JP2013153156A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP2013153156A JP2013153156A JP2012283326A JP2012283326A JP2013153156A JP 2013153156 A JP2013153156 A JP 2013153156A JP 2012283326 A JP2012283326 A JP 2012283326A JP 2012283326 A JP2012283326 A JP 2012283326A JP 2013153156 A JP2013153156 A JP 2013153156A
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Images
Classifications
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Abstract
【解決手段】酸化物半導体層を含むボトムゲート構造のトランジスタを有する半導体装置において、酸化物半導体層に接して、絶縁層及び金属膜を積層させる。金属膜上から絶縁層及び金属膜に酸素ドープ処理を行うことによって、絶縁層に化学量論的組成よりも過剰に酸素を含む領域を形成するともに、金属膜を酸化し、金属酸化物膜を形成する。また、金属酸化物膜の抵抗率を、1×1010Ωm以上1×1019Ωm以下とする。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1及び図2を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体層を有するトランジスタを示す。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図10乃至図12を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体層を有するトランジスタを示す。
実施の形態1又は2に示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部又は全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1又は2に示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、又はテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の具体例を図8及び図9に示す。
400 基板
401 ゲート電極層
401a ゲート電極層
401b ゲート電極層
401c ゲート電極層
402 ゲート絶縁層
402a ゲート絶縁層
402b ゲート絶縁層
403 酸化物半導体層
405a ソース電極層
405b ドレイン電極層
405c 電極層
412 ゲート絶縁層
412a ゲート絶縁層
412b ゲート絶縁層
413 絶縁層
413a 領域
413b 領域
416 絶縁層
416a 領域
417 金属酸化物膜
420 トランジスタ
422 絶縁層
423 絶縁層
424 平坦化絶縁層
425a 開口
425b 開口
426 絶縁層
427 金属膜
433 絶縁層
437 金属酸化物膜
440 トランジスタ
447 金属酸化物膜
454 酸素
457 金属膜
460 トランジスタ
480 トランジスタ
491 電極層
491a 電極層
491b 電極層
491c 電極層
500 基板
502 ゲート絶縁層
504 層間絶縁層
505 カラーフィルタ層
506 絶縁層
507 隔壁
510 トランジスタ
511a ゲート電極層
511b ゲート電極層
512 酸化物半導体層
513a 導電層
513b 導電層
520 容量素子
521a 導電層
521b 導電層
522 酸化物半導体層
523 導電層
524 絶縁層
525 絶縁層
530 配線層交差部
533 導電層
540 発光素子
541 電極層
542 電界発光層
543 電極層
601 基板
602 フォトダイオード
606a 半導体膜
606b 半導体膜
606c 半導体膜
608 接着層
613 基板
631 絶縁層
632 絶縁層
633 層間絶縁層
634 層間絶縁層
640 トランジスタ
641a 電極層
641b 電極層
642 電極層
643 導電層
645 導電層
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電層
4020a ゲート絶縁層
4020b ゲート絶縁層
4021 絶縁層
4030 絶縁層
4031 電極層
4032 絶縁層
4033 絶縁層
4034 電極層
4035 スペーサ
4038 絶縁層
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 コンバータ
9638 操作キー
9639 ボタン
Claims (12)
- ゲート電極層と、
前記ゲート電極層上に設けられたゲート絶縁層と、
前記ゲート絶縁層を介して前記ゲート電極層と重畳する酸化物半導体層と、
前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層と、
前記ソース電極層及び前記ドレイン電極層上に設けられ、前記酸化物半導体層と接する絶縁層と、
前記絶縁層上に接して設けられた金属酸化物膜と、を有し、
前記金属酸化物膜の抵抗率が、1×1010Ωm以上1×1019Ωm以下である半導体装置。 - ゲート電極層と、
前記ゲート電極層上に設けられたゲート絶縁層と、
前記ゲート絶縁層を介して前記ゲート電極層と重畳する酸化物半導体層と、
前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層と、
