TW202018854A - 載置台及電極構件 - Google Patents

載置台及電極構件 Download PDF

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TW202018854A
TW202018854A TW108124088A TW108124088A TW202018854A TW 202018854 A TW202018854 A TW 202018854A TW 108124088 A TW108124088 A TW 108124088A TW 108124088 A TW108124088 A TW 108124088A TW 202018854 A TW202018854 A TW 202018854A
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flow path
mounting table
refrigerant
adjustment member
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TWI823966B (zh
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林大輔
石川真矢
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日商東京威力科創股份有限公司
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Abstract

本發明提供一種可於載置被處理體及邊環之載置台中調整排熱量之技術。 本發明提供一種載置台，其係載置被處理體及邊環者，且具備：第1流路及第2流路，其等在上述載置台之內部流通流體；分支部，其連結上述第1流路之入口與上述第2流路之入口；合流部，其連結上述第1流路之出口與上述第2流路之出口；及構件，其設置於上述分支部或上述合流部中之至少任一者，且具有連通於上述第1流路與上述第2流路之開口部。

Description

載置台及電極構件
本發明係關於一種載置台及電極構件。
專利文獻1係藉由設置於流路配管之開關閥之操作來切換載置台內之流路。專利文獻2係控制於載置台內之中央部與外周部之流路中流動之熱介質之量或混合比。該等文獻中，提出有控制載置於載置台之晶圓之載置面之中央部與周邊部的溫度。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2006-286733號公報 [專利文獻2]日本專利特開2009-117443號公報
[發明所欲解決之問題]
本發明提供一種可於載置被處理體及邊環之載置台中調整排熱量之技術。 [解決問題之技術手段]
根據本發明之一態樣，提供一種載置台，其係載置被處理體及邊環者，且具備：第1流路及第2流路，其等在上述載置台之內部流通流體；分支部，其連結上述第1流路之入口與上述第2流路之入口；合流部，其連結上述第1流路之出口與上述第2流路之出口；及構件，其設置於上述分支部或上述合流部中之至少任一者，且具有連通於上述第1流路與上述第2流路之開口部。 [發明之效果]
根據一態樣，可於載置被處理體及邊環之載置台中調整排熱量。
以下，參照圖式對用以實施本發明之形態進行說明。再者，於本說明書及圖式中，藉由對實質上相同之構成標註相同之符號而省略重複之說明。
