SG11202111277UA - High step coverage tungsten deposition - Google Patents

High step coverage tungsten deposition

Info

Publication number
SG11202111277UA
SG11202111277UA SG11202111277UA SG11202111277UA SG11202111277UA SG 11202111277U A SG11202111277U A SG 11202111277UA SG 11202111277U A SG11202111277U A SG 11202111277UA SG 11202111277U A SG11202111277U A SG 11202111277UA SG 11202111277U A SG11202111277U A SG 11202111277UA
Authority
SG
Singapore
Prior art keywords
step coverage
high step
tungsten deposition
tungsten
deposition
Prior art date
Application number
SG11202111277UA
Other languages
English (en)
Inventor
Michael Bowes
Tsung-Han Yang
Anand Chandrashekar
Xing Zhang
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202111277UA publication Critical patent/SG11202111277UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11202111277UA 2019-04-11 2020-04-07 High step coverage tungsten deposition SG11202111277UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962832291P 2019-04-11 2019-04-11
PCT/US2020/027107 WO2020210260A1 (en) 2019-04-11 2020-04-07 High step coverage tungsten deposition

Publications (1)

Publication Number Publication Date
SG11202111277UA true SG11202111277UA (en) 2021-11-29

Family

ID=72751976

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202111277UA SG11202111277UA (en) 2019-04-11 2020-04-07 High step coverage tungsten deposition

Country Status (7)

Country Link
US (1) US12002679B2 (zh)
JP (1) JP2022522226A (zh)
KR (1) KR20210141762A (zh)
CN (1) CN113710830A (zh)
SG (1) SG11202111277UA (zh)
TW (1) TW202104638A (zh)
WO (1) WO2020210260A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
JP2022513479A (ja) 2018-12-14 2022-02-08 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
JP2022544931A (ja) 2019-08-12 2022-10-24 ラム リサーチ コーポレーション タングステン堆積
JP7295749B2 (ja) * 2019-09-13 2023-06-21 キオクシア株式会社 半導体装置の製造方法
WO2024097068A1 (en) * 2022-11-02 2024-05-10 Lam Research Corporation Dual nitrogen flow capability for low fluorine tungsten deposition

