JP6669147B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6669147B2 JP6669147B2 JP2017203604A JP2017203604A JP6669147B2 JP 6669147 B2 JP6669147 B2 JP 6669147B2 JP 2017203604 A JP2017203604 A JP 2017203604A JP 2017203604 A JP2017203604 A JP 2017203604A JP 6669147 B2 JP6669147 B2 JP 6669147B2
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- Prior art keywords
- phosphor
- light
- light emitting
- less
- emitting device
- Prior art date
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- 150000001342 alkaline earth metals Chemical class 0.000 description 9
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- 229910005793 GeO 2 Inorganic materials 0.000 description 1
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- 238000004876 x-ray fluorescence Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/732—Location after the connecting process
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Description
CasSrtEuuSivAlwNx (I)
式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。
本実施形態に係る発光装置は、400nm以上500nm以下の範囲に発光ピーク波長を有する発光素子と、630nm以上670nm以下の範囲に発光ピーク波長を有し、下記式(I)で表される組成を有する蛍光体を含む蛍光部材と、を備え、CIE1931における色度座標のx値が0.640以上である光を発する。
CasSrtEuuSivAlwNx (I)
式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。
発光素子10の発光ピーク波長は、400nm以上500nm以下の範囲内にあり、400nm以上460nm以下の範囲内にあることが好ましい。
蛍光部材50は、少なくとも蛍光体70を含み、必要に応じてその他の蛍光体、樹脂、光拡散材等を含むことができる。蛍光体70は、CaおよびSrを含むアルカリ土類金属と、Alと、Euとを組成に含むシリコンナイトライドを含み、630nm以上670nm以下の範囲に蛍光のピーク波長を有する窒化物蛍光体の少なくとも1種を含む。シリコンナイトライドの組成はSrの含有率がCaの含有率以上であることが好ましい。
CasSrtEuuSivAlwNx (I)
式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。
発光装置の製造に先立ち、蛍光体として下表に示す赤色発光の蛍光体1から5をそれぞれ準備し、以下に示す評価方法で評価した。
後述する方法により得られた蛍光体1から5について以下の発光特性を測定した。量子効率測定装置(大塚電子株式会社製、QE−2000)を用いて、波長450nmの励起光を各蛍光体に照射し、室温(25℃±5℃)における発光スペクトルを測定した。各蛍光体について、発光強度が最大となる波長を発光ピーク波長(nm)として求めた。結果を表1に示す。
後述する方法により得られた蛍光体1から5について、反射率および反射スペクトルを分光蛍光光度計F−4500(日立ハイテクノロジーズ社製)を用いて測定した。波長450nmにおけるCaHPO4を基準とした反射率(%)を表1に示す。また蛍光体1、2および4の反射スペクトルを、波長に対する、CaHPO4を基準とした反射率(%)として図2に示す。
後述する方法により得られた蛍光体1から5について、レーザー回折式粒度分布測定装置(MARVERN(マルバーン)社製、MASTER SIZER(マスターサイザー)3000)を用いて、小径側からの体積累積頻度が50%に達する体積平均粒径(Dm:メジアン径)を測定した。結果を表1に示す。
後述する方法により得られた蛍光体1から5について、ICP−AES装置(Perkin Elmer製)、イオンクロマトグラフィーシステム(DIONEX日本製)、及び酸素・窒素分析装置(HORIBA製)を用いて組成を分析し、Alを0.9又は1とした各構成元素のモル比を表2に示す。
なお、蛍光体1から3についてはフッ素原子が検出されなかったが、蛍光体4および5についてはフッ素原子がアルミニウムに対して6モル%以下の含有量で検出された。