[基板處理裝置之整體構成] 首先，一面參照圖1一面對基板處理裝置1之整體構成之一例進行說明。圖1係表示一實施形態之基板處理裝置1之概略構成之剖視圖。再者，本實施形態中，對基板處理裝置1為RIE(Reactive Ion Etching，反應性離子蝕刻)型基板處理裝置之例進行說明。但是，基板處理裝置1亦可為電漿蝕刻裝置或電漿CVD(Chemical Vapor Deposition，化學氣相沈積)裝置等。
圖1中，基板處理裝置1具有金屬製、例如鋁或不鏽鋼製之接地之圓筒型處理容器10。於該處理容器10之內部，配置有載置晶圓W之圓板狀之載置台11。載置台11具有基台11a及靜電吸盤25。靜電吸盤25配置於基台11a之上部。基台11a例如包含鋁，經由絕緣性之筒狀保持構件12支持於自處理容器10之底朝垂直上方延伸之筒狀支持部13。
於處理容器10之側壁與筒狀支持部13之間形成有排氣通路14，於排氣通路14之入口或中途配設有環狀之隔板15。於處理容器10之底部設置有排氣口16，於排氣口16，經由排氣管17而連接有排氣裝置18。排氣裝置18具有乾式泵及真空泵，將處理容器10內之處理空間減壓至特定之真空度。又，排氣管17具有作為可變式蝶形閥之自動壓力控制閥(automatic pressure control valve)(以下，稱為「APC」)，APC自動地進行處理容器10內之壓力控制。進而，於處理容器10之側壁，安裝有將晶圓W之搬入搬出口19開閉之閘閥20。
於載置台11，經由第1整合器22a連接有第1高頻電源21a。又，於載置台11，經由第2整合器22b連接有第2高頻電源21b。第1高頻電源21a將特定頻率(例如100 MHz)之電漿產生用之高頻電力供給至載置台11。第2高頻電源21b將較第1高頻電源21a低之特定頻率(例如13 MHz)之離子引入用之高頻電力供給至載置台11。藉此，載置台11亦作為下部電極發揮功能。
於處理容器10之頂壁，配設有亦作為上部電極發揮功能之簇射頭24。藉此，對載置台11與簇射頭24之間施加來自第1高頻電源21a及第2高頻電源21b之二倍頻高頻電壓。再者，簇射頭24相當於與載置晶圓W之載置台11對向之電極構件。
靜電吸盤25設置於載置台11之上表面，以靜電吸附力吸附晶圓W。靜電吸盤25具有圓板狀之中央部25a、及以包圍中央部25a之方式形成之環狀之外周部25b。中央部25a相對於外周部25b朝圖中上方突出，且於圓板狀之中央部25a之上表面載置晶圓W。於外周部25b之上表面，載置呈環狀包圍中央部25a之邊環30。中央部25a係藉由將包含導電膜之電極26夾入至一對介電膜之間而構成。
外周部25b係藉由將包含導電膜之電極29夾入至一對介電膜之間而構成。電極29於邊環30之下側配置成環狀。於電極26連接有直流電源27。於電極29連接有直流電源28。直流電源27及直流電源28能夠進行供給之直流電壓之位準及極性之變更。直流電源27藉由來自控制部43之控制而對電極26施加直流電壓。直流電源28藉由來自控制部43之控制而對電極29施加直流電壓。靜電吸盤25藉由自直流電源27施加至電極26之電壓而產生庫倫力等靜電力，且藉由靜電力將晶圓W吸附保持於靜電吸盤25。又，靜電吸盤25藉由自直流電源28施加至電極29之電壓而產生庫倫力等靜電力，且藉由靜電力將邊環30吸附保持於靜電吸盤25。
於載置台11之內部，例如設置有於圓周方向延伸之冷媒流路31a、31b。冷媒流路31a配置於載置台11之中央側，冷媒流路31b配置於載置台11之外周側。冷媒流路31a係配置於與載置台11之載置晶圓W之載置面對應之位置的第1流路之一例。冷媒流路31b係配置於與載置台11之載置邊環30之載置面對應之位置的第2流路之一例。
於冷媒流路31a、31b中，自冷卻器單元32經由配管33、34而循環供給特定溫度之冷媒、例如冷卻水。根據該冷媒之溫度與對冷媒流路31a、31b之冷媒分配比率控制靜電吸盤25上之晶圓W及邊環30之處理溫度。