Family Cites Families (314)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
JPS5629648A (en) 1979-08-16 1981-03-25 Toshiba Tungaloy Co Ltd High hardness sintered body
JPS62216224A (ja) 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
JPS62260340A (ja) 1986-05-06 1987-11-12 Toshiba Corp 半導体装置の製造方法
JP2560028B2 (ja) 1987-05-07 1996-12-04 新技術事業団 ホウ化チタンの製造方法
US4746375A (en) 1987-05-08 1988-05-24 General Electric Company Activation of refractory metal surfaces for electroless plating
JPH0266399A (ja) 1988-08-30 1990-03-06 Semiconductor Energy Lab Co Ltd 気体充填用容器及びその作製方法
US4962063A (en) 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
JPH02187031A (ja) 1989-01-14 1990-07-23 Sharp Corp 半導体装置
US5250329A (en) 1989-04-06 1993-10-05 Microelectronics And Computer Technology Corporation Method of depositing conductive lines on a dielectric
GB8907898D0 (en) 1989-04-07 1989-05-24 Inmos Ltd Semiconductor devices and fabrication thereof
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
EP1069610A2 (en) 1990-01-08 2001-01-17 Lsi Logic Corporation Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus
KR100209856B1 (ko) 1990-08-31 1999-07-15 가나이 쓰도무 반도체장치의 제조방법
JPH04142061A (ja) 1990-10-02 1992-05-15 Sony Corp タングステンプラグの形成方法
JP3040177B2 (ja) 1990-12-17 2000-05-08 沖電気工業株式会社 半導体素子の配線形成方法
US5250467A (en) 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
US5308655A (en) 1991-08-16 1994-05-03 Materials Research Corporation Processing for forming low resistivity titanium nitride films
US5567583A (en) 1991-12-16 1996-10-22 Biotronics Corporation Methods for reducing non-specific priming in DNA detection
JPH05226280A (ja) 1992-02-14 1993-09-03 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5370739A (en) 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5326723A (en) 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
KR950012738B1 (ko) 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JP3014019B2 (ja) 1993-11-26 2000-02-28 日本電気株式会社 半導体装置の製造方法
KR970009867B1 (ko) 1993-12-17 1997-06-18 현대전자산업 주식회사 반도체 소자의 텅스텐 실리사이드 형성방법
JP3291889B2 (ja) 1994-02-15 2002-06-17 ソニー株式会社 ドライエッチング方法
EP0704551B1 (en) 1994-09-27 2000-09-06 Applied Materials, Inc. Method of processing a substrate in a vacuum processing chamber
JPH08115984A (ja) 1994-10-17 1996-05-07 Hitachi Ltd 半導体装置及びその製造方法
US5545581A (en) 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
US6001729A (en) 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
JP2737764B2 (ja) 1995-03-03 1998-04-08 日本電気株式会社 半導体装置及びその製造方法
JP3422345B2 (ja) 1995-05-31 2003-06-30 日本電信電話株式会社 タングステン膜の形成方法
JPH0922896A (ja) 1995-07-07 1997-01-21 Toshiba Corp 金属膜の選択的形成方法
JPH0927596A (ja) 1995-07-11 1997-01-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US5863819A (en) 1995-10-25 1999-01-26 Micron Technology, Inc. Method of fabricating a DRAM access transistor with dual gate oxide technique
TW310461B (zh) 1995-11-10 1997-07-11 Matsushita Electric Ind Co Ltd
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5833817A (en) 1996-04-22 1998-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving conformity and contact bottom coverage of sputtered titanium nitride barrier layers
US5633200A (en) 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer
US5963833A (en) 1996-07-03 1999-10-05 Micron Technology, Inc. Method for cleaning semiconductor wafers and
US5916634A (en) 1996-10-01 1999-06-29 Sandia Corporation Chemical vapor deposition of W-Si-N and W-B-N
KR100214852B1 (ko) 1996-11-02 1999-08-02 김영환 반도체 디바이스의 금속 배선 형성 방법
US6310300B1 (en) 1996-11-08 2001-10-30 International Business Machines Corporation Fluorine-free barrier layer between conductor and insulator for degradation prevention
KR100255516B1 (ko) 1996-11-28 2000-05-01 김영환 반도체 장치의 금속배선 및 그 형성방법
US6297152B1 (en) 1996-12-12 2001-10-02 Applied Materials, Inc. CVD process for DCS-based tungsten silicide
JP3090074B2 (ja) 1997-01-20 2000-09-18 日本電気株式会社 半導体装置及びその製造方法
US5804249A (en) 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US6037248A (en) 1997-06-13 2000-03-14 Micron Technology, Inc. Method of fabricating integrated circuit wiring with low RC time delay
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US5956609A (en) 1997-08-11 1999-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing stress and improving step-coverage of tungsten interconnects and plugs
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US5926720A (en) 1997-09-08 1999-07-20 Lsi Logic Corporation Consistent alignment mark profiles on semiconductor wafers using PVD shadowing
US7829144B2 (en) 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
KR100272523B1 (ko) 1998-01-26 2000-12-01 김영환 반도체소자의배선형성방법
US6284316B1 (en) 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
JPH11260759A (ja) 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6452276B1 (en) 1998-04-30 2002-09-17 International Business Machines Corporation Ultra thin, single phase, diffusion barrier for metal conductors
