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1984-09-21 |
1988-09-13 |
Commissariat A L'energie Atomique |
Silicon-containing polymer and its use as a masking resin in a lithography process
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FR2570844B1
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1984-09-21 |
1986-11-14 |
Commissariat Energie Atomique |
Film photosensible a base de polymere silicie et son utilisation comme resine de masquage dans un procede de lithographie
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DE3685766T2
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1985-04-18 |
1993-02-11 |
Fuji Chem Ind Co Ltd |
Photolackbildherstellungsverfahren.
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1985-08-07 |
1987-05-05 |
Polytechnic Institute Of New York |
Method of forming highly sensitive photoresist film in the absence of water
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1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
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1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
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*
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1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
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1985-09-27 |
1986-07-29 |
General Electric Company |
Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
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*
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1985-12-09 |
1987-05-12 |
International Business Machines Corporation |
Positive resist system having high resistance to oxygen reactive ion etching
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*
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1986-01-14 |
1987-04-14 |
International Business Machines Corporation |
Positive tone oxygen plasma developable photoresist
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*
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1986-02-24 |
1989-06-06 |
Hoechst Celanese Corporation |
High resolution photoresist of imide containing polymers
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1986-02-24 |
1990-03-27 |
Hoechst Celanese Corporation |
High resolution photoresist based on imide containing polymers
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*
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1986-02-24 |
1990-11-06 |
Hoechst Celanese Corporation |
High resolution photoresist of imide containing polymers
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*
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1986-04-11 |
1990-01-30 |
Chien James C W |
Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
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1986-04-30 |
1987-08-25 |
General Electric Company |
Block polymer compositions
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1986-06-13 |
1994-11-08 |
Microsi, Inc. |
Method for making a patterned resist substrate composite
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1986-06-13 |
1994-05-10 |
Microsi, Inc. |
Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
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DE3750275T3
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1986-06-13 |
1998-10-01 |
Microsi Inc |
Lackzusammensetzung und -anwendung.
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JPS6336240A
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1986-07-28 |
1988-02-16 |
インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン |
レジスト構造の作成方法
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1986-07-28 |
1990-07-03 |
Brunsvold William R |
Thermally stable photoresists with high sensitivity
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1986-10-23 |
1990-06-05 |
International Business Machines Corporation |
High sensitivity resists having autodecomposition temperatures greater than about 160° C.
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DE3751745T2
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*
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1986-10-23 |
1996-09-26 |
Ibm |
Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius
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US4800152A
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*
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1987-03-16 |
1989-01-24 |
International Business Machines Corporation |
Negative resist compositions
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*
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1987-04-06 |
1990-10-23 |
Asahi Kasei Kogyo Kabushiki Kaisha |
Photosensitive and heat-sensitive polymers, process for producing the same and process for recording information using the same
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1987-05-18 |
1988-10-04 |
Hoescht Celanese Corporation |
Image reversal
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*
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1987-05-19 |
1989-02-28 |
International Business Machines Corporation |
Vapor phase photoresist silylation process
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*
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1987-05-22 |
1990-10-09 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
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*
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1987-05-22 |
1989-03-07 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
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*
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1987-05-22 |
1992-01-14 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
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DE3721741A1
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1987-07-01 |
1989-01-12 |
Basf Ag |
Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
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US4916247A
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*
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1987-09-07 |
1990-04-10 |