具體而言，藉由設置於冷卻器單元32之泵將特定溫度之冷媒自冷卻器單元32噴出，通過配管33，於配管33分支之分支部A分流，且流向冷媒流路31a、31b。分支部A連結冷媒流路31a之入口與冷媒流路31b之入口，使冷媒以特定之分流比自冷媒流路31a之入口IN1與冷媒流路31b之入口IN2流入至各冷媒流路31a、31b。
冷媒流路31a形成於基台11a之載置晶圓W之載置面側，且形成為螺旋狀。於分支部A分流後之冷媒自冷媒流路31a之入口IN1流入，於螺旋狀之冷媒流路31a中自外周側朝內周方向流動，於中央折回，自內周側朝外周方向流動，且自冷媒流路31a之出口OUT1流出。
冷媒流路31b形成於基台11a之載置邊環30之載置面側，且形成為環狀。於分支部A分流後之冷媒自冷媒流路31b之入口IN2流入，流經環狀之冷媒流路31b，且自冷媒流路31b之出口OUT2流出。
圖2係表示一實施形態之基台11a內之冷媒流路31a、31b之一例的圖。但是，圖2所示之冷媒流路31a、31b之形狀為一例，並不限於此。例如，圖2中，冷媒流路31a可形成為環狀，亦可為圓板狀之空間。又，冷媒流路31a之入口IN1之流路與出口OUT1之流路雖形成於同一方向，但並不限於此，亦可形成為朝向相反方向。又，圖2中，冷媒流路31b係形成一條環狀之流路，但亦可為複數條流路。
藉由該構成，於分支部A分流後之冷媒以特定之分配比率在冷媒流路31a、31b中流動，且於連結冷媒流路31a之出口OUT1與冷媒流路31b之出口OUT2之配管34之合流部B合流，並返回至冷卻器單元32。返回至冷卻器單元32之冷媒於被控制為特定溫度之狀態下再次自冷卻器單元32噴出，於上述路徑中循環。
返回至圖1，於靜電吸盤25，經由氣體供給管線36而連接有傳熱氣體供給部35。傳熱氣體供給部35使用到達靜電吸盤25之中央部25a之晶圓側管線36a，向由靜電吸盤25之中央部25a與晶圓W夾著的空間供給傳熱氣體。
氣體供給管線36並不限於到達靜電吸盤25之中央部25a之晶圓側管線，亦可具有到達靜電吸盤25之外周部25b之邊環側管線(未圖示)。該構成中，傳熱氣體供給部35亦可使用邊環側管線，向由靜電吸盤25之外周部25b與邊環30夾著的空間供給傳熱氣體。作為傳熱氣體，可較佳地使用具有導熱性之氣體、例如He氣體等。
頂壁之簇射頭24具有：下表面之電極板37，其具有多個氣體通氣孔37a；及電極支持體38，其將該電極板37可裝卸地支持。於電極支持體38之內部設置有緩衝室39，於緩衝室39之氣體導入口38a，經由氣體供給配管41而連接有處理氣體供給部40。又，於處理容器10之周圍，配置有呈環狀或同心狀延伸之磁鐵42。
基板處理裝置1之各構成要素連接於控制部43。例如，排氣裝置18、第1高頻電源21a、第2高頻電源21b、直流電源27、28、冷卻器單元32、傳熱氣體供給部35及處理氣體供給部40連接於控制部43。控制部43控制基板處理裝置1之各構成要素。
控制部43具備未圖示之中央處理裝置(CPU(Central Processing Unit，中央處理單元))及記憶體(記憶裝置)，藉由讀出並執行記憶於記憶裝置中之程式及處理方案，而於基板處理裝置1中執行所需之處理。例如，控制部43進行用以靜電吸附晶圓W及邊環30之靜電吸附處理、或冷卻器單元32之溫度控制處理。
於基板處理裝置1之處理容器10內，藉由磁鐵42而形成朝一方向之水平磁場，並且藉由施加至載置台11與簇射頭24之間之高頻電壓而形成鉛直方向之RF(radio frequency，射頻)電場。藉此，於處理容器10內進行經由處理氣體之磁控放電，而於載置台11之表面附近自處理氣體產生電漿。
