JP7451540B2 - パルス状電圧波形を制御するためのフィードバックループ - Google Patents

パルス状電圧波形を制御するためのフィードバックループ Download PDF

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JP7451540B2
JP7451540B2 JP2021542106A JP2021542106A JP7451540B2 JP 7451540 B2 JP7451540 B2 JP 7451540B2 JP 2021542106 A JP2021542106 A JP 2021542106A JP 2021542106 A JP2021542106 A JP 2021542106A JP 7451540 B2 JP7451540 B2 JP 7451540B2
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voltage waveform
waveform
feedback loop
voltage
feedback
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JP2022523653A5 (enExample
JP2022523653A (ja
Inventor
レオニド ドルフ，
エヴゲニー カメネツキー，
ジェームズ ロジャーズ，
オリヴィエ ルエール，
ラジンダー ディンサ，
ヴィアチェスラフ プロトニコフ，
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2025094544A priority patent/JP2025143284A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2021542106A 2019-01-22 2020-01-21 パルス状電圧波形を制御するためのフィードバックループ Active JP7451540B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024033466A JP7695430B2 (ja) 2019-01-22 2024-03-06 パルス状電圧波形を制御するためのフィードバックループ
JP2025094544A JP2025143284A (ja) 2019-01-22 2025-06-06 パルス状電圧波形を制御するためのフィードバックループ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962795545P 2019-01-22 2019-01-22
US62/795,545 2019-01-22
PCT/US2020/014453 WO2020154310A1 (en) 2019-01-22 2020-01-21 Feedback loop for controlling a pulsed voltage waveform

Related Child Applications (1)

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JP2024033466A Division JP7695430B2 (ja) 2019-01-22 2024-03-06 パルス状電圧波形を制御するためのフィードバックループ

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JP2022523653A JP2022523653A (ja) 2022-04-26
JP2022523653A5 JP2022523653A5 (enExample) 2023-01-31
JP7451540B2 true JP7451540B2 (ja) 2024-03-18

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JP2021542106A Active JP7451540B2 (ja) 2019-01-22 2020-01-21 パルス状電圧波形を制御するためのフィードバックループ
JP2024033466A Active JP7695430B2 (ja) 2019-01-22 2024-03-06 パルス状電圧波形を制御するためのフィードバックループ
JP2025094544A Pending JP2025143284A (ja) 2019-01-22 2025-06-06 パルス状電圧波形を制御するためのフィードバックループ

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JP2025094544A Pending JP2025143284A (ja) 2019-01-22 2025-06-06 パルス状電圧波形を制御するためのフィードバックループ

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US (5) US11699572B2 (enExample)
JP (3) JP7451540B2 (enExample)
KR (2) KR20250100790A (enExample)
CN (2) CN118315254A (enExample)
TW (2) TWI838453B (enExample)
WO (1) WO2020154310A1 (enExample)

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