JP2011119706A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP2011119706A JP2011119706A JP2010243369A JP2010243369A JP2011119706A JP 2011119706 A JP2011119706 A JP 2011119706A JP 2010243369 A JP2010243369 A JP 2010243369A JP 2010243369 A JP2010243369 A JP 2010243369A JP 2011119706 A JP2011119706 A JP 2011119706A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H01L29/51—Insulating materials associated therewith
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
【解決手段】不対結合手に代表される欠陥を多く含む絶縁層を、酸素過剰な混合領域、又は酸素過剰な酸化物絶縁層を間に介して、酸化物半導体層上に形成し、酸化物半導体層に含まれる水素や水分(水素原子や、H2Oなど水素原子を含む化合物)などの不純物を、酸素過剰な混合領域、又は酸素過剰な酸化物絶縁層を通過させて欠陥を含む絶縁層に拡散させ、上記酸化物半導体層中の不純物濃度を低減する。
【選択図】図1
Description
本実施の形態の半導体装置及び半導体装置の作製方法の一形態を、図1を用いて説明する。本実施の形態で示す半導体装置は薄膜トランジスタである。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態を適用することができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ380は、実施の形態1の薄膜トランジスタ110として用いることができる。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの例を示す。
本実施の形態は、本明細書で開示する半導体装置に適用できる薄膜トランジスタの例を示す。
本実施の形態では、実施の形態1乃至9に示した半導体装置において、薄膜トランジスタと、エレクトロルミネッセンスを利用する発光素子とを用い、アクティブマトリクス型の発光表示装置を作製する一例を示す。
本実施の形態では、発光表示パネル(発光パネルともいう)の外観及び断面について、図11(A)を用いて説明する。図11は、第1の基板上に形成された薄膜トランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図11(B)は、図11(A)のH−Iにおける断面図に相当する。
半導体装置の一形態に相当する液晶表示パネルの外観及び断面について、図8を用いて説明する。図8は、薄膜トランジスタ4010、4011、及び液晶素子4013を、第1の基板4001との間にシール材4005によって封止した、パネルの平面図であり、図8(B)は、図8(A)または図8(C)のM−Nにおける断面図に相当する。
本実施の形態では、本発明の一実施の形態である半導体装置として電子ペーパーの例を示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図16に示す。
102 ゲート絶縁層
103 保護絶縁層
110 薄膜トランジスタ
111 ゲート電極層
112 酸化物半導体層
116 絶縁層
119 混合領域
120 酸化物半導体膜
121 酸化物半導体層
130 薄膜トランジスタ
132 酸化物半導体層
139 酸化物絶縁層
140 基板
141 酸化物半導体層
142 ゲート絶縁層
143 保護絶縁層
146 絶縁層
150 基板
151 ゲート電極層
152 ゲート絶縁層
153 保護絶縁層
160 薄膜トランジスタ
162 酸化物半導体層
165b ドレイン電極層
166 絶縁層
171 酸化物半導体層
173 絶縁層
179 混合領域
180 薄膜トランジスタ
181 ゲート電極層
183 保護絶縁層
190 薄膜トランジスタ
192 酸化物半導体層
196 絶縁層
199 混合領域
300 基板
302 ゲート絶縁層
303 保護絶縁層
310 薄膜トランジスタ
311 ゲート電極層
312 酸化物半導体層
313 チャネル形成領域
316 絶縁層
319 酸化物絶縁層
320 基板
322 ゲート絶縁層
323 保護絶縁層
330 酸化物半導体膜
331 酸化物半導体層
332 酸化物半導体層
360 薄膜トランジスタ
361 ゲート電極層
362 酸化物半導体層
363 チャネル形成領域
366 絶縁層
369 酸化物絶縁層
370 基板
373 保護絶縁層
380 薄膜トランジスタ
381 ゲート電極層
382 酸化物半導体層
386 絶縁層
389 酸化物絶縁層
580 基板
