CN111801779A - 载置台及电极部件 - Google Patents

载置台及电极部件 Download PDF

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CN111801779A
CN111801779A CN201980016960.8A CN201980016960A CN111801779A CN 111801779 A CN111801779 A CN 111801779A CN 201980016960 A CN201980016960 A CN 201980016960A CN 111801779 A CN111801779 A CN 111801779A
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flow path
channel
refrigerant
mounting table
adjustment member
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CN111801779B (zh
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林大辅
石川真矢
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Abstract

提供一种载置台，其用于放置被处理体及边缘环，该载置台包括：第一流路和第二流路，用于使流体在所述载置台的内部流动；分岔部，将所述第一流路的入口与所述第二流路的入口连接；汇合部，将所述第一流路的出口与所述第二流路的出口连接；以及部件，设置在所述分岔部或所述汇合部中的至少任意一者处，并且具有与所述第一流路和所述第二流路连通的开口部。

Description

载置台及电极部件
技术领域
本公开涉及一种载置台及电极部件。
背景技术
在专利文献1中，通过设置在流路配管中的开闭阀的操作来对载置台内的流路进行切换。在专利文献2中，对在载置台内的中央部和外周部的流路中流动的热介质的量或混合比进行控制。在该些文献中，提出了对放置在载置台上的晶圆的载置面的中央部和周边部的温度进行控制的方法。
<现有技术文献>
<专利文献>
专利文献1：(日本)特开2006-286733号公报
专利文献2：(日本)特开2009-117443号公报
发明内容
<本发明要解决的问题>
本公开提供一种技术，其能够在用于放置被处理体及边缘环的载置台上对散热量进行调整。
<用于解决问题的手段>
根据本公开的一个实施方式，提供一种载置台，其用于放置被处理体及边缘环，该载置台包括：第一流路和第二流路，用于使流体在所述载置台的内部流动；分岔部，将所述第一流路的入口与所述第二流路的入口连接；汇合部，将所述第一流路的出口与所述第二流路的出口连接；以及部件，设置在所述分岔部或所述汇合部中的至少任意一者处，并且具有与所述第一流路和所述第二流路连通的开口部。
<发明的效果>
根据一个方面，能够在用于放置被处理体及边缘环的载置台上对散热量进行调整。
附图说明
图1是示出根据一个实施方式的包括载置台的基板处理装置的一个示例的图。
图2是示出根据一个实施方式的载置台的流路的一个示例的图。
图3是示出根据一个实施方式的微调部件及粗调部件的布置的一个示例的图。
图4是示出根据一个实施方式的微调部件的一个示例的图。
图5是示出根据一个实施方式的粗调部件的一个示例的图。
具体实施方式
以下，参照附图对本公开的实施方式中进行说明。需要说明的是，在本说明书及附图中，针对实质上相同的构成部分赋予相同的符号并省略重复的说明。
[基板处理装置的整体结构]
首先，参照图1对基板处理装置1的整体结构的一个示例进行说明。图1是示出根据一个实施方式的基板处理装置1的概要结构的剖面图。需要说明的是，在本实施方式中，以基板处理装置1为RIE(反应性离子蚀刻)型的基板处理装置作为示例进行说明。但是，基板处理装置1也可以是等离子体蚀刻装置或等离子体CVD(化学气相沉积)装置等。
在图1中，基板处理装置1具有接地的圆筒形的处理容器10，该处理容器10由金属制成，例如由铝或不锈钢制成。在该处理容器10的内部布置有用于放置晶圆W的圆板形的载置台11。载置台11具有基台11a和静电卡盘25。静电卡盘25布置在基台11a的上部。基台11a例如由铝制成，并且经由绝缘性的筒形保持部件12由筒形支撑部13支撑，该筒形支撑部13从处理容器10的底部垂直地向上方延伸。