US6066366A (en) 1998-07-22 2000-05-23 Applied Materials, Inc. Method for depositing uniform tungsten layers by CVD
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
KR100273767B1 (ko) 1998-10-28 2001-01-15 윤종용 반도체소자의 텅스텐막 제조방법 및 그에 따라 제조되는 반도체소자
US6037263A (en) 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds
US6331483B1 (en) * 1998-12-18 2001-12-18 Tokyo Electron Limited Method of film-forming of tungsten
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
US20010014533A1 (en) 1999-01-08 2001-08-16 Shih-Wei Sun Method of fabricating salicide
JP3206578B2 (ja) 1999-01-11 2001-09-10 日本電気株式会社 多層配線構造をもつ半導体装置の製造方法
JP4570704B2 (ja) 1999-02-17 2010-10-27 株式会社アルバック バリア膜製造方法
US6306211B1 (en) 1999-03-23 2001-10-23 Matsushita Electric Industrial Co., Ltd. Method for growing semiconductor film and method for fabricating semiconductor device
TW452607B (en) 1999-03-26 2001-09-01 Nat Science Council Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
US6245654B1 (en) 1999-03-31 2001-06-12 Taiwan Semiconductor Manufacturing Company, Ltd Method for preventing tungsten contact/via plug loss after a backside pressure fault
US6294468B1 (en) 1999-05-24 2001-09-25 Agere Systems Guardian Corp. Method of chemical vapor depositing tungsten films
US6720261B1 (en) 1999-06-02 2004-04-13 Agere Systems Inc. Method and system for eliminating extrusions in semiconductor vias
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US6355558B1 (en) 1999-06-10 2002-03-12 Texas Instruments Incorporated Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
US6309964B1 (en) 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
US6265312B1 (en) 1999-08-02 2001-07-24 Stmicroelectronics, Inc. Method for depositing an integrated circuit tungsten film stack that includes a post-nucleation pump down step
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6309966B1 (en) 1999-09-03 2001-10-30 Motorola, Inc. Apparatus and method of a low pressure, two-step nucleation tungsten deposition
US6303480B1 (en) 1999-09-13 2001-10-16 Applied Materials, Inc. Silicon layer to improve plug filling by CVD
US6610151B1 (en) 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6924226B2 (en) 1999-10-02 2005-08-02 Uri Cohen Methods for making multiple seed layers for metallic interconnects
US6902763B1 (en) 1999-10-15 2005-06-07 Asm International N.V. Method for depositing nanolaminate thin films on sensitive surfaces
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
KR100330163B1 (ko) 2000-01-06 2002-03-28 윤종용 반도체 장치의 텅스텐 콘택 플러그 형성 방법
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6277744B1 (en) 2000-01-21 2001-08-21 Advanced Micro Devices, Inc. Two-level silane nucleation for blanket tungsten deposition
US6777331B2 (en) 2000-03-07 2004-08-17 Simplus Systems Corporation Multilayered copper structure for improving adhesion property
US6429126B1 (en) 2000-03-29 2002-08-06 Applied Materials, Inc. Reduced fluorine contamination for tungsten CVD
JP5184731B2 (ja) 2000-05-18 2013-04-17 コーニング インコーポレイテッド 固体酸化物燃料電池用可撓性電極／電解質構造体、燃料電池装置、およびその作成方法
JP3651360B2 (ja) 2000-05-19 2005-05-25 株式会社村田製作所 電極膜の形成方法
US20030008070A1 (en) 2001-06-12 2003-01-09 Applied Materials,Inc Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor
US7253076B1 (en) 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
JP2002016066A (ja) 2000-06-27 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6491978B1 (en) 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US6218301B1 (en) 2000-07-31 2001-04-17 Applied Materials, Inc. Deposition of tungsten films from W(CO)6
US6740591B1 (en) 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
AU2002214283A1 (en) 2000-11-17 2002-05-27 Tokyo Electron Limited Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
US6908848B2 (en) 2000-12-20 2005-06-21 Samsung Electronics, Co., Ltd. Method for forming an electrical interconnection providing improved surface morphology of tungsten
KR100375230B1 (ko) 2000-12-20 2003-03-08 삼성전자주식회사 매끄러운 텅스텐 표면을 갖는 반도체 장치의 배선 제조방법
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US20020190379A1 (en) 2001-03-28 2002-12-19 Applied Materials, Inc. W-CVD with fluorine-free tungsten nucleation
US20020168840A1 (en) 2001-05-11 2002-11-14 Applied Materials, Inc. Deposition of tungsten silicide films
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US6686278B2 (en) 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US20070009658A1 (en) 2001-07-13 2007-01-11 Yoo Jong H Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
TW581822B (en) 2001-07-16 2004-04-01 Applied Materials Inc Formation of composite tungsten films
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP4032872B2 (ja) 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4595989B2 (ja) 2001-08-24 2010-12-08 東京エレクトロン株式会社 成膜方法
