JP7175114B2 - 載置台及び電極部材 - Google Patents
載置台及び電極部材 Download PDFInfo
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- JP7175114B2 JP7175114B2 JP2018136095A JP2018136095A JP7175114B2 JP 7175114 B2 JP7175114 B2 JP 7175114B2 JP 2018136095 A JP2018136095 A JP 2018136095A JP 2018136095 A JP2018136095 A JP 2018136095A JP 7175114 B2 JP7175114 B2 JP 7175114B2
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- 239000000758 substrate Substances 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 239000012530 fluid Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 description 53
- 239000003507 refrigerant Substances 0.000 description 38
- 239000002826 coolant Substances 0.000 description 35
- 238000012546 transfer Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000012267 brine Substances 0.000 description 6
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Description
まず、図1を参照しながら基板処理装置1の全体構成の一例について説明する。図1は、一実施形態に係る基板処理装置1の概略構成を示す断面図である。なお、本実施形態では、基板処理装置1がRIE(Reactive Ion Etching)型の基板処理装置である例について説明する。ただし、基板処理装置1は、プラズマエッチング装置やプラズマCVD(Chemical Vapor Deposition)装置等であってもよい。
従来、分岐部Aにおいてエッジリング30の載置面側に流れる冷媒と、ウエハWの載置面側に流れる冷媒の分配流量は固定比率であった。しかし、近年のプロセスの多様化に伴い、基板処理装置1にて行われるプロセスに応じてウエハWの載置側とエッジリングの載置側で抜熱量を変え、ウエハW及びエッジリング30の温度制御の精度を高めて基板処理を行うことが重要になっている。
かかる載置台11の構成と同様に、シャワーヘッド24にその内周側と外周側に分岐する冷媒流路を設け、その冷媒流路の分岐部又は合流部の少なくともいずれかに微調整部材を設けてもよい。また、シャワーヘッド24の冷媒流路の分岐部又は合流部の少なくともいずれかに粗調整部材を設けてもよい。
10 処理容器
11 載置台
11a 基台
21a 第1の高周波電源
21b 第2の高周波電源
24 シャワーヘッド
25 静電チャック
25a 中央部
25b 外周部
26 電極
27 直流電源
28 直流電源
29 電極
30 エッジリング
31a、31b 冷媒流路
32 チラーユニット
43 制御部
50 微調整部材
50a1、50a2 開口部
51a、51b、51 粗調整部材
52 Oリング
A 分岐部
B 合流部
W ウエハ
Claims (11)
- 基台と、
前記基台の上部に配置され、基板載置面及びエッジリング載置面を有する静電チャックと、
前記基台の内部にて、前記基板載置面に対応する位置に配置される第1の流路と、
前記基台の内部にて、前記エッジリング載置面に対応する位置に配置される第2の流路と、
前記第1の流路の入口と前記第2の流路の入口とを連結する分岐部と、
前記第1の流路の出口と前記第2の流路の出口とを連結する合流部と、
前記分岐部又は前記合流部の少なくともいずれかに設けられ、前記第1の流路と連通する中空が形成され、前記中空及び前記第2の流路と連通する開口部が側面に形成された筒状部材と、
を備える載置台。 - 基台と、
前記基台の上部に配置され、基板載置面及びエッジリング載置面を有する静電チャックと、
前記基台の内部にて、前記基板載置面に対応する位置に配置される第1の流路と、
前記基台の内部にて、前記エッジリング載置面に対応する位置に配置される第2の流路と、
前記第1の流路の入口と前記第2の流路の入口とを連結する分岐部と、
前記第1の流路の出口と前記第2の流路の出口とを連結する合流部と、
前記第2の流路の同一面に設けられた突起状部材と、
を備える載置台。 - 前記第2の流路の同一面に設けられた突起状部材を有する、
請求項1に記載の載置台。 - 前記筒状部材の前記側面に形成される開口部は、複数である、
請求項1又は3に記載の載置台。 - 前記筒状部材は、着脱可能に設けられる、
請求項1、3、4のいずれか一項に記載の載置台。 - 前記突起状部材は、複数である、
請求項2又は3に記載の載置台。 - 前記筒状部材は、前記分岐部又は前記合流部のいずれか一方に設けられる、
請求項3に記載の載置台。 - 前記突起状部材は、前記筒状部材が有する開口部から流入する流体の流れを妨げる位置に設けられる、
請求項7に記載の載置台。 - 前記突起状部材は、前記分岐部又は前記合流部のいずれか一方に連結する前記第2の流路に設けられる、
請求項3に記載の載置台。 - 被処理体を載置する載置台と対向するシャワーヘッドであって、
前記シャワーヘッドの内部にて、内周側に配置される第1の流路と、
前記シャワーヘッドの内部にて、外周側に配置される第2の流路と、
前記第1の流路の入口と前記第2の流路の入口とを連結する分岐部と、
前記第1の流路の出口と前記第2の流路の出口とを連結する合流部と、
前記分岐部又は前記合流部の少なくともいずれかに設けられ、前記第1の流路と連通する中空が形成され、前記中空及び前記第2の流路とを連通する開口部が側面に形成された筒状部材と、
を備える電極部材。 - 前記第2の流路の同一面に設けられた突起状部材を有する、
請求項10に記載の電極部材。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
JP7175114B2 (ja) * | 2018-07-19 | 2022-11-18 | 東京エレクトロン株式会社 | 載置台及び電極部材 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
