KR100961324B1 - 질화물 형광체와 그 제조 방법 및 발광 장치 - Google Patents
질화물 형광체와 그 제조 방법 및 발광 장치 Download PDFInfo
- Publication number
- KR100961324B1 KR100961324B1 KR1020037015150A KR20037015150A KR100961324B1 KR 100961324 B1 KR100961324 B1 KR 100961324B1 KR 1020037015150 A KR1020037015150 A KR 1020037015150A KR 20037015150 A KR20037015150 A KR 20037015150A KR 100961324 B1 KR100961324 B1 KR 100961324B1
- Authority
- KR
- South Korea
- Prior art keywords
- delete delete
- phosphor
- light
- light emitting
- nitride
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 1042
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 488
- 238000004519 manufacturing process Methods 0.000 title abstract description 109
- 238000000295 emission spectrum Methods 0.000 claims abstract description 226
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 162
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 160
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 102
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 49
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 41
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 37
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 35
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 35
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 34
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 27
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 26
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 26
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 24
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 22
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 22
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 21
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims description 115
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 56
- 239000012298 atmosphere Substances 0.000 claims description 51
- 229910052733 gallium Inorganic materials 0.000 claims description 36
- WAAQUBJIWXTCPY-UHFFFAOYSA-N [O-2].[Al+3].P.[Y+3] Chemical compound [O-2].[Al+3].P.[Y+3] WAAQUBJIWXTCPY-UHFFFAOYSA-N 0.000 claims description 25
- 229910052708 sodium Inorganic materials 0.000 claims description 25
- 229910052744 lithium Inorganic materials 0.000 claims description 22
- 229910052700 potassium Inorganic materials 0.000 claims description 22
- 229910052792 caesium Inorganic materials 0.000 claims description 12
- 229910052701 rubidium Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- NCJUURTXJSQZCW-UHFFFAOYSA-M [O-2].[O-2].[O-2].[O-2].[OH-].O.[Al+3].P.[Y+3].[Gd+3] Chemical compound [O-2].[O-2].[O-2].[O-2].[OH-].O.[Al+3].P.[Y+3].[Gd+3] NCJUURTXJSQZCW-UHFFFAOYSA-M 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 abstract description 95
- 229910052788 barium Inorganic materials 0.000 abstract description 70
- 229910052725 zinc Inorganic materials 0.000 abstract description 70
- 229910052732 germanium Inorganic materials 0.000 abstract description 35
- 229910052789 astatine Inorganic materials 0.000 abstract description 8
- 239000011575 calcium Substances 0.000 description 288
- 239000000126 substance Substances 0.000 description 196
- 239000002994 raw material Substances 0.000 description 178
- 239000011572 manganese Substances 0.000 description 154
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 138
- 239000004065 semiconductor Substances 0.000 description 123
- 150000001875 compounds Chemical class 0.000 description 109
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 96
- 229910052796 boron Inorganic materials 0.000 description 91
- 239000011133 lead Substances 0.000 description 91
- 239000002245 particle Substances 0.000 description 88
- 230000005284 excitation Effects 0.000 description 85
- 229910052581 Si3N4 Inorganic materials 0.000 description 79
- 239000000463 material Substances 0.000 description 75
- 229910052782 aluminium Inorganic materials 0.000 description 74
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 72
- 238000009877 rendering Methods 0.000 description 71
- 235000019557 luminance Nutrition 0.000 description 70
- 238000000034 method Methods 0.000 description 70
- -1 strontium nitride Chemical class 0.000 description 69
- 238000010304 firing Methods 0.000 description 68
- 239000010949 copper Substances 0.000 description 65
- 238000004020 luminiscence type Methods 0.000 description 64
- 230000008569 process Effects 0.000 description 63
- 229910007991 Si-N Inorganic materials 0.000 description 61
- 229910006294 Si—N Inorganic materials 0.000 description 61
- 239000012190 activator Substances 0.000 description 60
- 239000002585 base Substances 0.000 description 59
- 230000001976 improved effect Effects 0.000 description 59
- 230000000694 effects Effects 0.000 description 53
- 229910052802 copper Inorganic materials 0.000 description 51
- 229910052760 oxygen Inorganic materials 0.000 description 51
- 229910052751 metal Inorganic materials 0.000 description 50
- 239000002184 metal Substances 0.000 description 50
- 238000002156 mixing Methods 0.000 description 49
- 239000011651 chromium Substances 0.000 description 47
- 235000019646 color tone Nutrition 0.000 description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 45
- 229910052804 chromium Inorganic materials 0.000 description 43
- 238000010586 diagram Methods 0.000 description 43
- 230000001965 increasing effect Effects 0.000 description 43
- 229910052759 nickel Inorganic materials 0.000 description 43
- 229910052748 manganese Inorganic materials 0.000 description 42
- 229910002601 GaN Inorganic materials 0.000 description 41
- 238000006243 chemical reaction Methods 0.000 description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 38
- 239000012299 nitrogen atmosphere Substances 0.000 description 38
- 238000000576 coating method Methods 0.000 description 37
- 230000008859 change Effects 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 35
- 238000000695 excitation spectrum Methods 0.000 description 34
- 229910052718 tin Inorganic materials 0.000 description 34
- 238000013329 compounding Methods 0.000 description 33
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- 230000004907 flux Effects 0.000 description 31
- 239000010936 titanium Substances 0.000 description 31
- 229910052719 titanium Inorganic materials 0.000 description 31
- 239000003153 chemical reaction reagent Substances 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 30
- 229910052726 zirconium Inorganic materials 0.000 description 29
- 229910052735 hafnium Inorganic materials 0.000 description 28
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 27
- 229910006360 Si—O—N Inorganic materials 0.000 description 27
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 27
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 26
- 229910052790 beryllium Inorganic materials 0.000 description 25
- 229910052738 indium Inorganic materials 0.000 description 25
- 239000011734 sodium Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 238000000862 absorption spectrum Methods 0.000 description 24
- 229910052742 iron Inorganic materials 0.000 description 24