上記式(I)で示される組成CasSrtEuuSivAlwNxにおいて、s=0.9925、t=0、u=0.0075、v=1.1、w=0.9を設計値とし、Ca3N2、SrNn(n=2/3相当)、AlN、Si3N4およびEu2O3を原料として用い、これらの原料を設計値になるようになるように、不活性雰囲気のグローブボックス内で計量、混合して原料混合物を得た。この際、xはそれぞれの陽イオンの設計値をもとにするとx=3となるように設定し、原料に含まれる酸素の影響は考慮から除外した。原料混合物をルツボに充填し、N2ガス雰囲気下、ガス圧0.92MPa(ゲージ圧)、1950℃で3時間、熱処理した。この蛍光体を蛍光体1とした。
得られた蛍光体1は、各構成元素のモル比が表2に示される化合物であることを確認した。また、蛍光体1の体積平均粒径は17.0μm、発光ピーク波長は652nmであり、450nmにおける反射率は16.1%であった。
上記式(I)で示される組成CasSrtEuuSivAlwNxにおいて、s=0.4、t=0.6、u=0.015、v=1、w=1を設計値とした。すなわち、Euのモル比およびSrのモル比を大きくして、本蛍光体の発光ピーク波長を蛍光体1の発光ピーク波長に近づける設定値とした。それ以外は、蛍光体1の場合と同様にして原料混合物を得た。温度を2000℃、熱処理の時間を1時間としたこと以外は蛍光体1の場合と同様に熱処理して蛍光体2を製造した。
得られた蛍光体2は、各構成元素のモル比が表2に示される化合物であることを確認した。また、蛍光体2の体積平均粒径は18.6μm、発光ピーク波長は649nmであり、450nmにおける反射率は6.8%であった。また、蛍光体1の発光強度を100%とした蛍光体2の相対発光強度は95.6%であった。
上記式(I)で示される組成CasSrtEuuSivAlwNxにおいて、s=0.35、t=0.65、u=0.02、v=1、w=1を設計値とした。すなわち、蛍光体2よりもEuのモル比およびSrのモル比を大きくして、本蛍光体の発光ピーク波長を蛍光体1の発光ピーク波長に近づける設定値とした。それ以外は、蛍光体1の場合と同様にして原料混合物を得た。原料混合物を蛍光体2の場合と同様に熱処理して蛍光体3を製造した。
蛍光体3の体積平均粒径は18.2μm、発光ピーク波長は651nmであり、450nmにおける反射率は5.7%であった。また、蛍光体1の発光強度を100%とした蛍光体3の相対発光強度は93.0%であった。
原料混合物の組成を蛍光体2と同じ設計値とし、Ca源であるCa3N2の7重量%分をCaF2に変更し、Eu源のEu2O3をEuNに変更したこと以外は、蛍光体2の場合と同様にして原料混合物を得た。原料混合物を蛍光体2の場合と同様に熱処理して蛍光体4を製造した。
蛍光体4の体積平均粒径は17.1μm、発光ピーク波長は649nmであり、450nmにおける反射率は6.8%であった。また、蛍光体1の発光強度を100%とした蛍光体4の相対発光強度は104.2%であった。
原料混合物の組成を蛍光体3と同じ設計値とし、Ca源であるCa3N2の8重量%分をCaF2に変更し、Eu源のEu2O3をEuNに変更したこと以外は、蛍光体3の場合と同様にして原料混合物を得た。原料混合物を蛍光体2の場合と同様に熱処理して蛍光体5を製造した。
蛍光体5の体積平均粒径は17.3μm、発光ピーク波長は651nmであり、450nmにおける反射率は6.1%であった。また、蛍光体1の発光強度を100%とした蛍光体5の相対発光強度は102.7%であった。
発光装置の作製
発光波長454nmの青色発光LED(発光素子)に、表3に示す蛍光体を組み合わせて、以下の様にして発光装置を作製した。
発光装置が発する光の色度座標がx=0.675、y=0.315付近となるように、蛍光体をシリコーン樹脂に添加し、混合分散した後、更に脱泡することにより蛍光体含有樹脂組成物を得た。次にこの蛍光体含有樹脂組成物を発光素子の上に注入、充填した。次いで加熱することで樹脂組成物を硬化させた。このような工程により発光装置をそれぞれ作製した。
Claims (11)
- 400nm以上500nm以下の範囲内に発光ピーク波長を有する発光素子と、
630nm以上670nm以下の範囲内に発光ピーク波長を有し、下記式(I)で表される組成を有する蛍光体及び樹脂を含む蛍光部材と、を備え、
前記蛍光体は、波長450nmの光に対する反射率が10%以下で、比重が3.3g/cm 3 以上4.3g/cm 3 以下であり、
前記蛍光部材は、前記樹脂に対する前記蛍光体の含有率が50重量%以上75重量%以下であり、
CIE1931における色度座標のx値が0.640以上である光を発し、
前記発光素子の発光ピーク波長における発光強度が、発光スペクトルの最大発光強度に対して2%以下である発光スペクトルを有する発光装置。
CasSrtEuuSivAlwNx (I)
(式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。) - 400nm以上500nm以下の範囲内に発光ピーク波長を有する発光素子と、
630nm以上670nm以下の範囲内に発光ピーク波長を有し、下記式(I)で表される組成を有する蛍光体及び樹脂を含む蛍光部材と、を備え、
前記蛍光体は、波長450nmの光に対する反射率が10%以下で、比重が3.3g/cm 3 以上4.3g/cm 3 以下であり、