WO2003025243A2 (en) 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
TW589684B (en) 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
JP2003142484A (ja) 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US6566262B1 (en) 2001-11-01 2003-05-20 Lsi Logic Corporation Method for creating self-aligned alloy capping layers for copper interconnect structures
TWI253478B (en) 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US20030091870A1 (en) 2001-11-15 2003-05-15 Siddhartha Bhowmik Method of forming a liner for tungsten plugs
KR20030050652A (ko) 2001-12-19 2003-06-25 주식회사 하이닉스반도체 텅스텐막의 형성 방법
US20030123216A1 (en) 2001-12-27 2003-07-03 Yoon Hyungsuk A. Deposition of tungsten for the formation of conformal tungsten silicide
CN1643179B (zh) 2002-01-17 2010-05-26 松德沃技术公司 Ald装置和方法
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6566250B1 (en) 2002-03-18 2003-05-20 Taiwant Semiconductor Manufacturing Co., Ltd Method for forming a self aligned capping layer
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
US6905543B1 (en) 2002-06-19 2005-06-14 Novellus Systems, Inc Methods of forming tungsten nucleation layer
TWI287559B (en) 2002-08-22 2007-10-01 Konica Corp Organic-inorganic hybrid film, its manufacturing method, optical film, and polarizing film
US6790773B1 (en) 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
US6706625B1 (en) 2002-12-06 2004-03-16 Chartered Semiconductor Manufacturing Ltd. Copper recess formation using chemical process for fabricating barrier cap for lines and vias
US6962873B1 (en) 2002-12-10 2005-11-08 Novellus Systems, Inc. Nitridation of electrolessly deposited cobalt
US7311944B2 (en) 2002-12-23 2007-12-25 Applied Thin Films, Inc. Aluminum phosphate coatings
JP4429919B2 (ja) 2002-12-27 2010-03-10 株式会社アルバック 窒化タングステン膜の成膜方法
JP2004235456A (ja) 2003-01-30 2004-08-19 Seiko Epson Corp 成膜装置、成膜方法および半導体装置の製造方法
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
CN1241251C (zh) 2003-05-15 2006-02-08 上海集成电路研发中心有限公司 一种改进的钨插销结构的工艺流程
JP2007523994A (ja) 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
JP2005029821A (ja) 2003-07-09 2005-02-03 Tokyo Electron Ltd 成膜方法
US7754604B2 (en) 2003-08-26 2010-07-13 Novellus Systems, Inc. Reducing silicon attack and improving resistivity of tungsten nitride film
JP4606006B2 (ja) 2003-09-11 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6924223B2 (en) 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
US7078341B2 (en) 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors
KR20050054122A (ko) 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
KR100557626B1 (ko) 2003-12-23 2006-03-10 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성 방법
US20050139838A1 (en) 2003-12-26 2005-06-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR100528030B1 (ko) 2003-12-30 2005-11-15 주식회사 아이피에스 박막 증착 방법
KR101108304B1 (ko) 2004-02-26 2012-01-25 노벨러스 시스템즈, 인코포레이티드 질화 텅스텐의 증착
CN100370585C (zh) 2004-04-12 2008-02-20 株式会社爱发科 隔离膜的形成方法及电极膜的形成方法
EP1741119B1 (en) 2004-04-21 2019-04-03 Lumileds Holding B.V. Method for the thermal treatment of tungsten electrodes free from thorium oxide for high-pressure discharge lamps
US7605469B2 (en) 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060145190A1 (en) 2004-12-31 2006-07-06 Salzman David B Surface passivation for III-V compound semiconductors
KR100642750B1 (ko) 2005-01-31 2006-11-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7344983B2 (en) 2005-03-18 2008-03-18 International Business Machines Corporation Clustered surface preparation for silicide and metal contacts
US7220671B2 (en) 2005-03-31 2007-05-22 Intel Corporation Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
JP4738178B2 (ja) 2005-06-17 2011-08-03 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4945937B2 (ja) 2005-07-01 2012-06-06 東京エレクトロン株式会社 タングステン膜の形成方法、成膜装置及び記憶媒体
JP4864368B2 (ja) 2005-07-21 2012-02-01 シャープ株式会社 気相堆積方法
US7517798B2 (en) 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US7235485B2 (en) 2005-10-14 2007-06-26 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor device
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7524765B2 (en) 2005-11-02 2009-04-28 Intel Corporation Direct tailoring of the composition and density of ALD films
US7368394B2 (en) 2006-02-27 2008-05-06 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
US7276796B1 (en) 2006-03-15 2007-10-02 International Business Machines Corporation Formation of oxidation-resistant seed layer for interconnect applications
JP2007250907A (ja) 2006-03-16 2007-09-27 Renesas Technology Corp 半導体装置およびその製造方法
US8258057B2 (en) 2006-03-30 2012-09-04 Intel Corporation Copper-filled trench contact for transistor performance improvement
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US7956465B2 (en) 2006-05-08 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures of integrated circuits