Ciba-Geigy Corporation |
Organometal-containing compounds
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EP0307353A3
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*
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1987-09-07 |
1990-09-12 |
Ciba-Geigy Ag |
Organometallhaltige Polymere und deren Verwendung
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DE3821585A1
(de)
*
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1987-09-13 |
1989-03-23 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
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US4824758A
(en)
*
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1988-01-25 |
1989-04-25 |
Hoechst Celanese Corp |
Photoresist compositions based on acetoxystyrene copolymers
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JP2540199B2
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*
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1988-02-25 |
1996-10-02 |
アメリカン テレフォン アンド テレグラフ カムパニー |
デバイスの製造方法
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1988-02-25 |
1991-02-26 |
At&T Bell Laboratories |
Radiation sensitive materials and devices made therewith
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DE3812325A1
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1988-04-14 |
1989-10-26 |
Basf Ag |
Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien und verfahren zur herstellung von reliefmustern und reliefbildern
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DE3817009A1
(de)
*
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1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
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DE3817011A1
(de)
*
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1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
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DE3817010A1
(de)
*
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1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
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1988-08-01 |
1994-03-01 |
Hitachi, Ltd. |
Method of forming a positive photoresist pattern utilizing contrast enhancement overlayer containing trifluoromethanesulfonic, methanesulfonic or trifluoromethaneacetic aromatic diazonium salt
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JP2768692B2
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1988-08-01 |
1998-06-25 |
株式会社日立製作所 |
感放射線組成物及びパターン形成方法
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US6051659A
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1992-08-20 |
2000-04-18 |
International Business Machines Corporation |
Highly sensitive positive photoresist composition
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EP0366590B2
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1988-10-28 |
2001-03-21 |
International Business Machines Corporation |
Highly sensitive positive photoresist compositions
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DE3837438A1
(de)
*
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1988-11-04 |
1990-05-10 |
Basf Ag |
Strahlungsempfindliches gemisch
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DE3837513A1
(de)
*
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1988-11-04 |
1990-05-10 |
Basf Ag |
Strahlungsempfindliches gemisch
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DE3902115A1
(de)
*
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1989-01-25 |
1990-08-02 |
Basf Ag |
Strahlungsempfindliche polymere
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DE3907953A1
(de)
*
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1989-03-11 |
1990-09-13 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
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DE69027799T2
(de)
*
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1989-03-14 |
1997-01-23 |
Ibm |
Chemisch amplifizierter Photolack
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JP2661671B2
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1989-03-20 |
1997-10-08 |
株式会社日立製作所 |
パタン形成材料とそれを用いたパタン形成方法
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*
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1989-06-20 |
1995-02-21 |
Rohm And Haas Company |
Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
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EP0410606B1
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1989-07-12 |
1996-11-13 |
Fuji Photo Film Co., Ltd. |
Siloxane polymers and positive working light-sensitive compositions comprising the same
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US5220037A
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1989-07-22 |
1993-06-15 |
Basf Aktiengesellschaft |
Sulfonium salts and use thereof
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DE3924298A1
(de)
*
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1989-07-22 |
1991-02-07 |
Basf Ag |
Neue sulfoniumsalze und deren verwendung
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DE3927632A1
(de)
*
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1989-08-22 |
1991-02-28 |
Basf Ag |
Umsetzungsprodukt, verfahren zu dessen herstellung und damit erhaltenes strahlungsempfindliches material
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DE3930086A1
(de)
*
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1989-09-09 |
1991-03-21 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE3930087A1
(de)
*
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1989-09-09 |
1991-03-14 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE3930584A1
(de)
*
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1989-09-13 |
1991-03-14 |
Basf Ag |
Auf elektrophotographischem wege hergestellte offsetdruckplatte mit hydrophilen betonerten bereichen und oleophilen unbetonerten bereichen
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DE3935875A1
(de)
*
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1989-10-27 |
1991-05-02 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
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US5023164A