WO2024075208A1 (ja) * | 2022-10-05 | 2024-04-11 | 日本碍子株式会社 | ウエハ載置台における均熱性の調整方法およびウエハ載置台の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216140A (ja) | 1999-01-20 | 2000-08-04 | Hitachi Ltd | ウエハステ―ジおよびウエハ処理装置 |
JP2004259829A (ja) | 2003-02-25 | 2004-09-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008187063A (ja) | 2007-01-31 | 2008-08-14 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2011035201A (ja) | 2009-08-03 | 2011-02-17 | Sumitomo Electric Ind Ltd | 気相処理装置、気相処理方法および基板 |
JP2013161522A (ja) | 2012-02-01 | 2013-08-19 | Ngk Insulators Ltd | セラミックヒータ |
JP2018110216A (ja) | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3742349B2 (ja) * | 2002-02-15 | 2006-02-01 | 株式会社日立製作所 | プラズマ処理装置 |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
JP2006521499A (ja) * | 2003-03-28 | 2006-09-21 | マイクロゲン エナジー リミテッド | 熱電併給システム |
US7815740B2 (en) * | 2005-03-18 | 2010-10-19 | Tokyo Electron Limited | Substrate mounting table, substrate processing apparatus and substrate processing method |
JP2006261541A (ja) * | 2005-03-18 | 2006-09-28 | Tokyo Electron Ltd | 基板載置台、基板処理装置および基板処理方法 |
JP4551256B2 (ja) | 2005-03-31 | 2010-09-22 | 東京エレクトロン株式会社 | 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム |
JP2009060011A (ja) * | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | 基板載置台、基板処理装置、及び温度制御方法 |
JP5032269B2 (ja) | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置 |
JP2010199421A (ja) * | 2009-02-26 | 2010-09-09 | Toshiba Corp | プラズマ処理装置およびプラズマエッチング方法 |
WO2011048724A1 (ja) * | 2009-10-22 | 2011-04-28 | ダイキン工業株式会社 | 流路切換弁、及びそれを備えた空気調和機 |
JP5975754B2 (ja) * | 2012-06-28 | 2016-08-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
CN111048394A (zh) * | 2017-01-05 | 2020-04-21 | 东京毅力科创株式会社 | 等离子体处理装置 |
JP7175114B2 (ja) * | 2018-07-19 | 2022-11-18 | 東京エレクトロン株式会社 | 載置台及び電極部材 |
US10910243B2 (en) * | 2018-08-31 | 2021-02-02 | Applied Materials, Inc. | Thermal management system |
JP7221737B2 (ja) * | 2019-03-04 | 2023-02-14 | 日本碍子株式会社 | ウエハ載置装置 |
-
2018
- 2018-07-19 JP JP2018136095A patent/JP7175114B2/ja active Active
-
2019
- 2019-07-08 WO PCT/JP2019/027041 patent/WO2020017387A1/ja active Application Filing
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- 2019-07-08 US US16/976,544 patent/US11421323B2/en active Active
- 2019-07-09 TW TW108124088A patent/TWI823966B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216140A (ja) | 1999-01-20 | 2000-08-04 | Hitachi Ltd | ウエハステ―ジおよびウエハ処理装置 |
JP2004259829A (ja) | 2003-02-25 | 2004-09-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008187063A (ja) | 2007-01-31 | 2008-08-14 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2011035201A (ja) | 2009-08-03 | 2011-02-17 | Sumitomo Electric Ind Ltd | 気相処理装置、気相処理方法および基板 |
JP2013161522A (ja) | 2012-02-01 | 2013-08-19 | Ngk Insulators Ltd | セラミックヒータ |
JP2018110216A (ja) | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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