- 229910052750 molybdenum Inorganic materials 0.000 description 24
- 229910001940 europium oxide Inorganic materials 0.000 description 23
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 229910052582 BN Inorganic materials 0.000 description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 20
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
- 229910021529 ammonia Inorganic materials 0.000 description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 18
- 150000001342 alkaline earth metals Chemical class 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 18
- 239000010931 gold Substances 0.000 description 18
- 238000010298 pulverizing process Methods 0.000 description 18
- 238000010521 absorption reaction Methods 0.000 description 17
- 239000003086 colorant Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 230000007423 decrease Effects 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 16
- 239000003795 chemical substances by application Substances 0.000 description 15
- 230000002349 favourable effect Effects 0.000 description 15
- 229910021478 group 5 element Inorganic materials 0.000 description 15
- 229910021476 group 6 element Inorganic materials 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 230000005457 Black-body radiation Effects 0.000 description 13
- 229910052787 antimony Inorganic materials 0.000 description 13
- 239000000470 constituent Substances 0.000 description 13
- 230000020169 heat generation Effects 0.000 description 13
- 229910052702 rhenium Inorganic materials 0.000 description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 229910052745 lead Inorganic materials 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000654 additive Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 230000009467 reduction Effects 0.000 description 11
- 238000000227 grinding Methods 0.000 description 10
- 229910021472 group 8 element Inorganic materials 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 229910018516 Al—O Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910052797 bismuth Inorganic materials 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000010944 silver (metal) Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001354 calcination Methods 0.000 description 8
- 239000012467 final product Substances 0.000 description 8
- 239000002223 garnet Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229910021474 group 7 element Inorganic materials 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 150000003949 imides Chemical class 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 229910052706 scandium Inorganic materials 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 7
- 229910004122 SrSi Inorganic materials 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 229910052720 vanadium Inorganic materials 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910002113 barium titanate Inorganic materials 0.000 description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 229910004709 CaSi Inorganic materials 0.000 description 5
- 206010070834 Sensitisation Diseases 0.000 description 5
- 229920001807 Urea-formaldehyde Polymers 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 150000001408 amides Chemical class 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 230000008313 sensitization Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 4
- 229910052775 Thulium Inorganic materials 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- WABPQHHGFIMREM-YPZZEJLDSA-N lead-205 Chemical compound [205Pb] WABPQHHGFIMREM-YPZZEJLDSA-N 0.000 description 3
- 239000004611 light stabiliser Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910016066 BaSi Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N Indigo Chemical compound N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 229910017639 MgSi Inorganic materials 0.000 description 2
- 229910003174 MnOOH Inorganic materials 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910003668 SrAl Inorganic materials 0.000 description 2
- PHVROEVARXIQAI-UHFFFAOYSA-N [O-2].[Al+3].[Gd+3].[Y+3] Chemical compound [O-2].[Al+3].[Gd+3].[Y+3] PHVROEVARXIQAI-UHFFFAOYSA-N 0.000 description 2
- UHAQRCJYQAKQEE-UHFFFAOYSA-M [O-2].[OH-].O.[Al+3].P Chemical compound [O-2].[OH-].O.[Al+3].P UHAQRCJYQAKQEE-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 238000000975 co-precipitation Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical group 0.000 description 2
- WABPQHHGFIMREM-BJUDXGSMSA-N lead-206 Chemical compound [206Pb] WABPQHHGFIMREM-BJUDXGSMSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 239000012815 thermoplastic material Substances 0.000 description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020314 ClBr Inorganic materials 0.000 description 1
- 235000004035 Cryptotaenia japonica Nutrition 0.000 description 1
- 244000146493 Cryptotaenia japonica Species 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 101000693961 Trachemys scripta 68 kDa serum albumin Proteins 0.000 description 1
- MDPBAVVOGPXYKN-UHFFFAOYSA-N [Y].[Gd] Chemical compound [Y].[Gd] MDPBAVVOGPXYKN-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229920003233 aromatic nylon Polymers 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7701—Chalogenides
- C09K11/7702—Chalogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7701—Chalogenides
- C09K11/7703—Chalogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/773—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3895—Non-oxides with a defined oxygen content, e.g. SiOC, TiON
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
- C04B2235/764—Garnet structure A3B2(CO4)3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01037—Rubidium [Rb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
< 도면의 주요부분에 대한 부호의 설명 >
10, 101, 202: 발광 소자 11, 108: 형광체
12: 코팅 부재 200, 300, 400: 발광 다이오드
301: 제 1 오목부 302, 304: LED 칩
303, 306: 형광체층 305: 제 2 오목부
308: 패키지
Claims (170)
- 일반식 LXMYN((2/3)X+(4/3)Y):R 또는 LXMYOZN((2/3)X+(4/3)Y-(2/3)Z):R(L은 Ca, Sr로 이루어지는 제 II족 원소 중에서 선택되는 적어도 1종 이상, M은 C, Si, Ge 중 Si를 필수로 하는 제 IV족 원소 중에서 선택되는 적어도 1종 이상, R은 Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Lu 중 Eu를 필수로 하는 희토류 원소 중에서 선택되는 적어도 1종 이상이고, X, Y, Z는 0.5≤X≤3, 1.5≤Y≤8, 0<Z≤3의 범위이다)로 표현되고,피크 파장이 500㎚ 이하인 제 1 발광 스펙트럼을 갖는 광의 적어도 일부를 흡수하여, 520 내지 780㎚의 범위에 적어도 1 이상의 피크를 가진 제 2 발광 스펙트럼을 갖는 광을 발광하는 질화물 형광체로서,Li, Na, K, Rb, Cs로 이루어지는 제 I족 원소 중에서 선택되는 적어도 1종 이상의 원소를 추가로 포함하는 것을 특징으로 하는 질화물 형광체.
- 제 1 항에 있어서, 상기 질화물 형광체는 환원 분위기 중에서 소성되는 것을 특징으로 하는 질화물 형광체.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 500㎚ 이하에 피크 파장이 있는 제 1 발광 스펙트럼을 갖는 광을 발광하는 발광 소자와,상기 제 1 발광 스펙트럼을 갖는 광 중 적어도 일부를 흡수하여, 520 내지 780㎚의 파장 범위에 적어도 1 이상의 피크 파장이 있는 제 2 발광 스펙트럼을 갖는 광을 발광하는 형광체를 적어도 갖는 발광 장치로서,상기 형광체는 제 1 항에 기재된 질화물 형광체가 사용되는 것을 특징으로 하는 발광 장치.
- 제 11 항에 있어서, 상기 발광 장치는 추가로 상기 제 1 발광 스펙트럼을 갖는 광 및 상기 제 2 발광 스펙트럼을 갖는 광의 적어도 일부를 흡수하여, 청색 영역으로부터, 녹색 영역, 황색 영역, 적색 영역까지 적어도 1 이상의 피크 파장이 있는 제 3 발광 스펙트럼을 갖는 광을 발광하는 형광체를 1 이상 갖고 있는 것을 특징으로 하는 발광 장치.
- 제 12 항에 있어서, 상기 제 3 발광 스펙트럼의 광을 발광하는 형광체는 적어도 세륨으로 활성화된 이트륨ㆍ알루미늄 산화물 형광체, 적어도 세륨으로 활성화된 이트륨ㆍ가돌리늄ㆍ알루미늄 산화물 형광체 및 적어도 세륨으로 활성화된 이트륨ㆍ갈륨ㆍ알루미늄 산화물 형광체 중 적어도 하나 이상인 것을 특징으로 하는 발광 장치.