US7828504B2 (en) 2006-05-12 2010-11-09 Axcellis Technologies, Inc. Combination load lock for handling workpieces
US7557047B2 (en) 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
KR100884339B1 (ko) 2006-06-29 2009-02-18 주식회사 하이닉스반도체 반도체 소자의 텅스텐막 형성방법 및 이를 이용한 텅스텐배선층 형성방법
KR100705936B1 (ko) 2006-06-30 2007-04-13 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성방법
US7355254B2 (en) 2006-06-30 2008-04-08 Intel Corporation Pinning layer for low resistivity N-type source drain ohmic contacts
US8153831B2 (en) 2006-09-28 2012-04-10 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
KR100894769B1 (ko) 2006-09-29 2009-04-24 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성방법
US7939455B2 (en) 2006-09-29 2011-05-10 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
KR100881391B1 (ko) 2006-09-29 2009-02-05 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
KR20080036679A (ko) 2006-10-24 2008-04-29 삼성전자주식회사 불 휘발성 메모리 소자의 형성 방법
US7675119B2 (en) 2006-12-25 2010-03-09 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof
KR100874829B1 (ko) 2006-12-26 2008-12-19 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
KR20080061978A (ko) 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 소자의 배선 형성방법
US8435898B2 (en) 2007-04-05 2013-05-07 Freescale Semiconductor, Inc. First inter-layer dielectric stack for non-volatile memory
US20080254619A1 (en) 2007-04-14 2008-10-16 Tsang-Jung Lin Method of fabricating a semiconductor device
WO2008129508A2 (en) 2007-04-20 2008-10-30 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of transition metal carbide containing films
JP5277696B2 (ja) 2008-04-07 2013-08-28 パナソニック株式会社 圧電デバイスの製造方法
CN101308794B (zh) 2007-05-15 2010-09-15 应用材料股份有限公司 钨材料的原子层沉积
JP2008288289A (ja) 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7655567B1 (en) 2007-07-24 2010-02-02 Novellus Systems, Inc. Methods for improving uniformity and resistivity of thin tungsten films
KR101225642B1 (ko) 2007-11-15 2013-01-24 삼성전자주식회사 Ｈ2 원격 플라즈마 처리를 이용한 반도체 소자의 콘택플러그 형성방법
WO2009073361A1 (en) 2007-11-29 2009-06-11 Lam Research Corporation Pulsed bias plasma process to control microloading
KR100939777B1 (ko) 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
US8080324B2 (en) 2007-12-03 2011-12-20 Kobe Steel, Ltd. Hard coating excellent in sliding property and method for forming same
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US20090162681A1 (en) 2007-12-21 2009-06-25 Artur Kolics Activation solution for electroless plating on dielectric layers
US8053365B2 (en) 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
KR100919808B1 (ko) 2008-01-02 2009-10-01 주식회사 하이닉스반도체 반도체소자의 텅스텐막 형성방법
US8062977B1 (en) 2008-01-31 2011-11-22 Novellus Systems, Inc. Ternary tungsten-containing resistive thin films
KR101015125B1 (ko) 2008-03-21 2011-02-16 주식회사 하이닉스반도체 계면반응배리어를 구비한 반도체장치 제조 방법
KR101163825B1 (ko) 2008-03-28 2012-07-09 도쿄엘렉트론가부시키가이샤 정전척 및 그 제조 방법
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8385644B2 (en) 2008-07-08 2013-02-26 Zeitera, Llc Digital video fingerprinting based on resultant weighted gradient orientation computation
US7968460B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US7830016B2 (en) 2008-06-30 2010-11-09 Intel Corporation Seed layer for reduced resistance tungsten film
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
KR20100029952A (ko) 2008-09-09 2010-03-18 주식회사 하이닉스반도체 금속성 캡핑층을 구비한 상변화 메모리 소자 및 그 제조 방법
US20100072623A1 (en) 2008-09-19 2010-03-25 Advanced Micro Devices, Inc. Semiconductor device with improved contact plugs, and related fabrication methods
JP2010093116A (ja) 2008-10-09 2010-04-22 Panasonic Corp 半導体装置及び半導体装置の製造方法
US20100120245A1 (en) 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US7964502B2 (en) 2008-11-25 2011-06-21 Freescale Semiconductor, Inc. Multilayered through via
US7825024B2 (en) 2008-11-25 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming through-silicon vias
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US8110877B2 (en) 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
US8236691B2 (en) 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
KR101263856B1 (ko) 2008-12-31 2013-05-13 어플라이드 머티어리얼스, 인코포레이티드 비저항이 감소되고 표면 형태가 개선된 텅스텐 필름을 증착하는 방법
DE102009015747B4 (de) 2009-03-31 2013-08-08 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zur Herstellung von Transistoren mit Metallgateelektrodenstrukturen und Gatedielektrikum mit großem ε und einer Zwischenätzstoppschicht
US8623733B2 (en) 2009-04-16 2014-01-07 Novellus Systems, Inc. Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US20110020546A1 (en) 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
CN101572291B (zh) 2009-06-12 2010-09-15 中国科学院上海微系统与信息技术研究所 一种实现多级存储的存储器单元结构及其制作方法
US8039394B2 (en) 2009-06-26 2011-10-18 Seagate Technology Llc Methods of forming layers of alpha-tantalum
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8207062B2 (en) 2009-09-09 2012-06-26 Novellus Systems, Inc. Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