於基板處理裝置1中，於乾式蝕刻處理時，首先使閘閥20為開狀態而將加工對象之晶圓W搬入至處理容器10內，且載置於靜電吸盤25上。然後，於基板處理裝置1中，藉由處理氣體供給部40將處理氣體(例如，包含C4 F8 氣體、O2 氣體及Ar氣體之混合氣體)以特定之流量及特定之流量比率導入至處理容器10內，且藉由排氣裝置18等將處理容器10內之壓力設為特定值。
進而，於基板處理裝置1中，自第1高頻電源21a及第2高頻電源21b分別將高頻電力供給至載置台11。又，於基板處理裝置1中，自直流電源27將直流電壓施加至靜電吸盤25之電極26，從而將晶圓W吸附於靜電吸盤25上。又，於基板處理裝置1中，自直流電源28將直流電壓施加至靜電吸盤25之電極29，從而將邊環30吸附於靜電吸盤25上。自簇射頭24噴出之處理氣體如上所述般電漿化，藉由利用電漿產生之自由基或離子對晶圓W之表面進行蝕刻。
[冷媒之分配流量之可變比率] 先前，於分支部A流向邊環30之載置面側之冷媒、與流向晶圓W之載置面側之冷媒之分配流量為固定比率。然而，隨著近年來製程之多樣化，根據於基板處理裝置1中執行之製程而於晶圓W之載置側與邊環之載置側改變排熱量，提高晶圓W及邊環30之溫度控制之精度而進行基板處理變得重要。
因此，本實施形態中提供一種新穎之構成，即，於載置晶圓W及邊環30之載置台11可根據製程條件、用途及狀況使朝晶圓W之載置側與邊環30之載置側之冷媒之流量比率可變，從而能夠調整排熱量。
具體而言，如圖3(a)中之一例所示，於配管33之分支部A可裝卸地配置一實施形態之微調構件50。如圖4中之一例所示，微調構件50為中空之筒狀構件，於側面形成有開口部50a1、50a2。以下，亦將開口部50a1、50a2總稱為開口部50a。
返回至圖3，微調構件50以將開口部50a設置在連通於冷媒流路31b之入口IN2之流路33a之方式安裝於配管33之分支部A。以此方式，微調構件50具有根據開口部50a之面積來調整流向冷媒流路31a與冷媒流路31b之冷媒之流量比率的可更換之適配器之功能。
形成於微調構件50之開口部50a之個數、大小、形狀及開口位置並不限於圖4之例。例如，開口部50a可為1個，亦可為2個以上。又，開口部50a之形狀可為四邊形等多邊形，亦可為圓，還可為狹縫。於圖3之例中，如圖3(b)所示，微調構件50具有2個開口部50a1、50a2。
本實施形態中，預先準備開口部50a之個數、大小、形狀及位置不同之複數個微調構件50作為更換適配器，根據製程條件而適當地更換配置於分支部A之微調構件50。藉此，藉由在保持使載置台11本身共通之狀態下更換微調構件50，可改變朝邊環30側之壓力損失，從而能夠簡易地變更朝晶圓W之載置側與邊環30之載置側之冷媒之分流形式。
如此般將微調構件50可更換地配置。因此，如圖3(a)所示，於微調構件50之底部，設置有固定微調構件50之O形環52。藉此，可防止冷媒自安裝有微調構件50之配管33與微調構件50之間隙漏出而導致壓力變動。此外，藉由在配管33內將微調構件50固定成無法活動，而可防止微調構件50與載置台11摩擦而產生微粒。
將圖3(a)所示之自配管33分支之流路33a及其周邊之立體圖示於圖3(b)之虛線框內。粗調構件51具有粗調構件51a、51b。粗調構件51a、51b於分支部A之附近、且微調構件50之附近配置於流路33a內。本實施形態中，粗調構件51a、51b於與開口部50a1、50a2對向之位置配置有2個，但並不限於此，亦可為1個，還可為3個以上。以下，亦將粗調構件51a、51b總稱為粗調構件51。