- 제 12 항에 있어서, 상기 발광장치는 상기 발광 소자의 광의 일부와, 상기 제 2 발광 스펙트럼을 갖는 형광체의 광의 일부와, 상기 제 3 발광 스펙트럼을 갖는 형광체의 광의 일부 중 2 이상의 광의 혼색에 의해, 백색으로 발광하는 것을 특징으로 하는 발광 장치.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (19)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00080879 | 2002-03-22 | ||
JP2002080879A JP4009828B2 (ja) | 2002-03-22 | 2002-03-22 | 窒化物蛍光体及びその製造方法 |
JP2002126566A JP2003321675A (ja) | 2002-04-26 | 2002-04-26 | 窒化物蛍光体及びその製造方法 |
JPJP-P-2002-00126566 | 2002-04-26 | ||
JPJP-P-2002-00148555 | 2002-05-23 | ||
JP2002148555A JP4221950B2 (ja) | 2002-05-23 | 2002-05-23 | 蛍光体 |
JPJP-P-2002-00167166 | 2002-06-07 | ||
JP2002167166A JP4868685B2 (ja) | 2002-06-07 | 2002-06-07 | 蛍光体 |
JP2002187647 | 2002-06-27 | ||
JPJP-P-2002-00187647 | 2002-06-27 | ||
JPJP-P-2002-00226855 | 2002-08-05 | ||
JP2002226855A JP4280038B2 (ja) | 2002-08-05 | 2002-08-05 | 発光装置 |
JP2002348386A JP4214768B2 (ja) | 2002-11-29 | 2002-11-29 | 窒化物蛍光体及びそれを用いた発光装置 |
JP2002348387A JP4218328B2 (ja) | 2002-11-29 | 2002-11-29 | 窒化物蛍光体及びそれを用いた発光装置 |
JPJP-P-2002-00348387 | 2002-11-29 | ||
JPJP-P-2002-00348386 | 2002-11-29 | ||
JP2002351634 | 2002-12-03 | ||
JPJP-P-2002-00351634 | 2002-12-03 | ||
PCT/JP2003/003418 WO2003080764A1 (fr) | 2002-03-22 | 2003-03-20 | Phosphore de nitrure, procede de preparation de phosphore de nitrure et diode electroluminescente |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097013179A Division KR100983193B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013180A Division KR100961342B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013178A Division KR100961322B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040093374A KR20040093374A (ko) | 2004-11-05 |
KR100961324B1 true KR100961324B1 (ko) | 2010-06-04 |
Family
ID=28458108
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037015150A KR100961324B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013180A KR100961342B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013179A KR100983193B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013178A KR100961322B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097013180A KR100961342B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013179A KR100983193B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
KR1020097013178A KR100961322B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
Country Status (9)
Country | Link |
---|---|
US (7) | US7258816B2 (ko) |
EP (1) | EP1433831B1 (ko) |
KR (4) | KR100961324B1 (ko) |
CN (1) | CN100430456C (ko) |
AU (1) | AU2003221442A1 (ko) |
CA (1) | CA2447288C (ko) |
SG (3) | SG155768A1 (ko) |
TW (1) | TWI258499B (ko) |
WO (1) | WO2003080764A1 (ko) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150102658A (ko) | 2014-02-28 | 2015-09-07 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
EP2988340A1 (en) | 2014-08-18 | 2016-02-24 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
KR20160021491A (ko) | 2014-08-18 | 2016-02-26 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20160025438A (ko) | 2014-08-27 | 2016-03-08 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
KR20160026159A (ko) | 2014-08-29 | 2016-03-09 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20160041469A (ko) | 2014-10-07 | 2016-04-18 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20210031874A (ko) | 2021-03-03 | 2021-03-23 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
Families Citing this family (301)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003221442A1 (en) * | 2002-03-22 | 2003-10-08 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
CN100552997C (zh) | 2002-08-01 | 2009-10-21 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
US7824937B2 (en) * | 2003-03-10 | 2010-11-02 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
US7368179B2 (en) | 2003-04-21 | 2008-05-06 | Sarnoff Corporation | Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors |
KR100691143B1 (ko) * | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
CA2523544A1 (en) * | 2003-04-30 | 2004-11-18 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US20050041433A1 (en) * | 2003-08-18 | 2005-02-24 | Visteon Global Technologies, Inc. | Automotive lighting system |
US7965031B2 (en) * | 2003-09-24 | 2011-06-21 | Osram Gesellschaft mit beschränkter Haftung | White-emitting LED having a defined color temperature |
KR101131648B1 (ko) * | 2003-09-24 | 2012-03-28 | 오스람 옵토 세미컨덕터스 게엠베하 | 연색성이 개선된 led-기반 고효율 조명 시스템 |
EP1691425B1 (en) | 2003-11-25 | 2010-08-11 | Panasonic Electric Works Co., Ltd. | Light emitting device using light emitting diode chip |
JP3837588B2 (ja) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3931239B2 (ja) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
DE602005023414D1 (de) * | 2004-02-20 | 2010-10-21 | Lumination Llc | Regeln für effiziente lichtquellen mit mittels leuchtstoff konvertierten leds |
JP2005286312A (ja) * | 2004-03-02 | 2005-10-13 | Fujikura Ltd | 発光デバイス及び照明装置 |
US7592192B2 (en) * | 2004-03-05 | 2009-09-22 | Konica Minolta Holdings, Inc. | White light emitting diode (white LED) and method of manufacturing white LED |
US20070194693A1 (en) * | 2004-03-26 | 2007-08-23 | Hajime Saito | Light-Emitting Device |
US7830472B2 (en) * | 2004-04-26 | 2010-11-09 | Mitsubishi Chemical Corporation | Blue color composition for color filter, color filter, and color image display device |
US7391060B2 (en) | 2004-04-27 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR100665299B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
US8318044B2 (en) | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US20060017041A1 (en) * | 2004-06-25 | 2006-01-26 | Sarnoff Corporation | Nitride phosphors and devices |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
EP1769050B1 (en) | 2004-07-06 | 2013-01-16 | Lightscape Materials Inc. | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
US20070045777A1 (en) * | 2004-07-08 | 2007-03-01 | Jennifer Gillies | Micronized semiconductor nanocrystal complexes and methods of making and using same |
JP4521227B2 (ja) * | 2004-07-14 | 2010-08-11 | 株式会社東芝 | 窒素を含有する蛍光体の製造方法 |
EP1835008B1 (en) * | 2004-08-11 | 2019-05-01 | National Institute for Materials Science | Lighting instrument |
US20060049414A1 (en) * | 2004-08-19 | 2006-03-09 | Chandran Ramachandran G | Novel oxynitride phosphors |
DE112005001982T5 (de) * | 2004-08-31 | 2007-08-02 | Sumitomo Chemical Co., Ltd. | Fluoreszierende Substanz |
JP5081370B2 (ja) * | 2004-08-31 | 2012-11-28 | 日亜化学工業株式会社 | 発光装置 |
JP4659414B2 (ja) * | 2004-09-01 | 2011-03-30 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 発光ダイオード及びそれを用いる発光制御システム |
EP2360225B1 (en) * | 2004-09-22 | 2013-06-26 | National Institute for Materials Science | Phosphor, production method thereof and light emitting instrument |
TWI256149B (en) * | 2004-09-27 | 2006-06-01 | Advanced Optoelectronic Tech | Light apparatus having adjustable color light and manufacturing method thereof |
KR100845493B1 (ko) * | 2004-09-29 | 2008-07-10 | 쇼와 덴코 가부시키가이샤 | 산질화물계 형광체 및 이것의 제조방법 |
