JP2016086172A - 半導体装置、該半導体装置を有する表示装置 - Google Patents
半導体装置、該半導体装置を有する表示装置 Download PDFInfo
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- JP2016086172A JP2016086172A JP2015210307A JP2015210307A JP2016086172A JP 2016086172 A JP2016086172 A JP 2016086172A JP 2015210307 A JP2015210307 A JP 2015210307A JP 2015210307 A JP2015210307 A JP 2015210307A JP 2016086172 A JP2016086172 A JP 2016086172A
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- oxide semiconductor
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Classifications
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Abstract
【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上の第1の絶縁膜と、第1の絶縁膜上の酸化物半導体膜と、酸化物半導体膜に電気的に接続されるソース電極と、酸化物半導体膜に電気的に接続されるドレイン電極と、酸化物半導体膜、ソース電極、及びドレイン電極上の第2の絶縁膜と、第2の絶縁膜上の第1の金属酸化膜と、第1の金属酸化膜上の第2の金属酸化膜と、を有し、第1の金属酸化膜は、酸化物半導体膜と同一の金属元素を少なくとも一つ有し、第2の金属酸化膜は、第1の金属酸化膜と、混合する領域を有する。
【選択図】図1
Description
本実施の形態では、本発明の一態様の半導体装置について、図1乃至図18を参照して説明する。
図1(A)は、本発明の一態様の半導体装置であるトランジスタ100の上面図であり、図1(B)は、図1(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図1(C)は、図1(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。なお、図1(A)において、煩雑になることを避けるため、トランジスタ100の構成要素の一部(ゲート絶縁膜として機能する絶縁膜等)を省略して図示している。また、一点鎖線X1−X2方向をトランジスタのチャネル長方向、一点鎖線Y1−Y2方向をトランジスタのチャネル幅方向と呼称する場合がある。なお、トランジスタの上面図においては、以降の図面においても図1(A)と同様に、構成要素の一部を省略して図示する場合がある。
基板102の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板102として用いてもよい。また、シリコンや炭化シリコンなどを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板102として用いてもよい。なお、基板102として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
ゲート電極として機能する導電膜104、及びソース電極として機能する導電膜112a、及びドレイン電極として機能する導電膜112bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ100のゲート絶縁膜として機能する絶縁膜106、107としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を、それぞれ用いることができる。なお、絶縁膜106、107の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜108は、Inと、Znと、M(Mは、Ti、Ga、Y、Zr、La、Ce、Nd、SnまたはHfを表す)とを有する。代表的には、酸化物半導体膜108は、In−Ga酸化物、In−Zn酸化物、In−M−Zn酸化物を用いることができる。とくに、酸化物半導体膜108としては、In−M−Zn酸化物を用いると好ましい。
絶縁膜114、116は、保護絶縁膜としての機能を有する。絶縁膜114、116は、酸素を有する。また、絶縁膜114は、酸素を透過することのできる絶縁膜である。なお、絶縁膜114は、後に形成する絶縁膜116を形成する際の、酸化物半導体膜108へのダメージ緩和膜としても機能する。
金属酸化膜132は、酸素を透過させる機能を有する。金属酸化膜132を設けることで、絶縁膜114、116中に好適に酸素を導入することができる。さらに、金属酸化膜132は、酸素導入時以外は、酸素の放出を抑制する機能を有する。
