SG155768A1 - Nitride phosphor and production process thereof, and light emitting device - Google Patents

Nitride phosphor and production process thereof, and light emitting device

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Publication number
SG155768A1
SG155768A1 SG200600830-4A SG2006008304A SG155768A1 SG 155768 A1 SG155768 A1 SG 155768A1 SG 2006008304 A SG2006008304 A SG 2006008304A SG 155768 A1 SG155768 A1 SG 155768A1
Authority
SG
Singapore
Prior art keywords
light emitting
emitting device
production process
nitride phosphor
phosphor
Prior art date
Application number
SG200600830-4A
Other languages
English (en)
Inventor
Hiroto Tamaki
Masatoshi Kameshima
Suguru Takashima
Motokazu Yamada
Takahiro Naitou
Kazuhiko Sakai
Yoshinori Murazaki
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002080879A external-priority patent/JP4009828B2/ja
Priority claimed from JP2002126566A external-priority patent/JP2003321675A/ja
Priority claimed from JP2002148555A external-priority patent/JP4221950B2/ja
Priority claimed from JP2002167166A external-priority patent/JP4868685B2/ja
Priority claimed from JP2002226855A external-priority patent/JP4280038B2/ja
Priority claimed from JP2002348387A external-priority patent/JP4218328B2/ja
Priority claimed from JP2002348386A external-priority patent/JP4214768B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of SG155768A1 publication Critical patent/SG155768A1/en

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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
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    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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SG200600830-4A 2002-03-22 2003-03-20 Nitride phosphor and production process thereof, and light emitting device SG155768A1 (en)

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JP2002080879A JP4009828B2 (ja) 2002-03-22 2002-03-22 窒化物蛍光体及びその製造方法
JP2002126566A JP2003321675A (ja) 2002-04-26 2002-04-26 窒化物蛍光体及びその製造方法
JP2002148555A JP4221950B2 (ja) 2002-05-23 2002-05-23 蛍光体
JP2002167166A JP4868685B2 (ja) 2002-06-07 2002-06-07 蛍光体
JP2002187647 2002-06-27
JP2002226855A JP4280038B2 (ja) 2002-08-05 2002-08-05 発光装置
JP2002348387A JP4218328B2 (ja) 2002-11-29 2002-11-29 窒化物蛍光体及びそれを用いた発光装置
JP2002348386A JP4214768B2 (ja) 2002-11-29 2002-11-29 窒化物蛍光体及びそれを用いた発光装置
JP2002351634 2002-12-03

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JP4457110B2 (ja) * 2003-09-24 2010-04-28 パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング 改善された演色性を有するｌｅｄをベースとする高効率の照明系
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JP2005286312A (ja) * 2004-03-02 2005-10-13 Fujikura Ltd 発光デバイス及び照明装置
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