US8278816B2 (en) * | 2004-09-30 | 2012-10-02 | Global Tungsten & Powders Corp. | High CRI electroluminescent lamp |
US7749405B2 (en) * | 2004-09-30 | 2010-07-06 | Global Tungsten & Powders Corp. | White-emitting phosphor blend and electroluminescent lamp containing same |
US7452483B2 (en) * | 2004-09-30 | 2008-11-18 | Global Tungsten & Powders Corp. | Yellow-emitting phosphor blend for electroluminescent lamps |
KR20060034055A (ko) * | 2004-10-18 | 2006-04-21 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 발광소자 |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7671529B2 (en) * | 2004-12-10 | 2010-03-02 | Philips Lumileds Lighting Company, Llc | Phosphor converted light emitting device |
US7433115B2 (en) | 2004-12-15 | 2008-10-07 | Nichia Corporation | Light emitting device |
EP1837386B1 (en) * | 2004-12-28 | 2016-11-23 | Nichia Corporation | Nitride phosphor, method for producing same and light-emitting device using nitride phosphor |
JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
US20060171152A1 (en) * | 2005-01-20 | 2006-08-03 | Toyoda Gosei Co., Ltd. | Light emitting device and method of making the same |
CN101982891A (zh) * | 2005-02-28 | 2011-03-02 | 电气化学工业株式会社 | 荧光体及其制造方法及使用了该荧光体的发光元件 |
US7439668B2 (en) * | 2005-03-01 | 2008-10-21 | Lumination Llc | Oxynitride phosphors for use in lighting applications having improved color quality |
US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
JP2006278980A (ja) * | 2005-03-30 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体発光装置 |
CN104759615A (zh) | 2005-04-01 | 2015-07-08 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
US20060255712A1 (en) * | 2005-04-19 | 2006-11-16 | Masatsugu Masuda | Light emitting apparatus, liquid crystal display apparatus and lighting apparatus |
CN101175835B (zh) * | 2005-05-24 | 2012-10-10 | 三菱化学株式会社 | 荧光体及其应用 |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
KR101194129B1 (ko) * | 2005-06-15 | 2012-10-24 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP4640248B2 (ja) * | 2005-07-25 | 2011-03-02 | 豊田合成株式会社 | 光源装置 |
US7329907B2 (en) * | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
EP1928977B1 (en) * | 2005-08-24 | 2016-08-17 | New STS Limited | Luminescent material compositions and structures incorporating the same |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP5118823B2 (ja) * | 2005-09-14 | 2013-01-16 | 東北リコー株式会社 | インク定着方法、インク定着装置及び印刷装置 |
KR100724591B1 (ko) * | 2005-09-30 | 2007-06-04 | 서울반도체 주식회사 | 발광 소자 및 이를 포함한 led 백라이트 |
US7952108B2 (en) * | 2005-10-18 | 2011-05-31 | Finisar Corporation | Reducing thermal expansion effects in semiconductor packages |
TWI266441B (en) * | 2005-10-26 | 2006-11-11 | Lustrous Technology Ltd | COB-typed LED package with phosphor |
KR101258397B1 (ko) * | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | 구리 알칼리토 실리케이트 혼성 결정 형광체 |
EP1793261B1 (en) * | 2005-12-01 | 2009-08-12 | C.R.F. Societa Consortile per Azioni | Transparent display based on photoluminescent material |
US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
JP4828248B2 (ja) * | 2006-02-16 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
KR100828891B1 (ko) * | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
EP1990396A4 (en) * | 2006-02-28 | 2011-05-11 | Mitsubishi Chem Corp | PHOSPHOROLE MATERIAL AND METHOD FOR PRODUCING AN ALLOY FOR PHOSPHOROUS RAW MATERIAL |
US7731377B2 (en) | 2006-03-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Backlight device and display device |
JP5032043B2 (ja) * | 2006-03-27 | 2012-09-26 | 豊田合成株式会社 | フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置 |
KR100875443B1 (ko) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
CN102437152A (zh) * | 2006-04-24 | 2012-05-02 | 克利公司 | 侧视表面安装式白光led |
JP2007305785A (ja) * | 2006-05-11 | 2007-11-22 | Nichia Chem Ind Ltd | 発光装置 |
JP2007308537A (ja) * | 2006-05-16 | 2007-11-29 | Sony Corp | 発光組成物、光源装置、及び表示装置 |
CN101448914B (zh) * | 2006-05-19 | 2012-10-03 | 三菱化学株式会社 | 含氮合金以及使用该含氮合金的荧光体制造方法 |
CN101077973B (zh) * | 2006-05-26 | 2010-09-29 | 大连路明发光科技股份有限公司 | 硅酸盐荧光材料及其制造方法以及使用其的发光装置 |
WO2007148303A2 (en) * | 2006-06-22 | 2007-12-27 | Koninklijke Philips Electronics N.V. | Low-pressure gas discharge lamp |
JP5090802B2 (ja) * | 2006-06-28 | 2012-12-05 | ソウル セミコンダクター カンパニー リミテッド | 蛍光体及びその製造方法並びに発光ダイオード |
US7837455B2 (en) * | 2006-07-28 | 2010-11-23 | Ethicon, Inc. | Apparatus and method for making suture packages |
US7820075B2 (en) | 2006-08-10 | 2010-10-26 | Intematix Corporation | Phosphor composition with self-adjusting chromaticity |
ES2391586T3 (es) | 2006-08-15 | 2012-11-28 | Dalian Luminglight Co., Ltd. | Materiales luminiscentes basados en silicato que tienen múltiples picos de emisión, procedimientos para su preparación y uso de los mismos en dispositivos de emisión de luz |
KR101258227B1 (ko) * | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
US20080054793A1 (en) * | 2006-08-30 | 2008-03-06 | Everlight Electronics Co., Ltd. | White light-emitting apparatus |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
CN101145593A (zh) * | 2006-09-14 | 2008-03-19 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管及其制备方法 |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
KR101241528B1 (ko) * | 2006-09-25 | 2013-03-08 | 엘지이노텍 주식회사 | 발광 장치 |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
CN101605867B (zh) | 2006-10-03 | 2013-05-08 | 渲染材料公司 | 金属硅酸盐卤化物磷光体以及使用它们的led照明器件 |
JP2008135725A (ja) * | 2006-10-31 | 2008-06-12 | Toshiba Corp | 半導体発光装置 |
DE102006051756A1 (de) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Lichtquelle |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
KR100946015B1 (ko) * | 2007-01-02 | 2010-03-09 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 lcd 백라이트용 광원모듈 |
US10023796B2 (en) * | 2007-02-07 | 2018-07-17 | Lumileds Llc | Illumination system comprising composite monolithic ceramic luminescence converter |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
DE102007009351A1 (de) * | 2007-02-23 | 2008-08-28 | Noctron Holding S.A. | Leuchtmittel |
DE102007010719A1 (de) * | 2007-03-06 | 2008-09-11 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten Granaten für pcLEDs |
KR20090124906A (ko) * | 2007-03-12 | 2009-12-03 | 니치아 카가쿠 고교 가부시키가이샤 | 고출력 발광 장치 및 그것에 이용하는 패키지 |
JP4970095B2 (ja) * | 2007-03-19 | 2012-07-04 | 富士フイルム株式会社 | 照明装置及びその発光方法、並びに撮影装置 |
JP5089212B2 (ja) * | 2007-03-23 | 2012-12-05 | シャープ株式会社 | 発光装置およびそれを用いたledランプ、発光装置の製造方法 |
US20080246185A1 (en) * | 2007-04-04 | 2008-10-09 | Bily Wang | Composition of led frame body and manufacturing method thereof |
CN101663372B (zh) | 2007-04-18 | 2014-05-28 | 三菱化学株式会社 | 荧光体及其制造方法、含荧光体组合物、发光装置、照明装置、图像显示装置以及含氮化合物 |
JP4903179B2 (ja) * | 2007-04-23 | 2012-03-28 | サムソン エルイーディー カンパニーリミテッド. | 発光装置及びその製造方法 |
US8232563B2 (en) * | 2007-06-14 | 2012-07-31 | Epistar Corporation | Light-emitting device |
KR101273083B1 (ko) | 2007-06-21 | 2013-06-10 | 엘지이노텍 주식회사 | 발광장치 |
CN101157854B (zh) | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
TWI347687B (en) * | 2007-07-13 | 2011-08-21 | Lite On Technology Corp | Light-emitting device with open-loop control |
WO2009017117A1 (ja) * | 2007-07-30 | 2009-02-05 | Sharp Kabushiki Kaisha | 発光装置、照明装置及び照明装置を備えたクリーンルーム |