次に、図1(A)(B)(C)に示すトランジスタ100と異なる構成例について、図3(A)(B)(C)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、図3(A)(B)(C)に示すトランジスタ150と異なる構成例について、図4(A)(B)(C)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、図1(A)(B)(C)に示すトランジスタ100と異なる構成例について、図5(A)(B)(C)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、図1(A)(B)(C)に示すトランジスタ100と異なる構成例について、図6(A)(B)(C)(D)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、本発明の一態様の半導体装置であるトランジスタ100の作製方法について、図8乃至図10を用いて説明する。なお、図8乃至図10は、半導体装置の作製方法を説明する断面図である。
次に、本発明の一態様の半導体装置である図1に示すトランジスタ100の作製方法の変形例について、図11(A)(B)(C)を用いて説明する。なお、図11(A)(B)(C)は、半導体装置の作製方法を説明する断面図である。
ここで、絶縁膜114、116中にハロゲン元素139が導入される場合の概念について、図18を用いて説明を行う。
次に、図18(A)に示す、絶縁膜116として酸化シリコンを用い、当該酸化シリコンにハロゲン元素としてフッ素を導入する場合の概念について、図18(B)(C)(D)を用いて以下説明する。
次に、本発明の一態様の半導体装置である図3に示すトランジスタ150の作製方法について、図12及び図13を用いて説明する。なお、図12及び図13は、半導体装置の作製方法を説明する断面図である。
次に、本発明の一態様の半導体装置であるトランジスタ170の作製方法について、図14及び図15を用いて説明する。なお、図14(A)(C)及び図15(A)(C)は、作製工程における、トランジスタ170のチャネル長方向の断面図であり、図14(B)(D)及び図15(B)(D)は、作製工程における、トランジスタ170のチャネル幅方向の断面図である。
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体膜の構成について詳細に説明する。まず、酸化物半導体膜の有しうる構造について以下説明する。
CAAC−OSは、c軸配向した複数の結晶部(ペレットともいう。)を有する酸化物半導体の一つである。なお、CAAC−OSを、CANC(C−Axis Aligned nanocrystals)を有する酸化物半導体と呼ぶこともできる。
nc−OSは、高分解能TEM像において、結晶部を確認することのできる領域と、明確な結晶部を確認することのできない領域と、を有する。nc−OSに含まれる結晶部は、1nm以上100nm以下、または1nm以上10nm以下の大きさであることが多い。特に、1nm以上10nm以下、または1nm以上3nm以下の微結晶であるナノ結晶を有する酸化物半導体を、nc−OSと呼ぶ。また、nc−OSは、例えば、高分解能TEM像では、結晶粒界を明確に確認できない場合がある。なお、ナノ結晶は、CAAC−OSにおけるペレットと同じ起源を有する可能性がある。そのため、以下ではnc−OSの結晶部をペレットと呼ぶ場合がある。
非晶質酸化物半導体は、膜中における原子配列が不規則であり、結晶部を有さない酸化物半導体である。石英のような無定形状態を有する酸化物半導体が一例である。
a−like OSは、高分解能TEM像において鬆(ボイドともいう。)が観察される場合がある。また、高分解能TEM像において、明確に結晶部を確認することのできる領域と、結晶部を確認することのできない領域と、を有する。
以下では、CAAC−OSの成膜方法の一例について説明する。
次に、CAAC−OSの成膜モデルについて詳細に説明する。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図27を用いて説明を行う。
図27(A)に示す表示装置は、表示素子の画素を有する領域(以下、画素部502という)と、画素部502の外側に配置され、画素を駆動するための回路を有する回路部(以下、駆動回路部504という)と、素子の保護機能を有する回路(以下、保護回路506という)と、端子部507と、を有する。なお、保護回路506は、設けない構成としてもよい。
本実施の形態においては、本発明の一態様の半導体装置を有する表示装置、及び該表示装置に入力装置を取り付けた電子機器について、図28乃至図33を用いて説明を行う。
なお、本実施の形態において、電子機器の一例として、表示装置と、入力装置とを合わせたタッチパネル2000について説明する。また、入力装置の一例として、タッチセンサを用いる場合について説明する。
次に、図29(A)(B)を用いて、表示装置2501の詳細について説明する。図29(A)(B)は、図28(B)に示す一点鎖線X1−X2間の断面図に相当する。