在处理容器10的侧壁与筒形支撑部13之间形成有排气路14，在排气路14的入口或中途配置有环形的挡板15。在处理容器10的底部设置有排气口16，排气装置18经由排气管17与排气口16连接。排气装置18具有干式泵及真空泵，并且将处理容器10内的处理空间减压至预定的真空度。另外，排气管17具有作为可变式蝶形阀的自动压力控制阀(automaticpressure control valve)(以下称为“APC”)，并且APC对处理容器10内的压力自动地进行控制。此外，在处理容器10的侧壁上安装有用于对晶圆W的搬入搬出口19进行开闭的闸阀20。
第一高频电源21a经由第一匹配器22a与载置台11连接。另外，第二高频电源21b经由第二匹配器22b与载置台11连接。第一高频电源21a向载置台11供给预定频率(例如100MHz)的等离子体生成用的高频电力。第二高频电源21b向载置台11供给与第一高频电源21a所输出的高频的频率相比较低的预定频率(例如13MHz)的离子吸引用的高频电力。由此，载置台11还起到下部电极的功能。
在处理容器10的顶板部配置有还起到上部电极的功能的喷头24。由此，向载置台11与喷头24之间施加来自第一高频电源21a和第二高频电源21b的两个频率的高频电压。需要说明的是，喷头24相当于与用于放置晶圆W的载置台11相对的电极部件。
静电卡盘25通过静电吸附力对晶圆W进行吸附。静电卡盘25具有圆板形的中央部25a、以及以包围中央部25a的方式形成的环形的外周部25b。中央部25a相对于外周部25b向图中的上方突出，并且在圆板形的中央部25a的上表面上放置有晶圆W。在外周部25b的上表面上，放置有以呈环形的方式对中央部25a进行包围的边缘环30。中央部25a通过将由导电膜制成的电极26夹在一对介质膜之间而构成。
外周部25b通过将由导电膜构成的电极29夹在一对介质膜之间而构成。由此，电极29以呈环形的方式布置在边缘环30下侧。直流电源27与电极26连接。直流电源28与电极29连接。直流电源27及直流电源28能够对所供给的直流电压的电平及极性进行改变。直流电源27在控制部43的控制下向电极26施加直流电压。直流电源28在控制部43的控制下向电极29施加直流电压。静电卡盘25通过从直流电源27施加于电极26的电压而产生库仑力等静电力，并利用该静电力对晶圆W进行吸附保持。另外，静电卡盘25通过从直流电源28施加于电极29的电压而产生库仑力等静电力，并利用该静电力对边缘环30进行吸附保持。
在载置台11的内部，例如设置有沿圆周方向延伸的制冷剂流路31a、31b。制冷剂流路31a布置在载置台11的中央侧，制冷剂流路31b布置在载置台11的外周侧。制冷剂流路31a是布置在与载置台11的用于放置晶圆W的载置面相对应的位置处的第一流路的一个示例。制冷剂流路31a是布置在与载置台11的用于放置边缘环30的载置面相对应的位置处的第二流路的一个示例。
从冷却器单元32经由配管33、34向制冷剂流路31a、31b循环供给预定温度的制冷剂，例如冷却水。通过该制冷剂的温度、以及针对制冷剂流路31a和31b的制冷剂的分配比率来对静电卡盘25上的晶圆W及边缘环30的处理温度进行控制。
具体地，利用设置在冷却器单元32处的泵使预定温度的制冷剂从冷却器单元32排出，经过配管33，在配管33分岔的分岔部A处分流，并流动至制冷剂流路31a、31b。分岔部A将制冷剂流路31a的入口与制冷剂流路31b的入口连接，并以预定的分流比使制冷剂从制冷剂流路31a的入口IN1和制冷剂流路31b的入口IN2流入各制冷剂流路31a、31b。
制冷剂流路31a形成在基台11a的用于放置晶圆W的载置面侧，并形成为漩涡状。在分岔部A处分流的制冷剂从制冷剂流路31a的入口IN1流入，在漩涡状的制冷剂流路31a中从外周侧向内周方向流动，在中央处折返，从内周侧向外周方向流动，并从制冷剂流路31a的出口OUT1流出。
制冷剂流路31b形成在基台11a的用于放置边缘环30的载置面侧，并形成为环形。在分岔部A处分流的制冷剂从制冷剂流路31b的入口IN2流入，在环形的制冷剂流路31b中流动，并从制冷剂流路31b的出口OUT2流出。