KR20090019677A (ko) * | 2007-08-21 | 2009-02-25 | 삼성전기주식회사 | 옥시 나이트라이드 형광체, 이를 포함하는 백색 발광 소자및 형광체 제조 방법. |
RU2467051C2 (ru) | 2007-08-22 | 2012-11-20 | Сеул Семикондактор Ко., Лтд. | Люминофоры на основе нестехиометрических тетрагональных силикатов меди и щелочноземельного металла и способ их получения |
US20090050912A1 (en) * | 2007-08-24 | 2009-02-26 | Foxsemicon Integrated Technology, Inc. | Light emitting diode and outdoor illumination device having the same |
KR101055769B1 (ko) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
CN101378103A (zh) * | 2007-08-28 | 2009-03-04 | 富士迈半导体精密工业(上海)有限公司 | 白光发光装置及其制作方法 |
US8648523B2 (en) * | 2007-08-30 | 2014-02-11 | Nichia Corporation | Light emitting device including light emitting element and phosphor |
DE102007057710B4 (de) * | 2007-09-28 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Bauelement mit Konversionselement |
RU2470980C2 (ru) * | 2007-10-15 | 2012-12-27 | Лейхтштоффверк Брайтунген Гмбх | Легированный редкоземельным элементом люминофор на основе щелочноземельного элемента и нитрида кремния, способ его производства и преобразующее излучение устройство, содержащее такой люминофор |
TWI400787B (zh) * | 2007-11-13 | 2013-07-01 | Epistar Corp | 發光元件之封裝結構 |
US20120037886A1 (en) | 2007-11-13 | 2012-02-16 | Epistar Corporation | Light-emitting diode device |
KR100932978B1 (ko) * | 2007-11-28 | 2009-12-21 | 삼성에스디아이 주식회사 | 백색 형광체, 이를 이용하는 발광 장치, 및 이 발광 장치를백 라이트 유닛으로 사용하는 액정 표시 장치 |
US7810954B2 (en) * | 2007-12-03 | 2010-10-12 | Lumination Llc | LED-based changeable color light lamp |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
JP2011508001A (ja) * | 2007-12-19 | 2011-03-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 赤色発光SiAlONベース材料 |
KR100898288B1 (ko) | 2008-01-09 | 2009-05-18 | 삼성에스디아이 주식회사 | 백색 형광체, 이를 이용하는 발광 장치, 및 이 발광 장치를백 라이트 유닛으로 사용하는 액정 표시 장치 |
WO2009093427A1 (ja) * | 2008-01-21 | 2009-07-30 | Nichia Corporation | 発光装置 |
DE102008005936A1 (de) * | 2008-01-24 | 2009-07-30 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
WO2009101718A1 (ja) * | 2008-02-13 | 2009-08-20 | Canon Components, Inc. | 白色発光ダイオード、白色発光装置及びそれらを用いたライン状照明装置 |
US8567973B2 (en) * | 2008-03-07 | 2013-10-29 | Intematix Corporation | Multiple-chip excitation systems for white light emitting diodes (LEDs) |
CN102036999A (zh) * | 2008-03-21 | 2011-04-27 | 内诺格雷姆公司 | 金属硅氮化物或金属硅氧氮化物亚微米荧光粉颗粒及合成这些荧光粉的方法 |
KR100973238B1 (ko) * | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
JP5665160B2 (ja) * | 2008-03-26 | 2015-02-04 | パナソニックIpマネジメント株式会社 | 発光装置および照明器具 |
DE102009018603B9 (de) | 2008-04-25 | 2021-01-14 | Samsung Electronics Co., Ltd. | Leuchtvorrichtung und Herstellungsverfahren derselben |
US8274215B2 (en) * | 2008-12-15 | 2012-09-25 | Intematix Corporation | Nitride-based, red-emitting phosphors |
US8242525B2 (en) * | 2008-05-20 | 2012-08-14 | Lightscape Materials, Inc. | Silicate-based phosphors and LED lighting devices using the same |
KR100992778B1 (ko) | 2008-05-23 | 2010-11-05 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8212469B2 (en) | 2010-02-01 | 2012-07-03 | Abl Ip Holding Llc | Lamp using solid state source and doped semiconductor nanophosphor |
US8028537B2 (en) * | 2009-05-01 | 2011-10-04 | Abl Ip Holding Llc | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
US7845825B2 (en) * | 2009-12-02 | 2010-12-07 | Abl Ip Holding Llc | Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light |
US8021008B2 (en) * | 2008-05-27 | 2011-09-20 | Abl Ip Holding Llc | Solid state lighting using quantum dots in a liquid |
US8172424B2 (en) * | 2009-05-01 | 2012-05-08 | Abl Ip Holding Llc | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
US8262251B2 (en) * | 2009-05-01 | 2012-09-11 | Abl Ip Holding Llc | Light fixture using doped semiconductor nanophosphor in a gas |
US8344407B2 (en) * | 2008-05-30 | 2013-01-01 | Kabushiki Kaisha Toshiba | White light source, backlight, liquid crystal display apparatus, and illuminating apparatus |
JPWO2009144922A1 (ja) * | 2008-05-30 | 2011-10-06 | 株式会社東芝 | 白色ledおよびそれを用いたバックライトならびに液晶表示装置 |
TW201000806A (en) * | 2008-06-19 | 2010-01-01 | Lighthouse Technology Co Ltd | Light-emitting component and its forming mold |
TWI389344B (zh) * | 2008-08-25 | 2013-03-11 | Epistar Corp | 光電元件 |
JP5288967B2 (ja) * | 2008-09-22 | 2013-09-11 | ユー・ディー・シー アイルランド リミテッド | 発光素子及びその製造方法、並びに該発光素子を備えるディスプレイ |
WO2010055831A1 (ja) * | 2008-11-13 | 2010-05-20 | 国立大学法人名古屋大学 | 半導体発光装置 |
US8287759B2 (en) | 2009-05-15 | 2012-10-16 | Cree, Inc. | Luminescent particles, methods and light emitting devices including the same |
US9428688B2 (en) | 2008-11-17 | 2016-08-30 | Cree, Inc. | Phosphor composition |
US9464225B2 (en) * | 2008-11-17 | 2016-10-11 | Cree, Inc. | Luminescent particles, methods of identifying same and light emitting devices including the same |
TWI391471B (zh) * | 2008-11-21 | 2013-04-01 | Univ Nat Cheng Kung | Preparation method of nitride fluorescent powder |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
EP2202284B1 (en) * | 2008-12-23 | 2012-10-17 | Korea Institute of Energy Research | Nitride red phosphors and white light emitting diode using rare-earth-doped nitride red phosphors |
CN101781558B (zh) * | 2009-01-14 | 2013-03-20 | 北京有色金属研究总院 | 一种硅基氮化物红色荧光体及其制备方法 |
US8044420B2 (en) * | 2009-01-15 | 2011-10-25 | Advanced Semiconductor Engineering, Inc. | Light emitting diode package structure |
US7883910B2 (en) * | 2009-02-03 | 2011-02-08 | Industrial Technology Research Institute | Light emitting diode structure, LED packaging structure using the same and method of forming the same |
RU2515185C2 (ru) * | 2009-02-05 | 2014-05-10 | СиСиЭс ИНК. | Светодиодное светоизлучающее устройство |
KR100969146B1 (ko) * | 2009-02-18 | 2010-07-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102009010705A1 (de) | 2009-02-27 | 2010-09-02 | Merck Patent Gmbh | Co-dotierte 2-5-8 Nitride |
KR101047603B1 (ko) * | 2009-03-10 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US8610156B2 (en) | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
KR20100106053A (ko) * | 2009-03-23 | 2010-10-01 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 및 이들의 제조 방법 |
US8168998B2 (en) * | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
DE102009030205A1 (de) * | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
CN102473815B (zh) | 2009-07-02 | 2015-04-29 | 夏普株式会社 | 发光装置 |
DE102009037732A1 (de) | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-LED mit hoher Effizienz |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US20110090669A1 (en) * | 2009-10-20 | 2011-04-21 | Tsung-Ting Sun | Led lighting device and light source module for the same |
TWI374704B (en) | 2009-11-09 | 2012-10-21 | Ind Tech Res Inst | Light transformation particle and photobioreactor |
US7998526B2 (en) * | 2009-12-01 | 2011-08-16 | Bridgelux, Inc. | Method and system for dynamic in-situ phosphor mixing and jetting |
US20110127555A1 (en) * | 2009-12-02 | 2011-06-02 | Renaissance Lighting, Inc. | Solid state light emitter with phosphors dispersed in a liquid or gas for producing high cri white light |