まず、表示素子としてEL素子を用いる構成について、図29(A)を用いて以下説明を行う。なお、以下の説明においては、白色の光を射出するEL素子を適用する場合について説明するが、EL素子はこれに限定されない。例えば、隣接する画素毎に射出する光の色が異なるように、発光色が異なるEL素子を適用してもよい。
次に、表示素子として、液晶素子を用いる構成について、図29(B)を用いて以下説明を行う。なお、以下の説明においては、外光を反射して表示する反射型の液晶表示装置について説明するが、液晶表示装置はこれに限定されない。例えば、光源(バックライト、サイドライト等)を設けて、透過型の液晶表示装置、または反射型と透過型の両方の機能を備える液晶表示装置としてもよい。
次に、図30を用いて、タッチセンサ2595の詳細について説明する。図30は、図28(B)に示す一点鎖線X3−X4間の断面図に相当する。
次に、図31(A)を用いて、タッチパネル2000の詳細について説明する。図31(A)は、図28(A)に示す一点鎖線X5−X6間の断面図に相当する。
次に、タッチパネルの駆動方法の一例について、図32を用いて説明を行う。
また、図32(A)ではタッチセンサとして配線の交差部に容量2603のみを設けるパッシブ型のタッチセンサの構成を示したが、トランジスタと容量とを有するアクティブ型のタッチセンサとしてもよい。アクティブ型のタッチセンサに含まれるセンサ回路の一例を図33に示す。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図34及び図35を用いて説明を行う。
図34に示す表示モジュール8000は、上部カバー8001と下部カバー8002との間に、FPC8003に接続されたタッチパネル8004、FPC8005に接続された表示パネル8006、バックライト8007、フレーム8009、プリント基板8010、バッテリ8011を有する。
図35(A)乃至図35(G)は、電子機器を示す図である。これらの電子機器は、筐体9000、表示部9001、スピーカ9003、操作キー9005(電源スイッチ、又は操作スイッチを含む)、接続端子9006、センサ9007(力、変位、位置、速度、加速度、角速度、回転数、距離、光、液、磁気、温度、化学物質、音声、時間、硬度、電場、電流、電圧、電力、放射線、流量、湿度、傾度、振動、におい又は赤外線を測定する機能を含むもの)、マイクロフォン9008、等を有することができる。
100A トランジスタ
100B トランジスタ
102 基板
104 導電膜
106 絶縁膜
107 絶縁膜
108 酸化物半導体膜
108a 酸化物半導体膜
108b 酸化物半導体膜
108c 酸化物半導体膜
112a 導電膜
112b 導電膜
114 絶縁膜
116 絶縁膜
120 導電膜
120a 導電膜
120b 導電膜
132 金属酸化膜
134 金属酸化膜
136 混合領域
139 ハロゲン元素
140 酸素
141a 開口部
141b 開口部
142a 開口部
142b 開口部
142c 開口部
145 領域
150 トランジスタ
160 トランジスタ
170 トランジスタ
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
2000 タッチパネル
2001 タッチパネル
2501 表示装置
2502t トランジスタ
2503c 容量素子
2503t トランジスタ
2504 走査線駆動回路
2505 画素
2509 FPC
2510 基板
2510a 絶縁層
2510b 可撓性基板
2510c 接着層
2511 配線
2519 端子
2521 絶縁層
2522 絶縁層
2528 隔壁
2529 液晶層
2530a スペーサ
2530b スペーサ
2531 絶縁層
2550 EL素子
2551 液晶素子
2560 封止層
2567 着色層
2568 遮光層
2569 反射防止層
2570 基板
2570a 絶縁層
2570b 可撓性基板
2570c 接着層
2580 発光モジュール
2590 基板
2591 電極
2592 電極
2593 絶縁層
2594 配線
2595 タッチセンサ
2597 接着層
2598 配線
2599 接続層
2601 パルス電圧出力回路
2602 電流検出回路
2603 容量
2611 トランジスタ
2612 トランジスタ
2613 トランジスタ
2621 電極
2622 電極
5100 ペレット
5120 基板
5161 領域
5200 ペレット
5201 イオン
5203 粒子
5206 酸化物薄膜
5220 基板
5230 ターゲット
5240 プラズマ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 携帯情報端末
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Claims (11)
- 酸化物半導体膜を有する半導体装置であって、
前記半導体装置は、
ゲート電極と、
前記ゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の前記酸化物半導体膜と、