图2是示出根据一个实施方式的基台11a内的冷却剂流路31a、31b的一个示例的图。但是，图2所示的制冷剂流路31a、31b的形状仅为一个示例，不限于此。例如，在图2中，制冷剂流路31a可以形成为使环形的流路连通，也可以是圆板形的空间。另外，尽管制冷剂流路31a的入口IN1的流路与出口OUT1的流路在相同方向上形成，但是不限于此，也可以形成为朝向相反方向。另外，在图2中，尽管制冷剂流路31b形成一条环形的流路，但是也可以是多条流路。
通过该结构，从而使在图1所示的分岔部A处分流的制冷剂以预定的分配比率在制冷剂流路31a、31b中流动，在将制冷剂流路31a的出口OUT1与制冷剂流路31b的出口OUT2连接的配管34的汇合部B处汇合，并返回到冷却器单元32。返回到冷却器单元32的制冷剂在被控制为预定温度的状态下再次从冷却器单元32排出，并在上述路径中循环。
传热气体供给部35经由气体供给管线36与静电卡盘25连接。传热气体供给部35利用到达静电卡盘25的中央部25a的晶圆侧管线36a，向夹在静电卡盘25的中央部25a与晶圆W之间的空间供给传热气体。
气体供给管线36不限于到达静电卡盘25的中央部25a的晶圆侧管线，也可以具有到达静电卡盘25的外周部25b的边缘环侧管线(未图示)。在该结构中，传热气体供给部35可以利用边缘环侧管线，向夹在静电卡盘25的外周部25b与边缘环30之间的空间供给传热气体。作为传热气体，优选使用例如He气等具有导热性的气体。
顶板部的喷头24具有电极板37和电极支撑体38，电极板37的下表面具有多个气体通气孔37a，电极支撑体38以能够拆装的方式对该电极板37进行支撑。在电极支撑体38的内部设置有缓冲室39，在与缓冲室39连通的气体导入口38a处经由气体供给配管41连接有处理气体供给部40。另外，在处理容器10的周围，布置有呈环形或同心状延伸的磁铁42。
基板处理装置1的各构成要素与控制部43连接。例如，排气装置18、第一高频电源21a、第二高频电源21b、直流电源27、28、冷却器单元32、传热气体供给部35以及处理气体供给部40与控制部43连接。控制部43对基板处理装置1的各构成要素进行控制。
控制部43包括中央处理器(CPU)及存储器(存储装置)，读出在存储装置中存储的程序及处理配方，并根据其中设定的工序执行所需的处理。例如，控制部43进行用于对晶圆W和边缘环30进行静电吸附的处理、以及用于对冷却器单元32的温度进行控制的处理。
在基板处理装置1的处理容器10内，通过磁铁42形成朝向一个方向的水平磁场，并通过在载置台11与喷头24之间施加的高频电压形成铅垂方向的RF电场。由此，在处理容器10内进行经由处理气体的磁控放电，并在载置台11的表面附近由处理气体生成等离子体。
在基板处理装置1中，在进行干法蚀刻处理中，首先将闸阀20设定为打开状态并将作为加工对象的晶圆W搬入处理容器10内，并放置在静电卡盘25上。然后，在基板处理装置1中，通过处理气体供给部40将处理气体(例如由C4F8气体、O2气体及Ar气体构成的混合气体)以预定的流量及预定的流量比率导入处理容器10内，并通过排气装置18等将处理容器10内的压力设定为预定值。
此外，基板处理装置1从第一高频电源21a及第二高频电源21b向载置台11供给高频电力。另外，基板处理装置1从直流电源27向静电卡盘25的电极26施加直流电压，以将晶圆W吸附至静电卡盘25。另外，基板处理装置1从直流电源28向静电卡盘25的电极29施加直流电压，以将边缘环30吸附至静电卡盘25。从喷头24排出的处理气体通过高频电力而等离子体化，并通过等离子体中的自由基和离子对晶圆W的表面进行蚀刻等处理。
[制冷剂的分配流量的可变比率]
以往，在分岔部A处流向边缘环30的载置侧的制冷剂与流向晶圆W的载置侧的制冷剂的分配流量为固定比率。然而，随着近年来工艺的多样化，根据在基板处理装置1中进行的工艺而在晶圆W的载置侧与边缘环的载置侧改变散热量，以提高晶圆W及边缘环30的温度控制的精度并进行基板处理变得重要。
因此，在本实施方式中提供了一种新颖的结构，其能够在用于放置晶圆W及边缘环30的载置台11中根据工艺条件、用途及状况使流向晶圆W的载置侧和边缘环30的载置侧的制冷剂的流量比率可变，并能够对散热量进行调整。