581 薄膜トランジスタ
583 絶縁層
584 保護絶縁層
585 絶縁層
587 電極層
588 電極層
594 キャビティ
595 充填材
596 対向基板
115a ソース電極層
115b ドレイン電極層
142a ゲート絶縁層
142b ゲート絶縁層
1600 携帯電話機
1601 筐体
1602 表示部
1603 操作ボタン
1604 外部接続ポート
1605 スピーカ
165a ソース電極層
166b ドレイン電極層
1800 筐体
1801 筐体
1802 表示パネル
1803 スピーカ
1804 マイクロフォン
1805 操作キー
1806 ポインティングデバイス
1807 カメラ用レンズ
1808 外部接続端子
1810 キーボード
1811 外部メモリスロット
195a ソース電極層
195b ドレイン電極層
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
3001 照明装置
3002 卓上照明器具
314a 高抵抗ソース領域
314b 高抵抗ドレイン領域
315a ソース電極層
315b ドレイン電極層
364a 高抵抗ソース領域
364b 高抵抗ドレイン領域
365a ソース電極層
365b ドレイン電極層
372a ゲート絶縁層
372b ゲート絶縁層
385a ソース電極層
385b ドレイン電極層
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4040 導電層
4041 絶縁層
4042 保護絶縁層
4043 酸化物絶縁層
4501 基板
4502 画素部
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極
4515 接続端子電極
4516 端子電極
4517 電極
4519 異方性導電膜
4520 隔壁
4540 導電層
4542 絶縁層
4543 オーバーコート層
4544 絶縁層
4545 カラーフィルタ層
4550 配線層
4551 絶縁層
590a 黒色領域
590b 白色領域
1606 マイク
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 電極
7004 EL層
7005 電極
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 電極
7014 EL層
7015 電極
7016 遮蔽膜
7017 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 電極
7024 EL層
7025 電極
7026 電極
7027 導電膜
7029 隔壁
7031 絶縁層
7032 絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7036 平坦化絶縁層
7042 絶縁層
7043 カラーフィルタ層
7044 オーバーコート層
7045 保護絶縁層
7051 絶縁層
7052 保護絶縁層
7053 平坦化絶縁層
7055 絶縁層
7056 平坦化絶縁層
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
1603a 操作ボタン
4503a 信号線駆動回路
4504a 走査線駆動回路
4518a FPC
Claims (13)
- 基板上にゲート電極層と、前記ゲート電極層上のゲート絶縁層と、前記ゲート絶縁層上の酸化物半導体層と、前記酸化物半導体層上のソース電極層及びドレイン電極層と、前記酸化物半導体層、前記ソース電極層及びドレイン電極層上に前記酸化物半導体層の一部と接する欠陥を含む絶縁層を有し、
前記酸化物半導体層と前記欠陥を含む絶縁層との間に酸素過剰の酸化物絶縁層が設けられることを特徴とする半導体装置。 - 請求項1において、前記酸素過剰の酸化物絶縁層は膜厚0.1nm乃至30nmであることを特徴とする半導体装置。
- 基板上にゲート電極層と、前記ゲート電極層上のゲート絶縁層と、前記ゲート絶縁層上の酸化物半導体層と、前記酸化物半導体層上のソース電極層及びドレイン電極層と、前記酸化物半導体層、前記ソース電極層及びドレイン電極層上に前記酸化物半導体層の一部と接する欠陥を含む絶縁層を有し、
前記酸化物半導体層と前記欠陥を含む絶縁層の界面に酸素過剰の混合領域が設けられ、
前記欠陥を含む絶縁層はシリコンを含み、
前記酸素過剰の混合領域は、酸素、シリコン、及び前記酸化物半導体層に含まれる金属元素を少なくとも一種類以上含むことを特徴とする半導体装置。 - 請求項1において、前記混合領域は膜厚0.1nm乃至30nmであることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、前記欠陥を含む絶縁層を覆う保護絶縁層を有することを特徴とする半導体装置。
- 請求項1乃至5のいずれか一項において、前記酸化物半導体層は、インジウム、ガリウム、又は亜鉛を含むことを特徴とする半導体装置。
