP7308330B2 (ja) * 2021-05-10 2023-07-13 ピコサン オーワイ 基板処理装置及び方法

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EP3559307A1 (de) 2019-10-30
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TW201839164A (zh) 2018-11-01
KR102153876B1 (ko) 2020-09-10
EP3559307B1 (de) 2022-08-03
WO2018146370A1 (en) 2018-08-16
US20230193461A1 (en) 2023-06-22
US11970774B2 (en) 2024-04-30
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