前記酸化物半導体膜に電気的に接続されるソース電極と、
前記酸化物半導体膜に電気的に接続されるドレイン電極と、
前記酸化物半導体膜、前記ソース電極、及び前記ドレイン電極上の第2の絶縁膜と、
前記第2の絶縁膜上の第1の金属酸化膜と、
前記第1の金属酸化膜上の第2の金属酸化膜と、を有し、
前記第1の金属酸化膜は、
前記酸化物半導体膜と同一の金属元素を少なくとも一つ有し、
前記第2の金属酸化膜は、
前記第1の金属酸化膜と、混合する領域を有する、
ことを特徴とする半導体装置。 - 酸化物半導体膜を有する半導体装置であって、
前記半導体装置は、
第1のゲート電極と、
前記第1のゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の前記酸化物半導体膜と、
前記酸化物半導体膜に電気的に接続されるソース電極と、
前記酸化物半導体膜に電気的に接続されるドレイン電極と、
前記酸化物半導体膜、前記ソース電極、及び前記ドレイン電極上の第2の絶縁膜と、
前記第2の絶縁膜上の第1の金属酸化膜と、
前記第1の金属酸化膜上の第2の金属酸化膜と、
前記第2の金属酸化膜上の第2のゲート電極と、を有し、
前記第1の金属酸化膜は、
前記酸化物半導体膜と同一の金属元素を少なくとも一つ有し、
前記第2の金属酸化膜は、
前記第1の金属酸化膜と、混合する領域を有する、
ことを特徴とする半導体装置。 - 酸化物半導体膜を有する半導体装置であって、
前記半導体装置は、
ゲート電極と、
前記ゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の前記酸化物半導体膜と、
前記酸化物半導体膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第1の金属酸化膜と、
前記第1の金属酸化膜上の第2の金属酸化膜と、
前記第2の金属酸化膜上に設けられ、前記酸化物半導体膜に電気的に接続されるソース電極と、
前記第2の金属酸化膜上に設けられ、前記酸化物半導体膜に電気的に接続されるドレイン電極と、を有し、
前記第1の金属酸化膜は、
前記酸化物半導体膜と同一の金属元素を少なくとも一つ有し、
前記第2の金属酸化膜は、
前記第1の金属酸化膜と、混合する領域を有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記酸化物半導体膜は、
Inと、Znと、M(Mは、Ti、Ga、Y、Zr、La、Ce、Nd、SnまたはHfを表す)と、を有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記酸化物半導体膜は、
結晶部を有し、
前記結晶部は、c軸配向性を有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第2の絶縁膜は、
昇温脱離ガス分析法によって、8.0×1014個/cm2以上の酸素分子が検出される、
ことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の金属酸化膜は、Inを有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第2の金属酸化膜は、Alを有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項8に記載のいずれか一項の半導体装置と、
表示素子と、を有する、
ことを特徴とする表示装置。 - 請求項9に記載の表示装置と、
タッチセンサと、
を有する、
ことを特徴とする表示モジュール。 - 請求項1乃至請求項8に記載のいずれか一項の半導体装置、請求項9に記載の表示装置、または請求項10に記載の表示モジュールと、
操作キーまたはバッテリと、を有する、
ことを特徴とする電子機器。
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US11862454B2 (en) | 2024-01-02 |
JP2022027871A (ja) | 2022-02-14 |
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JP2023080358A (ja) | 2023-06-08 |
US20240154041A1 (en) | 2024-05-09 |
JP2020017735A (ja) | 2020-01-30 |
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US10529864B2 (en) | 2020-01-07 |
US20170263776A1 (en) | 2017-09-14 |
US20200144424A1 (en) | 2020-05-07 |
US9704704B2 (en) | 2017-07-11 |
US20160118502A1 (en) | 2016-04-28 |
US11158745B2 (en) | 2021-10-26 |
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