前記蛍光部材は、前記樹脂に対する前記蛍光体の含有率が50重量%以上75重量%以下であり、
CIE1931の色度図において色度座標(x,y)が、(0.500,0.280)、(0.540,0.340)、(0.625,0.375)、(0.735,0.262)及び(0.600,0.200)である各点をこの順に直線で連結して囲まれる色度範囲内に含まれる光を発し、
前記発光素子の発光ピーク波長における発光強度が、発光スペクトルの最大発光強度に対して2%以下である発光スペクトルを有する発光装置。
CasSrtEuuSivAlwNx (I)
(式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。) - 400nm以上500nm以下の範囲内に発光ピーク波長を有する発光素子と、
630nm以上670nm以下の範囲内に発光ピーク波長を有し、下記式(I)で表される組成を有する蛍光体及び樹脂を含む蛍光部材と、を備え、
前記蛍光体は、波長450nmの光に対する反射率が10%以下で、比重が3.3g/cm 3 以上4.3g/cm 3 以下であり、
前記蛍光部材は、前記樹脂に対する前記蛍光体の含有率が50重量%以上75重量%以下であり、
CIE1931の色度図において色度座標(x,y)が、(0.500,0.280)、(0.540,0.340)、(0.625,0.375)、(0.735,0.262)及び(0.650,0.220)である各点をこの順に直線で連結して囲まれる色度範囲内に含まれる光を発し、
前記発光素子の発光ピーク波長における発光強度が、発光スペクトルの最大発光強度に対して2%以下である発光スペクトルを有する発光装置。
CasSrtEuuSivAlwNx (I)
(式(I)中、s、t、u、v、wおよびxは、0.25≦s≦0.5、0.4≦t≦0.75、0.01≦u≦0.04、0.8≦s+t+u≦1.1、0.8≦v≦1.2、0.8≦w≦1.2、1.8≦v+w≦2.2、2.5≦x≦3.2を満たす。) - 前記蛍光部材は、前記樹脂に対する前記蛍光体の含有率が55重量%以上72重量%以下である請求項1から3のいずれか1項に記載の発光装置。
- 前記発光素子の発光ピーク波長における発光強度が、最大発光強度に対して0.2%以上2%以下である発光スペクトルを有する請求項1から4のいずれか1項に記載の発光装置。
- 前記式(I)において、tがwに対して0.45以上0.6以下である請求項1から5のいずれか1項に記載の発光装置。
- 前記蛍光体の体積平均粒径が、5μm以上50μm以下である請求項1から6のいずれか1項に記載の発光装置。
- 前記蛍光部材は、樹脂を含み、前記発光素子の直上において前記蛍光体を含む層の厚みが180μm以下である請求項1から7のいずれか1項に記載の発光装置。
- 前記蛍光部材は、樹脂を更に含み、前記蛍光体を含み、前記発光素子に近接する第一層と、前記第一層上に形成され、前記蛍光体を含まない第二層とを含み、
前記発光素子の直上において、前記蛍光部材の厚みに対する前記第一層の厚みの比率が75%以下である請求項1から8のいずれか1項に記載の発光装置。 - 発光スペクトルにおいて、前記蛍光体に由来する発光ピークの半値幅が、95nm以下である請求項1から9のいずれか1項に記載の発光装置。
- 前記蛍光体は、組成にフッ素原子を含み、その含有量がアルミニウムに対して1×10−3モル%以上6モル%以下である請求項1から10のいずれか1項に記載の発光装置。
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JP7428869B2 (ja) * | 2019-09-27 | 2024-02-07 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100961324B1 (ko) * | 2002-03-22 | 2010-06-04 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
JP3837588B2 (ja) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP4729278B2 (ja) * | 2004-08-30 | 2011-07-20 | Dowaエレクトロニクス株式会社 | 蛍光体及び発光装置 |
JP4104013B2 (ja) * | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
JP4557824B2 (ja) | 2005-07-04 | 2010-10-06 | 株式会社東芝 | 発光装置およびその製造方法 |
JP4992250B2 (ja) * | 2006-03-01 | 2012-08-08 | 日亜化学工業株式会社 | 発光装置 |
EP2246409B1 (en) * | 2008-01-21 | 2014-04-16 | Nichia Corporation | Light emitting apparatus |
US8274215B2 (en) | 2008-12-15 | 2012-09-25 | Intematix Corporation | Nitride-based, red-emitting phosphors |