具体地，如图3(a)示出的一个示例所示，在配管33的分岔部A以能够拆装的方式布置根据一个实施方式的微调部件50。如图4示出的一个示例所示，微调部件50是中空的筒形部件，并且在其侧面上形成有开口部50a1、50a2。以下，开口部50a1、50a2也被统称为开口部50a。
回到图3，以朝向与制冷剂流路31b的入口IN2连通的流路33a设置开口部50a的方式将微调部件50安装在配管33的分岔部A处。通过该结构，微调部件50具有用于通过开口部50a的面积来对流向制冷剂流路31a和制冷剂流路31b的制冷剂的流量比率进行调整的能够替换的适配器的功能。
在图3的示例中，如图3(b)所示，尽管微调部件50具有两个开口部50a1、50a2，但是在微调部件50中形成的开口部50a的个数、大小、形状以及开口位置不限于图4的示例。例如，开口部50a的数量可以是一个，也可以是两个以上。另外，开口部50a的形状可以是四边形等多边形，可以是圆形，也可以是狭缝。
在本实施方式中，预先准备开口部50a的个数、大小、形状及开口位置不同的多个微调部件50作为替换适配器，并根据工艺条件适当地对布置在分岔部A处的微调部件50进行替换。由此，通过将载置台11自身原样不动地保持并替换微调部件50，从而能够改变针对边缘环30侧的压力损失，并且能够容易地对流向晶圆W的载置侧和边缘环30的载置侧的制冷剂的分流规格进行改变。
如此以能够替换的方式来布置微调部件50。因此，如图3(a)所示，在微调部件50的底部，设置有用于对微调部件50进行固定的O形环52。由此，能够防止制冷剂从安装有微调部件50的配管33与微调部件50之间的间隙泄漏，并防止压力波动。此外，通过以不使微调部件50移动的方式将其固定在配管33内，从而能够防止微调部件50与载置台11摩擦而产生颗粒。
在图3(b)的虚线框内示出了从图3(a)的虚线框内所示的配管33分岔的流路33a及其周围的立体图。在分岔部A的附近且在微调部件50的附近处，在流路33a内布置有粗调部件51a、51b。在本实施方式中，虽然粗调部件51a、51b在与微调部件50的开口部50a1、50a2相对的位置处布置有两个，但不限于此，也可以是一个，或者可以是三个以上。以下，粗调部件51a、51b也被统称为粗调部件51。
但是，粗调部件51优选设置在对从微调部件50的开口部50a流入的制冷剂的流动进行阻碍或干扰的位置处。图5(c)是示出根据一个实施方式的粗调部件51的布置示例的图。在图5(c)的示例中，粗调部件51a布置在与微调部件50的开口部50a1相对的位置，并且粗调部件51b布置在与微调部件50的开口部50a2相对的位置。由此，从微调部件50的开口部50a1、50a2流过流路33a的制冷剂的流动因粗调部件51a、51b而被扰乱，一边扩散一边从流路33a与粗调部件51a、51b之间的间隙流向边缘环30侧的制冷剂流路31b。
相比之下，在图5(a)及图5(b)的比较例中，未布置粗调部件51。因此，如图5(a)所示，当微调部件50的开口部50a较小时，在流路33a的跟前侧(微调部件50侧)产生由阴影线所示的制冷剂等流体未通过的区域。另外，如图5(b)所示，当微调部件50的开口部50a较大时，在流路33a的里侧(与微调部件50相反的相反侧)产生由阴影线所示的制冷剂等流体未通过的区域。
关于该些流体未通过的区域，由于其会在盐水冲洗(brine purge)期间导致制冷剂的液体残留，因此不优选。盐水冲洗是指在从基板处理装置1上拆下静电卡盘25以进行维护时，用N2气体等对制冷剂流路31a、31b和流路33a的内部进行冲洗，以排出制冷剂(盐水)。此时，通过将根据本实施方式的粗调部件51a、51b设置在与微调部件50的开口部50a相对的位置处，从而能够使N2气体等也充分地流过流路33a内的图5(a)及图5(b)中由阴影线所示的部分。因此，能够对制冷剂流路31a、31b和流路33a的内部完全进行冲洗，并在所有流路中防止制冷剂的液体残留。但是，粗调部件51的个数不限于与图5(c)所示的微调部件50的开口部50a的个数相同的数量，只要在对N2气体的流动构成障碍的位置处布置1个或多个即可。
如上所述，在本实施方式中，在用于放置晶圆W和边缘环30的载置台11中，在制冷剂流路31a、31b的分岔部A设置两级的调整机构，即微调部件50和粗调部件51。由此，通过对分流至制冷剂流路31a、31b的制冷剂的流量比率进行调整，从而能够对散热量进行调整。