- 基板上にゲート電極層及び該ゲート電極層を覆うゲート絶縁層を形成した後、該基板を減圧状態に保持された処理室に導入し、
前記処理室内の残留水分を除去しつつ水素及び水分が除去されたスパッタガスを導入し、前記処理室内に装着された金属酸化物のターゲットを用いて前記ゲート絶縁層上に酸化物半導体層を形成し、
前記酸化物半導体層上にソース電極層及びドレイン電極層を形成し、
前記ソース電極層及び前記ドレイン電極層上に前記酸化物半導体層に接する酸素過剰の酸化物絶縁層をスパッタリング法で形成し、
前記酸素過剰の酸化物絶縁層上に欠陥を含む絶縁層をスパッタリング法で形成し、
該基板を加熱して前記酸化物半導体層中に含まれる水素若しくは水分を、前記酸素過剰の酸化物絶縁層を通過させて前記欠陥を含む絶縁層側に拡散させることを特徴とする半導体装置の作製方法。 - 請求項7において、前記酸素過剰の酸化物絶縁層及び前記欠陥を含む絶縁層を形成する処理室をクライオポンプを用いて排気することで残留水分を除去することを特徴とする半導体装置の作製方法。
- 基板上にゲート電極層及び該ゲート電極層を覆うゲート絶縁層を形成した後、該基板を減圧状態に保持された処理室に導入し、
前記処理室内の残留水分を除去しつつ水素及び水分が除去されたスパッタガスを導入し、前記処理室内に装着された金属酸化物のターゲットを用いて前記ゲート絶縁層上に酸化物半導体層を形成し、
前記酸化物半導体層上にソース電極層及びドレイン電極層を形成し、
前記ソース電極層及び前記ドレイン電極層上に前記酸化物半導体層に接する酸素過剰の混合領域、及び該混合領域を介して前記酸化物半導体層に積層する欠陥を含む絶縁層をスパッタリング法で形成し、
該基板を加熱して前記酸化物半導体層中に含まれる水素若しくは水分を、前記酸素過剰の混合領域を通過させて前記欠陥を含む絶縁層側に拡散させることを特徴とする半導体装置の作製方法。 - 請求項9において、前記酸素過剰の混合領域及び前記欠陥を含む絶縁層を形成する処理室は、クライオポンプを用いて排気することで残留水分を除去することを特徴とする半導体装置の作製方法。
- 請求項7乃至10において、前記酸化物半導体層を形成する前記処理室は、クライオポンプを用いて排気することで残留水分を除去することを特徴とする半導体装置の作製方法。
- 請求項7乃至11のいずれか一項において、前記欠陥を含む絶縁層上に保護絶縁層を形成することを特徴とする半導体装置の作製方法。
- 請求項7乃至12のいずれか一項において、前記金属酸化物のターゲットは、インジウム、ガリウム、又は亜鉛を含む金属酸化物であることを特徴とする半導体装置の作製方法。
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JP5963825B2 (ja) | 2016-08-03 |
KR102142450B1 (ko) | 2020-08-10 |
KR20120102653A (ko) | 2012-09-18 |
JP6277228B2 (ja) | 2018-02-07 |
TWI544608B (zh) | 2016-08-01 |
CN104867982B (zh) | 2018-08-03 |
TWI605574B (zh) | 2017-11-11 |
US20140367682A1 (en) | 2014-12-18 |
CN102668096B (zh) | 2015-04-29 |
CN104867982A (zh) | 2015-08-26 |
JP5639850B2 (ja) | 2014-12-10 |
TW201631746A (zh) | 2016-09-01 |
JP2018107454A (ja) | 2018-07-05 |
TW201133802A (en) | 2011-10-01 |
JP2016197735A (ja) | 2016-11-24 |
CN102668096A (zh) | 2012-09-12 |
JP6953570B2 (ja) | 2021-10-27 |
JP6674482B2 (ja) | 2020-04-01 |
US10566459B2 (en) | 2020-02-18 |
EP2494601A4 (en) | 2016-09-07 |
KR101928402B1 (ko) | 2018-12-12 |
JP2015057832A (ja) | 2015-03-26 |
JP2020115544A (ja) | 2020-07-30 |
US20180053857A1 (en) | 2018-02-22 |
EP2494601A1 (en) | 2012-09-05 |
US20110101335A1 (en) | 2011-05-05 |
KR20180132979A (ko) | 2018-12-12 |
KR20180000744A (ko) | 2018-01-03 |
WO2011052384A1 (en) | 2011-05-05 |
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