WO2011062560A1 (en) 2009-11-19 2011-05-26 National University Of Singapore Method for producing t cell receptor-like monoclonal antibodies and uses thereof
DE102009055392B4 (de) 2009-12-30 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterbauelement und Verfahren zur Herstellung des Halbleiterbauelements
CN101789369A (zh) 2010-01-28 2010-07-28 上海宏力半导体制造有限公司 多金属钨栅极刻蚀方法
JP5729911B2 (ja) 2010-03-11 2015-06-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン膜の製造方法およびタングステン膜を堆積させる装置
US8709948B2 (en) 2010-03-12 2014-04-29 Novellus Systems, Inc. Tungsten barrier and seed for copper filled TSV
KR101356332B1 (ko) 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
US9129945B2 (en) 2010-03-24 2015-09-08 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
KR101340793B1 (ko) 2010-07-09 2013-12-11 노벨러스 시스템즈, 인코포레이티드 고 종횡비 특징부 내부로 텅스텐 증착하기
US8778797B2 (en) 2010-09-27 2014-07-15 Novellus Systems, Inc. Systems and methods for selective tungsten deposition in vias
US20120199887A1 (en) * 2011-02-03 2012-08-09 Lana Chan Methods of controlling tungsten film properties
US20120225191A1 (en) 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US8865594B2 (en) 2011-03-10 2014-10-21 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8546250B2 (en) 2011-08-18 2013-10-01 Wafertech Llc Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
US8916435B2 (en) 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP5710529B2 (ja) 2011-09-22 2015-04-30 株式会社東芝 半導体装置及びその製造方法
US8617985B2 (en) 2011-10-28 2013-12-31 Applied Materials, Inc. High temperature tungsten metallization process
JP5959991B2 (ja) 2011-11-25 2016-08-02 東京エレクトロン株式会社 タングステン膜の成膜方法
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
CN102867953B (zh) 2012-07-24 2015-01-21 龙能科技（苏州）有限公司 用氢氧化物或羟基氧化物生产锂离子电池正极材料的方法
US9969622B2 (en) 2012-07-26 2018-05-15 Lam Research Corporation Ternary tungsten boride nitride films and methods for forming same
US8975184B2 (en) 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
KR20140028992A (ko) 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 텅스텐 게이트전극을 구비한 반도체장치 및 그 제조 방법
KR101990051B1 (ko) 2012-08-31 2019-10-01 에스케이하이닉스 주식회사 무불소텅스텐 배리어층을 구비한 반도체장치 및 그 제조 방법
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
US9169556B2 (en) 2012-10-11 2015-10-27 Applied Materials, Inc. Tungsten growth modulation by controlling surface composition
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US8975142B2 (en) 2013-04-25 2015-03-10 Globalfoundries Inc. FinFET channel stress using tungsten contacts in raised epitaxial source and drain
JP6494940B2 (ja) 2013-07-25 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 異なるサイズのフィーチャへのボイドフリータングステン充填
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
JP5864503B2 (ja) 2013-09-30 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
CN105814677B (zh) 2013-10-18 2019-06-18 布鲁克斯自动化公司 处理设备
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
TWI672737B (zh) 2013-12-27 2019-09-21 美商蘭姆研究公司 允許低電阻率鎢特徵物填充之鎢成核程序
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9595470B2 (en) * 2014-05-09 2017-03-14 Lam Research Corporation Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
TW201700761A (zh) 2015-05-13 2017-01-01 應用材料股份有限公司 經由基材的有機金屬或矽烷預處理而改良的鎢膜
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
KR102397797B1 (ko) 2015-05-27 2022-05-12 램 리써치 코포레이션 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
TWI720106B (zh) 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
TWI732846B (zh) 2016-04-25 2021-07-11 美商應用材料股份有限公司 透過控制前驅物混合來強化金屬的空間ald
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10410872B2 (en) 2016-09-13 2019-09-10 Applied Materials, Inc. Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application
KR101923301B1 (ko) 2017-03-06 2018-11-28 한국전력공사 송전철탑 상향장치 및 방법
CN111095488A (zh) 2017-08-14 2020-05-01 朗姆研究公司 三维竖直nand字线的金属填充过程
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
KR20200079339A (ko) 2017-11-20 2020-07-02 램 리써치 코포레이션 자기 제한 성장
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
JP2022513479A (ja) 2018-12-14 2022-02-08 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
WO2020185618A1 (en) 2019-03-11 2020-09-17 Lam Research Corporation Precursors for deposition of molybdenum-containing films
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
JP2022544931A (ja) 2019-08-12 2022-10-24 ラム リサーチ コーポレーション タングステン堆積
US20230130557A1 (en) 2020-03-04 2023-04-27 Lam Research Corporation Reactant gas pulse delivery
CN115244666A (zh) 2020-03-06 2022-10-25 朗姆研究公司 钼的原子层蚀刻
KR20210137395A (ko) 2020-05-07 2021-11-17 에이에스엠 아이피 홀딩 비.브이. 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법
KR20230043796A (ko) 2020-07-29 2023-03-31 램 리써치 코포레이션 저저항 게이트 산화물 금속화 라이너
US11282711B2 (en) 2020-07-31 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma-assisted etching of metal oxides