特别地，从开口部50a的面积不同的多个微调部件50中，选择具有与工艺条件相对应的开口部50a的微调部件50并以能够拆装的方式进行替换。由此，能够对流向晶圆W侧和边缘环30侧的制冷剂的调整范围进行改变，并且能够实现与工艺条件一致的晶圆W侧和边缘环30侧的温度控制。
另外，通过设置粗调部件51，从而能够防止盐水冲洗中的制冷剂的液体残留。需要说明的是，微调部件50是具有与制冷剂流路31a和制冷剂流路31b连通的开口部的部件的一个示例。在本实施方式中，虽然将微调部件50设置在分岔部A处，但是不限于此，可以设置在分岔部A或汇合部B中的至少任意一者处。
粗调部件51是设置在分岔部A或汇合部B中的至少任意一者处突起状部件的一个示例。在本实施方式中，虽然将粗调部件51设置在分岔部A处，但是不限于此，可以设置在分岔部A或汇合部B中的至少任意一者处。
更优选在分岔部A或汇合部B中的任意一者处设置微调部件50和粗调部件51两者，并在分岔部A或汇合部B中的任意一者处进行分流控制。例如，在图3中，微调部件50和粗调部件51均设置在分岔部A的流路33a中，而未设置在汇合部B的流路34a中。然而，微调部件50和粗调部件51的布置不限于图3所示的结构，也可以是将微调部件50和粗调部件51设置在汇合部B的流路34a中，而不设置在分岔部A的流路33a中的结构。
最好不将微调部件50设置在分岔部A或汇合部B两者处的原因在于：如果将其设置在两者处，则会在两者处对制冷剂的流量比率进行调整，难以将其控制为指定的流量比率。另外，其原因在于：如果将微调部件50和粗调部件51分别布置在分岔部A和汇合部B，则无法通过粗调部件51来阻碍从微调部件50的开口部50a流出的制冷剂的流动，从而有时会在盐水冲洗中产生液体残留。
于在盐水冲洗中未产生液体残留的形状的流路33a、34a的情况下，可以将微调部件50布置在分岔部A或汇合部B中的至少任意一者处，并且不设置粗调部件51。此时，可以将粗调部件51设置在未布置有微调部件50的分岔部A或汇合部B处。也可以将粗调部件51布置在分岔部A或汇合部B中的至少任意一者处，并且不设置微调部件50。
[变形例]
与该载置台11的结构同样地，可以在喷头24处设置向其内周侧和外周侧分岔的制冷剂流路，并在该制冷剂流路的分岔部或汇合部中的至少任意一者处设置微调部件。另外，可以在喷头24的制冷剂流路的分岔部或汇合部中的至少任意一者处设置粗调部件。
该结构的喷头24是与用于放置晶圆W的载置台11相对的电极部件的一个示例，并且可以包括用于在该电极部件的内部使流体流过的第一流路(例如喷头24的内周侧的制冷剂流路)和第二流路(例如喷头24的外周侧的制冷剂流路)、将该第一流路的入口与该第二流路的入口连接的分岔部、将该第一流路的出口与该第二流路的出口连接的汇合部、以及设置在分岔部或汇合部中的至少任意一者处并具有与该第一流路和该第二流路连通的开口部的部件(例如微调部件)。此外，喷头24也可以具有作为在分岔部或汇合部中的至少任意一者处设置的突起状部件的一个示例的粗调部件51。
在本实施方式中，制冷剂在第一流路和第二流路中流动。然而，在第一流路和第二流路中流动的流体不限于液体，也可以是气体。换言之，微调部件50和粗调部件51可以布置在设置有流体流路的部件的分岔部或汇合部处，例如也可以用于载置台11内的使He气体流动的流路。例如，假设图1中的使He气体流过的气体供给管线为分岔成到达静电卡盘25的中央部25a的晶圆侧管线36a和到达未图示的周边部25b的边缘环侧管线的构造。在此情况下，可以在两个气体管线的分岔部处布置微调部件50或粗调部件51中的至少任意一者。由此，能够对流向晶圆侧管线36a和边缘环侧管线的He气体的分流比可变地进行调整。
另外，在图1的缓冲室39具有内周侧的腔室和外周侧的腔室的情况下，可以在分岔至内周侧的腔室和外周侧的腔室的分岔部处设置微调部件50或粗调部件51中的至少任意一者。由此，能够使从处理气体供给部40供给的处理气体以预定的流量比率分流至内周侧的腔室和外周侧的腔室。
如上所述，根据本实施方式，能够对在用于放置晶圆和边缘环30的载置台11中循环的制冷剂或气体的流向晶圆侧和边缘环侧的流量比率进行控制，并对晶圆侧和边缘环侧的散热量或传热量进行调整。
另外，根据本实施方式的变形例，能够对在喷头24中循环的制冷剂或流向缓冲室39的内周侧的腔室和外周侧的腔室的气体的流量比率进行控制，并对喷头24的内周侧和外周侧的散热量进行调整。