US8217406B2 (en) * | 2009-12-02 | 2012-07-10 | Abl Ip Holding Llc | Solid state light emitter with pumped nanophosphors for producing high CRI white light |
US8118454B2 (en) * | 2009-12-02 | 2012-02-21 | Abl Ip Holding Llc | Solid state lighting system with optic providing occluded remote phosphor |
US9163802B2 (en) | 2009-12-02 | 2015-10-20 | Abl Ip Holding Llc | Lighting fixtures using solid state device and remote phosphors to produce white light |
JP5707697B2 (ja) * | 2009-12-17 | 2015-04-30 | 日亜化学工業株式会社 | 発光装置 |
DE102009055185A1 (de) | 2009-12-22 | 2011-06-30 | Osram Gesellschaft mit beschränkter Haftung, 81543 | Leuchtstoff und Lichtquelle mit derartigen Leuchtstoff |
US9719012B2 (en) * | 2010-02-01 | 2017-08-01 | Abl Ip Holding Llc | Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement |
US8517550B2 (en) | 2010-02-15 | 2013-08-27 | Abl Ip Holding Llc | Phosphor-centric control of color of light |
US8674392B2 (en) | 2010-02-26 | 2014-03-18 | Sharp Kabushiki Kaisha | Light-emitting device |
EP2545597A2 (en) * | 2010-03-06 | 2013-01-16 | Blackbrite APS | Led heat and photon extractor |
CN101798510A (zh) * | 2010-03-15 | 2010-08-11 | 彩虹集团公司 | 一种氮化物荧光粉材料及其制备方法 |
KR101774434B1 (ko) * | 2010-03-31 | 2017-09-04 | 오스람 실바니아 인코포레이티드 | 형광체 및 이를 함유한 led |
CN101831295A (zh) * | 2010-04-07 | 2010-09-15 | 江苏博睿光电有限公司 | 一种硅基氮化物红色荧光粉及其制备方法 |
WO2011142770A1 (en) * | 2010-05-14 | 2011-11-17 | Lightscape Materials, Inc. | Carbonitride based phosphors and light emitting devices using the same |
JP5632961B2 (ja) | 2010-05-14 | 2014-11-26 | ライトスケープ マテリアルズ インコーポレイテッド | オキシ炭窒化物蛍光体およびこれを使用する発光素子 |
DE102010021341A1 (de) * | 2010-05-22 | 2011-11-24 | Merck Patent Gmbh | Leuchtstoffe |
KR100984273B1 (ko) * | 2010-05-25 | 2010-10-01 | 충남대학교산학협력단 | 질화물 형광체, 이의 제조방법 및 상기 형광체를 포함하는 발광 소자 |
WO2011147088A1 (zh) * | 2010-05-27 | 2011-12-01 | 海洋王照明科技股份有限公司 | 含有金属粒子的稀土掺杂的卤氧化物发光材料及其制备方法 |
WO2012006289A1 (en) | 2010-07-09 | 2012-01-12 | Nitto Denko Corporation | Phosphor composition and light emitting device using the same |
US20120019126A1 (en) * | 2010-07-22 | 2012-01-26 | General Electric Company | Oxynitride phosphors, method of preparation, and light emitting instrument |
JP5783512B2 (ja) | 2010-07-26 | 2015-09-24 | シャープ株式会社 | 発光装置 |
US8835199B2 (en) * | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
US8198803B2 (en) | 2010-07-30 | 2012-06-12 | Everlight Electronics Co., Ltd. | Color-temperature-tunable device |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
US8733942B2 (en) * | 2010-08-09 | 2014-05-27 | Delta Electronics, Inc. | Illumination system and projector using the same |
SG187896A1 (en) * | 2010-09-10 | 2013-04-30 | Lightscape Materials Inc | Silicon carbidonitride based phosphors and lighting devices using the same |
TW201213506A (en) * | 2010-09-30 | 2012-04-01 | Chi Mei Corp | Phosphor and luminous device |
TWI393764B (zh) * | 2010-10-15 | 2013-04-21 | Chi Mei Corp | A phosphor and a light emitting device |
CN102986044B (zh) | 2010-10-15 | 2015-05-06 | 三菱化学株式会社 | 白色发光装置及照明器具 |
CN102082225A (zh) * | 2010-10-21 | 2011-06-01 | 罗维鸿 | 用于暖白光led及其荧光粉 |
JP2012114116A (ja) * | 2010-11-19 | 2012-06-14 | Olympus Corp | 発光装置 |
JP5071605B2 (ja) * | 2010-12-17 | 2012-11-14 | パナソニック株式会社 | Led装置、およびその製造方法 |
US20120161170A1 (en) * | 2010-12-27 | 2012-06-28 | GE Lighting Solutions, LLC | Generation of radiation conducive to plant growth using a combination of leds and phosphors |
JP2012153873A (ja) * | 2011-01-04 | 2012-08-16 | Sony Chemical & Information Device Corp | 赤色蛍光体、赤色蛍光体の製造方法、白色光源、照明装置、および液晶表示装置 |
JP5695968B2 (ja) * | 2010-12-28 | 2015-04-08 | デクセリアルズ株式会社 | 赤色蛍光体、赤色蛍光体の製造方法、白色光源、照明装置、および液晶表示装置 |
US20140022761A1 (en) * | 2011-01-21 | 2014-01-23 | Osram Sylvania Inc. | Luminescent Converter and LED Light Source Containing Same |
KR101411255B1 (ko) | 2011-01-28 | 2014-06-23 | 삼성디스플레이 주식회사 | 광원 모듈 및 이의 제조 방법 |
US8461752B2 (en) * | 2011-03-18 | 2013-06-11 | Abl Ip Holding Llc | White light lamp using semiconductor light emitter(s) and remotely deployed phosphor(s) |
US8803412B2 (en) * | 2011-03-18 | 2014-08-12 | Abl Ip Holding Llc | Semiconductor lamp |
KR101215300B1 (ko) * | 2011-03-29 | 2012-12-26 | 순천대학교 산학협력단 | 산질화물계 형광체 |
US8986842B2 (en) | 2011-05-24 | 2015-03-24 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
JP2012246462A (ja) | 2011-05-31 | 2012-12-13 | Sharp Corp | 発光装置 |
JP5373859B2 (ja) * | 2011-07-05 | 2013-12-18 | デクセリアルズ株式会社 | 照明装置 |
DE102011113498A1 (de) * | 2011-09-15 | 2013-03-21 | Osram Opto Semiconductors Gmbh | Leuchtstoffmischung, optoelektronisches Bauelement mit einer Leuchtstoffmischung und Straßenlaterne mit einer Leuchtstoffmischung |
KR101270080B1 (ko) | 2011-09-22 | 2013-05-31 | 홍혜원 | 고휘도 실리콘 화합물 형광체, 그 제조방법 및 상기 형광체를 포함하는 발광 소자 |
CN202371641U (zh) * | 2011-10-14 | 2012-08-08 | 郑榕彬 | 具有双层荧光粉的led灯 |
CN102399552B (zh) * | 2011-11-08 | 2014-07-30 | 杭州广陵科技开发有限公司 | 一种用于白光led的氮化物红色荧光粉及其制备方法 |
KR101863548B1 (ko) | 2011-11-23 | 2018-06-05 | 삼성전자주식회사 | 산질화물계 형광체 및 이를 포함하는 발광장치 |
KR101877423B1 (ko) * | 2011-11-28 | 2018-07-11 | 엘지이노텍 주식회사 | 산질화물 형광체 및 그를 포함한 발광소자 패키지 |
KR101883337B1 (ko) * | 2011-12-05 | 2018-07-30 | 엘지이노텍 주식회사 | 산질화물 형광체 및 그를 포함한 발광소자 패키지 |
US9017574B2 (en) | 2011-12-19 | 2015-04-28 | Lightscape Materials, Inc. | Carbidonitride phosphors and LED lighting devices using the same |
CN103184047B (zh) * | 2011-12-28 | 2016-03-16 | 北京华美亮材料科技有限公司 | 一组复合荧光材料及其制备方法 |
US8663502B2 (en) | 2011-12-30 | 2014-03-04 | Intematix Corporation | Red-emitting nitride-based phosphors |
KR101641378B1 (ko) | 2011-12-30 | 2016-07-20 | 인터매틱스 코포레이션 | 전하 평형을 위한 침입형 양이온을 갖는 질화물 인광체 |
CN104144902A (zh) | 2012-02-29 | 2014-11-12 | 沙特基础创新塑料Ip私人有限责任公司 | 用于生产低硫双酚a的方法、用于生产聚碳酸酯的方法以及由聚碳酸酯制作的制品 |
CN105206732B (zh) * | 2012-02-29 | 2018-11-09 | 沙特基础全球技术有限公司 | 塑料模制器件和发光器件 |
US9653656B2 (en) | 2012-03-16 | 2017-05-16 | Advanced Semiconductor Engineering, Inc. | LED packages and related methods |
US9938460B2 (en) | 2012-04-02 | 2018-04-10 | National Taiwan University | Phosphor, light emitting apparatus and method of forming phosphor |
TWI527880B (zh) * | 2012-04-02 | 2016-04-01 | 呂宗昕 | 螢光粉體及發光裝置 |
US8637887B2 (en) | 2012-05-08 | 2014-01-28 | Advanced Semiconductor Engineering, Inc. | Thermally enhanced semiconductor packages and related methods |
KR101362185B1 (ko) * | 2012-06-22 | 2014-02-12 | 순천대학교 산학협력단 | 형광체 및 이를 포함하는 발광장치 |
CN102766458B (zh) * | 2012-06-30 | 2013-10-16 | 江苏博睿光电有限公司 | 一种高亮度氮化物红色荧光粉及其制造方法 |
CN102760820B (zh) * | 2012-07-10 | 2015-05-20 | 江苏博睿光电有限公司 | 一种白光led光源 |
US8597545B1 (en) | 2012-07-18 | 2013-12-03 | Intematix Corporation | Red-emitting nitride-based calcium-stabilized phosphors |
KR101941450B1 (ko) * | 2012-08-02 | 2019-01-23 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
US8815121B2 (en) * | 2012-08-31 | 2014-08-26 | Lightscape Materials, Inc. | Halogenated oxycarbidonitride phosphor and devices using same |
JP6068914B2 (ja) * | 2012-10-09 | 2017-01-25 | デンカ株式会社 | 蛍光体の製造方法 |
KR101249444B1 (ko) * | 2012-10-25 | 2013-04-03 | 주식회사 포스포 | 토륨이 도핑된 가넷계 형광체 및 이를 이용한 발광장치 |