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*
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1989-10-23 |
1991-06-11 |
International Business Machines Corporation |
Highly sensitive dry developable deep UV photoresist
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DE3940965A1
(de)
*
|
1989-12-12 |
1991-06-13 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen
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AU631719B2
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*
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1989-12-15 |
1992-12-03 |
W.R. Grace & Co.-Conn. |
Autodeposition emulsion for selectively protecting metallic surfaces
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JPH03223858A
(ja)
*
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1990-01-30 |
1991-10-02 |
Matsushita Electric Ind Co Ltd |
パターン形成方法
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EP0440374B1
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*
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1990-01-30 |
1997-04-16 |
Wako Pure Chemical Industries Ltd |
Chemical amplified resist material
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US5216135A
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*
|
1990-01-30 |
1993-06-01 |
Wako Pure Chemical Industries, Ltd. |
Diazodisulfones
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DE4005212A1
(de)
*
|
1990-02-20 |
1991-08-22 |
Basf Ag |
Strahlungsempfindliches gemisch
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DE4007924A1
(de)
*
|
1990-03-13 |
1991-09-19 |
Basf Ag |
Strahlungsempfindliches gemisch
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JP2661317B2
(ja)
*
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1990-03-27 |
1997-10-08 |
松下電器産業株式会社 |
パターン形成方法
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JP2632066B2
(ja)
*
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1990-04-06 |
1997-07-16 |
富士写真フイルム株式会社 |
ポジ画像の形成方法
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US5262281A
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*
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1990-04-10 |
1993-11-16 |
E. I. Du Pont De Nemours And Company |
Resist material for use in thick film resists
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*
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1990-04-10 |
1992-09-08 |
E. I. Du Pont De Nemours And Company |
Positive working resist compositions process of exposing, stripping developing
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US5077174A
(en)
*
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1990-04-10 |
1991-12-31 |
E. I. Du Pont De Nemours And Company |
Positive working dry film element having a layer of resist composition
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US5219711A
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1990-04-10 |
1993-06-15 |
E. I. Du Pont De Nemours And Company |
Positive image formation utilizing resist material with carbazole diazonium salt acid generator
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US4985332A
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*
|
1990-04-10 |
1991-01-15 |
E. I. Du Pont De Nemours And Company |
Resist material with carbazole diazonium salt acid generator and process for use
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1990-04-10 |
1993-05-18 |
E. I. Du Pont De Nemours And Company |
Resist material and process for use
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US5252427A
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*
|
1990-04-10 |
1993-10-12 |
E. I. Du Pont De Nemours And Company |
Positive photoresist compositions
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US5206317A
(en)
*
|
1990-04-10 |
1993-04-27 |
E. I. Du Pont De Nemours And Company |
Resist material and process for use
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US5120629A
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*
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1990-04-10 |
1992-06-09 |
E. I. Du Pont De Nemours And Company |
Positive-working photosensitive electrostatic master
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US5120633A
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1990-04-10 |
1992-06-09 |
E. I. Du Pont De Nemours And Company |
Resist material for use in thick film resists
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EP0451311B1
(de)
*
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1990-04-12 |
1999-03-10 |
Siemens Aktiengesellschaft |
Verfahren zur Erzeugung einer Resiststruktur
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US5045431A
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1990-04-24 |
1991-09-03 |
International Business Machines Corporation |
Dry film, aqueous processable photoresist compositions
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JP2648804B2
(ja)
*
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1990-04-24 |
1997-09-03 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
ドライフィルム型の水性処理可能なホトレジスト組成物
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JP2648805B2
(ja)
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1990-04-24 |
1997-09-03 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
液体適用型の水性処理可能なホトレジスト組成物
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EP0453610B1
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1990-04-27 |
1996-06-26 |
Siemens Aktiengesellschaft |
Verfahren zur Erzeugung einer Resiststruktur
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JP2645384B2
(ja)
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1990-05-21 |
1997-08-25 |
日本ペイント株式会社 |
ポジ型感光性樹脂組成物
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DE69131658T2
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1990-06-25 |
2000-04-27 |
Matsushita Electronics Corp., Kadoma |
Licht- oder strahlungsempfindliche Zusammensetzung
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EP0465064B1
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1990-06-29 |
1998-12-09 |
Fujitsu Limited |
Process for forming patterns