应当认为，根据本次公开的一个实施方式的载置台及电极部件在所有方面均是示例性的，而非限制性的。在不脱离所附的权利要求书及其主旨的情况下，可以对上述实施方式以各种方式进行变形及改进。对于上述多个实施方式所记载的内容，在不产生矛盾的情况下也可以采用其他结构，并且在不产生矛盾的情况下可以进行组合。
本公开的处理装置可以应用于电容耦合等离子体(CCP：Capacitively CoupledPlasma)、电感耦合等离子体(ICP：Inductively Coupled Plasma)、径向线缝隙天线(RLSA：Radial Line Slot Antenna)、电子回旋共振等离子体(ECR：Electron CyclotronResonance Plasma)、以及螺旋波等离子体(HWP：Helicon Wave Plasma)中的任意类型的装置。
在本说明书中，以晶圆W作为基板的一个示例进行了说明。然而，基板不限于此，也可以是用于FPD(Flat Panel Display：平板显示器)的各种基板、印刷电路板等。
本国际申请以2018年7月19日提交的日本发明专利申请2018-136095号作为要求优先权的基础，本国际申请援引其全部内容。
符号说明
1 基板处理装置，
10 处理容器，
11 载置台，
11a 基台，
21a 第一高频电源，
21b 第二高频电源，
24 喷头，
25 静电卡盘，
25a 中央部，
25b 外周部，
26 电极，
27 直流电源，
28 直流电源，
29 电极，
30 边缘环，
31a、31b 制冷剂流路，
32 冷却器单元，
43 控制部，
50 微调部件，
50a1、50a2 开口部，
51a、51b、51 粗调部件，
52 O形环，
A 分岔部，
B 汇合部，
W 晶圆。

Claims (12)

1.一种载置台，其用于放置被处理体及边缘环，该载置台包括：
第一流路和第二流路，用于使流体在所述载置台的内部流动；
分岔部，将所述第一流路的入口与所述第二流路的入口连接；
汇合部，将所述第一流路的出口与所述第二流路的出口连接；以及
部件，设置在所述分岔部或所述汇合部中的至少任意一者处，并且具有与所述第一流路和所述第二流路连通的开口部。
2.一种载置台，其用于放置被处理体及边缘环，该载置台包括：
第一流路和第二流路，用于使流体在所述载置台的内部流动；
分岔部，将所述第一流路的入口与所述第二流路的入口连接；
汇合部，将所述第一流路的出口与所述第二流路的出口连接；以及
突起状部件，设置在所述分岔部或所述汇合部中的至少任意一者处。
3.根据权利要求1所述的载置台，包括：
突起状部件，设置在所述分岔部或所述汇合部中的至少任意一者处。
4.根据权利要求1或3所述的载置台，其中，
所述部件具有的开口部存在多个。
5.根据权利要求1、3及4中任一项所述的载置台，其中，
具有开口部的所述部件以能够拆装的方式设置。
6.根据权利要求2或3所述的载置台，其中，
所述突起状部件存在多个。
7.根据权利要求3所述的载置台，其中，
具有开口部的所述部件和所述突起状部件设置在所述分岔部或所述汇合部中的任意一者处。
8.根据权利要求7所述的载置台，其中，
所述突起状部件设置在对从所述部件具有的开口部流入的流体的流动进行阻碍的位置处。
9.根据权利要求1至8中任一项所述的载置台，其中，
所述第一流路布置在与所述载置台的载置面之中的用于放置被处理体的载置面相对应的位置处。
10.根据权利要求1至9中任一项所述的载置台，其中，
所述第二流路布置在与所述载置台的载置面之中的用于放置所述边缘环的载置面相对应的位置处。
11.一种电极部件，与用于放置被处理体的载置台相对，该电极部件包括：
第一流路和第二流路，用于使流体在所述电极部件的内部流动；
分岔部，将所述第一流路的入口与所述第二流路的入口连接；
汇合部，将所述第一流路的出口与所述第二流路的出口连接；以及
部件，设置在所述分岔部或所述汇合部中的至少任意一者处，并且具有与所述第一流路和所述第二流路连通的开口部。
12.根据权利要求11所述的电极部件，包括：
突起状部件，设置在所述分岔部或所述汇合部中的至少任意一者处。
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