US20090283721A1 (en) | 2008-05-19 | 2009-11-19 | Intematix Corporation | Nitride-based red phosphors |
CN102083941B (zh) * | 2008-07-02 | 2016-04-27 | 迪睿合电子材料有限公司 | 红色荧光体、制造红色荧光体的方法、白色光源、照明装置、及液晶显示装置 |
JP2010016292A (ja) * | 2008-07-07 | 2010-01-21 | Showa Denko Kk | 照明装置および照明装置の製造方法 |
CN102405538A (zh) * | 2009-08-26 | 2012-04-04 | 三菱化学株式会社 | 白色半导体发光装置 |
TWI393763B (zh) * | 2010-10-15 | 2013-04-21 | Chi Mei Corp | A phosphor and a light emitting device |
CN102443391B (zh) | 2010-09-30 | 2014-07-16 | 奇美实业股份有限公司 | 控制烧成的荧光体结构成分比例的方法、荧光体及发光装置 |
JP5864851B2 (ja) * | 2010-12-09 | 2016-02-17 | シャープ株式会社 | 発光装置 |
JP2012153873A (ja) * | 2011-01-04 | 2012-08-16 | Sony Chemical & Information Device Corp | 赤色蛍光体、赤色蛍光体の製造方法、白色光源、照明装置、および液晶表示装置 |
US9318669B2 (en) * | 2012-01-30 | 2016-04-19 | Cree, Inc. | Methods of determining and making red nitride compositions |
US20130292717A1 (en) * | 2012-05-04 | 2013-11-07 | Cree, Inc. | Light-emitting device with a tunable light emission spectrum |
WO2013175336A1 (en) * | 2012-05-22 | 2013-11-28 | Koninklijke Philips N.V. | New phosphors, such as new narrow-band red emitting phosphors, for solid state lighting |
CN103881706B (zh) * | 2012-12-21 | 2016-01-20 | 有研稀土新材料股份有限公司 | 一种氮氧化物荧光粉、其制备方法及含该荧光粉的发光装置 |
CN102994079A (zh) * | 2012-12-21 | 2013-03-27 | 北京有色金属研究总院 | 氮氧化物橙-红色荧光物质,包括其的发光膜或发光片及发光器件 |
JP6017665B2 (ja) | 2013-02-15 | 2016-11-02 | シャープ株式会社 | 植物栽培用led光源 |
JP6045470B2 (ja) * | 2013-03-04 | 2016-12-14 | 信越化学工業株式会社 | 赤色ランプ及び車両用灯火装置 |
JP6165248B2 (ja) * | 2013-06-18 | 2017-07-19 | シャープ株式会社 | 発光装置 |
JP2015088483A (ja) * | 2013-09-26 | 2015-05-07 | 信越化学工業株式会社 | 赤色ランプ及び車両用灯火装置 |
MY176434A (en) * | 2013-10-08 | 2020-08-08 | Osram Opto Semiconductors Gmbh | Phosphor, method for producing a phosphor and use of a phosphor |
JP6528418B2 (ja) * | 2014-01-29 | 2019-06-12 | 日亜化学工業株式会社 | 蛍光体及びこれを用いた発光装置 |
JP6287268B2 (ja) * | 2014-01-29 | 2018-03-07 | 日亜化学工業株式会社 | 発光装置 |
JP6323177B2 (ja) * | 2014-05-30 | 2018-05-16 | 日亜化学工業株式会社 | 半導体発光装置 |
US9698315B2 (en) | 2014-10-31 | 2017-07-04 | Nichia Corporation | Light emitting device |
JP6477361B2 (ja) * | 2014-10-31 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置 |
JP6531509B2 (ja) * | 2015-06-16 | 2019-06-19 | 日亜化学工業株式会社 | 窒化物蛍光体、その製造方法及び発光装置 |
JP2019143162A (ja) * | 2019-05-22 | 2019-08-29 | 日亜化学工業株式会社 | 窒化物蛍光体、その製造方法及び発光装置 |
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