US9059379B2 (en) | 2012-10-29 | 2015-06-16 | Advanced Semiconductor Engineering, Inc. | Light-emitting semiconductor packages and related methods |
CN102899038A (zh) * | 2012-10-30 | 2013-01-30 | 江苏博睿光电有限公司 | 一种氮化物红色荧光粉及其制备方法 |
TWI470239B (zh) * | 2012-11-19 | 2015-01-21 | Wistron Corp | 絕緣狀態偵測系統、絕緣狀態偵測之方法及其螢光顯微鏡系統 |
TWI516572B (zh) | 2012-12-13 | 2016-01-11 | 財團法人工業技術研究院 | 螢光材料、及包含其之發光裝置 |
JP2014120731A (ja) * | 2012-12-19 | 2014-06-30 | Mitsubishi Electric Corp | 半導体装置 |
TWI494413B (zh) * | 2012-12-22 | 2015-08-01 | Chi Mei Corp | 螢光體與發光裝置 |
CN103943759B (zh) | 2013-01-21 | 2018-04-27 | 圣戈本陶瓷及塑料股份有限公司 | 包括发光含钆材料的物件及其形成工艺 |
US9618191B2 (en) | 2013-03-07 | 2017-04-11 | Advanced Semiconductor Engineering, Inc. | Light emitting package and LED bulb |
TWI464238B (zh) | 2013-03-27 | 2014-12-11 | Chi Mei Corp | 螢光體與發光裝置 |
CN105567234B (zh) | 2013-04-19 | 2017-12-22 | 四川新力光源股份有限公司 | 氮氧化物发光材料及其制备方法和应用、包含该氮氧化物的荧光粉以及由其制成的led光源 |
US9617471B2 (en) | 2013-04-25 | 2017-04-11 | National Institute Of Materials Science | Inorganic phosphor, manufacture thereof, light-emitting device, and image display utilizing inorganic phosphor |
WO2014186548A1 (en) | 2013-05-16 | 2014-11-20 | Sabic Innovative Plastics Ip B.V. | Branched polycarbonate compositions having conversion material chemistry and articles thereof |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
KR20150026364A (ko) * | 2013-09-02 | 2015-03-11 | 엘지전자 주식회사 | 질화 붕소계 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
JP6156213B2 (ja) | 2013-09-17 | 2017-07-05 | 豊田合成株式会社 | 発光装置及びその製造方法 |
CA2925738C (en) | 2013-10-08 | 2022-06-07 | Osram Opto Semiconductors Gmbh | Phosphor, method for producing a phosphor and use of a phosphor |
US20150138789A1 (en) * | 2013-11-21 | 2015-05-21 | Ford Global Technologies, Llc | Vehicle lighting system with photoluminescent structure |
TWI518170B (zh) * | 2013-12-26 | 2016-01-21 | 奇美實業股份有限公司 | 螢光粉體與發光裝置 |
CZ307024B6 (cs) * | 2014-05-05 | 2017-11-22 | Crytur, Spol.S R.O. | Světelný zdroj |
US9315725B2 (en) | 2014-08-28 | 2016-04-19 | Lightscape Materials, Inc. | Method of making EU2+ activated inorganic red phosphor |
US9200198B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic phosphor and light emitting devices comprising same |
US9200199B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic red phosphor and lighting devices comprising same |
KR102275147B1 (ko) * | 2014-09-12 | 2021-07-09 | 대주전자재료 주식회사 | 산질화물계 형광체 및 이를 이용한 발광 장치 |
JP6524624B2 (ja) * | 2014-09-19 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
KR102357584B1 (ko) | 2014-12-17 | 2022-02-04 | 삼성전자주식회사 | 질화물 형광체, 백색 발광장치, 디스플레이 장치 및 조명장치 |
JP6472728B2 (ja) * | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
KR102477353B1 (ko) * | 2015-08-06 | 2022-12-16 | 삼성전자주식회사 | 적색 형광체, 백색 발광장치 및 조명 장치 |
JP6296024B2 (ja) * | 2015-08-28 | 2018-03-20 | 日亜化学工業株式会社 | 半導体レーザ装置 |
JP2017088800A (ja) * | 2015-11-16 | 2017-05-25 | サムスン エレクトロニクス カンパニー リミテッド | 蛍光体およびその製造方法 |
US9882107B2 (en) * | 2016-01-12 | 2018-01-30 | Citizen Electronics Co., Ltd. | LED package with covered bonding wire |
CN106281322B (zh) * | 2016-08-12 | 2018-11-30 | 河北利福光电技术有限公司 | 一种高效稳定led氮化物红色荧光粉及其制备方法 |
CN106318394B (zh) * | 2016-08-12 | 2018-11-30 | 河北利福光电技术有限公司 | 一种高亮度的粒径均匀的氮化物红光荧光粉及其制备方法和应用 |
JP6669147B2 (ja) * | 2016-10-31 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置 |
CN106520120B (zh) * | 2016-11-08 | 2019-04-23 | 河北利福光电技术有限公司 | 一种led氮化物红色荧光粉及其制备方法 |
US10290779B2 (en) * | 2016-12-15 | 2019-05-14 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting element |
DE102017102619B4 (de) | 2017-02-09 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Einheit und LED-Modul |
CN109423285B (zh) * | 2017-08-31 | 2023-09-26 | 日亚化学工业株式会社 | 铝酸盐荧光体及发光装置 |
JP6720944B2 (ja) * | 2017-08-31 | 2020-07-08 | 日亜化学工業株式会社 | 窒化物蛍光体の製造方法、窒化物蛍光体及び発光装置 |
JP7120745B2 (ja) * | 2017-09-29 | 2022-08-17 | 日本特殊陶業株式会社 | 光波長変換装置及び光複合装置 |
CN111201304A (zh) | 2017-10-10 | 2020-05-26 | 电化株式会社 | 红色荧光体和发光装置 |
CN107739211B (zh) * | 2017-11-02 | 2020-08-04 | 赣州中蓝稀土新材料科技有限公司 | 一种黄绿色力致发光陶瓷材料及其制备方法 |
US10763414B2 (en) * | 2017-12-18 | 2020-09-01 | Rohm Co., Ltd. | Semiconductor light-emitting device |
CN108172591A (zh) * | 2018-01-05 | 2018-06-15 | 广东迅扬科技股份有限公司 | 一种Micro LED彩色显示阵列结构 |
US10236422B1 (en) * | 2018-05-17 | 2019-03-19 | Eie Materials, Inc. | Phosphors with narrow green emission |
WO2020054351A1 (ja) | 2018-09-12 | 2020-03-19 | デンカ株式会社 | 蛍光体及び発光装置 |
US11056615B2 (en) | 2018-09-28 | 2021-07-06 | Nichia Corporation | Method for manufacturing light emitting module with concave surface light guide plate |
US10788709B2 (en) * | 2018-10-30 | 2020-09-29 | Innolux Corporation | Lighting device |
TWI752295B (zh) * | 2019-01-25 | 2022-01-11 | 晶元光電股份有限公司 | 光電半導體裝置 |
EP3950884B1 (en) * | 2019-04-03 | 2022-08-24 | National Institute for Materials Science | Phosphor, method for producing same and light emitting element |
WO2020240986A1 (ja) * | 2019-05-27 | 2020-12-03 | 株式会社村田製作所 | 誘電体磁器組成物およびセラミックコンデンサ |
US11313671B2 (en) | 2019-05-28 | 2022-04-26 | Mitutoyo Corporation | Chromatic confocal range sensing system with enhanced spectrum light source configuration |
JP2021059641A (ja) | 2019-10-03 | 2021-04-15 | パナソニックIpマネジメント株式会社 | 赤色蛍光体およびそれを使用した発光装置 |
WO2021231932A1 (en) * | 2020-05-15 | 2021-11-18 | Lumileds Llc | Multi-color light source and methods of manufacture |
CN111933783A (zh) * | 2020-08-03 | 2020-11-13 | 长乐巧通工业设计有限公司 | 一种高精度的led设备的封装工艺 |
CN112573492B (zh) * | 2020-11-24 | 2024-04-26 | 兰州冉华实德新材料有限公司 | 一种锶铕氮化物固溶体粉末及其制备方法 |
KR102599818B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
KR102599819B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000204366A (ja) | 1999-01-08 | 2000-07-25 | Futaba Corp | 蛍光体の製造装置及び蛍光体製造用容器 |
JP2001144332A (ja) | 1999-11-12 | 2001-05-25 | Sharp Corp | Led駆動方法およびled装置ならびにledランプ、ledランプ駆動方法と表示装置 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2997446A (en) * | 1959-02-16 | 1961-08-22 | Adams Irving | Method of producing electroluminescent aluminum nitride |
US3036014A (en) * | 1961-09-20 | 1962-05-22 | Adams Irving | Red emitting electroluminescent aluminum nitride |
JPH07133485A (ja) | 1993-11-10 | 1995-05-23 | Toshiba Corp | 希土類燐酸塩蛍光体の製造方法 |
JP2790242B2 (ja) | 1994-10-07 | 1998-08-27 | 日亜化学工業株式会社 | 窒化物半導体発光ダイオード |
JP3470734B2 (ja) * | 1995-02-17 | 2003-11-25 | 岩崎電気株式会社 | 積層型発光ダイオード |
JP2947156B2 (ja) * | 1996-02-29 | 1999-09-13 | 双葉電子工業株式会社 | 蛍光体の製造方法 |
JPH09260722A (ja) | 1996-03-19 | 1997-10-03 | Daido Steel Co Ltd | 指向性可変型発光装置 |
DE19638667C2 (de) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JPH10112557A (ja) | 1996-10-08 | 1998-04-28 | Nichia Chem Ind Ltd | 発光装置及びそれを用いた表示装置 |
JP3565472B2 (ja) * | 1997-09-01 | 2004-09-15 | 信越化学工業株式会社 | イットリア/ガドリニア/ユーロピア共沈単分散球状粒子の製造方法及びそれにより得られるイットリア/ガドリニア/ユーロピア共沈単分散球状粒子 |
JPH11163419A (ja) | 1997-11-26 | 1999-06-18 | Rohm Co Ltd | 発光装置 |
JP3645422B2 (ja) * | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | 発光装置 |
JP3486345B2 (ja) | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
US5914501A (en) | 1998-08-27 | 1999-06-22 | Hewlett-Packard Company | Light emitting diode assembly having integrated electrostatic discharge protection |