粗調構件51較佳為設置於阻礙或打亂自微調構件50之開口部50a流入之冷媒之流動的位置。圖5(c)係表示一實施形態之粗調構件51之配置例之圖。圖5(c)之例中，於微調構件50之與開口部50a1對向之位置配置有粗調構件51a，於微調構件50之與開口部50a2對向之位置配置有粗調構件51b。藉此，自微調構件50之開口部50a1、50a2流經流路33a之冷媒被粗調構件51a、51b打亂流動，一面擴散一面自流路33a與粗調構件51a、51b之間之間隙朝邊環30側之冷媒流路31b流動。
相對於此，於圖5(a)及圖5(b)之比較例中，未配置粗調構件51。因此，如圖5(a)所示，若微調構件50之開口部50a較小，則於流路33a之近前側(微調構件50側)產生以斜線所示之冷媒等流體不通過之區域。又，如圖5(b)所示，若微調構件50之開口部50a較大，則於流路33a之裏側(與微調構件50相反之側)產生以斜線所示之冷媒等流體不通過之區域。
該等流體不通過之區域因會產生鹽水沖洗時之冷媒殘液，故而不佳。所謂鹽水沖洗係指將靜電吸盤25自基板處理裝置1卸下進行維護時，利用N2 氣體等對冷媒流路31a、31b及流路33a之內部進行沖洗，並排出冷媒(鹽水)。此時，藉由將本實施形態之粗調構件51a、51b設置於與微調構件50之開口部50a對向之位置，可於流路33a內之圖5(a)及圖5(b)中以斜線所示之部分亦充分地流動N2 氣體等。其結果，可將冷媒流路31a、31b及流路33a之內部完全沖洗，於所有流路中防止冷媒之殘液。但是，粗調構件51之個數並不限於與微調構件50之開口部50a之個數相同，只要於成為N2 氣體流動之阻礙之位置配置1個或複數個即可。
如以上所說明般，本實施形態中，於載置晶圓W及邊環30之載置台11中，於冷媒流路31a、31b之分支部A設置2個階段之調整機構、亦即微調構件50與粗調構件51。藉此，藉由調整分流至冷媒流路31a、31b之冷媒之流量比率，可調整排熱量。
尤其是自開口部50a之面積不同之複數個微調構件50中，可裝卸地更換與製程條件相應之具有開口部50a之微調構件50。藉此，可改變流向晶圓W側與邊環30側之冷媒之調整範圍，能夠進行與製程條件吻合之晶圓W側及邊環30側之溫度控制。
又，藉由設置粗調構件51，可防止鹽水沖洗時之冷媒之殘液。再者，微調構件50係具有連通於冷媒流路31a與冷媒流路31b之開口部之構件之一例。本實施形態中雖將微調構件50設置於分支部A，但並不限於此，亦可設置於分支部A或合流部B中之至少任一者。
粗調構件51係設置於分支部A或合流部B中之至少任一者之突起狀構件之一例。本實施形態中雖將粗調構件51設置於分支部A，但並不限於此，亦可設置於分支部A或合流部B中之至少任一者。
但是，較佳為於分支部A或合流部B中之任一者設置微調構件50與粗調構件51兩者，於分支部A或合流部B中之任一者進行分流控制。例如，圖3中，微調構件50與粗調構件51均設置於分支部A之流路33a，而未設置於合流部B之流路34a。其原因在於，若將微調構件50設置於分支部A或合流部B兩者，則會於兩者進行冷媒之流量比率之調整，從而難以控制為指定之流量比率。又，其原因在於，若將微調構件50與粗調構件51分別配置於分支部A與合流部B，則無法利用粗調構件51阻礙自微調構件50之開口部50a流出之冷媒之流動，而於鹽水沖洗時產生殘液。
但是，微調構件50與粗調構件51之配置並不限於圖3所示之構成，亦可設為如下構成：將微調構件50與粗調構件51設置於合流部B之流路34a，而不設置於分支部A之流路33a。
於鹽水沖洗時不會產生殘液之形狀之流路33a、34a之情形時，亦可將微調構件50配置於分支部A或合流部B中之至少任一者，且不設置粗調構件51。此時，亦可將粗調構件51設置於未配置微調構件50之分支部A或合流部B。還可將粗調構件51配置於分支部A或合流部B中之至少任一者，且不設置微調構件50。
