JP2013012603A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000010408 film Substances 0.000 abstract description 158
- 239000010409 thin film Substances 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 67
- 229910052581 Si3N4 Inorganic materials 0.000 description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000002356 single layer Substances 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910007541 Zn O Inorganic materials 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 6
- 229910017767 Cu—Al Inorganic materials 0.000 description 6
- 229910001080 W alloy Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】半導体装置であって、ゲート電極と、前記ゲート電極の一方の表面を覆うように配置されたゲート絶縁膜と、前記ゲート絶縁膜に重ねて配置された酸化物半導体と、前記酸化物半導体に重ねて配置されたソース電極及びドレイン電極と、前記ソース電極及びドレイン電極と、前記ゲート絶縁膜層との間に、前記酸化物半導体に接するように配置された酸素原子含有膜と、を有する。
【選択図】図4
Description
次に、本発明の第2の実施形態を説明する。上記第1の実施の形態がいわゆるボトムゲート型薄膜トランジスタ構造を有するに対し、本実施の形態においては、いわゆるトップゲート型薄膜トランジスタ構造を有する点が、主に、異なる。なお、下記において、第1の実施形態と同様である点については説明を省略する。
Claims (11)
- ゲート電極と、
前記ゲート電極の一方の表面を覆うように配置されたゲート絶縁膜と、
前記ゲート絶縁膜に重ねて配置された酸化物半導体と、
前記酸化物半導体に重ねて配置されたソース電極及びドレイン電極と、
前記ソース電極及びドレイン電極と、前記ゲート絶縁膜層との間に、前記酸化物半導体に接するように配置された酸素原子含有膜と、
を有する半導体装置。 - 前記酸化物半導体は、第1の酸化物半導体層と、第2の酸化物半導体層を含み、
前記酸素原子含有膜は、前記第1の酸化物半導体層と、前記第2の酸化物半導体層との間に配置されたことを特徴とする請求項1記載の半導体装置。 - 前記酸素原子含有膜は、水分を含有した水分含有膜であることを特徴とする請求項1または2に記載の半導体装置。
- 前記水分含有膜の水分濃度は、前記酸化物半導体に含まれる水分濃度よりも高いことを特徴とする請求項3記載の半導体装置。
- 前記水分含有膜の水分濃度は、1atm%乃至30atm%であることを特徴とする請求項3または4記載の半導体装置。
- 前記酸素原子含有膜は、前記酸化物半導体の厚さの2割から8割の間に設けられることを特徴とする請求項1乃至5のいずれかに記載の半導体装置。
- 前記酸素原子含有膜は、不連続膜であることを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
- 前記酸化物半導体の厚さは、5nm乃至200nmであることを特徴とする請求項1乃至7のいずれかに記載の半導体装置。
- 前記第1の酸化物半導体層の材料は、前記第2の酸化物半導体層の材料と異なることを特徴とする請求項1乃至8のいずれかに記載の半導体装置。
- 基板上に少なくとも第1の電極層を形成し、
前記少なくとも第1の電極層が形成された基板に、酸化物半導体層と酸素原子含有膜を含むチャネル層を形成し、
前記チャネル層が形成された基板に、少なくとも第2の電極層を形成し、
前記酸素原子含有膜に含まれる酸素原子を前記酸化物半導体層に拡散する、
ことを特徴とする半導体装置の製造方法。 - 前記酸化物半導体層は、第1の酸化物半導体層と第2の酸化物半導体層を含み、
前記第1の電極層が形成された基板に、少なくとも前記第1の酸化物半導体層を形成し、
前記第1の酸化物半導体層上に、前記酸素原子含有膜を形成し、
前記酸素原子含有膜上に、前記第2の酸化物半導体層を形成する、
ことにより前記チャネル層を形成することを特徴とする請求項10記載の半導体装置の製造方法。
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JP2011144698A JP5827045B2 (ja) | 2011-06-29 | 2011-06-29 | 半導体装置の製造方法 |
US13/533,304 US20130001558A1 (en) | 2011-06-29 | 2012-06-26 | Semiconductor device and manufacturing method of semiconductor device |
US14/734,569 US20150279699A1 (en) | 2011-06-29 | 2015-06-09 | Semiconductor device and manufacturing method of semiconductor device |
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JP2011144698A JP5827045B2 (ja) | 2011-06-29 | 2011-06-29 | 半導体装置の製造方法 |
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JP2015203965A Division JP6097808B2 (ja) | 2015-10-15 | 2015-10-15 | 半導体装置及び半導体装置の製造方法 |
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JP2013012603A true JP2013012603A (ja) | 2013-01-17 |
JP2013012603A5 JP2013012603A5 (ja) | 2014-02-13 |
JP5827045B2 JP5827045B2 (ja) | 2015-12-02 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015037164A (ja) * | 2013-08-16 | 2015-02-23 | 国立大学法人東京工業大学 | 半導体膜、薄膜トランジスタ、およびこれらの製造方法 |
JP2018190993A (ja) * | 2013-01-21 | 2018-11-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US10461100B2 (en) | 2017-05-15 | 2019-10-29 | Japan Display Inc. | Display device having a different type of oxide semiconductor transistor |
WO2020245925A1 (ja) * | 2019-06-04 | 2020-12-10 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法、ならびに表示装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014181785A1 (en) * | 2013-05-09 | 2014-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN105280717B (zh) * | 2015-09-23 | 2018-04-20 | 京东方科技集团股份有限公司 | Tft及其制作方法、阵列基板及显示装置 |
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JP2010027808A (ja) * | 2008-07-17 | 2010-02-04 | Ricoh Co Ltd | 電界効果型トランジスタ及びその製造方法 |
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2011
- 2011-06-29 JP JP2011144698A patent/JP5827045B2/ja active Active
-
2012
- 2012-06-26 US US13/533,304 patent/US20130001558A1/en not_active Abandoned
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- 2015-06-09 US US14/734,569 patent/US20150279699A1/en not_active Abandoned
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Cited By (4)
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JP2018190993A (ja) * | 2013-01-21 | 2018-11-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2015037164A (ja) * | 2013-08-16 | 2015-02-23 | 国立大学法人東京工業大学 | 半導体膜、薄膜トランジスタ、およびこれらの製造方法 |
US10461100B2 (en) | 2017-05-15 | 2019-10-29 | Japan Display Inc. | Display device having a different type of oxide semiconductor transistor |
WO2020245925A1 (ja) * | 2019-06-04 | 2020-12-10 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法、ならびに表示装置 |
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