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1990-07-31 |
1991-11-19 |
At&T Bell Laboratories |
Resist materials
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JPH0488346A
(ja)
*
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1990-07-31 |
1992-03-23 |
Nippon Paint Co Ltd |
レジスト組成物
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US5229244A
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1990-08-08 |
1993-07-20 |
E. I. Du Pont De Nemours And Company |
Dry processible photosensitive composition including photo-acid generator and optically clear polymer (co-polymer) blend that becomes tacky upon exposure to actinic radiation
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EP0476865A1
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*
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1990-08-31 |
1992-03-25 |
Wako Pure Chemical Industries Ltd |
Resist material and process for forming pattern using the same
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KR920008537A
(ko)
*
|
1990-10-19 |
1992-05-28 |
원본미기재 |
내식막 조성물
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JPH04158363A
(ja)
*
|
1990-10-22 |
1992-06-01 |
Mitsubishi Electric Corp |
パターン形成用レジスト材料
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US5082965A
(en)
*
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1990-10-29 |
1992-01-21 |
E. I. Du Pont De Nemours And Company |
Process for preparation of alkoxycarbonyloxystyrene
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1990-11-16 |
1993-08-31 |
Hoechst Celanese Corporation |
Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
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1990-11-16 |
1993-10-26 |
Hoechst Celanese Corporation |
Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
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1990-11-16 |
1994-04-19 |
Hoechst Celanese Corporation |
Process for the preparation of salts of 4-hydroxystyrene
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JPH04184345A
(ja)
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|
1990-11-19 |
1992-07-01 |
Fujitsu Ltd |
レジストパターンの形成方法
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JP3031421B2
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1990-11-28 |
2000-04-10 |
信越化学工業株式会社 |
化学増幅ポジ型レジスト材
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ES2090217T3
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1990-12-20 |
1996-10-16 |
Siemens Ag |
Laca fotosensible.
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DE59106537D1
(de)
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|
1990-12-20 |
1995-10-26 |
Siemens Ag |
Mischpolymere.
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DE59108680D1
(de)
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|
1990-12-20 |
1997-05-28 |
Siemens Ag |
Photostrukturierungsverfahren
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EP0492256B1
(de)
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1990-12-20 |
1996-08-14 |
Siemens Aktiengesellschaft |
Photolithographische Strukturerzeugung
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JP2968349B2
(ja)
*
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1991-02-01 |
1999-10-25 |
日本ペイント株式会社 |
多色表示装置の製造方法
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JPH04253939A
(ja)
*
|
1991-02-05 |
1992-09-09 |
Shin Etsu Chem Co Ltd |
パラ第三級ブトキシカルボニルオキシスチレンの合成方法
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1991-02-25 |
1993-06-15 |
Ibm Corporation |
Bilayer metallization cap for photolithography
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1991-03-05 |
1998-12-22 |
Nitto Denko Corporation |
Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
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DE4214363C2
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1991-04-30 |
1998-01-29 |
Toshiba Kawasaki Kk |
Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
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JPH04350657A
(ja)
*
|
1991-05-28 |
1992-12-04 |
Shin Etsu Chem Co Ltd |
レジスト材
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JP2707164B2
(ja)
*
|
1991-05-28 |
1998-01-28 |
信越化学工業株式会社 |
レジスト材
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JPH04359906A
(ja)
*
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1991-06-07 |
1992-12-14 |
Shin Etsu Chem Co Ltd |
ポリ（パラ−ｔ−ブトキシカルボニルオキシスチレン）及びその製造方法
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JP3030672B2
(ja)
*
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1991-06-18 |
2000-04-10 |
和光純薬工業株式会社 |
新規なレジスト材料及びパタ−ン形成方法
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DE4120172A1
(de)
*
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1991-06-19 |
1992-12-24 |
Hoechst Ag |
Strahlungsempfindliches gemisch, das als bindemittel neue polymere mit einheiten aus amiden von (alpha),(beta)-ungesaettigten carbonsaeuren enthaelt
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JP2655369B2
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1991-06-28 |
1997-09-17 |
富士写真フイルム株式会社 |
感光性組成物
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DE4124028A1
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1991-07-19 |
1993-01-21 |
Hoechst Ag |
Verfahren zur herstellung von n-tert.-butoxycarbonyl-maleimid
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DE4124029A1
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1991-07-19 |
1993-01-21 |
Hoechst Ag |
Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen
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EP0524759A1
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1991-07-23 |
1993-01-27 |
AT&T Corp. |
Device fabrication process
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US5250395A
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1991-07-25 |
1993-10-05 |
International Business Machines Corporation |
Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
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DE4126409A1
(de)
*
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1991-08-09 |
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