[變化例] 與該載置台11之構成同樣地，亦可於簇射頭24設置分支於其內周側與外周側之冷媒流路，且於該冷媒流路之分支部或合流部中之至少任一者設置微調構件。又，亦可於簇射頭24之冷媒流路之分支部或合流部中之至少任一者設置粗調構件。
該構成之簇射頭24係與載置晶圓W之載置台11對向之電極構件之一例，且亦可具備：第1流路(例如簇射頭24之內周側之冷媒流路)及第2流路(例如簇射頭24之外周側之冷媒流路)，其等在上述電極構件之內部流通流體；分支部，其連結上述第1流路之入口與上述第2流路之入口；合流部，其連結上述第1流路之出口與上述第2流路之出口；及構件(例如微調構件)，其設置於分支部或合流部中之至少任一者，且具有連通於上述第1流路與上述第2流路之開口部。進而，簇射頭24亦可具有作為設置於分支部或合流部中之至少任一者之突起狀構件之一例之粗調構件51。
本實施形態中，冷媒於第1流路及第2流路中流動。然而，於第1流路及第2流路中流動之流體並不限於液體，亦可為氣體。亦即，微調構件50及粗調構件51可配置於設置有流體流路之構件之分支部或合流部，例如，亦可使用於載置台11內之流通He氣體之流路中。例如，假定圖1之流通He氣體之氣體供給管線為分支成到達靜電吸盤25之中央部25a之晶圓側管線36a與未圖示之到達外周部25b之邊環側管線之構造之情形。於該情形時，亦可將微調構件50或粗調構件51中之至少任一者配置於2條氣體管線之分支部或合流部中之至少任一者。藉此，能夠可變地調整流向晶圓側管線36a與邊環側管線之He氣體之分流比。
又，於圖1之緩衝室39具有內周側之室與外周側之室之情形時，亦可將微調構件50或粗調構件51中之至少任一者設置於分支於內周側之室與外周側之室之分支部。藉此，可使自氣體供給部40供給之處理氣體以特定之流量比率分流至內周側之室與外周側之室。
如以上所說明般，根據本實施形態，可控制於載置晶圓及邊環30之載置台11中循環之冷媒或氣體流向晶圓側與邊環側之流量比率，從而調整晶圓側與邊環側之排熱量或傳熱量。
又，根據本實施形態之變化例，可控制於簇射頭24中循環之冷媒流向緩衝室39之內周側之室與外周側之室之流量比率，從而調整簇射頭24之內周側與外周側之排熱量。
應當認為，本次所揭示之一實施形態之載置台及電極構件於所有方面為例示而非限制性者。上述實施形態可於不脫離隨附之申請專利範圍及其主旨之情況下以各種形態實施變化及改良。上述複數個實施形態所記載之事項可於不矛盾之範圍內亦能採取其他構成，又，可於不矛盾之範圍內進行組合。
本發明之處理裝置對於Capacitively Coupled Plasma(CCP，電容耦合電漿)、Inductively Coupled Plasma(ICP，感應耦合電漿)、Radial Line Slot Antenna(RLSA，徑線槽孔天線)、Electron Cyclotron Resonance Plasma(ECR，電子回旋共振電漿)、Helicon Wave Plasma(HWP，螺旋波電漿)之任何類型均能夠應用。
本說明書中，列舉晶圓W作為基板之一例進行了說明。然而，基板並不限於此，亦可為用於FPD(Flat Panel Display，平板顯示器)之各種基板、印刷基板等。