前記ソース電極層及び前記ドレイン電極層上に設けられ、前記酸化物半導体層と接する絶縁層と、
前記絶縁層上に接して設けられた金属酸化物膜と、を有し、
前記金属酸化物膜の抵抗率は、1×1010Ωm以上1×1019Ωm以下であり、
前記絶縁層は、化学量論的組成よりも過剰に酸素を含む領域を有する半導体装置。 - 請求項1又は2において、
前記金属酸化物膜として、酸化アルミニウム膜を有する半導体装置。 - 絶縁表面上にゲート電極層と、
前記ゲート電極層上にゲート絶縁層と、
前記ゲート絶縁層上に酸化物半導体層と、
前記ゲート電極層と重畳する前記酸化物半導体層上に、前記酸化物半導体層と接する絶縁層と、前記絶縁層上に設けられた酸化アルミニウム膜との島状の積層と、
前記酸化物半導体層、前記絶縁層、及び前記酸化アルミニウム膜上に、前記酸化物半導体層に電気的に接続するソース電極層及びドレイン電極層とを有する半導体装置。 - 絶縁表面上にゲート電極層と、
前記ゲート電極層上にゲート絶縁層と、
前記ゲート絶縁層上に酸化物半導体層と、
前記ゲート電極層と重畳する前記酸化物半導体層上に、前記酸化物半導体層と接する絶縁層と、前記絶縁層上に設けられた酸化アルミニウム膜との積層と、
前記酸化物半導体層に電気的に接続するソース電極層及びドレイン電極層とを有し、
前記ソース電極層及び前記ドレイン電極層は、前記絶縁層及び前記酸化アルミニウム膜が有する前記酸化物半導体層に達する開口に設けられ、
前記酸化物半導体層の周縁部は前記絶縁層及び前記酸化アルミニウム膜によって覆われる半導体装置。 - 請求項4又は請求項5において、前記酸化アルミニウム膜の抵抗率は1×1010Ωm以上1×1019Ωm以下である半導体装置。
- ゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層を介して前記ゲート電極層と重畳する領域に酸化物半導体層を形成し、
前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層を形成し、
前記ソース電極層及び前記ドレイン電極層上に、前記酸化物半導体層と接する絶縁層を形成し、
前記絶縁層と接する金属膜を形成し、
前記金属膜及び前記絶縁層に対して、酸素ドープ処理を行うことによって、前記絶縁層に酸素を添加し、且つ、前記金属膜を、1×1010Ωm以上1×1019Ωm以下の抵抗率を有する金属酸化物膜とする半導体装置の作製方法。 - 請求項7において、
前記金属膜を形成する前に、前記絶縁層に熱処理を行い、前記絶縁層から水又は水素を低減する半導体装置の作製方法。 - 請求項7又は8において、
前記金属膜としてアルミニウム膜を形成し、前記酸素ドープ処理によって前記アルミニウム膜を酸化アルミニウム膜とする半導体装置の作製方法。 - ゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層を介して前記ゲート電極層と重畳する領域に酸化物半導体層を形成し、
前記ゲート電極層と重畳する前記酸化物半導体層上に接する絶縁層を形成し、
前記絶縁層と接するアルミニウム膜を形成し、
前記アルミニウム膜及び前記絶縁層に対して、酸素ドープ処理を行うことによって、前記絶縁層に酸素を添加し、且つ、前記アルミニウム膜を酸化アルミニウム膜とし、
前記酸素ドープ処理を行った絶縁層及び前記酸化アルミニウム膜に前記酸化物半導体層に達する開口を形成し、
前記開口に前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層を形成する半導体装置の作製方法。 - ゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層を介して前記ゲート電極層と重畳する領域に酸化物半導体層を形成し、
前記ゲート電極層と重畳する前記酸化物半導体層上に接する絶縁層を形成し、
前記絶縁層に熱処理を行って、前記絶縁層中の水又は水素を除去し、
前記水又は水素が除去された絶縁層と接するアルミニウム膜を形成し、
前記アルミニウム膜及び前記絶縁層に対して、酸素ドープ処理を行うことによって、前記絶縁層に酸素を添加し、且つ、前記アルミニウム膜を酸化アルミニウム膜とし、
前記酸素ドープ処理を行った絶縁層及び前記酸化アルミニウム膜に前記酸化物半導体層に達する開口を形成し、
前記開口に前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層を形成する半導体装置の作製方法。 - 請求項10又は請求項11において、前記酸素ドープ処理後、熱処理を行い前記酸化物半導体層へ前記絶縁層から酸素を供給する半導体装置の作製方法。
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Also Published As
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JP6231743B2 (ja) | 2017-11-15 |
US20130161610A1 (en) | 2013-06-27 |
US20170040440A1 (en) | 2017-02-09 |
TW201733128A (zh) | 2017-09-16 |
KR102162326B1 (ko) | 2020-10-06 |
TW201336078A (zh) | 2013-09-01 |
KR20130075657A (ko) | 2013-07-05 |
TWI617036B (zh) | 2018-03-01 |
KR20200039639A (ko) | 2020-04-16 |
TWI596770B (zh) | 2017-08-21 |
US9502572B2 (en) | 2016-11-22 |
KR102100425B1 (ko) | 2020-04-13 |
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