Also Published As

Publication number Publication date
WO2020210260A1 (en) 2020-10-15
TW202104638A (zh) 2021-02-01
KR20210141762A (ko) 2021-11-23
US20220181158A1 (en) 2022-06-09
JP2022522226A (ja) 2022-04-14
CN113710830A (zh) 2021-11-26
US12002679B2 (en) 2024-06-04

Similar Documents

Publication Publication Date Title
SG11202111277UA (en) High step coverage tungsten deposition
SG11202012177VA (en) Thickness-limited electrospray deposition
SG11202102915TA (en) Methods for depositing tungsten or molybdenum films
EP4132125A4 (en) COVERAGE IMPROVEMENT
GB201810721D0 (en) Powder deposition
EP3918088A4 (en) HIGH COVERAGE STLFR
EP3891569A4 (en) COVERAGE PATH PLANNING
CA188849S (en) Showerhead
EP3906284A4 (en) COMPOSITION FOR TUNGSTEN CMP
GB201909538D0 (en) Deposition apparatus
EP3604612A4 (en) TUNGSTEN TARGET
GB201916621D0 (en) Sputter deposition
GB2575168B (en) Precursor selection for data-dependent tandem mass spectrometry
GB201907801D0 (en) Data-exchange between blockchains
NO20190133A1 (en) Fremgangsmåte for inspeksjon av rør
IL289980A (en) Preparations to inhibit tungsten burning
EP3971137A4 (en) MOLYBDENUM CARBIDE POWDER
SG11202010449RA (en) Pulsed plasma deposition etch step coverage improvement
CA188846S (en) Showerhead
GB201918942D0 (en) Plasma deposition apparatus
GB201916624D0 (en) Sputter deposition
GB201916623D0 (en) Sputter deposition
CA195860S (en) Showerhead
SG11202009514WA (en) Tungsten deposition without barrier layer
CA190993S (en) Showerhead