1:基板處理裝置 10:處理容器 11:載置台 11a:基台 12:筒狀保持構件 13:筒狀支持部 14:排氣通路 15:隔板 16:排氣口 17:排氣管 18:排氣裝置 19:搬入搬出口 20:閘閥 21a:第1高頻電源 21b:第2高頻電源 22a:第1整合器 22b:第2整合器 24:簇射頭 25:靜電吸盤 25a:中央部 25b:外周部 26:電極 27:直流電源 28:直流電源 29:電極 30:邊環 31a:冷媒流路 31b:冷媒流路 32:冷卻器單元 33:配管 33a:流路 34:配管 34a:流路 35:傳熱氣體供給部 36:氣體供給管線 36a:晶圓側管線 37:電極板 37a:氣體通氣孔 38:電極支持體 38a:氣體導入口 39:緩衝室 40:處理氣體供給部 41:氣體供給配管 42:磁鐵 43:控制部 50:微調構件 50a:開口部 50a1:開口部 50a2:開口部 51:粗調構件 51a:粗調構件 51b:粗調構件 52:O形環 A:分支部 B:合流部 IN1:入口 IN2:入口 OUT1:出口 OUT2:出口 W:晶圓
圖1係表示包含一實施形態之載置台之基板處理裝置之一例的圖。 圖2係表示一實施形態之載置台之流路之一例的圖。 圖3(a)、(b)係表示一實施形態之微調構件及粗調構件之配置之一例的圖。 圖4係表示一實施形態之微調構件之一例之圖。 圖5(a)～(c)係表示一實施形態之粗調構件之一例之圖。
11a:基台
25a:中央部
25b:外周部
26:電極
29:電極
30:邊環
31a:冷媒流路
31b:冷媒流路
32:冷卻器單元
33:配管
33a:流路
34a:流路
50:微調構件
50a:開口部
50a1:開口部
50a2:開口部
51:粗調構件
51a:粗調構件
51b:粗調構件
52:O形環
A:分支部
B:合流部
IN1:入口
IN2:入口

Claims (12)

  1. 一種載置台，其係載置被處理體及邊環者，且具備： 第1流路及第2流路，其等在上述載置台之內部流通流體； 分支部，其連結上述第1流路之入口與上述第2流路之入口； 合流部，其連結上述第1流路之出口與上述第2流路之出口；及 構件，其設置於上述分支部或上述合流部中之至少任一者，且具有連通於上述第1流路與上述第2流路之開口部。
  2. 一種載置台，其係載置被處理體及邊環者，且具備： 第1流路及第2流路，其等在上述載置台之內部流通流體； 分支部，其連結上述第1流路之入口與上述第2流路之入口； 合流部，其連結上述第1流路之出口與上述第2流路之出口；及 突起狀構件，其設置於上述分支部或上述合流部中之至少任一者。
  3. 如請求項1之載置台，其 具有設置於上述分支部或上述合流部中之至少任一者之突起狀構件。
  4. 如請求項1或3之載置台，其中 上述構件所具有之開口部為複數個。
  5. 3、4中任一項之載置台，其中 具有上述開口部之構件係可裝卸地設置。
  6. 如請求項2或3之載置台，其中 上述突起狀構件為複數個。
  7. 如請求項3之載置台，其中 具有上述開口部之構件與上述突起狀構件設置於上述分支部或上述合流部中之任一者。
  8. 如請求項7之載置台，其中 上述突起狀構件設置於阻礙自上述構件所具有之開口部流入之流體流動之位置。
  9. 如請求項1至8中任一項之載置台，其中 上述第1流路配置於與上述載置台之載置面中之載置被處理體之載置面對應之位置。
  10. 如請求項1至9中任一項之載置台，其中 上述第2流路配置於與上述載置台之載置面中之載置上述邊環之載置面對應之位置。
  11. 一種電極構件，其係與載置被處理體之載置台對向者，且具備： 第1流路及第2流路，其等在上述電極構件之內部流通流體； 分支部，其連結上述第1流路之入口與上述第2流路之入口； 合流部，其連結上述第1流路之出口與上述第2流路之出口；及 構件，其設置於上述分支部或上述合流部中之至少任一者，且具有連通於上述第1流路與上述第2流路之開口部。
  12. 如請求項11之電極構件，其 具有設置於上述分支部或上述合流部中之至少任一者之突起狀構件。
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