JP2000212556A (ja) | 1998-11-19 | 2000-08-02 | Ohara Inc | 蓄光性蛍光体、及び蓄光性蛍光粉体、並びにそれらの製造方法 |
US6284156B1 (en) * | 1998-11-19 | 2001-09-04 | Kabushiki Kaisha Ohara | Long-lasting phosphor, powdered long-lasting phosphor and method for manufacturing the powdered long-lasting phosphor |
TW498102B (en) * | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
EP1471775B9 (de) * | 1999-07-23 | 2011-04-13 | OSRAM Opto Semiconductors GmbH | Lichtquelle mit einer Leuchtstoffanordnung und Vergussmasse mit einer Leuchtstoffanordnung |
JP3968920B2 (ja) | 1999-08-10 | 2007-08-29 | 双葉電子工業株式会社 | 蛍光体 |
JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
JP2001172625A (ja) | 1999-12-20 | 2001-06-26 | Toshiba Corp | 真空紫外線励起蛍光体およびそれを用いた発光装置 |
JP3763719B2 (ja) | 2000-02-02 | 2006-04-05 | 独立行政法人科学技術振興機構 | オキシ窒化物ガラスを母体材料とした蛍光体 |
JP3809760B2 (ja) | 2000-02-18 | 2006-08-16 | 日亜化学工業株式会社 | 発光ダイオード |
JP2002050800A (ja) | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
KR100784573B1 (ko) * | 2000-05-29 | 2007-12-10 | 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 | 발광다이오드에 기반을 둔 백색광을 방출하는 조명 기구 |
KR100382481B1 (ko) | 2000-06-09 | 2003-05-01 | 엘지전자 주식회사 | 백색 발광 다이오드 소자 및 그 제조 방법 |
JP4817534B2 (ja) * | 2000-06-09 | 2011-11-16 | 星和電機株式会社 | 発光ダイオードランプ |
JP2002080843A (ja) | 2000-06-30 | 2002-03-22 | Nichia Chem Ind Ltd | 真空紫外線励起発光蛍光体 |
JP2002031531A (ja) | 2000-07-17 | 2002-01-31 | Tamagawa Seiki Co Ltd | レートセンサ |
JP2002042525A (ja) | 2000-07-26 | 2002-02-08 | Toyoda Gosei Co Ltd | 面状光源 |
JP3589187B2 (ja) | 2000-07-31 | 2004-11-17 | 日亜化学工業株式会社 | 発光装置の形成方法 |
JP2002076434A (ja) | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
JP4619509B2 (ja) | 2000-09-28 | 2011-01-26 | 株式会社東芝 | 発光装置 |
JP2002176201A (ja) | 2000-12-05 | 2002-06-21 | Okaya Electric Ind Co Ltd | 半導体発光素子 |
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
WO2003065464A1 (fr) * | 2002-01-28 | 2003-08-07 | Nichia Corporation | Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation |
US6924514B2 (en) * | 2002-02-19 | 2005-08-02 | Nichia Corporation | Light-emitting device and process for producing thereof |
AU2003221442A1 (en) * | 2002-03-22 | 2003-10-08 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
JP2003321675A (ja) | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
JP4221950B2 (ja) * | 2002-05-23 | 2009-02-12 | 日亜化学工業株式会社 | 蛍光体 |
JP4263453B2 (ja) * | 2002-09-25 | 2009-05-13 | パナソニック株式会社 | 無機酸化物及びこれを用いた発光装置 |
TW200523340A (en) * | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
US7229573B2 (en) * | 2004-04-20 | 2007-06-12 | Gelcore, Llc | Ce3+ and Eu2+ doped phosphors for light generation |
US20060017041A1 (en) * | 2004-06-25 | 2006-01-26 | Sarnoff Corporation | Nitride phosphors and devices |
US7476338B2 (en) * | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
JP4009868B2 (ja) | 2004-10-27 | 2007-11-21 | 日亜化学工業株式会社 | 窒化物蛍光体及びそれを用いた発光装置 |
JP2005042125A (ja) | 2004-10-28 | 2005-02-17 | Nichia Chem Ind Ltd | 発光装置 |
JP4931372B2 (ja) | 2005-06-06 | 2012-05-16 | 日亜化学工業株式会社 | 発光装置 |
-
2003
- 2003-03-20 AU AU2003221442A patent/AU2003221442A1/en not_active Abandoned
- 2003-03-20 SG SG200600830-4A patent/SG155768A1/en unknown
- 2003-03-20 KR KR1020037015150A patent/KR100961324B1/ko active IP Right Grant
- 2003-03-20 US US10/478,598 patent/US7258816B2/en not_active Expired - Lifetime
- 2003-03-20 KR KR1020097013180A patent/KR100961342B1/ko active IP Right Grant
- 2003-03-20 SG SG2009037052A patent/SG173925A1/en unknown
- 2003-03-20 CA CA2447288A patent/CA2447288C/en not_active Expired - Lifetime
- 2003-03-20 WO PCT/JP2003/003418 patent/WO2003080764A1/ja active Application Filing
- 2003-03-20 KR KR1020097013179A patent/KR100983193B1/ko active IP Right Grant
- 2003-03-20 SG SG2009037094A patent/SG185827A1/en unknown
- 2003-03-20 CN CNB038004542A patent/CN100430456C/zh not_active Expired - Lifetime
- 2003-03-20 KR KR1020097013178A patent/KR100961322B1/ko active IP Right Grant
- 2003-03-20 EP EP03710450.2A patent/EP1433831B1/en not_active Expired - Lifetime
- 2003-03-21 TW TW092106347A patent/TWI258499B/zh not_active IP Right Cessation
-
2005
- 2005-10-18 US US11/252,111 patent/US7297293B2/en not_active Expired - Lifetime
-
2007
- 2007-10-03 US US11/905,720 patent/US7597823B2/en not_active Expired - Lifetime
- 2007-10-03 US US11/905,725 patent/US7556744B2/en not_active Expired - Lifetime
-
2009
- 2009-05-14 US US12/453,535 patent/US7964113B2/en not_active Expired - Fee Related
- 2009-05-14 US US12/453,534 patent/US8058793B2/en not_active Expired - Fee Related
- 2009-05-15 US US12/453,587 patent/US8076847B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000204366A (ja) | 1999-01-08 | 2000-07-25 | Futaba Corp | 蛍光体の製造装置及び蛍光体製造用容器 |
JP2001144332A (ja) | 1999-11-12 | 2001-05-25 | Sharp Corp | Led駆動方法およびled装置ならびにledランプ、ledランプ駆動方法と表示装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150102658A (ko) | 2014-02-28 | 2015-09-07 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
US10510933B1 (en) | 2014-08-18 | 2019-12-17 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
KR20160021491A (ko) | 2014-08-18 | 2016-02-26 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
US9741907B2 (en) | 2014-08-18 | 2017-08-22 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
US10249801B2 (en) | 2014-08-18 | 2019-04-02 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
US10424697B2 (en) | 2014-08-18 | 2019-09-24 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
EP2988340A1 (en) | 2014-08-18 | 2016-02-24 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and manufacturing method thereof |
KR20160025438A (ko) | 2014-08-27 | 2016-03-08 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
KR20220129499A (ko) | 2014-08-27 | 2022-09-23 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20230154778A (ko) | 2014-08-27 | 2023-11-09 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20160026159A (ko) | 2014-08-29 | 2016-03-09 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20160041469A (ko) | 2014-10-07 | 2016-04-18 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR20210031874A (ko) | 2021-03-03 | 2021-03-23 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100961324B1 (ko) | 질화물 형광체와 그 제조 방법 및 발광 장치 | |
EP1571194B1 (en) | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor | |
KR101065522B1 (ko) | 발광 장치 | |
JP2004189997A (ja) | オキシ窒化物蛍光体を用いた発光装置 | |
JP4214768B2 (ja) | 窒化物蛍光体及びそれを用いた発光装置 | |
JP4218328B2 (ja) | 窒化物蛍光体及びそれを用いた発光装置 | |
JP4442101B2 (ja) | 酸窒化物蛍光体及びそれを用いた発光装置 | |
JP4466446B2 (ja) | オキシ窒化物蛍光体を用いた発光装置 | |
JP4215046B2 (ja) | 窒化物蛍光体及びそれを用いた発光装置 | |
JP4991027B2 (ja) | オキシ窒化物蛍光体及びそれを用いた発光装置 | |
JP4215045B2 (ja) | 窒化物蛍光体及びそれを用いた発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
A107 | Divisional application of patent | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130503 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140502 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160427 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170504 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180427 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190429 Year of fee payment: 10 |